专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06506620B1 Process for manufacturing micromechanical and microoptomechanical structures with backside metalization 有权
标题翻译：具有背面金属化的微机械和微机电结构的制造工艺
公开(公告)号：US06506620B1
公开(公告)日：2003-01-14
申请号：US09724515
申请日：2000-11-27
申请人： Bruce R. Scharf , Joel A. Kubby , Chuang-Chia Lin , Alex T. Tran , Andrew J. Zosel , Peter M. Gulvin , Jingkuang Chen
发明人： Bruce R. Scharf , Joel A. Kubby , Chuang-Chia Lin , Alex T. Tran , Andrew J. Zosel , Peter M. Gulvin , Jingkuang Chen
IPC分类号： H01L2100
CPC分类号： B81C1/00484 , B81B2201/042 , B81B2203/0118 , B81C1/00666 , B81C2201/0142
摘要： The present invention provides a micromechanical or microoptomechanical structure produced by a process comprising defining the structure in a single-crystal silicon layer separated by an insulator layer from a substrate layer; selectively etching the single crystal silicon layer; depositing and etching a polysilicon layer on the insulator layer, with remaining polysilicon forming mechanical elements of the structure; metalizing a backside of the structure; and releasing the formed structure.
摘要翻译：本发明提供了一种微机械或微机电结构，其通过包括限定由绝缘体层与衬底层分隔的单晶硅层中的结构的方法而产生; 选择性地蚀刻单晶硅层; 沉积和蚀刻绝缘体层上的多晶硅层，剩余的多晶硅形成结构的机械元件; 金属化结构的背面; 并释放形成的结构。

2. 发明授权

US06479315B1 Process for manufacturing micromechanical and microoptomechanical structures with single crystal silicon exposure step 有权
标题翻译：用单晶硅曝光步骤制造微机械和微机电结构的方法
公开(公告)号：US06479315B1
公开(公告)日：2002-11-12
申请号：US09724514
申请日：2000-11-27
申请人： Andrew J. Zosel , Peter M. Gulvin , Jingkuang Chen , Joel A. Kubby , Chuang-Chia Lin , Alex T. Tran
发明人： Andrew J. Zosel , Peter M. Gulvin , Jingkuang Chen , Joel A. Kubby , Chuang-Chia Lin , Alex T. Tran
IPC分类号： H01L2100
CPC分类号： B81C1/00666 , B81B2203/058 , B81C2201/014 , B81C2201/0164 , B81C2201/056 , G02B26/0833
摘要： The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilicon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.
摘要翻译：本发明提供一种微机械或微机电结构。该结构通过包括在衬底层上限定由绝缘体层分离的单晶硅层上的结构的方法制造; 沉积和蚀刻单晶硅层上的多晶硅层，剩余的多晶硅形成结构的机械或光学元件; 暴露单晶硅层的选定区域; 并释放形成的结构。

3. 发明授权

US06661070B2 Micromechanical and microoptomechanical structures with single crystal silicon exposure step 失效
公开(公告)号：US06661070B2
公开(公告)日：2003-12-09
申请号：US10193804
申请日：2002-07-11
申请人： Andrew J. Zosel , Joel A. Kubby , Peter M. Gulvin , Chuang-Chia Lin , Jingkuang Chen , Alex T. Tran
发明人： Andrew J. Zosel , Joel A. Kubby , Peter M. Gulvin , Chuang-Chia Lin , Jingkuang Chen , Alex T. Tran
IPC分类号： H01L2982
CPC分类号： B81C1/00666 , B81B2203/058 , B81C2201/014 , B81C2201/0164 , B81C2201/056 , G02B26/0833
摘要： The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.

4. 发明授权

US06479311B1 Process for manufacturing micromechanical and microoptomechanical structures with pre-applied patterning 有权
标题翻译：用预制图案化制造微机械和微机电结构的方法
公开(公告)号：US06479311B1
公开(公告)日：2002-11-12
申请号：US09724506
申请日：2000-11-27
申请人： Bruce R. Scharf , Joel A. Kubby , Jingkuang Chen , Peter M. Gulvin , Chuang-Chia Lin , Alex T. Tran
发明人： Bruce R. Scharf , Joel A. Kubby , Jingkuang Chen , Peter M. Gulvin , Chuang-Chia Lin , Alex T. Tran
IPC分类号： H01L2100
CPC分类号： B81C1/00666 , B81B2201/047 , B81B2203/0118
摘要： The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a pattern on a single crystal silicon layer separated by an insulator layer from a substrate layer; defining a structure in the single-crystal silicon layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; and releasing the formed structure.
摘要翻译：本发明提供一种微机械或微机电结构。该结构通过一种工艺制造，该方法包括在由绝缘体层与衬底层隔开的单晶硅层上限定图案; 限定单晶硅层中的结构; 沉积和蚀刻单晶硅层上的多晶硅层，其余的聚硅氧烷形成该结构的机械或光学元件; 并释放形成的结构。

