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    • 1. 发明授权
    • EUV lithography reticles fabricated without the use of a patterned absorber
    • 在不使用图案化吸收体的情况下制造EUV光刻掩模版
    • US07049033B2
    • 2006-05-23
    • US10631359
    • 2003-07-31
    • Daniel G. StearnsDonald W. SweeneyPaul B. Mirkarimi
    • Daniel G. StearnsDonald W. SweeneyPaul B. Mirkarimi
    • G03F9/00A61N5/00G03B27/00
    • G03F1/34B82Y10/00B82Y40/00G03F1/24
    • Absorber material used in conventional EUVL reticles is eliminated by introducing a direct modulation in the complex-valued reflectance of the multilayer. A spatially localized energy source such as a focused electron or ion beam directly writes a reticle pattern onto the reflective multilayer coating. Interdiffusion is activated within the film by an energy source that causes the multilayer period to contract in the exposed regions. The contraction is accurately determined by the energy dose. A controllable variation in the phase and amplitude of the reflected field in the reticle plane is produced by the spatial modulation of the multilayer period. This method for patterning an EUVL reticle has the advantages (1) avoiding the process steps associated with depositing and patterning an absorber layer and (2) providing control of the phase and amplitude of the reflected field with high spatial resolution.
    • 通过在多层复数值的反射率中引入直接调制来消除用于常规EUVL标线的吸收材料。 诸如聚焦电子或离子束的空间局部化能源直接将掩模版图案写到反射多层涂层上。 相互扩散在膜内被能量源激活,导致多层周期在暴露区域中收缩。 收缩准确地由能量剂量确定。 通过多层周期的空间调制产生光罩平面中反射场的相位和幅度的可控变化。 用于图案化EUVL掩模版的方法具有以下优点:(1)避免与沉积和图案化吸收层相关的工艺步骤,以及(2)以高空间分辨率提供对反射场的相位和幅度的控制。
    • 5. 发明授权
    • Repair of localized defects in multilayer-coated reticle blanks for extreme ultraviolet lithography
    • 修复用于极紫外光刻的多层涂层掩模版坯料中的局部缺陷
    • US06821682B1
    • 2004-11-23
    • US09669390
    • 2000-09-26
    • Daniel G. StearnsDonald W. SweeneyPaul B. Mirkarimi
    • Daniel G. StearnsDonald W. SweeneyPaul B. Mirkarimi
    • G03F900
    • G02B5/285B82Y10/00B82Y40/00G02B5/0891G02B27/32G03F1/24G03F1/72G21K1/062G21K2201/067
    • A method is provided for repairing defects in a multilayer coating layered onto a reticle blank used in an extreme ultraviolet lithography (EUVL) system. Using high lateral spatial resolution, energy is deposited in the multilayer coating in the vicinity of the defect. This can be accomplished using a focused electron beam, focused ion beam or a focused electromagnetic radiation. The absorbed energy will cause a structural modification of the film, producing a localized change in the film thickness. The change in film thickness can be controlled with sub-nanometer accuracy by adjusting the energy dose. The lateral spatial resolution of the thickness modification is controlled by the localization of the energy deposition. The film thickness is adjusted locally to correct the perturbation of the reflected field. For example, when the structural modification is a localized film contraction, the repair of a defect consists of flattening a mound or spreading out the sides of a depression.
    • 提供了一种用于修复分层到用于极紫外光刻(EUVL)系统的掩模版坯料上的多层涂层中的缺陷的方法。 使用高横向空间分辨率,能量沉积在缺陷附近的多层涂层中。 这可以使用聚焦电子束,聚焦离子束或聚焦电磁辐射来实现。 吸收的能量将导致膜的结构改性,产生膜厚度的局部变化。 通过调节能量剂量可以以亚纳米精度控制膜厚的变化。 厚度变化的横向空间分辨率由能量沉积的定位来控制。 局部调整膜厚以校正反射场的扰动。 例如,当结构改性是局部薄膜收缩时,缺陷的修复包括使平坦化的墩或扩展凹陷的侧面。
    • 7. 发明授权
    • Optical ranked-order filtering using threshold decomposition
    • 使用阈值分解进行光学排序顺序滤波
    • US4949389A
    • 1990-08-14
    • US106295
    • 1987-10-09
    • Jan P. AllebachEllen OchoaDonald W. Sweeney
    • Jan P. AllebachEllen OchoaDonald W. Sweeney
    • G06E3/00G06K9/58
    • G06E3/00G06K9/58G03H1/0808G03H1/0841G03H2001/0066
    • A hybrid optical/electronic system performs median filtering and related ranked-order operations using threshold decomposition to encode the image. Threshold decomposition transforms the nonlinear neighborhood ranking operation into a linear space-invariant filtering step followed by a point-to-point threshold comparison step. Spatial multiplexing allows parallel processing of all the threshold components as well as recombination by a second linear, space-invariant filtering step. An incoherent optical correlation system performs the linear filtering, using a magneto-optic spatial light modulator as the input device and a computer-generated hologram in the filter plane. Thresholding is done electronically. By adjusting the value of the threshold, the same architecture is used to perform median, minimum, and maximum filtering of images. A totally optical system is also disclosed.
    • 混合光学/电子系统使用阈值分解来执行中值滤波和相关的排序次序操作以对图像进行编码。 阈值分解将非线性邻域排序操作转换为线性空间不变滤波步骤,接着是点对点阈值比较步骤。 空间复用允许所有阈值分量的并行处理以及通过第二线性,空间不变滤波步骤的复合。 非相干光学相关系统使用磁光空间光调制器作为输入设备和在滤波器平面中的计算机生成的全息图进行线性滤波。 阈值是以电子方式完成的。 通过调整阈值的值,使用相同的架构来执行图像的中值,最小和最大滤波。 还公开了一种全光学系统。
    • 10. 发明授权
    • Extreme-UV lithography condenser
    • 极紫外光刻冷凝器
    • US06210865B1
    • 2001-04-03
    • US09249738
    • 1999-02-11
    • William C. SweattDonald W. SweeneyDavid ShaferJames McGuire
    • William C. SweattDonald W. SweeneyDavid ShaferJames McGuire
    • G03C500
    • G03F7/70066G03F7/70158G03F7/702G21K1/06Y10S430/167
    • Condenser system for use with a ringfield camera in projection lithography where the condenser includes a series of segments of a parent aspheric mirror having one foci at a quasi-point source of radiation and the other foci at the radius of a ringfield have all but one or all of their beams translated and rotated by sets of mirrors such that all of the beams pass through the real entrance pupil of a ringfield camera about one of the beams and fall onto the ringfield radius as a coincident image as an arc of the ringfield. The condenser has a set of correcting mirrors with one of the correcting mirrors of each set, or a mirror that is common to said sets of mirrors, from which the radiation emanates, is a concave mirror that is positioned to shape a beam segment having a chord angle of about 25 to 85 degrees into a second beam segment having a chord angle of about 0 to 60 degrees.
    • 用于投影光刻中的环形相机的冷凝器系统,其中电容器包括具有在准点辐射源处的一个焦点的父非球面反射镜的一系列段,并且在环形场的半径处具有另一个焦点,除了一个或 它们的所有光束通过一组镜子平移和旋转,使得所有的光束通过围绕其中一个光束的环形相机的真实入射光瞳,并且作为环形圆弧的重合图像落入环形半径。 冷凝器具有一组校正镜,每组具有校准镜之一,或者是所述反射镜组共同的反射镜,辐射从该反射镜发射出来,该凹面镜定位成使具有 具有大约25至85度的弦角到具有约0至60度的弦角的第二光束段中。