专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20040221880A1 Substrate treating apparatus 审中-公开
标题翻译：底物处理装置
公开(公告)号：US20040221880A1
公开(公告)日：2004-11-11
申请号：US10830936
申请日：2004-04-23
申请人： Kabushiki Kaisha Toshiba , Dainippon Screen Mfg. Co. Ltd.
发明人： Hiroshi Tomita , Soichi Nadahara , Hisashi Okuchi , Yusuke Muraoka , Takashi Miyake , Tomonori Kojimaru
IPC分类号： B08B005/00
CPC分类号： H01L21/67086 , B08B3/048 , B08B3/10
摘要： A substrate treating apparatus for performing a predetermined treatment of substrates. The apparatus includes a holder for holding a plurality of substrates in erected posture, a treating tank for storing hot sulfuric acid at at least 140null C. for treating the substrates immersed therein, and a bubble supply device including a plurality of bubble generating members formed by sintering quartz particles and arranged in the treating tank for generating bubbles of ozone gas such that the bubbles of ozone gas partially overlap one another in a direction parallel to surfaces of the substrates.
摘要翻译：一种用于执行基板的预定处理的基板处理装置。该装置包括用于以竖立姿势保持多个基板的保持器，用于储存至少140℃的热硫酸的处理槽，用于处理浸没在其中的基板;以及气泡供应装置，其包括多个气泡发生元件通过烧结石英颗粒并布置在处理槽中以产生臭氧气体的气泡，使得臭氧气体的气泡在平行于基板的表面的方向上部分地彼此重叠。

2. 发明申请

US20040182419A1 High-pressure processing apparatus and high-pressure processing method 失效
标题翻译：高压加工设备及高压加工方法
公开(公告)号：US20040182419A1
公开(公告)日：2004-09-23
申请号：US10772546
申请日：2004-02-05
申请人： Dainippon Screen Mfg. Co., Ltd. , Kabushiki Kaisha Kobe Seiko Sho
发明人： Yusuke Muraoka , Tomomi Iwata , Kimitsugu Saito , Masahiro Yamagata , Hisanori Oshiba , Shogo Sarumaru
IPC分类号： B08B003/00
CPC分类号： B08B7/0021
摘要： A mixing valve assembly 42 is communicated with a dedicated tank 51D, storing therein a compatibilizer D, via an inlet valve 43 and is also communicated with dedicated tanks 51A-51C via three injection valves, the tanks storing therein auxiliaries A-C respectively. A chemical formulation is prepared by selectively injecting any one(s) of four chemical agents into the mixing valve assembly 42 by way of on-off control of the inlet valve 43 and the injection valves and blending together the injected chemical agents. Then, the chemical formulation is pumped into SCF by a high-pressure pump 45 such that the SCF and the chemical formulation are mixed together to form a process fluid. Thus, the number of components of a high-pressure portion can be reduced to achieve a cost reduction of an apparatus. Furthermore, a pipe line for pumping the chemical agents is simplified.
摘要翻译：混合阀组件42与专用罐51D连通，经由入口阀43存储增容器D，并且还经由三个喷射阀与专用罐51A-51C连通，储罐分别存储有辅助件A-C。通过对入口阀43和喷射阀的开关控制并将注射的化学试剂混合在一起，通过选择性地将四种化学试剂中的一种或几种四种化学试剂注入混合阀组件42来制备化学制剂。然后，通过高压泵45将化学制剂泵送到SCF中，使得SCF和化学制剂混合在一起以形成工艺流体。因此，可以减少高压部分的部件的数量，以实现装置的成本降低。此外，简化了用于泵送化学试剂的管线。