5. 发明授权

US06362512B1 Microelectromechanical structures defined from silicon on insulator wafers 有权
标题翻译：由绝缘体上硅晶片定义的微机电结构
公开(公告)号：US06362512B1
公开(公告)日：2002-03-26
申请号：US09468423
申请日：1999-12-21
申请人： Joel A. Kubby , Jingkuang Chen , Alex T. Tran
发明人： Joel A. Kubby , Jingkuang Chen , Alex T. Tran
IPC分类号： H01L2982
CPC分类号： B81B3/0083 , B81C2201/0109 , B81C2201/019 , B81C2201/0191 , B81C2201/053 , G02B6/4214
摘要： A device structure is defined in a single-crystal silicon (SCS) layer separated by an insulator layer, such as an oxide layer, from a handle wafer. The SCS can be attached to the insulator by wafer bonding, and is selectively etched, as by photolithographic patterning and dry etching. A sacrificial oxide layer can be deposited on the etched SCS, on which polysilicon can be deposited. A protective oxide layer is deposited, and CMOS circuitry and sensors are integrated. Silicon microstructures with sensors connected to CMOS circuitry are released. In addition, holes can be etched through the sacrificial oxide layer, sacrificial oxide can be deposited on the etched SCS, polysilicon can be deposited on the sacrificial oxide, PSG can be deposited on the polysilicon layer, which both can then be patterned.
摘要翻译：器件结构被限定在由来自处理晶片的绝缘体层（例如氧化物层）分离的单晶硅（SCS）层中。 SCS可以通过晶片接合连接到绝缘体，并且通过光刻图案和干蚀刻被选择性地蚀刻。可以在蚀刻的SCS上沉积牺牲氧化物层，在其上沉积多晶硅。沉积保护性氧化物层，并集成CMOS电路和传感器。释放了连接到CMOS电路的传感器的硅微结构。此外，可以通过牺牲氧化物层蚀刻孔，牺牲氧化物可以沉积在蚀刻的SCS上，多晶硅可以沉积在牺牲氧化物上，PSG可以沉积在多晶硅层上，然后可以对其进行图案化。

6. 发明授权

US06379989B1 Process for manufacture of microoptomechanical structures 有权
标题翻译：微机电结构的制造工艺
公开(公告)号：US06379989B1
公开(公告)日：2002-04-30
申请号：US09468141
申请日：1999-12-21
申请人： Joel A. Kubby , Jingkuang Chen , Alex T. Tran
发明人： Joel A. Kubby , Jingkuang Chen , Alex T. Tran
IPC分类号： H01L2100
CPC分类号： G02B6/43 , G02B6/4214
摘要： A microoptomechanical structure produced by defining a microoptical structure in a single-crystal silicon layer separated by an insulator layer from a handle wafer, such as a SOI wafer, selectively etching the single crystal silicon layer, depositing a sacrificial oxide layer on the etched single crystal silicon layer, depositing and etching a polysilicon layer on the sacrificial oxide layer, with remaining polysilcon forming hinge elements, and releasing formed microoptical structures. Embodiments use an oxide as an insulator, and other embodiments provide for wafer bonding of the silicon layer to the insulator layer.
摘要翻译：通过在由诸如SOI晶片的处理晶片分离的绝缘体层的单晶硅层中限定微光学结构而产生的微机电结构，选择性地蚀刻单晶硅层，在蚀刻的单晶上沉积牺牲氧化物层硅层，沉积和蚀刻牺牲氧化物层上的多晶硅层，形成铰链元件，并释放形成的微光学结构。实施例使用氧化物作为绝缘体，并且其它实施例提供硅层与绝缘体层的晶片结合。

7. 发明授权

US07106441B2 Structure and method for a microelectromechanic cylindrical reflective diffraction grating spectrophotometer 有权
$Structure and method for a microelectromechanic cylindrical reflective diffraction grating spectrophotometer$
标题翻译：微机电圆柱反射衍射光栅分光光度计的结构与方法
公开(公告)号：US07106441B2
公开(公告)日：2006-09-12
申请号：US10672207
申请日：2003-09-26
申请人： Decai Sun , Joel A. Kubby , Jingkuang Chen , Alex T. Tran , Patrick Y. Maeda
发明人： Decai Sun , Joel A. Kubby , Jingkuang Chen , Alex T. Tran , Patrick Y. Maeda
IPC分类号： G01J3/20
CPC分类号： G01J3/06 , G01J3/02 , G01J3/0256 , G01J3/20
摘要： A tunable microelectromechanical (MEMS) spectrophotometer with a rotating cylindrical reflective diffraction grating is integrated with a photodetector and an optical fiber light source on a Rowland circle on a monolithic silicon substrate.
摘要翻译：具有旋转圆柱反射衍射光栅的可调谐微机电（MEMS）分光光度计与单片硅衬底上的Rowland圆上的光电检测器和光纤光源集成。

