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    • 1. 发明授权
    • BiCMOS process with low temperature coefficient resistor (TCRL)
    • BiCMOS工艺与低温系数电阻(TCRL)
    • US06798024B1
    • 2004-09-28
    • US09607080
    • 2000-06-29
    • Donald HemmenwayJose DelgadoJohn ButlerAnthony RivoliMichael D. ChurchGeorge V. RouseLawrence G. PearceGeorge S. Bajor
    • Donald HemmenwayJose DelgadoJohn ButlerAnthony RivoliMichael D. ChurchGeorge V. RouseLawrence G. PearceGeorge S. Bajor
    • H01L2976
    • H01L28/20H01L21/763H01L21/8249H01L27/0635
    • A low temperature coefficient resistor (TCRL) has some unrepaired ion implant damage. The damaged portion raises the resistance and renders the resistor less sensitive to operating temperature fluctuations A polysilicon thin film low temperature coefficient resistor and a method for the resistor's fabrication overcomes the coefficient of resistance problem of the prior art, while at the same time eliminating steps from the BiCMOS fabrication process, optimizing bipolar design tradeoffs, and improving passive device isolation. A low temperature coefficient of resistance resistor (TCRL) is formed on a layer of insulation, typically silicon dioxide or silicon nitride, the layer comprising polysilicon having a relatively high concentration of dopants of one or more species. An annealing process is used for the implanted resistor which is shorter than that for typical prior art implanted resistors, leaving some intentional unannealed damage in the resistor. The planned damage gives the TCRL a higher resistance without increasing its temperature coefficient. A process for fabrication of the resistor is used which combines separate spacer oxide depositions, provides buried layers having different diffusion coefficients, incorporates dual dielectric trench sidewalls that double as a polish stop, supplies a spacer structure that controls precisely the emitter-base dimension, and integrates bipolar and CMOS devices with negligible compromise to the features of either type.
    • 低温度系数电阻(TCRL)具有一些未修复的离子注入损伤。 损坏部分提高电阻并使电阻器对工作温度波动较不敏感多晶硅薄膜低温度系数电阻器和电阻器制造方法克服了现有技术的电阻问题系数,同时消除了步骤 BiCMOS制造工艺,优化双极设计权衡,改善无源器件隔离。 在绝缘层(通常为二氧化硅或氮化硅)上形成电阻电阻器(TCRL)的低温度系数,该层包含具有相对高浓度的一种或多种物质的掺杂剂的多晶硅。 对于注入电阻器而言,使用退火工艺,其比典型的现有技术的注入电阻器的退火工艺短,从而在电阻器中留下一些有意的未退火损坏。 计划的损坏使TCRL具有更高的阻力,而不增加其温度系数。 使用制造电阻器的方法,其组合分开的间隔氧化物沉积,提供具有不同扩散系数的掩埋层,并入双重介质沟槽侧壁作为抛光停止点,提供精确控制发射极基底尺寸的间隔结构,以及 将双极和CMOS器件集成到任何一种类型的特性上都可忽略不计。
    • 2. 发明授权
    • BICMOS process with low temperature coefficient resistor (TCRL)
    • BICMOS工艺采用低温系数电阻(TCRL)
    • US06812108B2
    • 2004-11-02
    • US10393181
    • 2003-03-19
    • Donald HemmenwayJose DelgadoJohn ButlerAnthony RivoliMichael D. ChurchGeorge V. RouseLawrence G. PearceGeorge Bajor
    • Donald HemmenwayJose DelgadoJohn ButlerAnthony RivoliMichael D. ChurchGeorge V. RouseLawrence G. PearceGeorge Bajor
    • H01L2120
    • H01L28/20H01L21/763H01L21/8249H01L27/0635
    • A low temperature coefficient resistor(TCRL) has some unrepaired ion implant damage. The damaged portion raises the resistance and renders the resistor less sensitive to operating temperature fluctuations. A polysilicon thin film low temperature coefficient resistor and a method for the resistor's fabrication overcomes the coefficient of resistance problem of the prior art, while at the same time eliminating steps from the BiCMOS fabrication process, optimizing bipolar design tradeoffs, and improving passive device isolation. A low temperature coefficient of resistance resistor (TCRL) is formed on a layer of insulation, typically silicon dioxide or silicon nitride, the layer comprising polysilicon having a relatively high concentration of dopants of one or more species. An annealing process is used for the implanted resistor which is shorter than that for typical prior art implanted resistors, leaving some intentional unannealed damage in the resistor. The planned damage gives the TCRL a higher resistance without increasing its temperature coefficient. A process for fabrication of the resistor is used which combines separate spacer oxide depositions, provides buried layers having different diffusion coefficients, incorporates dual dielectric trench sidewalls that double as a polish stop, supplies a spacer structure that controls precisely the emitter-base dimension, and integrates bipolar and CMOS devices with negligible compromise to the features of either type.
