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1. 发明专利

JP2014003095A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2014003095A
公开(公告)日：2014-01-09
申请号：JP2012136260
申请日：2012-06-15
申请人： Denso Corp , 株式会社デンソー
发明人： OKURA YASUTSUGU
IPC分类号： H01L29/78 , G01K7/01 , H01L21/336 , H01L27/04
CPC分类号： H01L24/33 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve temperature detection accuracy while inhibiting a short circuit.SOLUTION: A semiconductor device (10) comprises: a semiconductor substrate (20) on which an element is formed; an electrode (21) which is formed on a principal surface (20a) of the semiconductor substrate and electrically connected with the element; a temperature sensor (23) which is electrically independent from the electrode and formed on the principal surface side of the semiconductor substrate; and a first insulation film (25) formed on the principal surface with the temperature sensor covered so as to electrically insulate the temperature sensor with respect to solder (12) which is electrically connected with the electrode. The solder is arranged so as to cover at least a part of the temperature sensor. The semiconductor device includes a protection part (27) which has heat conductivity higher than that of air and inhibits stress caused by displacement of the solder from propagating to the first insulation film. The protection part is arranged to cover the first insulation film so as to be sandwiched between the solder and the first insulation film.
摘要翻译：要解决的问题：提供一种可以在抑制短路的同时提高温度检测精度的半导体器件。解决方案：半导体器件（10）包括：形成有元件的半导体衬底（20）电极（21），其形成在所述半导体衬底的主表面（20a）上并与所述元件电连接; 温度传感器（23），其与所述电极电独立并且形成在所述半导体基板的所述主表面侧上; 以及第一绝缘膜（25），其形成在所述主表面上，所述温度传感器被覆盖以使得所述温度传感器相对于与所述电极电连接的焊料（12）电绝缘。焊料布置成覆盖温度传感器的至少一部分。半导体器件包括具有高于空气的导热性的保护部分（27），并且抑制由焊料的位移引起的应力传播到第一绝缘膜。保护部件被布置成覆盖第一绝缘膜，以夹在焊料和第一绝缘膜之间。

