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1. 发明专利

JP2006150844A Cutting or grinding processing of highly brittle material 审中-公开
标题翻译：高品质切割或研磨加工
公开(公告)号：JP2006150844A
公开(公告)日：2006-06-15
申请号：JP2004347209
申请日：2004-11-30
申请人： Disco Abrasive Syst Ltd , Yushiro Chem Ind Co Ltd , ユシロ化学工業株式会社 , 株式会社ディスコ
发明人： ISHIKAWA TAKATOSHI , YOKOYAMA KENZO , SANDO HIDEYUKI , YOSHIDA MIKI , RYUU ROISEN , HARADA SEISHI
IPC分类号： B28D5/00 , B28D7/02 , C03B33/00 , C08J5/14 , C08L101/08 , H01L21/301
CPC分类号： Y02P40/57
摘要： PROBLEM TO BE SOLVED: To provide a cutting or grinding processing of a highly brittle material which can suppress the foaming during the processing and restrain the chips generated upon processing the highly brittle material from adhering to the material being worked. SOLUTION: The cutting or grinding processing of highly brittle materials uses an agent for processing highly brittle materials, which comprises 1-10,000 ppm of 1 or more kinds of an ammonium salt, alkali metal salt and amine salt of a high molecular weight polycarboxylic acid having a weight average molecular weight of 500-50,000 that is a polyacrylic acid or a copolymer between an α-olefin and maleic acid, and which has a pH of 6-9. This cutting or grinding processing of highly brittle materials can suitably be employed for the cutting or grinding processings, especially for the cutting, precision polishing or dicing processings, of highly brittle materials including glass, ceramic or silicon in particular. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供可以抑制加工过程中的发泡的高脆性材料的切割或研磨加工，并且在加工高脆性材料时产生的切屑粘附在被加工材料上。解决方案：高脆性材料的切割或研磨加工使用加工高脆性材料的试剂，其含有1-10ppm的高分子量的铵盐，碱金属盐和胺盐1-10ppm 重均分子量为500〜5000的聚羧酸，其为聚丙烯酸或α-烯烃与马来酸之间的共聚物，其pH为6-9。高脆性材料的切割或研磨加工适合用于切割或研磨加工，特别是切割，精密抛光或切割处理，特别是包括玻璃，陶瓷或硅的高度脆性材料。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2007152858A Method of cutting or grinding brittle material and chip-sticking preventive agent 审中-公开
标题翻译：切割或研磨脆性材料和芯片预防剂的方法
公开(公告)号：JP2007152858A
公开(公告)日：2007-06-21
申请号：JP2005354069
申请日：2005-12-07
申请人： Disco Abrasive Syst Ltd , Yushiro Chem Ind Co Ltd , ユシロ化学工業株式会社 , 株式会社ディスコ
发明人： ISHIKAWA TAKATOSHI , TAKAO MASANORI , TAKEMURA TOMOYOSHI , SANDO HIDEYUKI , YOSHIDA MIKI , RYUU ROISEN , HARADA SEISHI
IPC分类号： B28D7/02 , B24B55/00 , C09K3/14
摘要： PROBLEM TO BE SOLVED: To provide a method of cutting or grinding brittle materials and a chip-sticking preventive agent by which the sticking of chips or a ground powder generated in machining a brittle material to a workpiece is controlled, the cleaning after machining is made easier and the lowering of a yield due to poor cleaning is avoided.
