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1. 发明授权

US5256580A Method of forming a light emitting diode 失效
标题翻译：形成发光二极管的方法
公开(公告)号：US5256580A
公开(公告)日：1993-10-26
申请号：US864101
申请日：1992-04-06
申请人： Craig A. Gaw , Ronald W. Slocumb , Curtis D. Moyer
发明人： Craig A. Gaw , Ronald W. Slocumb , Curtis D. Moyer
IPC分类号： H01L21/28 , H01L21/306 , H01L33/00 , H01L33/20 , H01L33/38 , H01L21/20 , H01L21/265
CPC分类号： H01L33/38 , H01L21/28 , H01L21/30612 , H01L33/0062 , H01L33/20
摘要： An optical semiconductor device is formed by using one controlled etch to form a "T" shaped contact structure on the device (20). The etch rate is controlled by judicious selection of materials to provide a cladding layer (17) that has a predetermined etch rate in hydrofluoric acid, a support layer (10) and a contact layer (18) that are not affected by hydrofluoric acid, a lift-off layer (19) that is dissolved by hydrofluoric acid, and a barrier layer (21). Dissolving of the lift-off layer (19) facilitates removing the barrier layer (21).
摘要翻译：通过使用一个受控蚀刻在器件（20）上形成“T”形接触结构来形成光学半导体器件。通过明智选择材料来控制蚀刻速率，以提供在氢氟酸中具有预定蚀刻速率的包覆层（17），不受氢氟酸影响的支撑层（10）和接触层（18），由氢氟酸溶解的剥离层（19）和阻挡层（21）。剥离层（19）的溶解有利于去除阻挡层（21）。

2. 发明授权

US4989050A Self aligned, substrate emitting LED 失效
标题翻译：自对准，衬底发射LED
公开(公告)号：US4989050A
公开(公告)日：1991-01-29
申请号：US399049
申请日：1989-08-28
申请人： Craig A. Gaw , Curtis D. Moyer
发明人： Craig A. Gaw , Curtis D. Moyer
IPC分类号： H01L33/00 , H01L33/38
CPC分类号： H01L33/38 , H01L33/0025 , H01L33/0062
摘要： A light emitting diode is provided comprising a substrate which is transparent to the emitted light upon which a plurality of semiconductor layers, including a quantum well active layer, are formed. The materials are chosen not only for their optical characteristics but also so that many of the layers act as etch stops for layers which are formed on top of them. In addition to operational semiconductor layes which form the light emitting diode, two sacrificial semiconductor layers are formed on the substrate which serve as masks during processing and are removed prior to device metallization. An initial pattern is formed in the uppermost semiconductor layer and is transferred down through lower layers using the etch stop layers and selective etches so that further photolithography steps are unnecessary. Electrodes are formed on one side of the device by conventional metal deposition techniques and are self aligned to the LED junction.
摘要翻译：提供了一种发光二极管，其包括对发射的光透明的衬底，在衬底上形成包括量子阱活性层的多个半导体层。这些材料不仅用于其光学特性，而且还使得许多层用作形成在它们之上的层的蚀刻停止。除了形成发光二极管的操作半导体层之外，在衬底上形成两个牺牲半导体层，其在处理期间用作掩模，并且在器件金属化之前被去除。在最上半导体层中形成初始图案，并且通过使用蚀刻停止层和选择性蚀刻的下层向下传送，使得不需要进一步的光刻步骤。电极通过常规的金属沉积技术形成在器件的一侧，并且与LED结自对准。

