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1. 发明授权

US5726080A Method of performing edge-aligned implants 失效
标题翻译：执行边缘对齐植入物的方法
公开(公告)号：US5726080A
公开(公告)日：1998-03-10
申请号：US757715
申请日：1996-11-26
申请人： David L. Losee , James P. Lavine , Gilbert A. Hawkins , Mary R. Suchanski
发明人： David L. Losee , James P. Lavine , Gilbert A. Hawkins , Mary R. Suchanski
IPC分类号： H01L21/339 , H01L21/265 , H01L21/70 , H01L27/00
CPC分类号： H01L29/66954
摘要： A methodology for producing an edge aligned implant beneath an electrode with reduced lateral spread, comprising the steps of: providing a dielectric layer on a substrate; forming an etch-stop layer on the dielectric layer; forming a sacrificial material layer on the etch-stop layer; patterning the sacrificial layer with openings to expose the etch-stop layer and which openings corresponding to gate electrode positions; implanting dopant atoms through the opening into the substrate in regions adjacent to at least one edge of the opening in the sacrificial layer; depositing electrode material into the openings and onto the sacrificial layer; forming an electrode layer, either by itself of with another layer deposited or grown over it to allow alteration to provide an etch rate differential. The material that etches relatively slowly becomes or protects the gate electrode region. The alteration is done by a process such as diffusion or irradiation.
摘要翻译：一种用于在具有减小的横向扩展的电极下方产生边缘对准植入物的方法，包括以下步骤：在基底上提供介电层; 在所述电介质层上形成蚀刻停止层; 在所述蚀刻停止层上形成牺牲材料层; 用开口图案化牺牲层以暴露蚀刻停止层以及对应于栅电极位置的哪些开口; 在与所述牺牲层中的所述开口的至少一个边缘相邻的区域中将掺杂剂原子通过所述开口注入到所述衬底中; 将电极材料沉积到所述开口中并到达所述牺牲层上; 形成电极层，或者通过其上沉积或生长在其上的另一层本身，以允许改变以提供蚀刻速率差。蚀刻相对缓慢的材料变成或保护栅电极区域。改变是通过扩散或照射等过程完成的。

2. 发明授权

US5516716A Method of making a charge coupled device with edge aligned implants and electrodes 失效
标题翻译：制造具有边缘对准植入物和电极的电荷耦合器件的方法
公开(公告)号：US5516716A
公开(公告)日：1996-05-14
申请号：US349120
申请日：1994-12-02
申请人： Gilbert A. Hawkins , David L. Losee
发明人： Gilbert A. Hawkins , David L. Losee
IPC分类号： H01L29/762 , H01L21/339 , H01L29/423
CPC分类号： H01L29/66954 , H01L29/42396
摘要： A fully self-aligned, charge coupled device (CCD) comprises a semiconductor substrate having implanted barrier and/or storage regions, an insulating dielectric layer disposed over the substrate, a first layer of closely spaced electrodes in self-alignment with at least one implant underneath the first electrodes, a second layer of closely spaced electrodes in self-alignment with the first electrodes and with at least one implant underneath the second electrodes also in self-alignment with the first electrodes. The process for fabricating the fully self-aligned CCD comprises the steps of first forming upon the semiconductive substrate, a uniform insulating dielectric layer; then forming a sacrificial layer upon the dielectric layer, the sacrificial layer patterned by removal of selected portions of the layer, at least one edge of the patterned sacrificial layer serving as a mask for ion implantation into the semiconductor substrate, the mask optionally comprising also photoresist; then forming in only those regions in which the sacrificial layer was removed, a first gate electrode; then removing the sacrificial layer, thereby exposing the sidewalls of the closely spaced first gate electrode, at least one of the sidewalls serving as a mask for a second ion implantation into the semiconductor substrate, the mask optionally comprising also photoresist; then forming a first oxide layer over the exposed surface of the first gate electrode; then depositing and patterning a second gate electrode layer to form a second gate electrode disposed between portions of the first gate electrode.
摘要翻译：完全自对准的电荷耦合器件（CCD）包括具有植入的势垒和/或存储区域的半导体衬底，设置在衬底上的绝缘介电层，与至少一个植入物自对准的紧密间隔的电极的第一层在第一电极下面，与第一电极自对准的第二层紧密间隔的电极，以及与第一电极自对准的第二电极下方的至少一个植入物。制造完全自对准CCD的工艺包括以下步骤：首先在半导体衬底上形成均匀的绝缘介电层; 然后在介电层上形成牺牲层，通过去除该层的选定部分图案化牺牲层，图案化牺牲层的至少一个边缘用作用于离子注入到半导体衬底中的掩模，掩模任选地还包括光致抗蚀剂 ; 然后仅形成除去牺牲层的那些区域，第一栅电极; 然后去除牺牲层，从而暴露紧密间隔的第一栅电极的侧壁，至少一个侧壁用作第二离子注入到半导体衬底中的掩模，掩模可选地还包括光致抗蚀剂; 然后在所述第一栅极的暴露表面上形成第一氧化物层; 然后沉积和构图第二栅极电极层以形成设置在第一栅电极的部分之间的第二栅电极。