SOLUTION: The method of cutting or grinding brittle materials is characterized in that cutting or grinding brittle materials is conducted by using a brittle material-machining auxiliary agent which is obtained by mixing water and a large molecular weight water-soluble cationic polymer with an average weight-average molecular weight of 70-70,000 (e.g. a polyethylene imine, a dicyandiamide, a quaternary ammonium salt and the like), contains the large molecular weight water-soluble cationic polymer in an amount of 5-10,000 ppm and has a pH of 6-9. The method of cutting or grinding brittle materials is favorably applied for cutting or grinding brittle, particularly cutting, precision-polishing and dicing materials including glass, ceramics or silicon.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种切削或研磨脆性材料的方法以及防止在对加工脆性材料时产生的切屑或研磨粉末粘附到工件上的防止碎屑的处理，使加工变得更容易，并且避免了由于清洁不良导致的产量的降低。解决方案：切削或研磨脆性材料的方法的特征在于，通过使用脆性材料加工辅助剂来进行切削或研磨脆性材料，所述脆性材料加工助剂通过将水和大分子量水溶性阳离子聚合物与平均重均分子量为70-70,000（例如聚乙烯亚胺，双氰胺，季铵盐等）含有5-10,000ppm的大分子量水溶性阳离子聚合物，并具有 pH为6-9。切削或研磨脆性材料的方法有利地用于切削或研磨脆性，特别是切割，精密抛光和切割材料，包括玻璃，陶瓷或硅。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2003007653A System and method of dividing semiconductor wafer 审中-公开
标题翻译：分布式半导体滤波器的系统与方法
公开(公告)号：JP2003007653A
公开(公告)日：2003-01-10
申请号：JP2001192991
申请日：2001-06-26
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： SANDO HIDEYUKI , DAII AKIJI , KOBAYASHI YOSHIKAZU
IPC分类号： B24B27/06 , H01L21/301
摘要： PROBLEM TO BE SOLVED: To form a semiconductor chip always, having a uniform thickness in the so-called 'pre-dicing' which forms cutting grooves not reaching the backside into the surface of a semiconductor wafer and grinds the backside to expose the cutting grooves on the surface, thereby dividing it into individual semiconductor chips. SOLUTION: The semiconductor wafer dividing system comprises at least a half cutter for forming cutting grooves which do not reach the backside into the surface of a semiconductor wafer; a grinder for grinding the backside of the wafer having the cutting grooves to expose the cutting grooves on the surface, thereby dividing it into individual semiconductor chips; a grinding controller for controlling the grinding feed rate of the grinder; and a tape changer for pasting a support tape to the backside of the semiconductor chip and peeling off a protective tape, pasted on the surface and a thickness measuring unit for measuring the thickness of the semiconductor chip. The grinder controller controls the grinding feed rate of the grinder, based on the measured value or the semiconductor chip thickness by the thickness-measuring unit, so that a semiconductor chip will always have a constant thickness can always be produced, without being influenced by wear of the grindstone, even when there is any.
摘要翻译：要解决的问题：为了形成半导体芯片，在所谓的“预切割”中具有均匀厚度的半导体芯片，其形成未到达半导体晶片的表面的后侧的切割槽，并研磨背面以露出切割槽从而将其分成单独的半导体芯片。解决方案：半导体晶片分割系统包括至少一个半切割器，用于形成不会到达半导体晶片表面的背面的切割凹槽; 用于研磨具有切割槽的晶片的背面的研磨机，以暴露表面上的切割槽，从而将其分成单独的半导体芯片; 用于控制研磨机的研磨进给速度的磨削控制器; 以及用于将支撑带粘贴到半导体芯片的背面并剥离粘贴在表面上的保护带的带式更换器和用于测量半导体芯片的厚度的厚度测量单元。研磨机控制器根据厚度测量单元的测量值或半导体芯片厚度来控制研磨机的磨削进给速度，使得总是能够产生具有恒定厚度的半导体芯片，而不受磨损的影响的磨石，即使有什么。