3. 发明授权

US5023503A Super high frequency oscillator/resonator 失效
标题翻译：超高频振荡器/谐振器
公开(公告)号：US5023503A
公开(公告)日：1991-06-11
申请号：US460454
申请日：1990-01-03
申请人： Ronald Legge , Curtis D. Moyer
发明人： Ronald Legge , Curtis D. Moyer
IPC分类号： H03B5/30 , H03H3/007 , H03H9/05 , H03H9/17 , H03H9/24 , H03H9/25 , H04R17/10
CPC分类号： H03H9/17
摘要： A method of filtering an AC signal using a piezoelectric beam is provided. A piezoelectric film is formed on a mechanical support and a portion of the piezoelectric film forms a beam which extends beyond the mechanical support so that a cavity is formed underneath the beam, and the beam is free to vibrate in the cavity at a resonant frequency when an acoustic wave is propagated in the piezoelectric layer.A depletion region is formed under a Schottky contact which serves as a drive electrode. An unfiltered AC signal is coupled to the drive electrode thereby establishing an acoustic wave when the unfiltered AC signal comprises a component at the resonant frequency. Surface charge on the piezoelectric film resulting from vibration of the beam allows the resonant frequency component of the unfiltered AC signal to pass through the depletion region. Alternatively, the resonant frequency component can be passed by a tunnel current through the cavity.
摘要翻译：提供了使用压电束对AC信号进行滤波的方法。在机械支架上形成压电薄膜，并且压电薄膜的一部分形成一个延伸超过机械支架的光束，从而在光束的下方形成空腔，并且光束以谐振频率自由地在空腔中振动，声波在压电层中传播。在用作驱动电极的肖特基接触下形成耗尽区。未过滤的AC信号耦合到驱动电极，从而当未滤波的AC信号包括谐振频率处的分量时建立声波。由光束的振动导致的压电膜上的表面电荷允许未滤波的AC信号的谐振频率分量通过耗尽区。或者，谐振频率分量可以通过隧道电流通过空腔。

4. 发明授权

US4959702A Si-GaP-Si heterojunction bipolar transistor (HBT) on Si substrate 失效
标题翻译： Si-GaP-Si异质结双极晶体管（HBT）
公开(公告)号：US4959702A
公开(公告)日：1990-09-25
申请号：US417417
申请日：1989-10-05
申请人： Curtis D. Moyer , Raymond K. Tsui
发明人： Curtis D. Moyer , Raymond K. Tsui
IPC分类号： H01L29/737
CPC分类号： H01L29/7378
摘要： A heterojunction bipolar transistor (HBT) is provided having a silicon substrate in which a conventional junction base is formed. A coherently strained layer of semiconductor material having a wider band gap than silicon, such as gallium phosphide, is formed over the base to form a first portion of an emitter multilayer. A second portion of the emitter multilayer comprises silicon which can be epitaxially grown on the coherently strained layer. A thin heteropotential barrier is thus formed at the base-emitter junction which preferentially allows electrons to move from emitter to base while significantly reducing hole current from base to emitter, thereby improving emitter injection efficiency and current gain.
摘要翻译：提供了具有其中形成常规接合基底的硅衬底的异质结双极晶体管（HBT）。在基底上形成具有比硅更宽带隙的诸如磷化镓的相干应变层的半导体材料以形成发射极多层的第一部分。发射极多层的第二部分包括可在相干应变层上外延生长的硅。因此，在基极 - 发射极结处形成薄的势能势垒，其优先地允许电子从发射极移动到基极，同时显着减少从基极到发射极的空穴电流，从而提高发射极注入效率和电流增益。

5. 发明授权

US08722432B2 Methods and system for on-chip decoder for array test 有权
标题翻译：用于阵列测试的片上解码器的方法和系统
公开(公告)号：US08722432B2
公开(公告)日：2014-05-13
申请号：US13259800
申请日：2010-02-23
申请人： Edward J. Bawolek , Curtis D. Moyer , Sameer M. Venugopal
发明人： Edward J. Bawolek , Curtis D. Moyer , Sameer M. Venugopal
IPC分类号： H01L21/00 , H01L21/66
CPC分类号： H01L22/00 , G09G3/006 , G09G2320/0295 , G09G2330/04 , G09G2330/10 , G09G2330/12 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides devices capable of testing the electrical performance of thin-film transistor backplane arrays and methods for their use.
摘要翻译：本发明提供能够测试薄膜晶体管背板阵列的电气性能的装置及其使用方法。

