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1. 发明授权

US07776638B2 Two epitaxial layers to reduce crosstalk in an image sensor 有权
标题翻译：两个外延层，以减少图像传感器中的串扰
公开(公告)号：US07776638B2
公开(公告)日：2010-08-17
申请号：US12247248
申请日：2008-10-08
申请人： James P. Lavine , Eric G. Stevens
发明人： James P. Lavine , Eric G. Stevens
IPC分类号： H01L21/00
CPC分类号： H01L27/14654 , H01L27/14632 , H01L27/14687
摘要： An image sensor includes a substrate of a first conductivity type having an image area with a plurality of photosensitive sites, wherein a portion of the charge generated in response to light is collected in the pixel; and a subcollector of a second conductivity spanning the image area that collects another portion of the generated charge that would have otherwise diffused to adjacent photosensitive sites.
摘要翻译：图像传感器包括具有多个感光位置的图像区域的第一导电类型的衬底，其中响应于光产生的电荷的一部分被收集在像素中; 以及横跨图像区域的第二电导率的子集电极，其收集另外将产生的电荷的另一部分，否则其将扩散到相邻的光敏部位。

2. 发明授权

US07095066B2 Process for making a CMOS image sensor 有权
公开(公告)号：US07095066B2
公开(公告)日：2006-08-22
申请号：US10753246
申请日：2004-01-08
申请人： James P. Lavine
发明人： James P. Lavine
IPC分类号： H01L31/062
CPC分类号： H01L27/14687 , H01L27/14632
摘要： An image sensor includes a semi-conducting substrate having a photo-sensitive region and doping for forming a path to a charge-to-voltage mechanism; a dielectric spanning the substrate; and a semi-conducting layer, which is less than approximately 1 micrometer, spanning the dielectric which contains electrodes and circuit elements that control flow of charge.

3. 发明授权

US5583071A Image sensor with improved output region for superior charge transfer characteristics 失效
公开(公告)号：US5583071A
公开(公告)日：1996-12-10
申请号：US489599
申请日：1995-06-12
申请人： Eric G. Stevens , James P. Lavine
发明人： Eric G. Stevens , James P. Lavine
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H01L29/768 , H04N5/372 , H04N5/378 , H01L27/14
CPC分类号： H01L29/76816 , H01L27/14831
摘要： The new CCD output region provides a method of reducing the width of a wide CCD at its output to maintain a high sensitivity output node without sacrificing charge-transfer efficiency. A barrier region is shaped so the "channel width" of the CCD increases towards the input edge of the output gate. The barrier region, therefore, decreases in width towards the output end of the final CCD phase of a multi-phase device. Also, the channel width under the output gate decreases towards its output end in the direction of charge transfer towards the floating diffusion, or detection node. Since the "shaped" portion of the barrier region under the last CCD phase can be formed by the same process steps as the regular-shaped barrier regions, it is possible to form this structure without the requirement for additional masking and implant steps. The advantages of this structure over the prior art are improved charge-transfer characteristics without requiring additional process steps.

