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1. 发明专利

JP2009188346A Semiconductor module 有权
标题翻译：半导体模块
公开(公告)号：JP2009188346A
公开(公告)日：2009-08-20
申请号：JP2008029417
申请日：2008-02-08
申请人： Denso Corp , 株式会社デンソー
发明人： OKOCHI YASUYUKI , MASAMITSU KUNIAKI
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L25/18 , H01L24/33 , H01L25/072 , H01L25/112 , H01L2224/32245 , H01L2224/33181 , H01L2924/1305 , H01L2924/13055 , H02M7/003 , Y10T307/587 , Y10T307/593 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor module realizing size reduction of a device using the semiconductor module and having excellent heat radiating property. SOLUTION: A plurality of mutually parallel-connected switching semiconductor elements 2 are integrated with at least one circulating semiconductor element 3 inversely parallel-connected to the plurality of switching semiconductor elements 2 to form the semiconductor module 1. The circulating semiconductor element 3 is disposed between the plurality of switching semiconductor elements 2 and the switching semiconductor elements 2 are disposed at both ends in the arranging direction of these two kinds of semiconductor elements. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种实现使用半导体模块的器件的尺寸减小并且具有优异的散热性能的半导体模块。解决方案：多个相互平行连接的开关半导体元件2与至少一个与多个开关半导体元件2反并联的循环半导体元件3集成，以形成半导体模块1.循环半导体元件3 设置在多个开关半导体元件2之间，并且开关半导体元件2设置在这两种半导体元件的排列方向的两端。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2009146950A Semiconductor device, and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2009146950A
公开(公告)日：2009-07-02
申请号：JP2007320020
申请日：2007-12-11
申请人： Denso Corp , 株式会社デンソー
发明人： MASAMITSU KUNIAKI , OKURA YASUTSUGU , OKUMURA TOMOMI
IPC分类号： H01L23/36
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To simplify a fixture constitution while eliminating the need for top-bottom inversion after a component setting in a fixture for component assembly is completed, when a semiconductor device is manufactured by setting a first solder, a semiconductor element, a second solder, and a second metal plate mounted in order on one surface of a first metal plate and making respective components to be bonded through solder reflow. SOLUTION: Hole parts 22 are provided at outer peripheral parts of mounting regions R1 and R2 of a semiconductor element 10 and the second metal plate 30 on one surface 21 of the first metal plate 20, and the fixture 200 is prepared which has a through-hole 201 and a projection part 202 projecting from the reverse surface such that a side surface of the projection part 202 and an inner wall of the through-hole 201 are on the same continuous plane. After the first metal plate 20 and fixture 200 are fixed by engaging the projection part 202 with the hole part 22, the first solder 40, semiconductor element 10, second solder 50, and second metal plate 30 are sequentially positioned by the inner wall of the through-hole 201 and mounted. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了简化固定装置结构，同时在部件组装用固定件中的部件设定完成之后，不需要上下倒置，当通过设定第一焊料制造半导体器件时，半导体元件，第二焊料和第二金属板，依次安装在第一金属板的一个表面上，并使各个部件通过焊料回流焊接。解决方案：在第一金属板20的一个表面21上，半导体元件10的安装区域R1和R2的外周部分和第二金属板30上设置有孔部件22，通孔201和从反面突出的突起部202，使得突出部202的侧面和通孔201的内壁在同一连续平面上。在通过将突出部分202与孔部分22接合来固定第一金属板20和固定装置200之后，第一焊料40，半导体元件10，第二焊料50和第二金属板30依次位于通孔201并安装。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008218455A Lead frame and lead frame housing tool 审中-公开
标题翻译：引导框架和引线框架外壳工具
公开(公告)号：JP2008218455A
公开(公告)日：2008-09-18
申请号：JP2007049411
申请日：2007-02-28
申请人： Denso Corp , 株式会社デンソー
发明人： KUSAMA HIROTOSHI , MASAMITSU KUNIAKI , OKUMURA TOMOMI , YAGI KENJI
IPC分类号： H01L23/50 , H01L23/48
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To prevent deformation of the shape of each of bonding wires by preventing the deformation of leads in a lead frame in which a semiconductor chip is attached on an island and the semiconductor chip is wire-bonded with the leads. SOLUTION: A thick reinforcing protrusion 15 is formed on the external circumferential portion of the lead frame 16. The semiconductor chip is mounted on the island (lower terminal 3), and the semiconductor chip is connected to the leads 5 via bonding wires. With this configuration, if a force deforming the lead frame body is applied in handling the lead frame, the reinforcing function of the reinforcing protrusion 15 prevents the actual deformation of the lead frame body 16. The deformation or displacement of the leads 5 is thereby prevented and the deformation of the bonding wires connecting the leads 5 to the semiconductor is also prevented. