会员体验
专利管家（专利管理）
工作空间（专利管理）
风险监控（情报监控）
数据分析（专利分析）
侵权分析（诉讼无效）
联系我们
交流群
官方交流：
QQ群： 891211   
微信请扫码    >>>
现在联系顾问~
下载
著录项
PDF全文
热词
    • 2. 发明授权
      US5726080A Method of performing edge-aligned implants 失效
    • Method of performing edge-aligned implants
    • 执行边缘对齐植入物的方法
    • US5726080A
    • 1998-03-10
    • US757715
    • 1996-11-26
    • David L. Losee , James P. Lavine , Gilbert A. Hawkins , Mary R. Suchanski
    • David L. Losee , James P. Lavine , Gilbert A. Hawkins , Mary R. Suchanski
    • H01L21/339 , H01L21/265 , H01L21/70 , H01L27/00
    • H01L29/66954
    • A methodology for producing an edge aligned implant beneath an electrode with reduced lateral spread, comprising the steps of: providing a dielectric layer on a substrate; forming an etch-stop layer on the dielectric layer; forming a sacrificial material layer on the etch-stop layer; patterning the sacrificial layer with openings to expose the etch-stop layer and which openings corresponding to gate electrode positions; implanting dopant atoms through the opening into the substrate in regions adjacent to at least one edge of the opening in the sacrificial layer; depositing electrode material into the openings and onto the sacrificial layer; forming an electrode layer, either by itself of with another layer deposited or grown over it to allow alteration to provide an etch rate differential. The material that etches relatively slowly becomes or protects the gate electrode region. The alteration is done by a process such as diffusion or irradiation.
    • 一种用于在具有减小的横向扩展的电极下方产生边缘对准植入物的方法，包括以下步骤：在基底上提供介电层; 在所述电介质层上形成蚀刻停止层; 在所述蚀刻停止层上形成牺牲材料层; 用开口图案化牺牲层以暴露蚀刻停止层以及对应于栅电极位置的哪些开口; 在与所述牺牲层中的所述开口的至少一个边缘相邻的区域中将掺杂剂原子通过所述开口注入到所述衬底中; 将电极材料沉积到所述开口中并到达所述牺牲层上; 形成电极层，或者通过其上沉积或生长在其上的另一层本身，以允许改变以提供蚀刻速率差。 蚀刻相对缓慢的材料变成或保护栅电极区域。 改变是通过扩散或照射等过程完成的。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 3. 发明授权
      US5516716A Method of making a charge coupled device with edge aligned implants and electrodes 失效
    • Method of making a charge coupled device with edge aligned implants and electrodes
    • 制造具有边缘对准植入物和电极的电荷耦合器件的方法
    • US5516716A
    • 1996-05-14
    • US349120
    • 1994-12-02
    • Gilbert A. Hawkins , David L. Losee
    • Gilbert A. Hawkins , David L. Losee
    • H01L29/762 , H01L21/339 , H01L29/423
    • H01L29/66954 , H01L29/42396
    • A fully self-aligned, charge coupled device (CCD) comprises a semiconductor substrate having implanted barrier and/or storage regions, an insulating dielectric layer disposed over the substrate, a first layer of closely spaced electrodes in self-alignment with at least one implant underneath the first electrodes, a second layer of closely spaced electrodes in self-alignment with the first electrodes and with at least one implant underneath the second electrodes also in self-alignment with the first electrodes. The process for fabricating the fully self-aligned CCD comprises the steps of first forming upon the semiconductive substrate, a uniform insulating dielectric layer; then forming a sacrificial layer upon the dielectric layer, the sacrificial layer patterned by removal of selected portions of the layer, at least one edge of the patterned