2. 发明专利

JP2012054403A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2012054403A
公开(公告)日：2012-03-15
申请号：JP2010195837
申请日：2010-09-01
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： KOYAMA MASAKI , OKURA YASUTSUGU , SOENO AKITAKA , NAGAOKA TATSUJI , SUGIYAMA TAKAHIDE , AOI SACHIKO , IGUCHI HIROKO
IPC分类号： H01L27/04 , H01L21/8234 , H01L27/06 , H01L27/088 , H01L29/06 , H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit hole injection from an insulated gate bipolar transistor (IGBT) element region to a diode element region and has a structure ensuring breakdown voltage.SOLUTION: In a diode cell 20, a P-type resurf region 52 is formed as an anode having a depth deeper than a trench 38 of an IGBT cell 10 and a surface density lower than that of a channel layer 37, and a P+ type second contact region 55 is formed on a surface part of the resurf region 52. Accordingly, a depletion layer formed by the channel layer 37 in a drift layer 33 and a depletion layer formed by the resurf region 52 in the drift layer 33 are smoothly linked at around a boundary between the IGBT cell 10 and the diode cell 20 thereby easing electric field concentration at around the boundary to ensure the breakdown voltage of the semiconductor device.
摘要翻译：解决的问题：提供一种能够抑制从绝缘栅双极晶体管（IGBT）元件区域向二极管元件区域的空穴注入并具有确保击穿电压的结构的半导体器件。解决方案：在二极管单元20中，形成深度比IGBT单元10的沟槽38深的表面密度比沟道层37的面密度低的阳极作为阳极，并且因此，在漂移层33中由沟道层37形成的耗尽层和由漂移层33中的再生区域52形成的耗尽层，形成P +型第二接触区域55。在IGBT单元10和二极管单元20之间的边界周围平滑地连接，从而缓和了边界周围的电场集中，以确保半导体器件的击穿电压。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2012015453A Semiconductor module and method for manufacturing the same 有权
标题翻译：半导体模块及其制造方法
公开(公告)号：JP2012015453A
公开(公告)日：2012-01-19
申请号：JP2010153125
申请日：2010-07-05
申请人： Denso Corp , 株式会社デンソー
发明人： FUKUTANI KEITA , MASAMITSU KUNIAKI , OKURA YASUTSUGU , NISHIHATA MASAYOSHI , WADO HIROYUKI
IPC分类号： H01L25/07 , H01L23/34 , H01L25/18
CPC分类号： H01L24/97 , H01L2224/05554 , H01L2224/32245 , H01L2224/33181 , H01L2224/371 , H01L2224/40 , H01L2224/40137 , H01L2224/40245 , H01L2224/40247 , H01L2224/48247 , H01L2224/49175 , H01L2224/73221 , H01L2224/83801 , H01L2224/84801 , H01L2224/97 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2224/86 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor module capable of reducing the number of components, suppressing an increase in the area, and preventing the manufacturing process from being complicated.SOLUTION: The semiconductor module comprises a connection part 18a configured in a terminal 18 arranged between a semiconductor chip 11a and a heat sink 17a at an upper arm side, and makes the connection part 18a to be connected to a heat sink 16b at a lower arm side. It is possible to reduce the number of components and to prevent the manufacturing process from being complicated by configuring the connection part 18a in the terminal 18 compared with the case in which the connection part 18a is composed of a separate component. The connection part 18a is bent to incline against the other part of the terminal 18. Therefore it is possible to suppress the increase in areas of the heat sinks 17a and 16b.
摘要翻译：要解决的问题：提供能够减少部件数量，抑制面积增加并且防止制造过程复杂的半导体模块。解决方案：半导体模块包括配置在布置在半臂芯片11a和上臂侧的散热器17a之间的端子18中的连接部分18a，并使连接部分18a与散热片16b连接下臂一侧。与连接部18a由单独的部件构成的情况相比，可以减少部件的数量并且防止制造过程由于构成端子18中的连接部18a而变得复杂。连接部18a被弯曲成与端子18的另一部分倾斜。因此，可以抑制散热器17a和16b的面积的增加。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2011029589A Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2011029589A
公开(公告)日：2011-02-10
申请号：JP2010022340
申请日：2010-02-03
申请人： Denso Corp , 株式会社デンソー
发明人： NISHIHATA MASAYOSHI , OKURA YASUTSUGU
IPC分类号： H01L23/34 , H01L23/28
CPC分类号： H01L23/473 , H01L23/3735 , H01L23/4334 , H01L24/48 , H01L2224/32245 , H01L2224/33181 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2924/00014 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： PROBLEM TO BE SOLVED: To provide a structure that eliminates the need to grind or cut a sealing resin and heat radiation surfaces so as to expose the heat radiation surfaces from the sealing resin. SOLUTION: In the semiconductor device, a concave section 43 is provided to a second heat sink 40, and a first sealing resin 50 is provided in the concave section 43. Thus, the first sealing resin 50 is arranged in the concave section 43, so that a second heat radiation surface 41 positioned on the opposite side from a bottom surface 44 of the concave section 43 is not buried in the first sealing resin 50. Further, a top surface 51 of the first sealing resin 50 is positioned on the side of a first end surface 12 with respect to a first radiation surface 11. Consequently, the first heat radiation surface 11 is not covered with the first sealing resin 50 to be buried. Therefore, there is no need to grind or cut the first sealing resin 50 and the respective heat radiation surfaces 11 and 41 so as to expose the respective heat radiation surfaces 11 and 41 from the first sealing resin 50. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种不需要研磨或切割密封树脂和散热表面以便将热辐射表面暴露于密封树脂的结构。解决方案：在半导体器件中，凹部43设置在第二散热器40上，第一密封树脂50设置在凹部43中。因此，第一密封树脂50配置在凹部 43，使得位于与凹部43的底面44相反的一侧的第二散热面41不会埋设在第一密封树脂50中。此外，第一密封树脂50的顶面51位于第一端表面12相对于第一辐射表面11的一侧。因此，第一散热表面11不被第一密封树脂50覆盖以被掩埋。因此，不需要研磨或切割第一密封树脂50和相应的散热表面11和41，以便使第一密封树脂50暴露各散热表面11和41。版权所有：（C ）2011，JPO＆INPIT

