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1. 发明授权

US07106441B2 Structure and method for a microelectromechanic cylindrical reflective diffraction grating spectrophotometer 有权
$Structure and method for a microelectromechanic cylindrical reflective diffraction grating spectrophotometer$
标题翻译：微机电圆柱反射衍射光栅分光光度计的结构与方法
公开(公告)号：US07106441B2
公开(公告)日：2006-09-12
申请号：US10672207
申请日：2003-09-26
申请人： Decai Sun , Joel A. Kubby , Jingkuang Chen , Alex T. Tran , Patrick Y. Maeda
发明人： Decai Sun , Joel A. Kubby , Jingkuang Chen , Alex T. Tran , Patrick Y. Maeda
IPC分类号： G01J3/20
CPC分类号： G01J3/06 , G01J3/02 , G01J3/0256 , G01J3/20
摘要： A tunable microelectromechanical (MEMS) spectrophotometer with a rotating cylindrical reflective diffraction grating is integrated with a photodetector and an optical fiber light source on a Rowland circle on a monolithic silicon substrate.
摘要翻译：具有旋转圆柱反射衍射光栅的可调谐微机电（MEMS）分光光度计与单片硅衬底上的Rowland圆上的光电检测器和光纤光源集成。

2. 发明授权

US06362512B1 Microelectromechanical structures defined from silicon on insulator wafers 有权
标题翻译：由绝缘体上硅晶片定义的微机电结构
公开(公告)号：US06362512B1
公开(公告)日：2002-03-26
申请号：US09468423
申请日：1999-12-21
申请人： Joel A. Kubby , Jingkuang Chen , Alex T. Tran
发明人： Joel A. Kubby , Jingkuang Chen , Alex T. Tran
IPC分类号： H01L2982
CPC分类号： B81B3/0083 , B81C2201/0109 , B81C2201/019 , B81C2201/0191 , B81C2201/053 , G02B6/4214
摘要： A device structure is defined in a single-crystal silicon (SCS) layer separated by an insulator layer, such as an oxide layer, from a handle wafer. The SCS can be attached to the insulator by wafer bonding, and is selectively etched, as by photolithographic patterning and dry etching. A sacrificial oxide layer can be deposited on the etched SCS, on which polysilicon can be deposited. A protective oxide layer is deposited, and CMOS circuitry and sensors are integrated. Silicon microstructures with sensors connected to CMOS circuitry are released. In addition, holes can be etched through the sacrificial oxide layer, sacrificial oxide can be deposited on the etched SCS, polysilicon can be deposited on the sacrificial oxide, PSG can be deposited on the polysilicon layer, which both can then be patterned.
摘要翻译：器件结构被限定在由来自处理晶片的绝缘体层（例如氧化物层）分离的单晶硅（SCS）层中。 SCS可以通过晶片接合连接到绝缘体，并且通过光刻图案和干蚀刻被选择性地蚀刻。可以在蚀刻的SCS上沉积牺牲氧化物层，在其上沉积多晶硅。沉积保护性氧化物层，并集成CMOS电路和传感器。释放了连接到CMOS电路的传感器的硅微结构。此外，可以通过牺牲氧化物层蚀刻孔，牺牲氧化物可以沉积在蚀刻的SCS上，多晶硅可以沉积在牺牲氧化物上，PSG可以沉积在多晶硅层上，然后可以对其进行图案化。

3. 发明授权

US6054335A Fabrication of scanning III-V compound light emitters integrated with Si-based actuators 有权
标题翻译：与Si基致动器集成的扫描III-V复合发光体的制造
公开(公告)号：US6054335A
公开(公告)日：2000-04-25
申请号：US209866
申请日：1998-12-11
申请人： Decai Sun , Ross D. Bringans , Christopher L. Chua , Philip D. Floyd , Eric Peeters , Joel A. Kubby , Alex T. Tran
发明人： Decai Sun , Ross D. Bringans , Christopher L. Chua , Philip D. Floyd , Eric Peeters , Joel A. Kubby , Alex T. Tran
IPC分类号： B81B3/00 , B81B7/02 , H01L27/15 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/026 , H01S5/042 , H01S5/183 , H01S5/42 , H01L21/00
CPC分类号： H01S5/18308 , H01S5/02288 , H01L27/15 , H01S5/021 , H01S5/02252 , H01S5/4087 , H01S5/423 , H01S5/426
摘要： A III-V compound light emitter is integrated with Si-based actuators. The Proposed devices take advantage of the superior optical properties of III-V compounds and the superior mechanical properties of Si, as well as mature fabrication technologies of Si-Micro-Electro-Mechanical Systems (MEMS). The emitter can be a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL) or an edge emitting laser. Electro or magnetic based actuation from Si-based actuators provides linear or angular movement of the light emitter.
摘要翻译： III-V复合光发射器与Si基致动器集成。提出的器件利用了III-V化合物的优异光学性能和Si的优异机械性能，以及Si-Micro-Electro-Mechanical Systems（MEMS）的成熟制造技术。发射极可以是发光二极管（LED），垂直腔表面发射激光器（VCSEL）或边缘发射激光器。基于Si的致动器的基于电或磁的致动器提供光发射器的线性或角度运动。

