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2. 发明授权

US06798024B1 BiCMOS process with low temperature coefficient resistor (TCRL) 失效
标题翻译： BiCMOS工艺与低温系数电阻（TCRL）
公开(公告)号：US06798024B1
公开(公告)日：2004-09-28
申请号：US09607080
申请日：2000-06-29
申请人： Donald Hemmenway , Jose Delgado , John Butler , Anthony Rivoli , Michael D. Church , George V. Rouse , Lawrence G. Pearce , George S. Bajor
发明人： Donald Hemmenway , Jose Delgado , John Butler , Anthony Rivoli , Michael D. Church , George V. Rouse , Lawrence G. Pearce , George S. Bajor
IPC分类号： H01L2976
CPC分类号： H01L28/20 , H01L21/763 , H01L21/8249 , H01L27/0635
摘要： A low temperature coefficient resistor (TCRL) has some unrepaired ion implant damage. The damaged portion raises the resistance and renders the resistor less sensitive to operating temperature fluctuations A polysilicon thin film low temperature coefficient resistor and a method for the resistor's fabrication overcomes the coefficient of resistance problem of the prior art, while at the same time eliminating steps from the BiCMOS fabrication process, optimizing bipolar design tradeoffs, and improving passive device isolation. A low temperature coefficient of resistance resistor (TCRL) is formed on a layer of insulation, typically silicon dioxide or silicon nitride, the layer comprising polysilicon having a relatively high concentration of dopants of one or more species. An annealing process is used for the implanted resistor which is shorter than that for typical prior art implanted resistors, leaving some intentional unannealed damage in the resistor. The planned damage gives the TCRL a higher resistance without increasing its temperature coefficient. A process for fabrication of the resistor is used which combines separate spacer oxide depositions, provides buried layers having different diffusion coefficients, incorporates dual dielectric trench sidewalls that double as a polish stop, supplies a spacer structure that controls precisely the emitter-base dimension, and integrates bipolar and CMOS devices with negligible compromise to the features of either type.
摘要翻译：低温度系数电阻（TCRL）具有一些未修复的离子注入损伤。损坏部分提高电阻并使电阻器对工作温度波动较不敏感多晶硅薄膜低温度系数电阻器和电阻器制造方法克服了现有技术的电阻问题系数，同时消除了步骤 BiCMOS制造工艺，优化双极设计权衡，改善无源器件隔离。在绝缘层（通常为二氧化硅或氮化硅）上形成电阻电阻器（TCRL）的低温度系数，该层包含具有相对高浓度的一种或多种物质的掺杂剂的多晶硅。对于注入电阻器而言，使用退火工艺，其比典型的现有技术的注入电阻器的退火工艺短，从而在电阻器中留下一些有意的未退火损坏。计划的损坏使TCRL具有更高的阻力，而不增加其温度系数。使用制造电阻器的方法，其组合分开的间隔氧化物沉积，提供具有不同扩散系数的掩埋层，并入双重介质沟槽侧壁作为抛光停止点，提供精确控制发射极基底尺寸的间隔结构，以及将双极和CMOS器件集成到任何一种类型的特性上都可忽略不计。

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