3. 发明授权

US5641700A Charge coupled device with edge aligned implants and electrodes 失效
标题翻译：电荷耦合器件具有边缘对准的植入物和电极
公开(公告)号：US5641700A
公开(公告)日：1997-06-24
申请号：US558629
申请日：1995-11-14
申请人： Gilbert A. Hawkins , David L. Losee
发明人： Gilbert A. Hawkins , David L. Losee
IPC分类号： H01L29/762 , H01L21/339 , H01L29/423 , H01L21/265 , H01L21/70 , H01L27/00
CPC分类号： H01L29/66954 , H01L29/42396
摘要： A fully self-aligned, charge coupled device (CCD) comprises a semiconductor substrate having implanted barrier and/or storage regions, an insulating dielectric layer disposed over the substrate, a first layer of closely spaced electrodes in self-alignment with at least one implant underneath the first electrodes, a second layer of closely spaced electrodes in self-alignment with the first electrodes and with at least one implant underneath the second electrodes also in self-alignment with the first electrodes. The process for fabricating the fully self-aligned CCD comprises the steps of first forming upon the semiconductive substrate, a uniform insulating dielectric layer; then forming a sacrificial layer upon the dielectric layer, the sacrificial layer patterned by removal of selected portions of the layer, at least one edge of the patterned sacrificial layer serving as a mask for ion implantation into the semiconductor substrate, the mask optionally comprising also photoresist; then forming in only those regions in which the sacrificial layer was removed, a first gate electrode; then removing the sacrificial layer, thereby exposing the sidewalls of the closely spaced first gate electrode, at least one of the sidewalls serving as a mask for a second ion implantation into the semiconductor substrate, the mask optionally comprising also photoresist; then forming a first oxide layer over the exposed surface of the first gate electrode; then depositing and patterning a second gate electrode layer to form a second gate electrode disposed between portions of the first gate electrode.
摘要翻译：完全自对准的电荷耦合器件（CCD）包括具有植入的势垒和/或存储区域的半导体衬底，设置在衬底上的绝缘介电层，与至少一个植入物自对准的紧密间隔的电极的第一层在第一电极下面，与第一电极自对准的第二层紧密间隔的电极，以及与第一电极自对准的第二电极下方的至少一个植入物。制造完全自对准CCD的工艺包括以下步骤：首先在半导体衬底上形成均匀的绝缘介电层; 然后在介电层上形成牺牲层，通过去除该层的选定部分图案化牺牲层，图案化牺牲层的至少一个边缘用作用于离子注入到半导体衬底中的掩模，掩模任选地还包括光致抗蚀剂 ; 然后仅形成除去牺牲层的那些区域，第一栅电极; 然后去除牺牲层，从而暴露紧密间隔的第一栅电极的侧壁，至少一个侧壁用作第二离子注入到半导体衬底中的掩模，掩模可选地还包括光致抗蚀剂; 然后在所述第一栅极的暴露表面上形成第一氧化物层; 然后沉积和构图第二栅极电极层以形成设置在第一栅电极的部分之间的第二栅电极。

4. 发明授权

US4746622A Process for preparing a charge coupled device with charge transfer direction biasing implants 失效
标题翻译：用于制备具有电荷转移方向偏置植入物的电荷耦合器件的方法
公开(公告)号：US4746622A
公开(公告)日：1988-05-24
申请号：US916259
申请日：1986-10-07
申请人： Gilbert A. Hawkins , David L. Losee , Robert L. Nielsen
发明人： Gilbert A. Hawkins , David L. Losee , Robert L. Nielsen
IPC分类号： H01L29/762 , H01L21/339 , H01L29/768 , H01L29/78
CPC分类号： H01L29/66954 , H01L29/76841
摘要： A process is disclosed of preparing a charge coupled device containing charge transfer direction biasing implants wherein the steps and materials for patterning electrodes and implants promote accurate edge alignments of implants and electrodes while minimizing strains and avoiding temperatures that permit unwanted lattice or intersticial ion migration in the semiconductive substrate.
摘要翻译：公开了一种制备包含电荷转移方向偏置植入物的电荷耦合装置的方法，其中用于图案化电极和植入物的步骤和材料促进植入物和电极的精确边缘对准，同时使应变最小化并避免允许不必要的晶格或间质离子迁移的温度半导体衬底。