4. 发明授权

US5514886A Image sensor with improved output region for superior charge transfer characteristics 失效
标题翻译：图像传感器具有改进的输出区域，具有出色的电荷转移特性
公开(公告)号：US5514886A
公开(公告)日：1996-05-07
申请号：US374280
申请日：1995-01-18
申请人： Eric G. Stevens , James P. Lavine
发明人： Eric G. Stevens , James P. Lavine
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H01L29/768 , H04N5/372 , H04N5/378
CPC分类号： H01L29/76816 , H01L27/14831
摘要： The new CCD output region provides a method of reducing the width of a wide CCD at its output to maintain a high sensitivity output node without sacrificing charge-transfer efficiency. A barrier region is shaped so the "channel width" of the CCD increases towards the input edge of the output gate. The barrier region, therefore, decreases in width towards the output end of the final CCD phase of a multi-phase device. Also, the channel width under the output gate decreases towards its output end in the direction of charge transfer towards the floating diffusion, or detection node. Since the "shaped" portion of the barrier region under the last CCD phase can be formed by the same process steps as the regular-shaped barrier regions, it is possible to form this structure without the requirement for additional masking and implant steps. The advantages of this structure over the prior art are improved charge-transfer characteristics without requiring additional process steps.
摘要翻译：新的CCD输出区域提供了在其输出端减小宽CCD的宽度以维持高灵敏度输出节点而不牺牲电荷传输效率的方法。阻挡区域的形状使得CCD的“通道宽度”朝向输出门的输入边缘增加。因此，阻挡区域的宽度朝向多相设备的最终CCD相的输出端减小。此外，输出栅极下的沟道宽度朝向浮动扩散或检测节点的电荷转移方向朝向其输出端减小。由于最后CCD相位下的阻挡区域的“成形”部分可以通过与正常形状的阻挡区域相同的工艺步骤形成，所以可以形成这种结构，而不需要额外的掩模和注入步骤。与现有技术相比，该结构的优点是改进的电荷转移特性，而不需要额外的工艺步骤。

5. 发明申请

US20080138926A1 TWO EPITAXIAL LAYERS TO REDUCE CROSSTALK IN AN IMAGE SENSOR 审中-公开
标题翻译：两个外延层，以减少图像传感器中的CROSSTALK
公开(公告)号：US20080138926A1
公开(公告)日：2008-06-12
申请号：US11686540
申请日：2007-03-15
申请人： James P. Lavine , Eric G. Stevens
发明人： James P. Lavine , Eric G. Stevens
IPC分类号： H01L21/00
CPC分类号： H01L27/14654 , H01L27/14632 , H01L27/14687
摘要： An image sensor includes a substrate of a first conductivity type having an image area with a plurality of photosensitive sites, wherein a portion of the charge generated in response to light is collected in the pixel; and a subcollector of a second conductivity spanning the image area that collects another portion of the generated charge that would have otherwise diffused to adjacent photosensitive sites.
摘要翻译：图像传感器包括具有多个感光位置的图像区域的第一导电类型的衬底，其中响应于光产生的电荷的一部分被收集在像素中; 以及横跨图像区域的第二电导率的子集电极，其收集另外将产生的电荷的另一部分，否则其将扩散到相邻的光敏部位。

6. 发明授权

US06351001B1 CCD image sensor 失效
标题翻译： CCD图像传感器
公开(公告)号：US06351001B1
公开(公告)日：2002-02-26
申请号：US08633598
申请日：1996-04-17
申请人： Eric G. Stevens , James P. Lavine , Charles V. Stancampiano
发明人： Eric G. Stevens , James P. Lavine , Charles V. Stancampiano
IPC分类号： H01L27148
CPC分类号： H01L27/14843 , H01L27/14806 , H01L27/14887
摘要： A charge-coupled device (CCD) image sensor that preserves defect gettering characteristics having a vertical overflow drain (VOD) for blooming protection is provided in a structure that provides low voltage electronic shuttering. This structure reduces the electronic shutter voltage to ease the demands on off-chip support circuitry required to operate the CCD image sensor. The invention provides an improved pixel structure to reduce this voltage. Prior art difficulties are avoided by providing uniform, n-type layers of varying doping levels underneath the entire area of the CCD device. Combined with a lightly doped n-type substrate these layers provide low voltage electronic shutter operation.
摘要翻译：在提供低电压电子快门的结构中提供了一种保持具有用于防晕保护的垂直溢流漏极（VOD）的缺陷吸除特性的电荷耦合器件（CCD）图像传感器。该结构减少了电子快门电压，以便减少操作CCD图像传感器所需的片外支持电路的需求。本发明提供了一种改进的像素结构来降低该电压。通过在CCD器件的整个区域下方提供均匀的具有不同掺杂水平的n型层来避免现有技术的困难。结合轻掺杂的n型衬底，这些层提供低电压电子快门操作。

