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1. 发明专利

JP2006150844A Cutting or grinding processing of highly brittle material 审中-公开
标题翻译：高品质切割或研磨加工
公开(公告)号：JP2006150844A
公开(公告)日：2006-06-15
申请号：JP2004347209
申请日：2004-11-30
申请人： Disco Abrasive Syst Ltd , Yushiro Chem Ind Co Ltd , ユシロ化学工業株式会社 , 株式会社ディスコ
发明人： ISHIKAWA TAKATOSHI , YOKOYAMA KENZO , SANDO HIDEYUKI , YOSHIDA MIKI , RYUU ROISEN , HARADA SEISHI
IPC分类号： B28D5/00 , B28D7/02 , C03B33/00 , C08J5/14 , C08L101/08 , H01L21/301
CPC分类号： Y02P40/57
摘要： PROBLEM TO BE SOLVED: To provide a cutting or grinding processing of a highly brittle material which can suppress the foaming during the processing and restrain the chips generated upon processing the highly brittle material from adhering to the material being worked. SOLUTION: The cutting or grinding processing of highly brittle materials uses an agent for processing highly brittle materials, which comprises 1-10,000 ppm of 1 or more kinds of an ammonium salt, alkali metal salt and amine salt of a high molecular weight polycarboxylic acid having a weight average molecular weight of 500-50,000 that is a polyacrylic acid or a copolymer between an α-olefin and maleic acid, and which has a pH of 6-9. This cutting or grinding processing of highly brittle materials can suitably be employed for the cutting or grinding processings, especially for the cutting, precision polishing or dicing processings, of highly brittle materials including glass, ceramic or silicon in particular. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供可以抑制加工过程中的发泡的高脆性材料的切割或研磨加工，并且在加工高脆性材料时产生的切屑粘附在被加工材料上。解决方案：高脆性材料的切割或研磨加工使用加工高脆性材料的试剂，其含有1-10ppm的高分子量的铵盐，碱金属盐和胺盐1-10ppm 重均分子量为500〜5000的聚羧酸，其为聚丙烯酸或α-烯烃与马来酸之间的共聚物，其pH为6-9。高脆性材料的切割或研磨加工适合用于切割或研磨加工，特别是切割，精密抛光或切割处理，特别是包括玻璃，陶瓷或硅的高度脆性材料。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2007152858A Method of cutting or grinding brittle material and chip-sticking preventive agent 审中-公开
标题翻译：切割或研磨脆性材料和芯片预防剂的方法
公开(公告)号：JP2007152858A
公开(公告)日：2007-06-21
申请号：JP2005354069
申请日：2005-12-07
申请人： Disco Abrasive Syst Ltd , Yushiro Chem Ind Co Ltd , ユシロ化学工業株式会社 , 株式会社ディスコ
发明人： ISHIKAWA TAKATOSHI , TAKAO MASANORI , TAKEMURA TOMOYOSHI , SANDO HIDEYUKI , YOSHIDA MIKI , RYUU ROISEN , HARADA SEISHI
IPC分类号： B28D7/02 , B24B55/00 , C09K3/14
摘要： PROBLEM TO BE SOLVED: To provide a method of cutting or grinding brittle materials and a chip-sticking preventive agent by which the sticking of chips or a ground powder generated in machining a brittle material to a workpiece is controlled, the cleaning after machining is made easier and the lowering of a yield due to poor cleaning is avoided.