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了防止每个接合线的形状的变形，通过防止半导体芯片附着在岛上的引线框架中的引线变形，并且半导体芯片与引线接合。解决方案：在引线框架16的外周部分上形成厚的加强突起15.半导体芯片安装在岛（下端子3）上，并且半导体芯片通过接合线连接到引线5 。通过这种结构，如果在处理引线框架时施加使引线框体变形的力，则加强突起15的加强功能防止引线框体16的实际变形。由此防止引线5的变形或位移并且还防止了将引线5连接到半导体的接合线的变形。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008210829A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2008210829A
公开(公告)日：2008-09-11
申请号：JP2007043374
申请日：2007-02-23
申请人： Denso Corp , 株式会社デンソー
发明人： MASAMITSU KUNIAKI
IPC分类号： H01L23/28 , H01L25/04 , H01L25/18
CPC分类号： H01L24/33 , H01L2224/32245 , H01L2224/33181 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/1815 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a double-sided heat dissipation semiconductor device in which first heat dissipation plate out of first and second heat dissipation plates consists of a plurality of heat dissipation plates having different potentials, and the grease provided on one heat dissipation plate having a different potential is prevented from touching the grease provided on the other heat dissipation plate when the heat dissipation surfaces of the first and second heat dissipation plates are touched to a cooler. SOLUTION: The first heat dissipation plate 30 is constituted as an assembly of a first left heat dissipation plate 31 and a first right heat dissipation plate 32 having different potentials, and a groove 80 is provided in the surface of a mold resin 70 located between these first left heat dissipation plate 31 and the first right heat dissipation plate 32 to lie between these heat dissipation plates 31 and 32 having different potentials. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种双面散热半导体装置，其中第一散热板和第二散热板之间的第一散热板由具有不同电位的多个散热板组成，并且在一个散热板上设置一个当第一和第二散热板的散热面接触冷却器时，防止具有不同电位的散热板接触设置在另一个散热板上的油脂。解决方案：第一散热板30构成为具有不同电位的第一左侧散热板31和第一右侧散热板32的组件，在模制树脂70的表面设置有槽80 位于这些第一左侧散热板31和第一右侧散热板32之间，以位于具有不同电位的这些散热板31和32之间。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2007300059A Semiconductor device, and method of manufacturing same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2007300059A
公开(公告)日：2007-11-15
申请号：JP2006351725
申请日：2006-12-27
申请人： Denso Corp , 株式会社デンソー
发明人： MASAMITSU KUNIAKI
IPC分类号： H01L23/34 , H01L23/50
CPC分类号： H01L23/4334 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L25/18 , H01L2224/32245 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To ensure parallelism and flatness on the radiating surfaces of a pair of heat radiators during the manufacture of a semiconductor device having the pair of heat radiators on both sides of a semiconductor chip. SOLUTION: A first heat radiator 11 to which a lead frame 70 is joined is placed on a pedestal 110, and a second heat radiator 12 is placed on terminals bent to the second heat radiator 12 out of hung terminals 71 to 76 and main terminals 61 and 62 in a lead frame 70. In this state, the second heat radiator 12 is pressed to the pedestal 110 with a lid 130 such that the radiating surface of the second heat radiator 12 is in parallel with the radiating surface of the first heat radiator 11. At this moment, by a spring reaction force obtained by bending the hung terminals 73 to 75 and the second main terminal 62 to which the second heat radiator 12 is pressed, the hung terminals 73 to 75 and the second main terminal 62 which have been bent to the second heat radiator 12 are pressed and contacted to the second heat radiator 12. In this state, the lead frame 70 and the second heat radiator 12 are joined to each other. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了确保在半导体芯片的两侧具有一对散热器的半导体器件的制造期间确保一对散热器的辐射表面上的平行度和平坦度。解决方案：将引线框架70连接到的第一散热器11放置在基座110上，并且第二散热器12被放置在从端子71至76的悬挂端子弯曲到第二散热器12的端子上，主引导框架70中的主端子61和62.在这种状态下，第二散热器12用盖130按压到基座110，使得第二散热器12的散热表面与此时，通过弯曲悬挂端子73〜75和第二散热器12被按压的第二主端子62而获得的弹簧反作用力，悬挂端子73〜75和第二主端子已经弯曲到第二散热器12的第二散热器12被压接并接触第二散热器12.在这种状态下，引线框架70和第二散热器12彼此接合。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007282313A Rotating machine drive unit 审中-公开
标题翻译：旋转机驱动单元
