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1. 发明授权

US07049033B2 EUV lithography reticles fabricated without the use of a patterned absorber 有权
标题翻译：在不使用图案化吸收体的情况下制造EUV光刻掩模版
公开(公告)号：US07049033B2
公开(公告)日：2006-05-23
申请号：US10631359
申请日：2003-07-31
申请人： Daniel G. Stearns , Donald W. Sweeney , Paul B. Mirkarimi
发明人： Daniel G. Stearns , Donald W. Sweeney , Paul B. Mirkarimi
IPC分类号： G03F9/00 , A61N5/00 , G03B27/00
CPC分类号： G03F1/34 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： Absorber material used in conventional EUVL reticles is eliminated by introducing a direct modulation in the complex-valued reflectance of the multilayer. A spatially localized energy source such as a focused electron or ion beam directly writes a reticle pattern onto the reflective multilayer coating. Interdiffusion is activated within the film by an energy source that causes the multilayer period to contract in the exposed regions. The contraction is accurately determined by the energy dose. A controllable variation in the phase and amplitude of the reflected field in the reticle plane is produced by the spatial modulation of the multilayer period. This method for patterning an EUVL reticle has the advantages (1) avoiding the process steps associated with depositing and patterning an absorber layer and (2) providing control of the phase and amplitude of the reflected field with high spatial resolution.
摘要翻译：通过在多层复数值的反射率中引入直接调制来消除用于常规EUVL标线的吸收材料。诸如聚焦电子或离子束的空间局部化能源直接将掩模版图案写到反射多层涂层上。相互扩散在膜内被能量源激活，导致多层周期在暴露区域中收缩。收缩准确地由能量剂量确定。通过多层周期的空间调制产生光罩平面中反射场的相位和幅度的可控变化。用于图案化EUVL掩模版的方法具有以下优点：（1）避免与沉积和图案化吸收层相关的工艺步骤，以及（2）以高空间分辨率提供对反射场的相位和幅度的控制。

2. 发明授权

US5986795A Deformable mirror for short wavelength applications 失效
标题翻译：适用于短波长应用的变形镜
公开(公告)号：US5986795A
公开(公告)日：1999-11-16
申请号：US98024
申请日：1998-06-15
申请人： Henry N. Chapman , Donald W. Sweeney
发明人： Henry N. Chapman , Donald W. Sweeney
IPC分类号： G02B26/06 , G03F7/20 , G02B26/08
CPC分类号： G03F7/70233 , G02B26/06 , G03F7/70266
摘要： A deformable mirror compatible with short wavelength (extreme ultraviolet) radiation that can be precisely controlled to nanometer and subnanometer accuracy is described. Actuators are coupled between a reaction plate and a face plate which has a reflective coating. A control system adjusts the voltage supplied to the actuators; by coordinating the voltages supplied to the actuators, the reflective surface of the mirror can be deformed to correct for dimensional errors in the mirror or to produce a desired contour.
摘要翻译：描述了可以精确控制到纳米和亚纳米计精度的短波长（极紫外）辐射兼容的可变形反射镜。致动器耦合在具有反射涂层的反应板和面板之间。控制系统调节供应给致动器的电压; 通过协调提供给致动器的电压，反射镜的反射表面可以变形以校正反射镜中的尺寸误差或产生期望的轮廓。

3. 发明授权

US06635391B2 Method for fabricating reticles for EUV lithography without the use of a patterned absorber 有权
公开(公告)号：US06635391B2
公开(公告)日：2003-10-21
申请号：US09752887
申请日：2000-12-28
申请人： Daniel G. Stearns , Donald W. Sweeney , Paul B. Mirkarimi
发明人： Daniel G. Stearns , Donald W. Sweeney , Paul B. Mirkarimi
IPC分类号： G03F900
CPC分类号： G03F1/34 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： Absorber material used in conventional EUVL reticles is eliminated by introducing a direct modulation in the complex-valued reflectance of the multilayer. A spatially localized energy source such as a focused electron or ion beam directly writes a reticle pattern onto the reflective multilayer coating. Interdiffusion is activated within the film by an energy source that causes the multilayer period to contract in the exposed regions. The contraction is accurately determined by the energy dose. A controllable variation in the phase and amplitude of the reflected field in the reticle plane is produced by the spatial modulation of the multilayer period. This method for patterning an EUVL reticle has the advantages of (1) avoiding the process steps associated with depositing and patterning an absorber layer and (2) providing control of the phase and amplitude of the reflected field with high spatial resolution.