5. 发明授权

US08454134B1 Printed drop density reconfiguration 有权
标题翻译：印刷液滴密度重新配置
公开(公告)号：US08454134B1
公开(公告)日：2013-06-04
申请号：US13358560
申请日：2012-01-26
申请人： Gilbert A. Hawkins , James A. Katerberg
发明人： Gilbert A. Hawkins , James A. Katerberg
IPC分类号： B41J2/02
CPC分类号： B41J2/03 , B41J2002/022 , B41J2002/031 , B41J2002/033
摘要： A method of printing includes selectively loading a memory element during a printing operation with data that modifies a subsequent actuation of jet control elements to form or steer or form and steer print drops that print pixels on a receiver in a second regularly spaced pixel grid, the second regularly spaced pixel grid having a second spatial density of pixels extending in a direction perpendicular to a travel path of the receiver that is different when compared to a first spatial density of a first regularly spaced pixel grid, and printing pixels on the receiver in the second regularly spaced pixel grid.
摘要翻译：打印方法包括在打印操作期间选择性地加载存储元件，该数据修改喷射控制元件的后续动作，以形成或转向或形成和引导在第二规则间隔的像素网格中打印接收器上的像素的打印液滴，第二规则间隔的像素栅格，具有在与第一规则间隔的像素栅格的第一空间密度相比时在垂直于接收器的行进路径的方向上延伸的像素的第二空间密度，并且在接收器中打印像素第二个定期间隔的像素网格。

6. 发明申请

US20100259586A1 DEVICE FOR MERGING FLUID DROPS OR JETS 有权
标题翻译：装配流体液体或喷嘴的装置
公开(公告)号：US20100259586A1
公开(公告)日：2010-10-14
申请号：US12420846
申请日：2009-04-09
申请人： Gilbert A. Hawkins , Zhanjun Gao , Yonglin Xie , Edward P. Furlani , Kam C. Ng
发明人： Gilbert A. Hawkins , Zhanjun Gao , Yonglin Xie , Edward P. Furlani , Kam C. Ng
IPC分类号： B41J2/09
CPC分类号： B41J2/07 , B41J2/09 , B41J2/095
摘要： A device and method of controlling fluid flow are provided. The method includes providing a moving fluid including a fluid flow characteristic; providing a fluid control device including a fluid control surface, the fluid control surface including a pattern; causing the fluid to contact the fluid control surface of the fluid control device; and causing the fluid to interact with the fluid control surface of the fluid control device using the pattern of the fluid control surface that, when activated, causes adjacent fluid drops to merge or coalesce while the fluid is in contact with the pattern of the fluid control device such that the fluid flow characteristic of the fluid after interacting with the fluid control surface of the fluid control device is different from the fluid flow characteristic of the fluid before interaction with the fluid control surface of the fluid control device.
摘要翻译：提供了一种控制流体流动的装置和方法。该方法包括提供包括流体流动特征的移动流体; 提供包括流体控制表面的流体控制装置，所述流体控制表面包括图案; 使流体接触流体控制装置的流体控制表面; 并且使用流体控制表面的图案使流体与流体控制装置的流体控制表面相互作用，当流体控制表面被激活时，当流体与流体控制的图案接触时，相邻的流体液滴合并或聚结装置，使得与流体控制装置的流体控制表面相互作用之后的流体的流体流动特性不同于在与流体控制装置的流体控制表面相互作用之前的流体的流体流动特性。