sacrificial layer serving as a mask for ion implantation into the semiconductor substrate, the mask optionally comprising also photoresist; then forming in only those regions in which the sacrificial layer was removed, a first gate electrode; then removing the sacrificial layer, thereby exposing the sidewalls of the closely spaced first gate electrode, at least one of the sidewalls serving as a mask for a second ion implantation into the semiconductor substrate, the mask optionally comprising also photoresist; then forming a first oxide layer over the exposed surface of the first gate electrode; then depositing and patterning a second gate electrode layer to form a second gate electrode disposed between portions of the first gate electrode.
    • 完全自对准的电荷耦合器件（CCD）包括具有植入的势垒和/或存储区域的半导体衬底，设置在衬底上的绝缘介电层，与至少一个植入物自对准的紧密间隔的电极的第一层 在第一电极下面，与第一电极自对准的第二层紧密间隔的电极，以及与第一电极自对准的第二电极下方的至少一个植入物。 制造完全自对准CCD的工艺包括以下步骤：首先在半导体衬底上形成均匀的绝缘介电层; 然后在介电层上形成牺牲层，通过去除该层的选定部分图案化牺牲层，图案化牺牲层的至少一个边缘用作用于离子注入到半导体衬底中的掩模，掩模任选地还包括光致抗蚀剂 ; 然后仅形成除去牺牲层的那些区域，第一栅电极; 然后去除牺牲层，从而暴露紧密间隔的第一栅电极的侧壁，至少一个侧壁用作第二离子注入到半导体衬底中的掩模，掩模可选地还包括光致抗蚀剂; 然后在所述第一栅极的暴露表面上形成第一氧化物层; 然后沉积和构图第二栅极电极层以形成设置在第一栅电极的部分之间的第二栅电极。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 4. 发明授权
      US5641700A Charge coupled device with edge aligned implants and electrodes 失效
    • Charge coupled device with edge aligned implants and electrodes
    • 电荷耦合器件具有边缘对准的植入物和电极
    • US5641700A
    • 1997-06-24
    • US558629
    • 1995-11-14
    • Gilbert A. Hawkins , David L. Losee
    • Gilbert A. Hawkins , David L. Losee
    • H01L29/762 , H01L21/339 , H01L29/423 , H01L21/265 , H01L21/70 , H01L27/00
    • H01L29/66954 , H01L29/42396
    • A fully self-aligned, charge coupled device (CCD) comprises a semiconductor substrate having implanted barrier and/or storage regions, an insulating dielectric layer disposed over the substrate, a first layer of closely spaced electrodes in self-alignment with at least one implant underneath the first electrodes, a second layer of closely spaced electrodes in self-alignment with the first electrodes and with at least one implant underneath the second electrodes also in self-alignment with the first electrodes. The process for fabricating the fully self-aligned CCD comprises the steps of first forming upon the semiconductive substrate, a uniform insulating dielectric layer; then forming a sacrificial layer upon the dielectric layer, the sacrificial layer patterned by removal of selected portions of the layer, at least one edge of the patterned sacrificial layer serving as a mask for ion implantation into the semiconductor substrate, the mask optionally comprising also photoresist; then forming in only those regions in which the sacrificial layer was removed, a first gate electrode; then removing the sacrificial layer, thereby exposing the sidewalls of the closely spaced first gate electrode, at least one of the sidewalls serving as a mask for a second ion implantation into the semiconductor substrate, the mask optionally comprising also photoresist; then forming a first oxide layer over the exposed surface of the first gate electrode; then depositing and patterning a second gate electrode layer to form a second gate electrode disposed between portions of the first gate electrode.