4. 发明授权

US06210865B1 Extreme-UV lithography condenser 有权
标题翻译：极紫外光刻冷凝器
公开(公告)号：US06210865B1
公开(公告)日：2001-04-03
申请号：US09249738
申请日：1999-02-11
申请人： William C. Sweatt , Donald W. Sweeney , David Shafer , James McGuire
发明人： William C. Sweatt , Donald W. Sweeney , David Shafer , James McGuire
IPC分类号： G03C500
CPC分类号： G03F7/70066 , G03F7/70158 , G03F7/702 , G21K1/06 , Y10S430/167
摘要： Condenser system for use with a ringfield camera in projection lithography where the condenser includes a series of segments of a parent aspheric mirror having one foci at a quasi-point source of radiation and the other foci at the radius of a ringfield have all but one or all of their beams translated and rotated by sets of mirrors such that all of the beams pass through the real entrance pupil of a ringfield camera about one of the beams and fall onto the ringfield radius as a coincident image as an arc of the ringfield. The condenser has a set of correcting mirrors with one of the correcting mirrors of each set, or a mirror that is common to said sets of mirrors, from which the radiation emanates, is a concave mirror that is positioned to shape a beam segment having a chord angle of about 25 to 85 degrees into a second beam segment having a chord angle of about 0 to 60 degrees.
摘要翻译：用于投影光刻中的环形相机的冷凝器系统，其中电容器包括具有在准点辐射源处的一个焦点的父非球面反射镜的一系列段，并且在环形场的半径处具有另一个焦点，除了一个或它们的所有光束通过一组镜子平移和旋转，使得所有的光束通过围绕其中一个光束的环形相机的真实入射光瞳，并且作为环形圆弧的重合图像落入环形半径。冷凝器具有一组校正镜，每组具有校准镜之一，或者是所述反射镜组共同的反射镜，辐射从该反射镜发射出来，该凹面镜定位成使具有具有大约25至85度的弦角到具有约0至60度的弦角的第二光束段中。

5. 发明授权

US6031598A Extreme ultraviolet lithography machine 有权
标题翻译：极紫外光刻机
公开(公告)号：US6031598A
公开(公告)日：2000-02-29
申请号：US161353
申请日：1998-09-25
申请人： Daniel A. Tichenor , Glenn D. Kubiak , Steven J. Haney , Donald W. Sweeney
发明人： Daniel A. Tichenor , Glenn D. Kubiak , Steven J. Haney , Donald W. Sweeney
IPC分类号： G03F7/20 , G03B27/54 , G03B27/74
CPC分类号： G03F7/70808 , B82Y10/00 , G03F7/70033 , G03F7/70058 , G03F7/70233 , G03F7/7025 , G03F7/70691 , G03F7/70841 , G03F7/709 , G03F7/70991
摘要： An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.
摘要翻译：用于制造在基板上形成的诸如晶体管的集成电路（IC）部件的极紫外光刻（EUVL）机器或系统。 EUVL机器使用经由光学装置引导的激光等离子体点源到由多镜系统反射到衬底或靶上的掩模或掩模版上。 EUVL机器在10-14nm波长的软x射线光子中工作。基本上，EUV机器包括抽真空的源室，通过传送管装置互连的抽真空的主或投影室，其中激光束被引导到等离子体发生器中，该等离子体发生器产生照明光束，该照明光束由来自光源室的光学器件通过连接管，投射到投影室中并且到达掩模版或掩模上，图案化的光束在安装在主或投影室中的投影光学器件（PO）盒中的光学器件反射到基板上。在EUVL机的一个实施例中，利用了九个光学部件，其中四个光学部件位于PO盒中。主或投影室包括用于PO箱的隔振器和用于衬底的隔振器安装件，其中主或投影室安装在支撑结构上并被隔离。