4. 发明专利

JP2006303051A Wafer grinding method and polishing apparatus 审中-公开
标题翻译： WAFER研磨法和抛光装置
公开(公告)号：JP2006303051A
公开(公告)日：2006-11-02
申请号：JP2005120495
申请日：2005-04-19
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： TAJIRI KAZUTAKA , YOSHIDA MIKI , SANDO HIDEYUKI , ARAI KAZUNAO
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a wafer grinding method and a grinding apparatus where grinding dust is not adhered strongly to a protection tape adhered to the surface of a wafer.
SOLUTION: The method of grinding wafers adhered to a protection tape to the surface thereof comprises a hydrophilic property applying step for generating ozone by the irradiation of an ultraviolet ray to the protection tape adhered to the surface of the wafer, and giving a hydrophilic property to the protection tape by generating active oxygen; and a grinding step for holding the protection tape side of the wafer to which the protection tape given the hydrophilic property is adhered with a chuck table, and grinding the rear surface of the wafer by a grinding means while grinding water is supplied to the grinding part of the wafer held by the chuck table.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供研磨粉尘不粘附到粘附到晶片表面的保护带的晶片研磨方法和研磨装置。解决方案：将附着在保护带上的晶片研磨到其表面的方法包括亲水性施加步骤，用于通过将紫外线照射产生臭氧，附着到晶片表面上的保护带上，通过产生活性氧对保护带的亲水性; 以及研磨工序，用于保持具有亲水性的保护带的保护胶带侧用卡盘台粘合，并且通过研磨装置研磨晶片的后表面，同时将研磨水供给到研磨部由夹盘保持的晶片。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2004319697A System for processing electrode formed on planar article 审中-公开
公开(公告)号：JP2004319697A
公开(公告)日：2004-11-11
申请号：JP2003110536
申请日：2003-04-15
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： ARAI KAZUNAO , MORI TAKASHI , SANDO HIDEYUKI , NAMIOKA SHINICHI
IPC分类号： B23C1/14 , B23C3/13 , H01L21/60 , H01L21/68
CPC分类号： H01L21/6836 , B24B7/16 , H01L24/11 , H01L2221/68327 , H01L2224/05568 , H01L2224/05573 , H01L2224/1134 , H01L2224/13144 , H01L2224/16 , H01L2224/45144 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01033 , H01L2924/01079 , Y10T409/3042 , Y10T409/305712 , Y10T409/305768 , H01L2924/00014 , H01L2224/13099 , H01L2924/00 , H01L2224/05624
摘要： PROBLEM TO BE SOLVED: To provide a processing system capable of uniforming the height of a plurality of electrodes protruding from the surface of a planar article easily without short-circuiting the electrodes. SOLUTION: The processing system for uniforming the height of a plurality of electrodes protruding from the surface of a planar article comprises a chuck table having a surface for mounting a planar article and arranged to move between a workpiece carry-in/carry-out region and a processing region, a mechanism for moving the chuck table to the carry-in/carry-out region and the processing region, a cutting unit disposed in the processing region and having a cutting tool for cutting the plurality of electrodes projecting from the surface of the planar article held on the chuck table and uniforming the height of the electrodes, a cutting unit feeding mechanism for advancing/retracting the cutting unit in the direction perpendicular to the mounting surface of the chuck table, a mechanism for carrying the planar article into the chuck table positioned at the workpiece carry-in/carry-out region, and a mechanism for carrying out the processed planar article held on the chuck table positioned at the workpiece carry-in/carry-out region. COPYRIGHT: (C)2005,JPO&NCIPI

6. 发明专利

JP2004319699A Flip chip bonder 有权
公开(公告)号：JP2004319699A
公开(公告)日：2004-11-11
申请号：JP2003110538
申请日：2003-04-15
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： ARAI KAZUNAO , MORI TAKASHI , SANDO HIDEYUKI , NAMIOKA SHINICHI
IPC分类号： H01L21/60 , B23K20/00
CPC分类号： B23K20/007 , H01L24/11 , H01L24/12 , H01L24/45 , H01L24/75 , H01L24/78 , H01L24/81 , H01L2224/05568 , H01L2224/05573 , H01L2224/1134 , H01L2224/13099 , H01L2224/13144 , H01L2224/45144 , H01L2224/749 , H01L2224/75 , H01L2224/7565 , H01L2224/78301 , H01L2224/81801 , H01L2224/85205 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01039 , H01L2924/01068 , H01L2924/01079 , H01L2924/00 , H01L2224/48 , H01L2924/00015 , H01L2224/05624
摘要： PROBLEM TO BE SOLVED: To provide a flip chip bonder having a function for uniforming the height of a plurality of electrodes formed to protrude from the surface of a semiconductor chip easily without causing short circuit.
SOLUTION: The flip chip bonder comprising a means for holding a packaging substrate, and a chip die bonder for bonding a semiconductor chip having a plurality of electrodes formed to protrude from the surface to the packaging substrate held by the packaging substrate holding means is further provided with a chuck table arranged to move to a semiconductor chip carry-in area, a semiconductor chip carry-out area and an electrode cutting area and to hold the semiconductor chip, a means having a cutter for cutting the plurality of electrodes formed to protrude from the surface of the semiconductor chip held by the chuck table arranged in the electrode cutting area and uniforming the height thereof, a means for carrying in the semiconductor chip to the chuck table positioned at the semiconductor chip carry-in area, and a means for carrying out the processed semiconductor chip to the chuck table positioned at the semiconductor chip carry-out area.
COPYRIGHT: (C)2005,JPO&NCIPI