SOLUTION: The method of cutting or grinding brittle materials is characterized in that cutting or grinding brittle materials is conducted by using a brittle material-machining auxiliary agent which is obtained by mixing water and a large molecular weight water-soluble cationic polymer with an average weight-average molecular weight of 70-70,000 (e.g. a polyethylene imine, a dicyandiamide, a quaternary ammonium salt and the like), contains the large molecular weight water-soluble cationic polymer in an amount of 5-10,000 ppm and has a pH of 6-9. The method of cutting or grinding brittle materials is favorably applied for cutting or grinding brittle, particularly cutting, precision-polishing and dicing materials including glass, ceramics or silicon.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种切削或研磨脆性材料的方法以及防止在对加工脆性材料时产生的切屑或研磨粉末粘附到工件上的防止碎屑的处理，使加工变得更容易，并且避免了由于清洁不良导致的产量的降低。解决方案：切削或研磨脆性材料的方法的特征在于，通过使用脆性材料加工辅助剂来进行切削或研磨脆性材料，所述脆性材料加工助剂通过将水和大分子量水溶性阳离子聚合物与平均重均分子量为70-70,000（例如聚乙烯亚胺，双氰胺，季铵盐等）含有5-10,000ppm的大分子量水溶性阳离子聚合物，并具有 pH为6-9。切削或研磨脆性材料的方法有利地用于切削或研磨脆性，特别是切割，精密抛光和切割材料，包括玻璃，陶瓷或硅。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2010110842A Suction plate and method for manufacturing the same 有权
标题翻译：吸盘及其制造方法
公开(公告)号：JP2010110842A
公开(公告)日：2010-05-20
申请号：JP2008284057
申请日：2008-11-05
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： KAJIYAMA KEIICHI , GOKITA YOHEI , HARADA SEISHI
IPC分类号： B23Q3/08 , B24B41/06 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a suction plate for a chuck table suitable for parallelization between a grinding surface of a grinding wheel and a holding surface of a chuck table, and also to provide a method for manufacturing the plate. SOLUTION: The suction plate is the one for a holding table to suck and hold a workpiece and is formed by integrally sintering silicon particles with a particle diameter of 200-800 μm. A porous suction plate is formed by mixing 50-80% in a volume ratio of the silicon particles with a particle diameter of 200-800 μm and 50-20% in a volume ratio of silicon particles with a particle diameter of ≤150 μm and sintering the mixture in a vacuum atmosphere, an inert gas atmosphere, or a reduction atmosphere under a pressure of 0.1-20 MPa at 1,200-1,350°C. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种适用于砂轮的磨削表面和卡盘台的保持表面之间并联的夹盘的吸盘，并且还提供了一种制造该板的方法。
解决方案：吸盘是用于吸持和保持工件的保持台，并且通过一体烧结粒径为200-800μm的硅颗粒而形成。通过以50〜80％的硅粒子的粒径为200〜800μm的体积比和50〜20％的硅粒子的粒径为≤150μm的体积比混合形成多孔吸附板，在真空气氛，惰性气体气氛或还原气氛中，在0.1-20MPa的压力下在1,200-1,350℃下烧结该混合物。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2004071833A Method for polishing both sides of semiconductor wafer 审中-公开
公开(公告)号：JP2004071833A
公开(公告)日：2004-03-04
申请号：JP2002229081
申请日：2002-08-06
申请人： Disco Abrasive Syst Ltd , Sumitomo Mitsubishi Silicon Corp , 三菱住友シリコン株式会社 , 株式会社ディスコ
发明人： HARADA SEISHI , NAGAI KIYOSATO , ONO ISOROKU , KIMOTO TSUTOMU , MIYAZAKI KAZUYA
IPC分类号： B24B7/17 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method for polishing both sides of a semiconductor wafer by which a wafer with high flatness can be obtained, the reduction of running cost be realized, and both front and rear sides thereof be quickly polished.
SOLUTION: A polishing cloth 15 for front side and a polishing cloth 14 for backside wherein polishing particles are fixed on the respective polishing work surfaces are used to polish both sides in high flatness. Furthermore, running cost can be reduced, and both sides be also quickly polished. In addition, a KOH solution of pH 10.5-13 containing no polishing particles is used as a polishing liquid. Therefore, the polishing liquid can be easily handled, and a polishing waste liquid is easy to be reused.
COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2009298650A Silicon recycle system 审中-公开
标题翻译：硅回收系统
公开(公告)号：JP2009298650A
公开(公告)日：2009-12-24
申请号：JP2008154988
申请日：2008-06-13
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： ARAI KAZUNAO , HARADA SEISHI
IPC分类号： C01B33/02 , B09B3/00
摘要： PROBLEM TO BE SOLVED: To provide a silicon recycle system which can reutilize expensive silicon from waste liquid or scrap material in a semiconductor fabricating process.
SOLUTION: Disclosed is a silicon recycle system where the waste liquid or the scrap material produced by a working apparatus for grinding or cutting a silicon ingot or a silicon wafer is recovered, and silicon is recycled, and which include: a waste liquid-scrap material collection means collecting the waste liquid or the scrap material discharged from the working apparatus; a recovery means recovering the waste liquid or the scrap material collected by the waste liquid-scrap material collection means to a refining place; a refining means for refining the recovered waste liquid or the scrap material into refined silicon; and a silicon ingot production means producing a silicon ingot from the refined silicon refined by the refining means.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在半导体制造工艺中可以从废液或废料再利用昂贵的硅的硅再循环系统。解决方案：公开了一种硅再循环系统，其中回收用于研磨或切割硅锭或硅晶片的工作装置产生的废液或废料，并且回收硅，并且其包括：废液 - 收集装置收集从工作装置排出的废液或废料; 回收装置，将由废液废料收集装置收集的废液或废料回收到精炼处; 用于将回收废液或废料精炼成精制硅的精炼装置; 以及硅锭生产装置，由精炼装置精炼的精制硅生产硅锭。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009280467A Manufacturing method of silicon sintered body 审中-公开
标题翻译：硅烧结体的制造方法
公开(公告)号：JP2009280467A
公开(公告)日：2009-12-03
申请号：JP2008136650
申请日：2008-05-26
申请人： Disco Abrasive Syst Ltd , Kinzoku Giken Kk , 株式会社ディスコ , 金属技研株式会社
发明人： NAKAO HIROMI , SUZUKI YASUAKI , YONEMOTO TOMOHIRO , HARADA SEISHI
IPC分类号： C01B33/02
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon sinterred body capable of using as a cheap raw material by a simple means.
SOLUTION: This solid silicon sintered body is manufactured by drying a waste silicon powder in a clean environment, then the dried silicon powder is hot pressed in vacuo, at a temperature in the range of 1,150-1,300°C with a surface pressure of not less than 0.5 MPa, or this silicon sintered body is manufactured by heat treating a waste silicon powder in a hydrogen atmosphere, then the heat treated silicon powder is hot pressed at a temperature in the range of 1,150-1,300°C with a surface pressure of not less than 0.5 MPa.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供能够通过简单的手段将廉价原料用作硅烧结体的制造方法。解决方案：该固体硅烧结体通过在干净的环境中干燥废硅粉末而制造，然后将干燥的硅粉末在真空中在1150-1300℃的温度下热压，表面压力或者该硅烧结体是通过在氢气氛中热处理废硅粉而制成的，然后将热处理硅粉在1,150-1,300℃的温度下用表面压力不小于0.5MPa。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009094326A Method of grinding wafer 审中-公开
标题翻译：研磨方法
公开(公告)号：JP2009094326A
公开(公告)日：2009-04-30
申请号：JP2007264172
申请日：2007-10-10
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： KAJIYAMA KEIICHI , MASUDA TAKATOSHI , WATANABE SHINYA , AOKI SHIGEHIKO , HOSHIKAWA HIROTOSHI , KOBAYASHI YOSHIKAZU , HARADA SEISHI , YAMAMOTO SETSUO
IPC分类号： H01L21/304 , B24B7/22
CPC分类号： B24D7/18 , B24B1/00 , B24B7/228
摘要： PROBLEM TO BE SOLVED: To produce the gettering effect without reducing the bending strength of devices even if the backside of a wafer is ground.