6. 发明授权

US5973826A Reflective optical imaging system with balanced distortion 失效
标题翻译：具有平衡失真的反射光学成像系统
公开(公告)号：US5973826A
公开(公告)日：1999-10-26
申请号：US27281
申请日：1998-02-20
申请人： Henry N. Chapman , Russell M. Hudyma , David R. Shafer , Donald W. Sweeney
发明人： Henry N. Chapman , Russell M. Hudyma , David R. Shafer , Donald W. Sweeney
IPC分类号： G02B17/06 , G03F7/20 , G02B13/14
CPC分类号： G03F7/70233 , G02B17/0657 , G02B13/22
摘要： An optical system compatible with short wavelength (extreme ultraviolet) An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four reflective elements for projecting a mask image onto a substrate. The four optical elements comprise, in order from object to image, convex, concave, convex and concave mirrors. The optical system is particularly suited for step and scan lithography methods. The invention enables the use of larger slit dimensions associated with ring field scanning optics, improves wafer throughput and allows higher semiconductor device density. The inventive optical system is characterized by reduced dynamic distortion because the static distortion is balanced across the slit width.
摘要翻译：与短波长（极紫外）兼容的光学系统与短波长（极紫外）辐射兼容的光学系统包括用于将掩模图像投影到基板上的四个反射元件。四个光学元件按照从物体到图像的顺序包括凸形，凹形，凸形和凹面镜。光学系统特别适用于步进和扫描光刻方法。本发明使得能够使用与环形场扫描光学元件相关联的更大的狭缝尺寸，提高晶片生产量并允许更高的半导体器件密度。本发明的光学系统的特征在于减小动态失真，因为静态失真在狭缝宽度上是平衡的。

7. 发明授权

US4838644A Position, rotation, and intensity invariant recognizing method 失效
标题翻译：位置，旋转和强度不变识别方法
公开(公告)号：US4838644A
公开(公告)日：1989-06-13
申请号：US96434
申请日：1987-09-15
申请人： Ellen Ochoa , George F. Schils , Donald W. Sweeney
发明人： Ellen Ochoa , George F. Schils , Donald W. Sweeney
IPC分类号： G06E3/00 , G06K9/74
CPC分类号： G06E3/003 , G06K9/74 , Y10S359/90
摘要： A method for recognizing the presence of a particular target in a field of view which is target position, rotation, and intensity invariant includes the preparing of a target-specific invariant filter from a combination of all eigen-modes of a pattern of the particular target. Coherent radiation from the field of view is then imaged into an optical correlator in which the invariant filter is located. The invariant filter is rotated in the frequency plane of the optical correlator in order to produce a constant-amplitude rotational response in a correlation output plane when the particular target is present in the field of view. Any constant response is thus detected in the outputThe U.S. Government has rights in this invention pursuant to Contract No. DE-AC04-76DP00789 between the U.S. Department of Energy and AT&T Technologies, Inc.
摘要翻译：用于识别作为目标位置，旋转和强度不变的视场中的特定目标的存在的方法包括从特定目标的图案的所有特征模式的组合中准备目标特定不变滤波器。然后将来自视野的相干辐射成像为不变滤波器所在的光学相关器。不变滤波器在光学相关器的频率平面中旋转，以便当在视场中存在特定目标时，在相关输出平面中产生恒定幅度旋转响应。因此，在输出平面中检测到任何恒定的响应，以确定特定目标是否存在于视野中。优选地，使用具有多个像素的光学检测器在输出平面中成像时间图案，并且通过累积每个像素的强度和强度平方来确定每个像素的相关系数。过滤器旋转引起的恒定响应的轨道运动也优选地通过使用两个正交的镜来消除，所述两个正交镜相应于过滤器的旋转而枢转，或者将折射楔连接到过滤器以去除偏移角。优选地，以多个任意角度执行在输出平面中的时间模式的检测，其中角度分离足以使连续的帧解相关。