3. 发明申请

US20040231698A1 High pressure processing apparatus and method 失效
标题翻译：高压加工设备及方法
公开(公告)号：US20040231698A1
公开(公告)日：2004-11-25
申请号：US10879318
申请日：2004-06-28
申请人： Dainippon Screen Mfg. Co., Ltd. , Kobe Steel, Ltd.
发明人： Ikuo Mizobata , Yusuke Muraoka , Kimitsugu Saito , Ryuji Kitakado , Yoichi Inoue , Yoshihiko Sakashita , Katsumi Watanabe , Masahiro Yamagata , Hisanori Oshiba
IPC分类号： C23G001/00 , B08B003/00
CPC分类号： B08B9/0321 , B08B7/0021 , Y10S134/902
摘要： When the hatch of a substrate washing chamber 5 is opened to receive a substrate, certain valves are closed, and a valve is opened, supply CO2 to purge the substrate washing chamber 5 to and exclude air. When the hatch is closed, another valve is opened to vent substrate washing chamber so that the CO2 expels any gas and unwanted air from the substrate washing chamber 5 and the conduits. Thereafter, super critical CO2 is used to wash the substrate and clean the circulation line. The flow of supercritical CO2 is sent to the substrate washing chamber 5. After flowing through the circulation line, including a circulation channel 11, it passes through a bypass channel 12 to a decompressor 7. Any chemicals or organic substances left in the circulation line are continuously sent to a separation/recover bath 8 together with the flow.
摘要翻译：当基板清洗室5的开口打开以接收基板时，某些阀关闭，并且打开阀门，供应CO 2以清洗基板清洗室5并排除空气。当舱口关闭时，打开另一个阀门以排放基板清洗室，使得CO 2从基板清洗室5和导管排出任何气体和不需要的空气。此后，使用超临界二氧化碳洗涤底物并清洁循环管线。超临界CO 2的流动被送到衬底洗涤室5.在流过包括循环通道11的循环管线之后，它通过旁路通道12到减压器7.留在循环管线中的任何化学物质或有机物质是连续送到分离/回收浴8与流。

4. 发明申请

US20040123484A1 High pressure processing method and apparatus 失效
标题翻译：高压加工方法及装置
公开(公告)号：US20040123484A1
公开(公告)日：2004-07-01
申请号：US10688889
申请日：2003-10-21
申请人： KABUSHIKI KAISHA KOBE SEIKO SHO , DAINIPPON SCREEN MFG. CO., LTD.
发明人： Tetsuya Yoshikawa , Yoichi Inoue , Katsumi Watanabe , Kaoru Masuda , Katsuyuki Iijima , Tomomi Iwata , Yusuke Muraoka , Kimitsugu Saito , Ikuo Mizobata
IPC分类号： C25F001/00
CPC分类号： H01L21/67017 , B08B7/0021
摘要： Disclosed is a high pressure processing method for subjecting a processing object to a high pressure processing using a high pressure fluid. In this method, the high pressure fluid is brought into collision with the surface of the processing object placed in a high pressure processing chamber, and then distributed along the surface of the processing object in an outward direction beyond the processing object.
摘要翻译：公开了一种用于使处理对象使用高压流体进行高压处理的高压处理方法。在该方法中，使高压流体与放置在高压处理室中的处理对象的表面碰撞，然后沿着处理对象的表面向外方向分布超过处理对象。

5. 发明申请

US20030019578A1 Substrate processing apparatus equipping with high-pressure processing unit 有权
标题翻译：衬底处理设备配备高压处理单元
公开(公告)号：US20030019578A1
公开(公告)日：2003-01-30
申请号：US10201383
申请日：2002-07-23
申请人： Dainippon Screen Mfg. Co., Ltd.
发明人： Tomomi Iwata , Yusuke Muraoka , Kimitsugu Saito , Ikuo Mizobata , Takashi Miyake , Ryuji Kitakado
IPC分类号： C23F001/00
CPC分类号： H01L21/67161 , C03C15/00 , C03C23/0075 , C03C23/0085 , H01L21/67173
摘要： With respect to any one of processing units, a main transportation path, a developing unit, a dedicated transportation robot and a high-pressure processing unit are disposed linearly in this order in a direction. Hence, even if a processing fluid adhering to a substrate or an evaporant of the processing fluid moves toward the main transportation path while the high-pressure processing unit transports the substrate wet with the processing fluid, there are the processing units located which the processing fluid or its evaporant must arrive at before reaching the main transportation path.
摘要翻译：对于处理单元中的任何一个，主传送路径，显影单元，专用传送机器人和高压处理单元在该方向上以该顺序线性地设置。因此，即使附着在处理液的基板或蒸发剂上的处理流体朝着主输送路径移动，而高压处理单元用处理流体输送基板，则存在处理单元，处理流体或其蒸发器必须在到达主要运输路径之前到达。