8. 发明授权

US06987920B1 Waveguide structures and methods 失效
标题翻译：波导结构和方法
公开(公告)号：US06987920B1
公开(公告)日：2006-01-17
申请号：US10878834
申请日：2004-06-28
申请人： Kristine A. German , Peter M. Gulvin , Joel A. Kubby , Pinyen Lin , Xueyuan Liu , Yao Rong Wang
发明人： Kristine A. German , Peter M. Gulvin , Joel A. Kubby , Pinyen Lin , Xueyuan Liu , Yao Rong Wang
IPC分类号： G02B6/10
CPC分类号： G02B6/122 , G02B6/105
摘要： A waveguide structure has a base having a base height (h) above a substrate and a rectangular waveguide having a waveguide height (H) above the substrate and a waveguide width (W) between opposing sides of the waveguide.
摘要翻译：波导结构具有在基板上方具有基底高度（h）的基部和在基板上方具有波导高度（H）的矩形波导和波导的相对侧之间的波导宽度（W）。

9. 发明授权

US06985651B2 Thermal actuator with offset beam segment neutral axes and an optical waveguide switch including the same 失效
标题翻译：具有偏转光束段中性轴的热致动器和包括该中间轴的光波导开关
公开(公告)号：US06985651B2
公开(公告)日：2006-01-10
申请号：US10772693
申请日：2004-02-05
申请人： Jun Ma , Joel A. Kubby , Kristine A. German , Peter M. Gulvin , Pinyen Lin
发明人： Jun Ma , Joel A. Kubby , Kristine A. German , Peter M. Gulvin , Pinyen Lin
IPC分类号： G02B6/26 , G02B6/42 , H01H37/00
CPC分类号： B81B3/0018 , G02B6/3566 , G02B6/3576 , G02B6/3584
摘要： A thermal actuator comprises a substantially straight beam. The beam has a beam length and a beam mid-point. The beam comprises a plurality of beam segments with beam segment lengths. Each beam segment has a beam segment neutral axis, thus forming a corresponding plurality of beam segment neutral axes. The beam segment neutral axes are offset along the beam length based on a predetermined pattern. As the beam is heated by an included heating means, the beam buckles. The buckling of the beam, in turn, causes the beam mid-point to translate or move in the predetermined direction. The beam mid-point movement, in turn, operates an included optical waveguide switch. The heating means comprises any of Joule heating, eddy current heating, conduction heating, convection heating and radiation heating.
摘要翻译：热致动器包括基本上直的梁。光束具有光束长度和光束中点。梁包括具有梁段长度的多个梁段。每个光束段具有光束段中性轴线，从而形成相应的多个光束段中性轴线。光束段中性轴基于预定图案沿光束长度偏移。当束被加热装置加热时，光束弯曲。光束的弯曲又使光束中点在预定方向上平移或移动。光束中点运动依次运行附带的光波导开关。加热装置包括焦耳加热，涡流加热，传导加热，对流加热和辐射加热中的任何一种。

10. 发明授权

US06983088B2 Thermal actuator and an optical waveguide switch including the same 失效
标题翻译：热致动器和包括其的光波导开关
公开(公告)号：US06983088B2
公开(公告)日：2006-01-03
申请号：US10634941
申请日：2003-08-05
申请人： Joel A. Kubby , Jun Ma , Kristine A. German , Peter M. Gulvin , Pinyen Lin
发明人： Joel A. Kubby , Jun Ma , Kristine A. German , Peter M. Gulvin , Pinyen Lin
IPC分类号： G02B6/26 , G02B6/42 , H01H37/00
CPC分类号： G02B6/3576 , B81B3/0018 , G02B6/3566 , G02B6/3584
摘要： A thermal actuator comprises a plurality of substantially straight and parallel beams arranged to form a beam array. The midpoint of each beam is attached or coupled to an orthogonal coupling beam. Each array beam has a beam heating parameter with a corresponding beam heating parameter value. The beam heating parameter values vary across the beam array based on a predetermined pattern. As the beams are heated by an included heating means, the distribution of beam temperatures in the beam array becomes asymmetric, thus causing the beam array to buckle. The buckling of the beams in the beam array, in turn, causes the attached coupling beam to move in a predetermined direction. The coupling beam motion, in turn, operates an included optical waveguide switch. The beams in the beam array are heated by any of Joule heating, eddy current heating, conduction heating, convection heating and radiation heating.
摘要翻译：热致动器包括布置成形成束阵列的多个基本上直的和平行的光束。每个光束的中点附加或耦合到正交耦合光束。每个阵列光束具有具有对应的光束加热参数值的光束加热参数。光束加热参数值基于预定图案在波束阵列上变化。当束被加热装置加热时，光束阵列中光束温度的分布变得不对称，从而使光束阵列发生弯曲。光束阵列中的光束的弯曲又使连接的光束沿预定的方向移动。耦合光束运动反过来操作包括的光波导开关。光束阵列中的光束通过焦耳加热，涡流加热，传导加热，对流加热和辐射加热中的任何一种加热。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式