公开(公告)号：JP2007282313A
公开(公告)日：2007-10-25
申请号：JP2006101802
申请日：2006-04-03
申请人： Denso Corp , 株式会社デンソー
发明人： MASAMITSU KUNIAKI , TEJIMA TAKANORI
IPC分类号： H02M7/48 , B60L3/00
CPC分类号： H01L2224/33 , H01L2224/48091 , H01L2224/48137 , H01L2224/48472 , H01L2224/49111 , H01L2224/49175 , Y02T10/7241 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a rotating machine drive unit which can perform sure protection without increasing parasitic inductance when an overcurrent is detected with respect to a current flowing to an inverter circuit. SOLUTION: A fuse 9 is arranged between the output end of the inverter circuit 6 and a motor generator 3, and both the output end and the motor generator are made to be surely open by welding the fuse 9 when the overcurrent is generated. By arranging the fuse 9 in this position, the fuse 9 does not act as the parasitic inductance when an IGBT 81 which constitutes the inverter circuit 6 performs switching, and thereby an increase in switching surge can be suppressed. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种旋转机械驱动单元，当相对于流向逆变器电路的电流检测到过电流时，可以执行肯定的保护而不增加寄生电感。解决方案：在逆变器电路6的输出端和电动发电机3之间设有保险丝9，并且当产生过电流时，通过焊接熔断器9使输出端和电动发电机两者均可靠地打开。通过将保险丝9布置在该位置，当构成逆变器电路6的IGBT81进行开关时，保险丝9不起到寄生电感的作用，从而可以抑制开关浪涌的增加。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2005123233A Cooling structure of semiconductor device 有权
标题翻译：半导体器件的冷却结构
公开(公告)号：JP2005123233A
公开(公告)日：2005-05-12
申请号：JP2003353412
申请日：2003-10-14
申请人： Denso Corp , 株式会社デンソー
发明人： KATO NOBUYUKI , NAKASE YOSHIMI , MASAMITSU KUNIAKI
IPC分类号： H01L23/40 , H01L23/29
CPC分类号： H01L24/33 , H01L24/32 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To prevent a semiconductor device from being relatively misaligned with a cooler in the cooling structure of the semiconductor device, wherein the semiconductor device which is equipped with a pair of heatsinks provided on both sides of a semiconductor chip and almost sealed up with resin is brought into contact with coolers via insulating materials. SOLUTION: The semiconductor device 100 is equipped with the semiconductor chip 10 and the heatsinks 20 and 30 bonded on both the sides of the semiconductor chip 10, entirely sealed up with resin 60, and brought into contact with the coolers 120 through the intermediary of the insulating materials 110 in the cooling structure of the semiconductor device. In the cooling structure of the semiconductor device, a wall-shaped guide 150 for regulating a relative positional relation between the semiconductor device 100 and the cooler 120 is provided to the upper and lower surface of the semiconductor device 100, respectively. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了防止半导体器件与半导体器件的冷却结构中的冷却器相对不对准，其中装备有设置在半导体芯片的两侧的一对散热器的半导体器件和几乎用树脂密封，通过绝缘材料与冷却器接触。解决方案：半导体器件100配备有半导体芯片10和结合在半导体芯片10的两侧上的散热器20和30，其完全用树脂60密封，并且通过该半导体芯片10与冷却器120接触半导体器件的冷却结构中的绝缘材料110的介质。在半导体器件的冷却结构中，分别在半导体器件100的上表面和下表面上设置用于调节半导体器件100和冷却器120之间的相对位置关系的壁形引导件150。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2013247229A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013247229A
公开(公告)日：2013-12-09
申请号：JP2012119799
申请日：2012-05-25
申请人： Denso Corp , 株式会社デンソー
发明人： IDE SHIGEO , MASAMITSU KUNIAKI
IPC分类号： H01L23/473 , H01L23/427
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can efficiently radiate heat from both surfaces of a semiconductor module.SOLUTION: The semiconductor device comprises: semiconductor modules 10; a fluid cooling block 20 on which the semiconductor modules 10 are mounted; and a heat transfer member 30 for transferring heat from the semiconductor modules 10 to the fluid cooling block 20. Inside the fluid cooling block 20, a fluid is flowing. The fluid cooling block 20 includes a cooling part 26 provided at a position opposite to the semiconductor modules 10 and an inflow path 21 for supplying a fluid to the cooling part 26. The heat transfer member 30 includes a heat absorption part 31 attached to the semiconductor module 10, a heat radiation part 32 attached to the fluid cooling block 20 and heat pipes 33 for linking the heat absorption part 31 and the heat radiation parts 32. The heat radiation part 32 is attached to only a part 27 which encloses an upstream side with respect to the cooling part 26 of the fluid cooling block 20.