4. 发明授权

US06295130B1 Structure and method for a microelectromechanically tunable fabry-perot cavity spectrophotometer 有权
标题翻译：微电子机械可调谐fabry-perot腔分光光度计的结构和方法
公开(公告)号：US06295130B1
公开(公告)日：2001-09-25
申请号：US09469892
申请日：1999-12-22
申请人： Decai Sun , Joel A. Kubby , Alex T. Tran , Eric Peeters
发明人： Decai Sun , Joel A. Kubby , Alex T. Tran , Eric Peeters
IPC分类号： G01B902
CPC分类号： G01J3/26
摘要： A microelectromechanically tunable Fabry-Perot spectrophotometer is provided for color sensing. Optical fiber provides light input to a Fabry-Perot filter which is adjusted by a switched capacitor circuit. Spectral intensity is sensed by an integrated photodetector.
摘要翻译：提供微机电可调法布里 - 珀罗分光光度计，用于色彩检测。光纤向法布里 - 珀罗滤波器提供光输入，该滤波器由开关电容电路调节。光谱强度由集成光电检测器检测。

5. 发明授权

US06661070B2 Micromechanical and microoptomechanical structures with single crystal silicon exposure step 失效
公开(公告)号：US06661070B2
公开(公告)日：2003-12-09
申请号：US10193804
申请日：2002-07-11
申请人： Andrew J. Zosel , Joel A. Kubby , Peter M. Gulvin , Chuang-Chia Lin , Jingkuang Chen , Alex T. Tran
发明人： Andrew J. Zosel , Joel A. Kubby , Peter M. Gulvin , Chuang-Chia Lin , Jingkuang Chen , Alex T. Tran
IPC分类号： H01L2982
CPC分类号： B81C1/00666 , B81B2203/058 , B81C2201/014 , B81C2201/0164 , B81C2201/056 , G02B26/0833
摘要： The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.

6. 发明授权

US06379989B1 Process for manufacture of microoptomechanical structures 有权
标题翻译：微机电结构的制造工艺
公开(公告)号：US06379989B1
公开(公告)日：2002-04-30
申请号：US09468141
申请日：1999-12-21
申请人： Joel A. Kubby , Jingkuang Chen , Alex T. Tran
发明人： Joel A. Kubby , Jingkuang Chen , Alex T. Tran
IPC分类号： H01L2100
CPC分类号： G02B6/43 , G02B6/4214
摘要： A microoptomechanical structure produced by defining a microoptical structure in a single-crystal silicon layer separated by an insulator layer from a handle wafer, such as a SOI wafer, selectively etching the single crystal silicon layer, depositing a sacrificial oxide layer on the etched single crystal silicon layer, depositing and etching a polysilicon layer on the sacrificial oxide layer, with remaining polysilcon forming hinge elements, and releasing formed microoptical structures. Embodiments use an oxide as an insulator, and other embodiments provide for wafer bonding of the silicon layer to the insulator layer.
摘要翻译：通过在由诸如SOI晶片的处理晶片分离的绝缘体层的单晶硅层中限定微光学结构而产生的微机电结构，选择性地蚀刻单晶硅层，在蚀刻的单晶上沉积牺牲氧化物层硅层，沉积和蚀刻牺牲氧化物层上的多晶硅层，形成铰链元件，并释放形成的微光学结构。实施例使用氧化物作为绝缘体，并且其它实施例提供硅层与绝缘体层的晶片结合。

7. 发明授权

US06479315B1 Process for manufacturing micromechanical and microoptomechanical structures with single crystal silicon exposure step 有权
标题翻译：用单晶硅曝光步骤制造微机械和微机电结构的方法
公开(公告)号：US06479315B1
公开(公告)日：2002-11-12
申请号：US09724514
申请日：2000-11-27
申请人： Andrew J. Zosel , Peter M. Gulvin , Jingkuang Chen , Joel A. Kubby , Chuang-Chia Lin , Alex T. Tran
发明人： Andrew J. Zosel , Peter M. Gulvin , Jingkuang Chen , Joel A. Kubby , Chuang-Chia Lin , Alex T. Tran
IPC分类号： H01L2100
CPC分类号： B81C1/00666 , B81B2203/058 , B81C2201/014 , B81C2201/0164 , B81C2201/056 , G02B26/0833
摘要： The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilicon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.
摘要翻译：本发明提供一种微机械或微机电结构。该结构通过包括在衬底层上限定由绝缘体层分离的单晶硅层上的结构的方法制造; 沉积和蚀刻单晶硅层上的多晶硅层，剩余的多晶硅形成结构的机械或光学元件; 暴露单晶硅层的选定区域; 并释放形成的结构。