6. 发明申请

US20040194842A1 High pressure processing apparatus and high pressure processing method 失效
标题翻译：高压加工设备及高压加工方法
公开(公告)号：US20040194842A1
公开(公告)日：2004-10-07
申请号：US10826309
申请日：2004-04-19
申请人： Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd) , DAINIPPON SCREEN MFG. CO., LTD.
发明人： Yoshihiko Sakashita , Katsumi Watanabe , Hisanori Oshiba , Shogo Sarumaru , Yusuke Muraoka , Kimitsugu Saito , Ikuo Mizobata , Ryuji Kitakado
IPC分类号： B65B001/04
CPC分类号： H01L21/67017 , B08B7/0021 , H01L21/67126 , Y10S134/902
摘要： A high-pressure processing apparatus includes a processing vessel including a processing chamber formed therein to perform a certain process onto an object in the processing chamber; fluid feeding means which feeds a high-pressure fluid into the processing chamber; fluid discharging means which discharges the high-pressure fluid from the processing chamber; an agitating unit which is arranged in the processing chamber and is operative to flow the high-pressure fluid over the object by relative rotation to the processing vessel; a communicating channel which is formed in the processing vessel to communicate inside and outside of the processing chamber; a rotary driving member which is coupled to the agitating unit via a shaft portion provided in the communicating channel; and a sealing portion which is provided between the shaft portion: and the processing vessel to disconnect the processing chamber from the rotary driving member. The fluid discharging means includes a fluid discharging port formed in a certain position of the communicating channel closer to the processing chamber than the sealing portion to discharge the high-pressure fluid.
摘要翻译：高压处理装置包括：处理容器，其包括形成在其中的处理室，以对处理室中的物体执行一定的处理; 流体供给装置，其将高压流体供给到处理室中; 从处理室排出高压流体的流体排出装置; 搅拌单元，其布置在处理室中并且可操作以通过相对于处理容器的旋转将高压流体流过物体; 形成在所述处理容器中以在所述处理室内部和外部连通的连通通道; 旋转驱动构件，其经由设置在所述连通通道中的轴部联接到所述搅拌单元; 以及密封部，其设置在所述轴部与所述处理容器之间，以将所述处理室与所述旋转驱动构件断开。流体排出装置包括形成在与密封部分相比更靠近处理室的连通通道的特定位置中以排出高压流体的流体排放口。

7. 发明申请

US20040105936A1 Substrate processing method, substrate processing apparatus and substrate processing system 失效
标题翻译：基板加工方法，基板处理装置和基板处理系统
公开(公告)号：US20040105936A1
公开(公告)日：2004-06-03
申请号：US10700020
申请日：2003-11-03
申请人： Dainippon Screen Mfg. Co. Ltd.
发明人： Yusuke Muraoka , Kimitsugu Saito , Tomomi Iwata , Eiji Fukatsu , Ikuo Mizobata , Hiroyuki Ueno , Yasuo Okuyama , Takashi Gama , Yoshihiko Sakashita , Katsumi Watanabe , Jun Munemasa , Hisanori Oshiba , Shogo Sarumaru
IPC分类号： B05D003/02 , A23G003/20
CPC分类号： H01L21/67051 , G11B7/261 , G11B7/265 , H01L21/67028 , Y10S134/902
摘要： After subjected to a developing process, a rinsing process and a replacing process in this order in a developing unit 10A, 10B, a substrate W wet with an anti-drying solution is wet-transported to a supercritical drying unit 20 by a primary transport robot 30. The supercritical drying unit 20 performs a high-pressure drying process (supercritical drying process) in a dedicated manner. Accordingly, by virtue of the presence of the anti-drying solution, the substrate W is effectively prevented from becoming air-dry during the transportation of the substrate W.
摘要翻译：在显影单元10A，10B中，依次进行显影处理，漂洗处理和替换处理后，用防干燥溶液湿润的基板W通过主输送机器人被湿式输送到超临界干燥单元20 超临界干燥装置20以专用的方式进行高压干燥处理（超临界干燥处理）。因此，通过存在防干燥溶液，能够有效地防止基板W在基板W的输送过程中变得风干。