摘要翻译：要解决的问题：提供一种能够有效地从半导体模块的两个表面辐射热量的半导体器件。解决方案：半导体器件包括：半导体模块10; 安装半导体模块10的流体冷却块20; 以及用于将热量从半导体模块10传递到流体冷却块20的传热构件30.在流体冷却块20内部，流体流动。流体冷却块20包括设置在与半导体模块10相对的位置处的冷却部26和用于向冷却部26供给流体的流入路径21.传热构件30包括附接到半导体的热吸收部31 模块10，附接到流体冷却块20的散热部分32和用于连接吸热部分31和散热部分32的热管33.散热部分32仅附接到包围上游侧的部分27 相对于流体冷却块20的冷却部26。

9. 发明专利

JP2008166333A Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2008166333A
公开(公告)日：2008-07-17
申请号：JP2006351072
申请日：2006-12-27
申请人： Denso Corp , 株式会社デンソー
发明人： MASAMITSU KUNIAKI
IPC分类号： H01L23/34 , H01L23/00
CPC分类号： H01L24/73 , H01L2224/32245 , H01L2224/33181 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To prevent current from flowing in an internal circuit due to electrostatic induction of static electricity, in a double-sided heat dissipation type semiconductor device. SOLUTION: Conductor layers 21b and 22b with conductivity are fitted to surfaces exposing from a mold resin 80 in insulation layers 21a and 22a that are respectively provided on the outer surfaces of both heat slingers 21 and 22. The conductor layer 21b on one heat slinger 21 and the conductor layer 22b on the other heat slinger 22 are electrically connected with each other by a connection member 25 with conductivity. COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2008153615A Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：JP2008153615A
公开(公告)日：2008-07-03
申请号：JP2007222813
申请日：2007-08-29
申请人： Denso Corp , 株式会社デンソー
发明人： MASAMITSU KUNIAKI
IPC分类号： H01L21/822 , G01R31/26 , H01L21/66 , H01L27/04 , H01L29/739 , H01L29/78 , H03K17/08
摘要： PROBLEM TO BE SOLVED: To reduce the deterioration of a gate of a power semiconductor element in the inspection of a protection circuit. SOLUTION: A power semiconductor device includes a protection circuit 20 for protecting an IGBT 10 by suppressing the voltage between a gate terminal G and a current-sensing terminal S of the IGBT 10 at the time when an abnormal voltage is input to the gate terminal G from the outside. The protection circuit 20 comprises zener diodes 21 and 22 connected in series. There is provided a wiring 40 for electrically connecting a connection point P1 between the zener diodes 21 and 22 of the protection circuit 20 and a terminal electrode T for dividing to inspect the protection circuit. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了减少在保护电路的检查中功率半导体元件的栅极的劣化。解决方案：功率半导体器件包括保护电路20，用于通过在将异常电压输入到IGBT 10的时候抑制IGBT 10的栅极端子G和电流感测端子S之间的电压来保护IGBT 10 闸门G从外面。保护电路20包括串联连接的齐纳二极管21和22。提供了用于电连接保护电路20的齐纳二极管21和22之间的连接点P1和用于分离以检查保护电路的端子电极T的布线40。版权所有（C）2008，JPO＆INPIT

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