7. 发明申请

US20100112758A1 CONNECTING MICROSIZED DEVICES USING ABLATIVE FILMS 审中-公开
标题翻译：使用压缩薄膜连接微型器件
公开(公告)号：US20100112758A1
公开(公告)日：2010-05-06
申请号：US12635747
申请日：2009-12-11
申请人： M. Zaki Ali , A. Peter Stolt , Gilbert A. Hawkins , Thomas M. Stephany
发明人： M. Zaki Ali , A. Peter Stolt , Gilbert A. Hawkins , Thomas M. Stephany
IPC分类号： H01L21/50
CPC分类号： H01L23/48 , B81B2207/098 , B81C1/00301 , H01L21/4864 , H01L24/24 , H01L24/32 , H01L24/82 , H01L24/83 , H01L2224/1131 , H01L2224/24226 , H01L2224/244 , H01L2224/24992 , H01L2224/27013 , H01L2224/73217 , H01L2224/82039 , H01L2224/82102 , H01L2224/83051 , H01L2224/838 , H01L2224/92144 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/0781 , H01L2924/12041 , H01L2924/1306 , H05K3/0032 , H05K3/107 , H05K3/125 , H05K3/1258 , H05K3/321 , H05K2201/09472 , H05K2201/10674 , H05K2203/013 , H05K2203/0568 , H05K2203/1469 , Y10S438/94 , H01L2924/00 , H01L2224/0401
摘要： A method of providing connectivity to a microsized device, the method includes the steps of providing an ablative base material having at least a top surface; providing a die having a first and second surface and having bonding pads at least upon the first surface; placing the die with the at least first surface of the die contacting the at least first surface of the ablative base material; and ablating a channel in the ablative material proximate to the die.
摘要翻译：提供与微型化装置的连通性的方法，该方法包括以下步骤：提供具有至少顶表面的烧蚀性基材; 提供具有第一和第二表面的模具，并且至少在所述第一表面上具有焊盘; 使所述模具与所述模具的所述至少第一表面接触所述可烧蚀基材的所述至少第一表面; 并且在靠近模具的烧蚀材料中烧蚀通道。

8. 发明申请

US20100109168A1 CONNECTING MICROSIZED DEVICES USING ABLATIVE FILMS 审中-公开
公开(公告)号：US20100109168A1
公开(公告)日：2010-05-06
申请号：US12635750
申请日：2009-12-11
申请人： M. Zaki Ali , A. Peter Stolt , Gilbert A. Hawkins , Thomas M. Stephany
发明人： M. Zaki Ali , A. Peter Stolt , Gilbert A. Hawkins , Thomas M. Stephany
IPC分类号： H01L23/485
CPC分类号： H01L23/48 , B81B2207/098 , B81C1/00301 , H01L21/4864 , H01L24/24 , H01L24/32 , H01L24/82 , H01L24/83 , H01L2224/1131 , H01L2224/24226 , H01L2224/244 , H01L2224/24992 , H01L2224/27013 , H01L2224/73217 , H01L2224/82039 , H01L2224/82102 , H01L2224/83051 , H01L2224/838 , H01L2224/92144 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/0781 , H01L2924/12041 , H01L2924/1306 , H05K3/0032 , H05K3/107 , H05K3/125 , H05K3/1258 , H05K3/321 , H05K2201/09472 , H05K2201/10674 , H05K2203/013 , H05K2203/0568 , H05K2203/1469 , Y10S438/94 , H01L2924/00 , H01L2224/0401
摘要： A method of providing connectivity to a microsized device, the method includes the steps of providing an ablative base material having at least a top surface; providing a die having a first and second surface and having bonding pads at least upon the first surface; placing the die with the at least first surface of the die contacting the at least first surface of the ablative base material; and ablating a channel in the ablative material proximate to the die.