    • 低温度系数电阻(TCRL)具有一些未修复的离子注入损伤。 损坏部分会提高电阻,使电阻对工作温度波动较不敏感。 多晶硅薄膜低温系数电阻器和电阻器制造方法克服了现有技术的电阻系数问题,同时消除了BiCMOS制造工艺的步骤,优化了双极设计的权衡,改善了无源器件隔离。 在绝缘层(通常为二氧化硅或氮化硅)上形成电阻电阻器(TCRL)的低温度系数,该层包含具有相对高浓度的一种或多种物质的掺杂剂的多晶硅。 对于注入电阻器而言,使用退火工艺,其比典型的现有技术的注入电阻器的退火工艺短,从而在电阻器中留下一些有意的未退火损坏。 计划的损坏使TCRL具有更高的阻力,而不增加其温度系数。 使用制造电阻器的方法,其组合分开的间隔氧化物沉积,提供具有不同扩散系数的掩埋层,并入双重介质沟槽侧壁作为抛光停止点,提供精确控制发射极基底尺寸的间隔结构,以及 将双极和CMOS器件集成到任何一种类型的特性上都可忽略不计。
    • 7. 发明申请
    • Instrument Access Device
    • 仪器接入设备
    • US20100204548A1
    • 2010-08-12
    • US12694888
    • 2010-01-27
    • Frank BonadioTrevor VaughRonan B. McManusShane J. MacNallyJohn Butler
    • Frank BonadioTrevor VaughRonan B. McManusShane J. MacNallyJohn Butler
    • A61M13/00A61B1/32
    • A61B17/3423A61B17/0218A61B17/0293A61B17/3431A61B17/3462A61B17/3468A61B17/3498A61B2017/00477A61B2017/3445A61B2017/3449A61B2017/3466A61B2017/3484A61B2017/3492
    • An instrument access device comprises first, second and third instrument seals for sealing around instruments extended through the device. The seals have respective connector sleeves. Each sleeve connects a base to one of the instrument seals. The device also comprises two insufflation/desufflation ports. Each of the ports comprises a connector extending from the base, a tube extending from the connector, a luer connector and a removable cap. The luer connector is used for connection to any suitable supply line for insufflation gas or for discharge if insufflation gas. In use, the insufflation/desufflation ports facilitate independent control of insufflation and desufflation as may be required during a surgical procedure. Access sleeve at the proximal end is cut-off, folded over the inner proximal ring and is held in place between the base and the inner proximal ring when the base is fitted. The proximal end of the sleeve that is generated when the sleeve is pulled upwardly to retract an incision is removed from the field of use.
    • 仪器进入装置包括第一,第二和第三仪器密封件,用于密封通过该装置延伸的仪器。 密封件具有相应的连接器套筒。 每个套管将底座连接到仪器密封件之一。 该装置还包括两个吹入/​​去气孔。 每个端口包括从基座延伸的连接器,从连接器延伸的管,鲁尔连接器和可移除盖。 鲁尔连接器用于连接任何合适的吹入气体供应管线,或用于吹入气体时排出。 在使用中,吹入/抽吸端口有助于在外科手术过程中可能需要的吹气和脱气的独立控制。 在近端的接近套筒被切断,折叠在内侧近端环上,并且当基座安装时,将其保持在基部和内侧近端环之间的适当位置。 当套筒向上拉以缩回切口时产生的套筒的近端从使用领域移除。
    • 8. 发明申请
    • INSTRUMENT INSERTION DEVICE
    • 仪器插入装置
    • US20100063364A1
    • 2010-03-11
    • US12525256
    • 2008-02-01
    • Frank BonadioJohn ButlerTrevor Vaugh
    • Frank BonadioJohn ButlerTrevor Vaugh
    • A61B1/32
    • A61B17/3498A61B17/0293A61B17/3423A61B17/3462A61B2017/00477A61B2017/3464
    • An instrument insertion device (1) comprises a first seal (2), a second seal (3), a first proximal ring (4) for location externally of a wound opening, and a second proximal ring (5) for location externally of the wound opening. The first seal (2) may be a tricuspid valve defining a passageway (6) extending therethrough. An instrument (7) may be inserted through the passageway (6). The passageway (6) is movable from the closed configuration to the open configuration upon insertion of the instrument (7) through the passageway (6). The passageway (6) is biased towards the closed configuration, such that upon removal of the instrument (7) from the passageway (6), the passageway (6) moves automatically from the open configuration to the closed configuration. The second seal (3) may be a lipseal valve with a passageway (8) extending therethrough. An instrument (7) may be inserted through the passageway (8). The passageway (8) is biased towards the open configuration, such that upon removal of the instrument (7) from the passageway (8), the passageway (8) moves automatically from the sealed configuration to the open configuration.
    • 仪器插入装置(1)包括第一密封件(2),第二密封件(3),用于位于卷绕开口外部的第一近端环(4)和用于位于外部的位置的第二近端环(5) 伤口开口。 第一密封件(2)可以是限定通过其延伸的通道(6)的三尖瓣。 仪器(7)可以插入通过通道(6)。 当通过通道(6)插入仪器(7)时,通道(6)可从闭合构型移动到打开构型。 通道(6)被朝向闭合构型偏置,使得当从通道(6)移除仪器(7)时,通道(6)自动地从打开构型移动到闭合构型。 第二密封件(3)可以是具有延伸穿过其中的通道(8)的密封阀。 仪器(7)可以插入通过通道(8)。 通道(8)被朝向打开构型偏置,使得当从通道(8)移除仪器(7)时,通道(8)自动从密封构型移动到打开构型。