5. 发明专利

JP2010087111A Semiconductor device, and inverter circuit using the same 有权
标题翻译：半导体器件和使用相同的反相器电路
公开(公告)号：JP2010087111A
公开(公告)日：2010-04-15
申请号：JP2008252790
申请日：2008-09-30
申请人： Denso Corp , 株式会社デンソー
发明人： OKURA YASUTSUGU
IPC分类号： H01L25/07 , H01L25/18 , H02M7/48
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a structure such that parasitic inductance is reduced when a semiconductor device is incorporated into an inverter circuit and an inspection at the final structure where the semiconductor device is incorporated into the inverter circuit is made possible, when the semiconductor device is inspected. SOLUTION: A first heat dissipation member 10 to be an N terminal is thermally and electrically connected to the top surface 13b of an IGBT chip 13, a second heat dissipation member 11 to be a P terminal is thermally and electrically connected to the reverse surface 14b of a diode chip 14, and a third heat dissipation member 12 to be an intermediate terminal is thermally and electrically connected to the reverse surface 13a of the IGBT chip 13 and the top surface 14a of the diode chip 14. Consequently, the reflow diode element of an upper arm 31 and the IGBT element of a lower arm 32 are connected in one semiconductor device without intervening of any other member. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种结构，使得当将半导体器件并入逆变器电路中时，寄生电感降低，并且使半导体器件结合到逆变器电路中的最终结构的检查成为可能，当检查半导体器件。解决方案：作为N端子的第一散热构件10热电连接到IGBT芯片13的顶面13b，作为P端子的第二散热构件11热电连接到二极管芯片14的反面14b和作为中间端子的第三散热构件12热电连接到IGBT芯片13的反面13a和二极管芯片14的顶面14a。因此，上臂31的回流二极管元件和下臂32的IGBT元件连接在一个半导体器件中，而不会插入任何其它元件。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2010087110A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2010087110A
公开(公告)日：2010-04-15
申请号：JP2008252788
申请日：2008-09-30
申请人： Denso Corp , 株式会社デンソー
发明人： OKUMURA TOMOMI , OKURA YASUTSUGU
IPC分类号： H01L23/40
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To improve the heat dissipation property of a double-sided heat dissipation semiconductor device without increasing the plane size of a heatsink. SOLUTION: A semiconductor device 100 includes a semiconductor element 1; heatsinks 2 and 3 electrically and thermally joined to the front surface and rear surface of the semiconductor element 1, respectively; and cooling devices 9 thermally joined to heat dissipation surfaces 2b and 3b of the heatsinks 2 and 3 which are surfaces opposite to the semiconductor element 1. A projected portion of the semiconductor element 1 on each heat dissipation surface 2b and 3b of each heatsink 2 and 3 is a convex portion 10 projecting toward the cooling devices 9 which face the heat dissipation surfaces 2b and 3b. Meanwhile, a portion of each cooling device 9 which faces the corresponding convex portion 10 is a concave portion 11. Each of the convex portions 10 is engaged with one of the concave portions 11. Between each of the convex portions 10 and one of the concave portions 11, an insulation film 12 is formed to electrically insulate the convex portion 10 and the concave portion 11. The convex portion 10 and the concave portion 11 are in contact with each other via the insulation film 12. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提高双面散热半导体器件的散热性能，而不增加散热片的平面尺寸。解决方案：半导体器件100包括半导体元件1; 散热片2和3分别电连接和热连接到半导体元件1的前表面和后表面; 以及与散热器2和3的与半导体元件1相对的表面的散热面2b和3b热连接的冷却装置9.半导体元件1在每个散热器2的每个散热表面2b和3b上的突出部分和 3是朝向散热面2b，3b的冷却装置9突出的凸部10。同时，每个冷却装置9的与相应的凸部10相对的部分是凹部11.每个凸部10与凹部11中的一个接合。在每个凸部10和凹部部分11，形成绝缘膜12以使凸部10和凹部11电绝缘。凸部10和凹部11经由绝缘膜12彼此接触。版权所有：（C ）2010，JPO＆INPIT