7. 发明授权

US06306676B1 Method of making self-aligned, high-enegry implanted photodiode for solid-state image sensors 失效
标题翻译：制造用于固态图像传感器的自对准高掺杂光电二极管的方法
公开(公告)号：US06306676B1
公开(公告)日：2001-10-23
申请号：US08628063
申请日：1996-04-04
申请人： Eric G. Stevens , Stephen L. Kosman , David L. Losee , James P. Lavine
发明人： Eric G. Stevens , Stephen L. Kosman , David L. Losee , James P. Lavine
IPC分类号： H01L2100
CPC分类号： H01L27/14812 , H01L27/14683 , H01L27/14843
摘要： A method and apparatus of making high energy implanted photodiode that is self aligned with the transfer gate, the high energy implant is defined by providing a substrate, or well, of a first conductivity type, defining a charge coupled device within the substrate, or well, such that gate electrode layers are allowed to exist over areas to contain photodiodes during construction of the charge coupled device, patterning a masking layer to block high energy implants such that openings in the masking layer are formed over the areas of the photodiodes, anisotropically etching down through the gate electrode over the photodiodes to the gate dielectric material, implanting photodiodes with high-energy ions of a second conductivity type opposite the first conductivity type and creating a pinned photodiode by employing a shallow implant of the first conductivity type. The apparatus made by this method yields a photodiode employing high energy ions to form the P/N junction that is self aligned with the transfer gate.
摘要翻译：一种制造与传输栅极自对准的高能量注入光电二极管的方法和装置，高能量注入是通过提供第一导电类型的衬底或阱来限定的，该衬底或阱限定衬底或阱内的电荷耦合器件，使得栅极电极层在电荷耦合器件的构造期间允许存在于包含光电二极管的区域上，构图掩模层以阻挡高能量注入，使得掩模层中的开口形成在光电二极管的区域上，各向异性蚀刻向下通过光电二极管上的栅电极到栅介电材料，用与第一导电类型相反的第二导电类型的高能离子注入光电二极管，并通过采用第一导电类型的浅埋入物产生钉扎光电二极管。通过该方法制造的装置产生使用高能离子的光电二极管，以形成与传输门自对准的P / N结。

8. 发明授权

US5726080A Method of performing edge-aligned implants 失效
标题翻译：执行边缘对齐植入物的方法
公开(公告)号：US5726080A
公开(公告)日：1998-03-10
申请号：US757715
申请日：1996-11-26
申请人： David L. Losee , James P. Lavine , Gilbert A. Hawkins , Mary R. Suchanski
发明人： David L. Losee , James P. Lavine , Gilbert A. Hawkins , Mary R. Suchanski
IPC分类号： H01L21/339 , H01L21/265 , H01L21/70 , H01L27/00
CPC分类号： H01L29/66954
摘要： A methodology for producing an edge aligned implant beneath an electrode with reduced lateral spread, comprising the steps of: providing a dielectric layer on a substrate; forming an etch-stop layer on the dielectric layer; forming a sacrificial material layer on the etch-stop layer; patterning the sacrificial layer with openings to expose the etch-stop layer and which openings corresponding to gate electrode positions; implanting dopant atoms through the opening into the substrate in regions adjacent to at least one edge of the opening in the sacrificial layer; depositing electrode material into the openings and onto the sacrificial layer; forming an electrode layer, either by itself of with another layer deposited or grown over it to allow alteration to provide an etch rate differential. The material that etches relatively slowly becomes or protects the gate electrode region. The alteration is done by a process such as diffusion or irradiation.
摘要翻译：一种用于在具有减小的横向扩展的电极下方产生边缘对准植入物的方法，包括以下步骤：在基底上提供介电层; 在所述电介质层上形成蚀刻停止层; 在所述蚀刻停止层上形成牺牲材料层; 用开口图案化牺牲层以暴露蚀刻停止层以及对应于栅电极位置的哪些开口; 在与所述牺牲层中的所述开口的至少一个边缘相邻的区域中将掺杂剂原子通过所述开口注入到所述衬底中; 将电极材料沉积到所述开口中并到达所述牺牲层上; 形成电极层，或者通过其上沉积或生长在其上的另一层本身，以允许改变以提供蚀刻速率差。蚀刻相对缓慢的材料变成或保护栅电极区域。改变是通过扩散或照射等过程完成的。