SOLUTION: In a method of grinding a wafer where the backside of a wafer having a plurality of devices formed on the front surface thereof is ground and free movement of heavy metal is suppressed and the bending strength of the devices is maintained at ≥1,000 MPa by the gettering effect, a grinding wheel to be used in the method has such a configuration that a grinding stone is firmly fixed to the free end of a base, the grinding stone being such that diamond abrasive grains having a grain diameter of ≤1 μm are fastened together using vitrified bond. A protection member is pasted to the front surface of the wafer, and the protection member is held on a chuck table. The grinding wheel is turned by turning the chuck table to grind the backside of the wafer by the grinding stone until an average value of the surface roughness of the backside of the wafer becomes ≤0.003 μm and a distortion layer remaining on the backside of the wafer has a thickness of 0.05 μm.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：即使晶片的背面被研磨，也可以在不降低器件的弯曲强度的情况下产生吸气效果。解决方案：在研磨晶片的方法中，其中具有形成在其前表面上的多个器件的晶片的背面被研磨并且重金属的自由移动被抑制，并且器件的弯曲强度保持在≥ 通过吸气效果为1000MPa，在该方法中使用的砂轮具有如下结构：磨石牢固地固定在基座的自由端，研磨石使得具有晶粒直径≤ 1微米用玻璃化粘结固定在一起。保护构件被粘贴到晶片的前表面，并且保护构件保持在卡盘台上。通过转动卡盘台来研磨砂轮，通过研磨石研磨晶片的背面直到晶片背面的表面粗糙度的平均值变为≤0.003μm，并且残留在晶片背面的失真层厚度为0.05μm。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2006297847A Method for manufacturing semiconductor wafer, work slicing method and wire saw used in these methods 有权
标题翻译：用于制造半导体波形的方法，这些方法中使用的布线方法和线
公开(公告)号：JP2006297847A
公开(公告)日：2006-11-02
申请号：JP2005125989
申请日：2005-04-25
申请人： Disco Abrasive Syst Ltd , Nippei Toyama Corp , 株式会社ディスコ , 株式会社日平トヤマ
发明人： MIYATA TAKEAKI , HARADA SEISHI , NAGASAWA KEIICHI
IPC分类号： B28D5/04 , B24B7/20 , B24B27/06 , B24B37/04 , B24D3/28 , B24D11/00 , H01L21/304
CPC分类号： B28D5/045 , B23D57/0053
摘要： PROBLEM TO BE SOLVED: To slice a work in such a way that a long-term undulant pattern is not formed on the surface of a wafer, in a slicing process by a wire saw and to completely eliminate a short-term undulant pattern remaining on the surface of the sliced wafer in a polishing process, and thus to realize the omission of a lapping process or a double head grinding process. SOLUTION: This method for manufacturing a semiconductor wafer comprises the following processes: a slicing process to slice a work while running a wire back and forth in a fixed cycle lasting not less than 3 cycles and less than 8 cycles per minute, on condition that one round-trip run of the wire be one cycle, under such an arrangement that the wire is wound a plurality of times across a plurality of working rollers to form a wire array, a grinding process to grind both surfaces of the sliced wafer using a grinding hone, one surface being ground each time, and a polishing process to polish both surfaces of the ground wafer chemically and mechanically with the help of a fixed abrasive grain polishing cloth and a non-abrasive grain polishing material. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了切割工件，使得在晶片的表面上不形成长期的起伏图案，在线锯的切片处理中并且完全消除短期的起伏在抛光过程中残留在切片晶片的表面上的图案，从而实现省略研磨工艺或双头磨削工艺。解决方案：用于制造半导体晶片的方法包括以下处理：切割工作，以在不少于3个循环且小于8个循环/分钟的固定循环中来回运行丝条，在条件是，线的一次往返行程是一个周期，在这样的布置中，线被多次缠绕在多个加工辊上以形成线阵列，研磨过程以研磨切片晶片的两个表面使用磨削磨削，每次磨削一个表面，以及抛光工艺，借助于固定的磨粒抛光布和非磨料颗粒抛光材料，化学和机械抛光研磨晶片的两个表面。版权所有（C）2007，JPO＆INPIT

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