7. 发明专利

JP2005045123A Trench gate type semiconductor device and its manufacturing device 审中-公开
标题翻译： TRENCH门式半导体器件及其制造设备
公开(公告)号：JP2005045123A
公开(公告)日：2005-02-17
申请号：JP2003279293
申请日：2003-07-24
申请人： Denso Corp , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー
发明人： TAKATANI HIDESHI , HAMADA KIMIMORI , OKURA YASUTSUGU , KUROYANAGI AKIRA
IPC分类号： H01L29/41 , H01L21/336 , H01L29/417 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a trench gate type MOS FET of low ON resistance.
SOLUTION: An n
- -type drift region 2 and a p-channel region 3 are laminated one by one on an n
+ -type substrate 1. An n
+ -type source region 4 and a p
+ -type body region 5 are formed to a stripe in an upper surface of the p-channel region 3. A trench 7 passes through the p(n)-type channel region 3 and attains to the n
- -type drift region 2, and a gate 9 constituted of polycrystalline silicon is buried via a gate insulating film 8. The n
+ -type source region 4 and the p
+ -type body region 5 extend from the p(n)-type channel region 3 to a source electrode 20 and cross the trench 7. The upper surface of the gate 9 is located above the upper surface of the p-channel region 3. A layer insulating film 10 is inside the trench 7, and its upper surface is located below an opening of the trench 7. The source electrode 20, the n
+ -type source region 4 and the p
+ -type body region 5 are electrically connected each in a side wall of the trench 7.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供低导通电阻的沟槽栅型MOS FET。解决方案：将n - / SP>型漂移区2和p沟道区3逐层层叠在n + 型衬底1上.n 在p沟道区域3的上表面中形成有条纹的 + 型源极区域4和ap + 型体区域5.沟槽7通过 p（n）型沟道区3并达到n - SP型漂移区2，并且由多晶硅构成的栅极9通过栅极绝缘膜8埋入。n + 型源极区域4和p + 型体区域5从p（n）型沟道区域3延伸到源电极20并与沟槽7交叉。栅极9的上表面位于p沟道区域3的上表面之上。层间绝缘膜10位于沟槽7内，其上表面位于沟槽7的开口下方。源电极20 ，n + 型源区域4和p + 型体区域5分别电连接在一侧沟槽的墙壁7.版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2003133329A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2003133329A
公开(公告)日：2003-05-09
申请号：JP2002223933
申请日：2002-07-31
申请人： DENSO CORP
发明人： OKURA YASUTSUGU , MASAMITSU KUNIAKI , HIRANO NAOHIKO
IPC分类号： H01L29/41 , H01L21/336 , H01L21/768 , H01L23/29 , H01L23/40 , H01L23/522 , H01L29/417 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To prevent large deformation of an organic protection film, when a large thermal stress is applied to a semiconductor device and to almost surely eliminate short circuiting of a wiring layer. SOLUTION: This semiconductor device is formed by jointing heat sinks 4 with a semiconductor element 1 on its both sides. If the thickness of a wiring layer 2 provided on the surface of the semiconductor element 1 is defined as t1, and if the thickness of an organic protection film 3 formed as to cover a wiring layer 2 is defined as t2, the two values have the relation t1 / deg.C. By making the semiconductor have such a structure, the short circuiting of the wiring layer 2 can almost surely prevented, according to the result of trial manufacture and experiment, etc.