9. 发明授权

US5448089A Charge-coupled device having an improved charge-transfer efficiency over a broad temperature range 失效
标题翻译：电荷耦合器件在宽温度范围内具有改善的电荷转移效率
公开(公告)号：US5448089A
公开(公告)日：1995-09-05
申请号：US219758
申请日：1994-03-29
申请人： Edmund K. Banghart , Edward T. Nelson , William F. DesJardin , James P. Lavine , Bruce C. Burkey
发明人： Edmund K. Banghart , Edward T. Nelson , William F. DesJardin , James P. Lavine , Bruce C. Burkey
IPC分类号： H01L29/762 , H01L21/339 , H01L27/148 , H01L29/10 , H01L29/78 , H01L27/14 , H01L31/00
CPC分类号： H01L29/1062 , H01L27/14831
摘要： A charge-coupled device having an improved charge-transfer efficiency over a broad temperature range. The device comprises a substrate of semiconductor material of one conductivity type; a first buried channel formed in the substrate and of a conductivity type opposite to that of the substrate; a second buried channel of a conductivity type opposite to that of the substrate formed in the same region of the substrate as the first buried channel and having a greater depth of penetration into the substrate than the first buried channel; compensated regions formed at intervals in the buried channels providing a means for containing individual packets of charge and shaped for inducing a narrow channel effect and for producing a fringing electric field in a direction of charge transfer in uncompensated buried channel regions; electrode gates associated with each pair of adjoining compensated and uncompensated regions in the device; and means for clocking the electrodes for causing a string of charge packets to be transferred through the device.
摘要翻译：一种电荷耦合器件，其在宽温度范围内具有改善的电荷转移效率。该器件包括一种导电类型的半导体材料的衬底; 形成在所述基板中并且与所述基板相反的导电类型的第一埋入通道; 导电类型的第二掩埋沟道，其形成在与所述第一掩埋沟道相同的衬底区域中，并且比所述第一掩埋沟道具有比所述衬底更大的穿透深度; 在掩埋沟道中间隔地形成的补偿区域提供了一种用于容纳单独的电荷包并且被成形为用于诱导窄通道效应并用于在未补偿的掩埋沟道区域中的电荷转移方向上产生边缘电场的装置; 与设备中的每对相邻补偿和未补偿区域相关联的电极门; 以及用于使电极计时以使一串电荷包通过该装置传送的装置。

10. 发明申请

US20090035888A1 TWO EPITAXIAL LAYERS TO REDUCE CROSSTALK IN AN IMAGE SENSOR 有权
标题翻译：两个外延层，以减少图像传感器中的CROSSTALK
公开(公告)号：US20090035888A1
公开(公告)日：2009-02-05
申请号：US12247248
申请日：2008-10-08
申请人： James P. Lavine , Eric G. Stevens
发明人： James P. Lavine , Eric G. Stevens
IPC分类号： H01L21/00 , H01L27/00
CPC分类号： H01L27/14654 , H01L27/14632 , H01L27/14687
摘要： An image sensor includes a substrate of a first conductivity type having an image area with a plurality of photosensitive sites, wherein a portion of the charge generated in response to light is collected in the pixel; and a subcollector of a second conductivity spanning the image area that collects another portion of the generated charge that would have otherwise diffused to adjacent photosensitive sites.
摘要翻译：图像传感器包括具有多个感光位置的图像区域的第一导电类型的衬底，其中响应于光产生的电荷的一部分被收集在像素中; 以及横跨图像区域的第二电导率的子集电极，其收集另外将产生的电荷的另一部分，否则其将扩散到相邻的光敏部位。

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