8. 发明授权

US06567448B1 Scanning III-V compound light emitters integrated with Si-based actuators 有权
标题翻译：扫描III-V复合发光体与Si基致动器集成
公开(公告)号：US06567448B1
公开(公告)日：2003-05-20
申请号：US09210315
申请日：1998-12-11
申请人： Decai Sun , Ross D. Bringans , Christopher L. Chua , Philip D. Floyd , Eric Peeters , Joel A. Kubby , Alex T. Tran
发明人： Decai Sun , Ross D. Bringans , Christopher L. Chua , Philip D. Floyd , Eric Peeters , Joel A. Kubby , Alex T. Tran
IPC分类号： H01S500
CPC分类号： H01S5/18308 , H01S5/021 , H01S5/02252 , H01S5/02288 , H01S5/4087 , H01S5/423 , H01S5/426
摘要： A III-V compound light emitter is integrated with Si-based actuators. The proposed devices take advantage of the superior optical properties of III-V compounds and the superior mechanical properties of Si, as well as mature fabrication technologies of Si-Micro-Electro-Mechanical Systems (MEMS). The emitter can be a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL) or an edge emitting laser. Electro or magnetic based actuation from Si-based actuators provides
摘要翻译： III-V复合光发射器与Si基致动器集成。所提出的器件利用了III-V化合物的优异光学性能和Si的优异机械性能，以及Si-Micro-Electro-Mechanical Systems（MEMS）的成熟制造技术。发射极可以是发光二极管（LED），垂直腔表面发射激光器（VCSEL）或边缘发射激光器。基于Si的致动器的基于电或磁的致动器提供

9. 发明授权

US06506620B1 Process for manufacturing micromechanical and microoptomechanical structures with backside metalization 有权
标题翻译：具有背面金属化的微机械和微机电结构的制造工艺
公开(公告)号：US06506620B1
公开(公告)日：2003-01-14
申请号：US09724515
申请日：2000-11-27
申请人： Bruce R. Scharf , Joel A. Kubby , Chuang-Chia Lin , Alex T. Tran , Andrew J. Zosel , Peter M. Gulvin , Jingkuang Chen
发明人： Bruce R. Scharf , Joel A. Kubby , Chuang-Chia Lin , Alex T. Tran , Andrew J. Zosel , Peter M. Gulvin , Jingkuang Chen
IPC分类号： H01L2100
CPC分类号： B81C1/00484 , B81B2201/042 , B81B2203/0118 , B81C1/00666 , B81C2201/0142
摘要： The present invention provides a micromechanical or microoptomechanical structure produced by a process comprising defining the structure in a single-crystal silicon layer separated by an insulator layer from a substrate layer; selectively etching the single crystal silicon layer; depositing and etching a polysilicon layer on the insulator layer, with remaining polysilicon forming mechanical elements of the structure; metalizing a backside of the structure; and releasing the formed structure.
摘要翻译：本发明提供了一种微机械或微机电结构，其通过包括限定由绝缘体层与衬底层分隔的单晶硅层中的结构的方法而产生; 选择性地蚀刻单晶硅层; 沉积和蚀刻绝缘体层上的多晶硅层，剩余的多晶硅形成结构的机械元件; 金属化结构的背面; 并释放形成的结构。

10. 发明授权

US06479311B1 Process for manufacturing micromechanical and microoptomechanical structures with pre-applied patterning 有权
标题翻译：用预制图案化制造微机械和微机电结构的方法
公开(公告)号：US06479311B1
公开(公告)日：2002-11-12
申请号：US09724506
申请日：2000-11-27
申请人： Bruce R. Scharf , Joel A. Kubby , Jingkuang Chen , Peter M. Gulvin , Chuang-Chia Lin , Alex T. Tran
发明人： Bruce R. Scharf , Joel A. Kubby , Jingkuang Chen , Peter M. Gulvin , Chuang-Chia Lin , Alex T. Tran
IPC分类号： H01L2100
CPC分类号： B81C1/00666 , B81B2201/047 , B81B2203/0118
摘要： The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a pattern on a single crystal silicon layer separated by an insulator layer from a substrate layer; defining a structure in the single-crystal silicon layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; and releasing the formed structure.
摘要翻译：本发明提供一种微机械或微机电结构。该结构通过一种工艺制造，该方法包括在由绝缘体层与衬底层隔开的单晶硅层上限定图案; 限定单晶硅层中的结构; 沉积和蚀刻单晶硅层上的多晶硅层，其余的聚硅氧烷形成该结构的机械或光学元件; 并释放形成的结构。

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