8. 发明申请

US20030177659A1 High-pressure drying apparatus, high-pressure drying method and substrate processing apparatus 失效
标题翻译：高压干燥装置，高压干燥方法和基板处理装置
公开(公告)号：US20030177659A1
公开(公告)日：2003-09-25
申请号：US10382616
申请日：2003-03-04
申请人： Dainippon Screen Mfg. Co., Ltd.
发明人： Kimitsugu Saito , Yusuke Muraoka , Ryuji Kitakado , Takashi Miyake , Tomomi Iwata , Ikuo Mizobata
IPC分类号： F26B003/00
CPC分类号： H01L21/67034 , Y10S134/902
摘要： Liquid for prevention of substrate drying is supplied into a processing chamber so that a pool of the liquid is created as an anti-drying atmosphere in advance inside a processing chamber, and substrates, as they are dipped in the pool, are kept on stand-by in a substrate board. In this manner, air drying of the substrates which are kept on stand-by is prevented. When the number of the substrates in the substrate board reaches a certain number, the anti-drying atmosphere is removed from the processing chamber, which is followed by introduction of an SCF into the processing chamber and supercritical drying (high pressure drying) of all of the plurality of substrates inside the processing chamber, namely, batch supercritical drying.
摘要翻译：将用于防止基材干燥的液体供应到处理室中，使得在处理室内预先产生作为防干燥气氛的液体池，并且当浸入池中时，将基板保持在待机状态，通过在衬底板中。以这种方式，防止了保持待机的基板的空气干燥。当基板中的基板数量达到一定数量时，从处理室中除去防干燥气氛，然后将SCF引入处理室，并将超临界干燥（高压干燥）全部处理室内的多个基板，即分批超临界干燥。

9. 发明申请

US20020170577A1 High pressure processing apparatus and method 失效
标题翻译：高压加工设备及方法
公开(公告)号：US20020170577A1
公开(公告)日：2002-11-21
申请号：US10147742
申请日：2002-05-16
申请人： Dainippon Screen Mfg. Co., Ltd.
发明人： Ikuo Mizobata , Yusuke Muraoka , Kimitsugu Saito , Ryuji Kitakado , Yoichi Inoue , Yoshihiko Sakashita , Katsumi Watanabe , Masahiro Yamagata , Hisanori Oshiba
IPC分类号： B08B003/04
CPC分类号： B08B9/0321 , B08B7/0021 , Y10S134/902
摘要： When the hatch of a substrate washing chamber 5 is opened to place a substrate therein, valves V1, V2, V3, V4 and V6 are closed, only a valve V5 being opened. Thus, gaseous CO2 is supplied into the substrate washing chamber 5 to perform a chamber purge for preventing surrounding air components from straying in. As the hatch of the substrate washing chamber 5 is closed, the valve V6 is further closed to form a vent line for the substrate washing chamber 5. Thus, the gas residing within the substrate washing chamber 5 and the conduits is expelled by CO2 gas, into the surrounding air, thereby performing a chamber purge to prevent any unwanted surrounding air components from being left. Thereafter, super critical CO2 is used to wash the substrate. When cleaning the circulation line, super critical CO2 is supplied into the circulation line. The flow of super critical CO2 is sent to the substrate washing chamber 5. After having flown all through the circulation line, including a circulation channel 11, it is passed through a bypass channel 12 to a decompressor 7. Any chemicals or organic substances left in the circulation line are continuously sent to the decompressor 8 together with the flow.
摘要翻译：当基板洗涤室5的开口打开以将基板放置在其中时，阀V1，V2，V3，V4和V6关闭，只有阀V5打开。因此，气体CO 2被供应到基板清洗室5中以执行室吹扫以防止周围的空气部件偏离。当基板清洗室5的舱口关闭时，阀V6进一步关闭以形成排气管线衬底洗涤室5.因此，驻留在衬底洗涤室5内的气体和导管被CO 2气体排出到周围空气中，从而进行室吹扫，以防止留下任何不需要的周围空气组分。此后，使用超临界CO 2来洗涤底物。当清洁循环管线时，超临界CO2被供应到循环管线中。超临界CO 2的流动被送到衬底洗涤室5.在全部通过包括循环通道11的循环管线全部通过循环通道11之后，其通过旁路通道12进入减压器7.留下的任何化学物质或有机物质循环管线与流动一起连续送到减压器8。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式