    • 完全自对准的电荷耦合器件（CCD）包括具有植入的势垒和/或存储区域的半导体衬底，设置在衬底上的绝缘介电层，与至少一个植入物自对准的紧密间隔的电极的第一层 在第一电极下面，与第一电极自对准的第二层紧密间隔的电极，以及与第一电极自对准的第二电极下方的至少一个植入物。 制造完全自对准CCD的工艺包括以下步骤：首先在半导体衬底上形成均匀的绝缘介电层; 然后在介电层上形成牺牲层，通过去除该层的选定部分图案化牺牲层，图案化牺牲层的至少一个边缘用作用于离子注入到半导体衬底中的掩模，掩模任选地还包括光致抗蚀剂 ; 然后仅形成除去牺牲层的那些区域，第一栅电极; 然后去除牺牲层，从而暴露紧密间隔的第一栅电极的侧壁，至少一个侧壁用作第二离子注入到半导体衬底中的掩模，掩模可选地还包括光致抗蚀剂; 然后在所述第一栅极的暴露表面上形成第一氧化物层; 然后沉积和构图第二栅极电极层以形成设置在第一栅电极的部分之间的第二栅电极。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 5. 发明授权
      US5460997A Method of making a confined planar charge coupled device with edge aligned implants and interconnected electrodes 失效
    • Method of making a confined planar charge coupled device with edge aligned implants and interconnected electrodes
    • 制造具有边缘对准植入物和互连电极的有限平面电荷耦合器件的方法
    • US5460997A
    • 1995-10-24
    • US376994
    • 1995-01-23
    • Gilbert A. Hawkins , Robert L. Nielsen
    • Gilbert A. Hawkins , Robert L. Nielsen
    • H01L27/148 , H01L21/339 , H01L29/762
    • H01L29/66954 , Y10S148/05
    • A method of making a fully self-aligned, planar, two phase charge coupled device comprises the steps of first forming upon a semiconductive substrate a uniform first insulative dielectric layer; then depositing and patterning in the form of a trench extending to the first insulative layer a second insulative layer; then implanting ions of a second conductivity type into the substrate, then patterning closely spaced strips of a first conductive layer on the first and second insulative layer, then further implanting ions of a second conductivity type in the regions between said first conductive strips, then depositing uniformly a second conductive layer electrically isolated from the first conductive strips, then entirely removing by uniform planarization those portions of the second conductive layer disposed over regions of the first conductive strips or over regions of the second insulative layer so as to form closely spaced, coplanar, alternating first and second electrically isolated conductive strips, then electrically connecting alternate pairs of strips by a planar process of depositing and oxidizing a conductive material, then removing portions of the second insulative layer.
    • 制造完全自对准的平面的两相电荷耦合器件的方法包括以下步骤：首先在半导体衬底上形成均匀的第一绝缘介电层; 然后以延伸到第一绝缘层的沟槽的形式沉积和图案化第二绝缘层; 然后将第二导电类型的离子注入衬底中，然后对第一和第二绝缘层上的第一导电层的紧密间隔的条纹进行图案化，然后在第一导电条之间的区域中进一步注入第二导电类型的离子，然后沉积 均匀地形成与第一导电条电隔离的第二导电层，然后通过均匀的平面化完全去除设置在第一导电条的区域上的第二导电层的部分或第二绝缘层的区域上的部分，以便形成紧密间隔的共面 交替的第一和第二电绝缘导电条，然后通过沉积和氧化导电材料的平面过程电连接替代的条带对，然后去除第二绝缘层的部分。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 6. 发明授权
      US5556801A Method of making a planar charge coupled device with edge aligned implants and interconnected electrodes 失效
    • Method of making a planar charge coupled device with edge aligned implants and interconnected electrodes
    • 制造具有边缘对准植入物和互连电极的平面电荷耦合器件的方法
    • US5556801A
    • 1996-09-17
    • US376699
    • 1995-01-23
    • Gilbert A. Hawkins , Robert L. Nielsen
    • Gilbert A. Hawkins , Robert L. Nielsen
    • H01L27/148 , H01L21/339 , H01L29/10 , H01L29/762 , H01L29/768 , H01L21/265 , H01L21/70 , H01L27/00
