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    • 8. 发明授权
    • Amorphous silicon sensor with micro-spring interconnects for achieving high uniformity in integrated light-emitting sources
    • 具有微弹簧互连的非晶硅传感器,用于实现集成发光源的高均匀性
    • US06794725B2
    • 2004-09-21
    • US09469122
    • 1999-12-21
    • Francesco LemmiChristopher L. ChuaPing MeiJengPing LuDavid K. ForkHarry J. McIntyre
    • Francesco LemmiChristopher L. ChuaPing MeiJengPing LuDavid K. ForkHarry J. McIntyre
    • H01L3100
    • H01L31/1055B41J2/45H01L25/0753H01L31/1016H01L2924/0002H01L2924/3011H01S5/02H01S5/0262H01S5/4025H01L2924/00
    • A hybrid structure or device is provided wherein carried on a single substrate is at least one micro-spring interconnect having an elastic material that is initially fixed to a surface of the substrate, an anchor portion which is fixed to the substrate surface and a free portion. The spring contact is self-assembling in that as the free portion is released it moves out of the plane of the substrate. Also integrated on the substrate is a sensor having an active layer and contacts. The substrate and sensor may be formed of materials which are somewhat partially transparent to light at certain infrared wavelengths. The integrated sensor/spring contact configuration may be used in an imaging system to sense output from a light source which is used for image formation. The light source may be a laser array, LED array or other appropriate light source. The sensor is appropriately sized to sense all or some part of light from the light source. The sensor may also be sufficiently transparent so that light is not blocked from its emission path, with a contrast ratio such that it only absorbs a small fraction of light passing therethrough. An additional characteristic is that the manufacturing process is compatible with the manufacturing process for the micro-spring interconnects. Data from the sensor is used as light source correction information. This information is provided to a calibration configuration which allows for calibration of high-speed systems.
    • 提供了一种混合结构或装置,其中承载在单个基板上的是具有弹性材料的至少一个微弹簧互连,弹性材料最初固定到基板的表面,固定到基板表面的锚定部分和自由部分 。 弹簧接触件是自组装的,因为随着自由部分的释放,它移出基板的平面。 还集成在基板上的是具有有源层和触点的传感器。 衬底和传感器可以由对某些红外波长的光稍微部分透明的材料形成。 集成的传感器/弹簧接触配置可用于成像系统中以感测用于图像形成的光源的输出。 光源可以是激光阵列,LED阵列或其他合适的光源。 传感器的尺寸适当,可以感测来自光源的全部或部分光线。 传感器也可以是足够透明的,使得光不被其发射路径阻挡,对比度使得其仅吸收通过其中的一小部分光。 另外的特征是制造工艺与微弹簧互连的制造工艺兼容。 来自传感器的数据用作光源校正信息。 该信息被提供给允许校准高速系统的校准配置。
    • 9. 发明申请
    • METHOD OF FORMING GROUP IV SEMICONDUCTOR JUNCTIONS USING LASER PROCESSING
    • 使用激光加工形成IV族半导体结的方法
    • US20080305619A1
    • 2008-12-11
    • US12114141
    • 2008-05-02
    • Francesco LemmiAndreas MeiselHomer Antoniadis
    • Francesco LemmiAndreas MeiselHomer Antoniadis
    • H01L21/20H01L21/02
    • H01L31/182H01L21/0237H01L21/02524H01L21/02532H01L21/02601H01L21/02628H01L21/02675H01L31/03682H01L31/03921H01L31/068H01L31/077Y02E10/546Y02E10/547Y02P70/521
    • A method forming a Group IV semiconductor junction on a substrate is disclosed. The method includes depositing a first set Group IV semiconductor nanoparticles on the substrate. The method also includes applying a first laser at a first laser wavelength, a first fluence, a first pulse duration, a first number of repetitions, and a first repetition rate to the first set Group IV semiconductor nanoparticles to form a first densified film with a first thickness, wherein the first laser wavelength and the first fluence are selected to limit a first depth profile of the first laser to the first thickness. The method further includes depositing a second set Group IV semiconductor nanoparticles on the first densified film. The method also includes applying a second laser at a second laser wavelength, a second fluence, a second pulse duration, a second number of repetitions, and a second repetition rate to the second set Group IV semiconductor nanoparticles to form a second densified film with a second thickness, wherein the second laser wavelength and the second fluence are selected to limit a second depth profile of the second laser to the second thickness.
    • 公开了一种在衬底上形成IV族半导体结的方法。 该方法包括在衬底上沉积第一组IV族半导体纳米颗粒。 该方法还包括将第一激光波长的第一激光,第一注量,第一脉冲持续时间,第一次重复和第一重复率应用于第一组IV族半导体纳米颗粒,以形成第一致密化膜,其具有 第一厚度,其中选择第一激光波长和第一注量以将第一激光器的第一深度分布限制到第一厚度。 该方法还包括在第一致密化膜上沉积第二组IV族半导体纳米颗粒。 该方法还包括将第二激光器以第二激光波长,第二注量,第二脉冲持续时间,第二数量的重复和第二重复率施加到第二组IV族半导体纳米颗粒以形成第二致密化膜,其具有 第二厚度,其中选择第二激光波长和第二注量以将第二激光器的第二深度分布限制到第二厚度。