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    • 1. 发明授权
    • Magnetron sputtering cathode for vacuum coating apparatus
    • 用于真空镀膜设备的磁控溅射阴极
    • US4746417A
    • 1988-05-24
    • US896927
    • 1986-08-15
    • Dagmar FerenbachGerhard SteinigerJurgen Muller
    • Dagmar FerenbachGerhard SteinigerJurgen Muller
    • C23C14/36C23C14/35H01J37/34C23C14/34
    • H01J37/347C23C14/35H01J37/3408H01J37/3455
    • A magnetron sputtering cathode for vacuum coating apparatus has a circular target plate and at least one magnet system disposed in back of it which forms at least one endless tunnel of magnetic lines of force over the target plate. In the marginal area of the target plate there is disposed a first magnet system for the production of a first magnetic tunnel substantially concentric with the axis of rotation, and between the axis of rotation and the first magnet system there is an off-center second magnet system which produces a second magnetic tunnel extending over only a sector of the target plate. When the two magnet systems are rotated together the elements of the surface of the target plate are exposed to the product of the time of stay times the intensity such that the target plate is ablated more uniformly in the middle area and more strongly at the margin, so that a substrate field placed opposite the target plate is uniformly coated.
    • 用于真空涂覆装置的磁控溅射阴极具有圆形目标板和设置在其背面的至少一个磁体系统,其在目标板上形成至少一个磁力线的环形隧道。 在目标板的边缘区域中设置有用于产生与旋转轴线基本上同心的第一磁隧道的第一磁体系统,并且在旋转轴线与第一磁体系统之间存在偏心的第二磁体 该系统产生仅在目标板的扇区上延伸的第二磁通道。 当两个磁体系统一起旋转时,目标板的表面的元件暴露于停留时间乘以强度的乘积,使得靶板在中间区域更均匀地被烧蚀并且在边缘处更强烈地被烧蚀, 使得与目标板相对放置的基板场均匀地涂覆。
    • 6. 发明授权
    • Evaporation method of forming transparent barrier film
    • 形成透明阻挡膜的蒸发方法
    • US5378506A
    • 1995-01-03
    • US58132
    • 1993-05-10
    • Nobuhiko ImaiMamoru SekiguchiMitsuru KanoThomas KrugGerhard SteinigerAndreas Meier
    • Nobuhiko ImaiMamoru SekiguchiMitsuru KanoThomas KrugGerhard SteinigerAndreas Meier
    • C08J7/04B65D65/42C23C14/08C23C14/32C23C14/56C23C16/00
    • B65D65/42C23C14/081
    • This invention relates to a source material for vapor deposition, which is useful for forming a magnesium oxide thin film by vacuum vapor deposition process, and to a method of forming a transparent barrier film by using the magnesium oxide source material. The source material is composed of a magnesium oxide having a bulk density of 2.5 g/ml or more. This magnesium oxide can be obtained by sintering or fusing magnesium oxide material. For producing a transparent barrier film having a gas barrier property, this magnesium oxide is vapor-deposited on a surface of a transparent plastic base film by means of vacuum vapor deposition. The volume shrinkage or cracking of the evaporation source material can be avoided, thereby stabilizing the evaporation and prolonging duration of the evaporation. Further, it is possible to utilize a high power of electron beam. Since the evaporation source material is substantially free from pore, the evacuation of gas from the evaporation apparatus can be finished within a short period of time, and the vacuum degree within the evaporation apparatus can be stabilized. Since there is no splash or scattering during the evaporation., a transparent barrier film which is uniform in thickness and free from pinhole can be obtained.
    • 本发明涉及一种用于气相沉积的源材料,其用于通过真空气相沉积法形成氧化镁薄膜,以及通过使用氧化镁源材料形成透明阻挡膜的方法。 源材料由堆积密度为2.5g / ml以上的氧化镁构成。 该氧化镁可以通过烧结或熔融氧化镁材料得到。 为了制造具有阻气性的透明阻挡膜,通过真空气相沉积将该氧化镁气相沉积在透明塑料基膜的表面上。 可以避免蒸发源材料的体积收缩或破裂,从而稳定蒸发并延长​​蒸发的持续时间。 此外,可以利用大功率的电子束。 由于蒸发源材料基本上没有孔,所以可以在短时间内完成从蒸发装置排出的气体,并且可以使蒸发装置内的真空度稳定。 由于在蒸发期间没有飞溅或散射,可以获得厚度均匀且无针孔的透明阻挡膜。