9. 发明专利

JP2014241334A 半導体装置有权
标题翻译：半导体器件
公开(公告)号：JP2014241334A
公开(公告)日：2014-12-25
申请号：JP2013122918
申请日：2013-06-11
申请人：株式会社デンソー , Denso Corp , 富士電機株式会社 , Fuji Electric Co Ltd
发明人： SUGIURA SHUN , OKURA YASUTSUGU , FUJII TAKASHI , IMAGAWA TETSUTARO
IPC分类号： H01L21/822 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L27/04 , H01L29/41 , H01L29/417
CPC分类号： H01L23/562 , H01L23/34 , H01L23/4824 , H01L23/528 , H01L27/0255 , H01L29/417 , H01L2924/0002 , H01L2924/00
摘要：【課題】表面電極と裏面電極がともにはんだ付けされる半導体装置において、反りを抑制しつつ、温度センサの温度検出精度の低下を抑制する。【解決手段】半導体装置(10)は、素子を有する半導体基板(12)と、半導体基板の表面上に設けられ、はんだ付けされる表面電極(18)と、半導体基板における表面と反対の裏面上に設けられ、はんだ付けされる裏面電極(14)と、半導体基板の表面上における分離領域(28)に設けられた保護膜(20)と、半導体基板の表面側に設けられた温度センサ(22)と、を備える。表面電極は、分離領域で、保護膜により、表面に沿う少なくとも2方向において複数に分割されている。分離領域は、分割されて互いに隣り合う表面電極の対向辺間に位置する対向領域(30)と、分離領域同士が交わる部分である交差領域(32)と、を含む。温度センサは、分離領域のうちの対向領域のみに配置されている。【選択図】図1
摘要翻译：要解决的问题：为了抑制温度传感器的温度检测精度的降低，同时抑制表面电极和背面电极两者焊接接合的半导体器件的翘曲。解决方案：半导体器件（10）包括：半导体衬底（12））有一个元素表面电极（18），其设置在所述半导体基板的表面上并焊接; 背面电极（14），设置在与表面相对的背面上，焊接接合; 设置在所述半导体衬底的表面上的隔离区域（28）中的保护膜（20）以及设置在半导体基板的表面侧的温度传感器（22）。表面电极通过保护膜沿着表面的隔离区域在至少两个方向上分成多个表面电极。隔离区域包括位于表面电极的彼此分开和相邻的相对侧之间的相对区域（30）和作为隔离区域彼此交叉的部分的交叉区域（32）。温度传感器仅布置在隔离区域中的相对区域中。

10. 发明专利

JP2014093486A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2014093486A
公开(公告)日：2014-05-19
申请号：JP2012244712
申请日：2012-11-06
申请人： Denso Corp , 株式会社デンソー
发明人： OKURA YASUTSUGU
IPC分类号： H01L29/78 , H01L21/336 , H01L21/8234 , H01L27/04 , H01L27/06 , H01L27/088 , H01L29/739
CPC分类号： H01L22/32 , G01R31/2621 , H01L22/14 , H01L27/088 , H01L29/0696 , H01L29/7397 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that is able to restrict partial current concentration without using special tester in screening at high current density, and to provide an inspection method therefor.SOLUTION: A semiconductor device comprises: a semiconductor substrate (12) provided with a plurality of gate electrodes (26) arranged parallel to one another in a first direction and having a plurality of transistor cells (44) as cells (42) defined by adjacent gate electrodes; a gate wire (38) and a gate pad (36) that are formed on a first principal surface (12a) of a semiconductor substrate; a first pad (32) formed on the first principal surface and common to the plurality of transistor cells; and a second pad (40) formed on the first principal surface or a second principal surface (12b) and common to the transistor cells. A plurality of gate pads are provided, and gate electrodes are electrically separated into a plurality of types by the gate wires. Additionally, a plurality types of transistor cell are provided by combinations of defined gate electrodes.
摘要翻译：要解决的问题：提供一种在高电流密度下筛选时能够限制局部电流集中的半导体器件，并提供其检查方法。一种半导体器件，包括：半导体衬底（12）设置有沿第一方向彼此平行布置的多个栅电极（26），并且具有作为由相邻栅电极限定的单元（42）的多个晶体管单元（44）; 形成在半导体衬底的第一主表面上的栅极线（38）和栅极焊盘（36）; 形成在所述第一主表面上并且与所述多个晶体管单元共用的第一焊盘（32）以及形成在所述第一主表面上的第二焊盘（40）或所述晶体管单元共用的第二主表面（12b）。提供多个栅极焊盘，并且栅电极通过栅极线电分离成多种类型。此外，通过限定的栅电极的组合提供多种类型的晶体管单元。

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