    • H01L29/66954 , H01L29/1062 , H01L29/76875
    • A method of making a fully self-aligned, planar, two phase charge coupled device comprises the steps of first forming upon a semiconductive substrate a uniform insulative layer; then implanting ions of a second conductivity type into the substrate, then patterning closely spaced strips of a first conductive layer on the insulative layer, then further implanting ions of a second conductivity type in the regions between said first conductive strips, then depositing uniformly a second conductive layer electrically isolated from the first conductive strips, then entirely removing by uniform planarization those portions of the second conductive layer disposed over regions of the first conductive strips so as to form closely spaced, coplanar, alternating first and second electrically isolated conductive strips, then electrically connecting alternate pairs of strips by a planar process of depositing and oxidizing a conductive material.
    • 制造完全自对准的平面两相电荷耦合器件的方法包括以下步骤：首先在半导体衬底上形成均匀的绝缘层; 然后将第二导电类型的离子注入到衬底中，然后对绝缘层上的第一导电层的紧密间隔的条纹进行图案化，然后在第一导电条之间的区域中进一步注入第二导电类型的离子， 导电层与第一导电带电隔离，然后通过均匀平坦化完全去除设置在第一导电条的区域上的第二导电层的那些部分，以便形成紧密间隔开的共面交替的第一和第二电绝缘导电条，然后 通过沉积和氧化导电材料的平面过程电连接交替的条带对。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 8. 发明申请
      US20100259586A1 DEVICE FOR MERGING FLUID DROPS OR JETS 有权
    • DEVICE FOR MERGING FLUID DROPS OR JETS
    • 装配流体液体或喷嘴的装置
    • US20100259586A1
    • 2010-10-14
    • US12420846
    • 2009-04-09
    • Gilbert A. Hawkins , Zhanjun Gao , Yonglin Xie , Edward P. Furlani , Kam C. Ng
    • Gilbert A. Hawkins , Zhanjun Gao , Yonglin Xie , Edward P. Furlani , Kam C. Ng
    • B41J2/09
    • B41J2/07 , B41J2/09 , B41J2/095
    • A device and method of controlling fluid flow are provided. The method includes providing a moving fluid including a fluid flow characteristic; providing a fluid control device including a fluid control surface, the fluid control surface including a pattern; causing the fluid to contact the fluid control surface of the fluid control device; and causing the fluid to interact with the fluid control surface of the fluid control device using the pattern of the fluid control surface that, when activated, causes adjacent fluid drops to merge or coalesce while the fluid is in contact with the pattern of the fluid control device such that the fluid flow characteristic of the fluid after interacting with the fluid control surface of the fluid control device is different from the fluid flow characteristic of the fluid before interaction with the fluid control surface of the fluid control device.
    • 提供了一种控制流体流动的装置和方法。 该方法包括提供包括流体流动特征的移动流体; 提供包括流体控制表面的流体控制装置，所述流体控制表面包括图案; 使流体接触流体控制装置的流体控制表面; 并且使用流体控制表面的图案使流体与流体控制装置的流体控制表面相互作用，当流体控制表面被激活时，当流体与流体控制的图案接触时，相邻的流体液滴合并或聚结 装置，使得与流体控制装置的流体控制表面相互作用之后的流体的流体流动特性不同于在与流体控制装置的流体控制表面相互作用之前的流体的流体流动特性。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
每页展示10个专利
每页展示10个专利
每页展示20个专利
每页展示50个专利
每页展示100个专利

IPRDB

最新中国发明专利 最新美国发明专利 技术领域 专利库 专利分类库 国际专利分类库

热门服务

会员版试用 API 数据接口 找代理 知嘟嘟专利交易 排行榜 大学排行榜 专利百科

关于我们

平台介绍 战略合作 网站地图

友情链接

知嘟嘟专利交易 国家知识产权局 中国商标网

联系方式


©2019-2023 上海吉码数字技术有限公司 版权所有，并保留所有权利 沪ICP备20016256号-6 沪公网安备31011702005475号