9. 发明授权

US07434919B2 Ink jet break-off length measurement apparatus and method 有权
标题翻译：喷墨断裂长度测量装置和方法
公开(公告)号：US07434919B2
公开(公告)日：2008-10-14
申请号：US11229454
申请日：2005-09-16
申请人： Gilbert A. Hawkins , Michael J. Piatt , John C. Brazas , Stephen F. Pond
发明人： Gilbert A. Hawkins , Michael J. Piatt , John C. Brazas , Stephen F. Pond
IPC分类号： B41J2/07
CPC分类号： B41J2/03 , B41J2002/022 , B41J2002/033 , B41J2202/13 , B41J2202/16
摘要： A jet break-off length measurement apparatus for a continuous liquid drop emission system is provided. The jet break-off length measurement apparatus comprises a liquid drop emitter containing a positively pressurized liquid in flow communication with at least one nozzle for emitting a continuous stream of liquid. Heater resistor apparatus is adapted to transfer pulses of thermal energy to the liquid in flow communication with the at least one nozzle sufficient to cause the break-off of the at least one continuous stream of liquid into a stream of drops of predetermined volumes. A sensing apparatus adapted to detect the stream of drops of predetermined volumes is provided. A control apparatus is adapted to determine a characteristic of the stream of drops of predetermined volumes that is related to the break-off length. Further apparatus is adapted to inductively charge at least one drop and to cause electric field deflection of charged drops. Jet stimulation apparatus comprising a plurality of transducers corresponding to the plurality of nozzles and adapted to transfer pulses of energy to the liquid sufficient to cause the break-off of the plurality of continuous streams of liquid into a plurality of streams of drops of predetermined volumes is also disclosed. Methods of measuring the jet break-off length using phase sensitive amplification circuitry are disclosed.
摘要翻译：提供一种用于连续液滴发射系统的射流断裂长度测量装置。射流断裂长度测量装置包括液滴发射器，其包含与至少一个喷嘴流动连通的正压液体，用于发射连续的液体流。加热器电阻器装置适于将热能的脉冲传送到与至少一个喷嘴流动连通的液体，足以使至少一个连续的液体流分解成预定体积的液滴流。提供了适于检测预定体积的液滴流的感测装置。控制装置适于确定与断裂长度相关的预定体积的液滴流的特性。进一步的装置适于对至少一滴进行电感充电并引起带电液滴的电场偏转。喷射刺激装置包括对应于多个喷嘴的多个换能器并且适于将足够的能量脉冲转移到液体，以使多个连续的液体流分解成多个预定体积的液滴流，也披露。公开了使用相位敏感放大电路测量射流断裂长度的方法。

10. 发明授权

US07401906B2 Ink jet break-off length controlled dynamically by individual jet stimulation 有权
标题翻译：通过单独喷射刺激动态控制喷墨断裂长度
公开(公告)号：US07401906B2
公开(公告)日：2008-07-22
申请号：US11758786
申请日：2007-06-06
申请人： Gilbert A. Hawkins , Stephen F. Pond , Michael J. Piatt
发明人： Gilbert A. Hawkins , Stephen F. Pond , Michael J. Piatt
IPC分类号： B41J2/02
CPC分类号： B41J2/03 , B41J2002/022 , B41J2002/033 , B41J2202/13 , B41J2202/16
摘要： A jet break-off length control apparatus for a continuous liquid drop emission system is provided. The jet break-off length control apparatus comprises a liquid drop emitter containing a positively pressurized liquid in flow communication with at least one nozzle for emitting a continuous stream of liquid. Resistive heater apparatus is adapted to transfer pulses of thermal energy to the liquid in flow communication with the at least one nozzle sufficient to cause the break-off of the at least one continuous stream of liquid into a stream of drops of predetermined volumes. A sensing apparatus adapted to detect the stream of drops of predetermined volumes is provided. The jet break-off length control apparatus further comprises a control apparatus adapted to calculate a characteristic of the stream of drops of predetermined volumes and adapted to provide a break-off length calibration signal to the resistive heater apparatus wherein the break-off length calibration signal is determined at least by the characteristic of the stream of drops of predetermined volumes. Further apparatus is adapted to inductively charge at least one drop and to cause electric field deflection of charged drops. The present inventions are additionally configured to control break-off lengths for a plurality of streams of drops of predetermined volumes by determining a break-off length calibration signal that contains information specific to the plurality of streams of drops of predetermined volumes. Jet stimulation apparatus comprised of a plurality of thermomechanical or electromechanical transducer devices that transfer mechanical energy to the fluid are claimed. Methods of controlling the jet break-off length are also disclosed.
摘要翻译：提供一种用于连续液滴发射系统的喷射断裂长度控制装置。喷射断裂长度控制装置包括液滴发射器，其包含与至少一个喷嘴流动连通的正压液体，用于发射连续的液体流。电阻式加热器装置适于将热能的脉冲传送到与至少一个喷嘴流动连通的液体，足以使至少一个连续的液体流分解成预定体积的液滴流。提供了适于检测预定体积的液滴流的感测装置。喷射断裂长度控制装置还包括适于计算预定体积的液滴流的特性的控制装置，并适于向电阻加热器装置提供断开长度校准信号，其中断开长度校准信号至少由预定体积的液滴流的特性确定。进一步的装置适于对至少一滴进行电感充电并引起带电液滴的电场偏转。本发明还被配置为通过确定包含特定于多个预定体积的液滴流的信息的断裂长度校准信号来控制多个预定体积的液滴流的断裂长度。要求具有将机械能传递到流体的多个热机械或机电换能器装置构成的射流刺激装置。还公开了控制喷射断裂长度的方法。

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