8. 发明授权

US4516743A Scanning beam beamrider missile guidance system 失效
标题翻译：扫射梁光束导弹引导系统
公开(公告)号：US4516743A
公开(公告)日：1985-05-14
申请号：US486127
申请日：1983-04-18
申请人： Donald W. Sweeney , Neal C. Gallagher , Charles R. Christensen
发明人： Donald W. Sweeney , Neal C. Gallagher , Charles R. Christensen
IPC分类号： F41G7/26
CPC分类号： F41G7/26
摘要： A beamrider guidance system for missiles wherein a laser beam is given two circular motions around the boresight axis to produce amplitude and phase modulation on the signal received at the missile. The information on distance from boresight is contained in the amplitude modulation and the angular information is contained as phase modulation. A laser optical system with a spinning holographic element provides one of the circular motions for the beam. The other circular motion is provided by a low frequency, circular scanning mirror.
摘要翻译：用于导弹的光束引导系统，其中激光束被给予围绕视轴的两个圆周运动，以对在导弹上接收的信号产生振幅和相位调制。与视轴距离的信息包含在幅度调制中，并且角度信息被包含为相位调制。具有旋转全息元件的激光光学系统为光束提供圆形运动之一。另一个圆周运动由低频圆形扫描镜提供。

9. 发明授权

US07022435B2 Method for the manufacture of phase shifting masks for EUV lithography 有权
标题翻译：用于制造用于EUV光刻的相移掩模的方法
公开(公告)号：US07022435B2
公开(公告)日：2006-04-04
申请号：US10256454
申请日：2002-09-27
申请人： Daniel G. Stearns , Donald W. Sweeney , Paul B. Mirkarimi , Anton Barty
发明人： Daniel G. Stearns , Donald W. Sweeney , Paul B. Mirkarimi , Anton Barty
IPC分类号： G01F9/00
CPC分类号： G03F7/70283 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/30
摘要： A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.
摘要翻译：提供了一种制造EUV相移掩模的方法，其包括在其上沉积具有复值反射率的薄膜多层涂层的基底。将吸收层或缓冲层附着到薄膜多层上，改变薄膜多层涂层的厚度，以便在复值反射率中引入直接调制以产生相移特征。

10. 发明授权

US06967168B2 Method to repair localized amplitude defects in a EUV lithography mask blank 有权
标题翻译：在EUV光刻掩模板中修复局部幅度缺陷的方法
公开(公告)号：US06967168B2
公开(公告)日：2005-11-22
申请号：US09896722
申请日：2001-06-29
申请人： Daniel G. Stearns , Donald W. Sweeney , Paul B. Mirkarimi , Henry N. Chapman
发明人： Daniel G. Stearns , Donald W. Sweeney , Paul B. Mirkarimi , Henry N. Chapman
IPC分类号： G21K1/06 , G01Q60/00 , G02B5/08 , G02B5/28 , G03F1/24 , G03F1/74 , H01L21/027 , H01L21/20
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G02B5/0891 , G02B5/285 , G03F1/74
摘要： A method and apparatus are provided for the repair of an amplitude defect in a multilayer coating. A significant number of layers underneath the amplitude defect are undamaged. The repair technique restores the local reflectivity of the coating by physically removing the defect and leaving a wide, shallow crater that exposes the underlying intact layers. The particle, pit or scratch is first removed the remaining damaged region is etched away without disturbing the intact underlying layers.
摘要翻译：提供了一种用于修复多层涂层中的振幅缺陷的方法和装置。振幅缺陷下方的相当数量的层没有损坏。修复技术通过物理去除缺陷并留下暴露下面完整层的宽而浅的凹坑来恢复涂层的局部反射率。首先去除颗粒，凹坑或划痕，剩余的损伤区域被蚀刻掉，而不会干扰完整的下层。

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