7. 发明专利

JP2006295050A Method and apparatus of cutting wafer 有权
标题翻译：切割方法和装置
公开(公告)号：JP2006295050A
公开(公告)日：2006-10-26
申请号：JP2005117049
申请日：2005-04-14
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： TAJIRI KAZUTAKA , YOSHIDA MIKI , SUGIMOTO MITSUNOBU , SANDO HIDEYUKI
IPC分类号： H01L21/301
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus of cutting a wafer capable of preventing cut chips generated in cutting from attaching to the surface of the wafer. SOLUTION: The cutting method of the wafer is for cutting the wafer along predetermined division-expected lines formed on the wafer by a cutting means, while supplying cutting water to the wafer held on a chuck table. The method includes a hydrophilic property applying step of irradiating ultraviolet rays to a surface to be cut of the wafer for generating ozone, and also generating active oxygen to make the surface hydrophilic; and a cutting step of holding the wafer with a hydrophilic property applied on the chuck table, and cutting along the predetermined division-expected lines formed on the wafer by the cutting means while supplying the cutting water to the wafer held on the chuck table. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种切割能够防止切割中产生的切屑的晶片附着到晶片表面的方法和装置。解决方案：晶片的切割方法是通过切割装置沿着形成在晶片上的预定分割预期线切割晶片，同时向保持在卡盘台上的晶片供应切割水。该方法包括将紫外线照射到用于产生臭氧的晶片的待切割表面的亲水性施加步骤，并且还产生活性氧以使表面亲水; 以及切割步骤，其将具有亲水性的夹持晶片保持在卡盘台上，并且通过切割装置沿着形成在晶片上的预定分割预期线切割，同时向保持在卡盘台上的晶片供给切割水。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2005150360A Method for processing wafer 审中-公开
标题翻译：加工方法
公开(公告)号：JP2005150360A
公开(公告)日：2005-06-09
申请号：JP2003385254
申请日：2003-11-14
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： SANDO HIDEYUKI , YOSHIDA MIKI
IPC分类号： H01L21/301
摘要： PROBLEM TO BE SOLVED: To ensure efficient cleaning effect without lowering the service life of a grinding stone such as a cutting blade or the like, and to keep the quality of an object to be processed when the object is cut or polished by the grinding stone while a processing water is used. SOLUTION: An activated water wherein a pure water is mixed with either of hydrogen molecule or oxygen molecule is generated, and while it is supplied to a wafer, the wafer is polished by a processing means. An object to be processed is hard to be contaminated by contaminant, and its quality is not degraded. Furthermore, a metal forming a grinding stone is not corroded, thereby prolonging the service life of the grinding stone. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了确保高效的清洁效果，而不降低诸如切割刀片等的研磨石的使用寿命，并且当物体被切割或抛光时保持要加工的物体的质量使用加工水时的磨石。解决方案：产生纯水与氢分子或氧分子中的任一个混合的活化水，并且当被提供给晶片时，通过处理装置抛光晶片。被处理物难以被污染物污染，其质量不降解。此外，形成磨石的金属不被腐蚀，从而延长了研磨石的使用寿命。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004319698A Stud bump bonder 审中-公开
公开(公告)号：JP2004319698A
公开(公告)日：2004-11-11
申请号：JP2003110537
申请日：2003-04-15
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： ARAI KAZUNAO , MORI TAKASHI , SANDO HIDEYUKI , NAMIOKA SHINICHI
IPC分类号： H01L21/677 , H01L21/60 , H01L21/68
CPC分类号： H01L2224/11 , H01L2224/1134 , H01L2224/13144 , H01L2924/00014 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a stud bump bonder having a function for forming a plurality of stud bumps on the surface of a workpiece and uniforming the height thereof easily without causing short circuit. SOLUTION: The stud bump bonder for forming stud bumps on the surface of a planar workpiece and having a bonding area and a bump cutting area comprises a means for forming stud bumps on the surface of a workpiece arranged in the bonding area and positioned in the bonding area, and a means having a cutter for cutting a plurality of stud bumps formed on the surface of a workpiece arranged in the bump cutting area and positioned in the bump cutting area and uniforming the height thereof. COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2004119575A Working method of terminal substrate 有权
公开(公告)号：JP2004119575A
公开(公告)日：2004-04-15
申请号：JP2002278947
申请日：2002-09-25
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： ARAI KAZUNAO , SANDO HIDEYUKI
IPC分类号： H01L23/32 , H01L23/498
CPC分类号： H01L23/49816 , H01L2224/16 , H01L2924/15311 , Y10T29/49147 , Y10T29/49149 , Y10T29/49204 , Y10T29/49222 , Y10T82/10
摘要： PROBLEM TO BE SOLVED: To efficiently and economically perform working without short-circuiting terminals when aligning the heights of the heads of terminal substrates each having a plurality of terminals are protruded extremely closely like interposers. SOLUTION: In the terminal substrate provided with a plurality of terminals to form ball electrodes, the terminals are protruded from the surface of the substrate coated with a resist film, the substrate is then held with a rotatable chuck table 17 while leaving the resist film, and the terminals are ground by fitting a bite 19 onto the surface coated with the resist film while rotating the chuck table 17. COPYRIGHT: (C)2004,JPO

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