6. 发明授权

US6114802A Field emission device having stamped substrate and method 失效
标题翻译：具有冲压基板和方法的场致发射器件
公开(公告)号：US6114802A
公开(公告)日：2000-09-05
申请号：US808382
申请日：1997-02-28
申请人： Craig Amrine , Kenneth Dean , Curtis D. Moyer
发明人： Craig Amrine , Kenneth Dean , Curtis D. Moyer
IPC分类号： H01J3/02 , H01J29/02 , H01J19/24 , H01J29/04
CPC分类号： H01J3/022 , H01J29/028 , H01J2201/30423 , H01J2329/8615
摘要： A field emission device (400) includes a plastically-deformable, ceramic, stamped substrate (200) made from a plastically deformable ceramic, which in the preferred embodiment includes a calendered tape. The plastically-deformable, ceramic, stamped substrate (200) includes first and second opposed surfaces (202, 204) and defines apertures (206) in which are formed extraction electrodes (410). The field emission device (400) further includes an electron-emissive layer (418) being formed on the first opposed surface (202). Cathodes (420) are disposed on the electron-emissive layer (418) and cross the extraction electrodes (410) at an angle of 90.degree.. A method for fabricating said field emission device (400) includes stamping a layer (100) of the softened calendered tape with a die (300) to define the apertures (206) and grooves (208, 212, 214).
摘要翻译：场致发射器件（400）包括由可塑性变形的陶瓷制成的可塑性变形的陶瓷冲压衬底（200），在优选实施例中，其包括压延带。塑性可变形的陶瓷冲压衬底（200）包括第一和第二相对表面（202,204）并且限定孔（206），其中形成有引出电极（410）。场发射器件（400）还包括形成在第一相对表面（202）上的电子发射层（418）。阴极（420）设置在电子发射层（418）上，并以90°的角度与提取电极（410）交叉。制造所述场发射装置（400）的方法包括用模具（300）冲压软化的压延带的层（100）以限定孔（206）和凹槽（208,212,214）。

7. 发明授权

US5811927A Method for affixing spacers within a flat panel display 失效
标题翻译：在平板显示器内固定间隔物的方法
公开(公告)号：US5811927A
公开(公告)日：1998-09-22
申请号：US667556
申请日：1996-06-21
申请人： Clifford L. Anderson , Curtis D. Moyer
发明人： Clifford L. Anderson , Curtis D. Moyer
IPC分类号： H01J29/87 , G09F9/30 , H01J9/18 , H01J9/24 , H01J31/12
CPC分类号： H01J9/242 , H01J31/123 , H01J2329/8625 , H01J2329/865 , H01J2329/866
摘要： A method for affixing a plurality of spacers (102) within a field emission display (160) is disclosed. The method includes the steps of: (i) providing a plurality of members (104), (ii) coating an edge (106) of each of the plurality of members (104) with a metal to provide a bonding layer (108), (iii) forming a metallic bonding pad (132) on the inner surface of an anode (120) to provide a modified anode (130), (iv) affixing a plurality of metallic compliant members (112) to the bonding layer (108) by using ball bonding techniques, and (v) affixing the metallic compliant members (112) to the metallic bonding pad (132), while positioning the spacer (102) perpendicularly with respect to the modified anode (130), by using thermocompression metal bonding techniques.
摘要翻译：公开了一种用于在场发射显示器（160）内固定多个间隔物（102）的方法。该方法包括以下步骤：（i）提供多个构件（104），（ii）用金属涂覆多个构件（104）中的每一个的边缘（106）以提供结合层（108），（iii）在阳极（120）的内表面上形成金属焊盘（132）以提供改性阳极（130），（iv）将多个金属柔性构件（112）固定到所述粘合层（108）通过使用球接合技术，并且（v）将金属柔性构件（112）固定到金属接合垫（132）上，同时通过使用热压金属接合将间隔件（102）相对于改性阳极（130）垂直定位技术

8. 发明授权

US5760535A Field emission device 失效
标题翻译：场发射装置
公开(公告)号：US5760535A
公开(公告)日：1998-06-02
申请号：US740583
申请日：1996-10-31
申请人： Curtis D. Moyer , John Song , James E. Jaskie , Lawrence N. Dworsky , Scott K. Ageno , Robert P. Nee
发明人： Curtis D. Moyer , John Song , James E. Jaskie , Lawrence N. Dworsky , Scott K. Ageno , Robert P. Nee
IPC分类号： H01J1/304 , H01J3/02 , H01J1/02
CPC分类号： H01J3/022 , H01J2201/025
摘要： A field emission device (200, 300, 400, 500) includes a supporting substrate (210, 310, 410, 510), a cathode (215, 315, 415, 515) formed thereon, a plurality of electron emitters (270, 370, 470, 570) and a plurality of gate extraction electrodes (250, 350, 450, 550) proximately disposed to the plurality of electron emitters (270, 370, 470, 570) for effecting electron emission therefrom, a major dielectric surface (248, 348, 448, 548) disposed between the plurality of gate extraction electrodes (250, 350, 450, 550), a charge dissipation layer (252, 352, 452, 552) formed on the major dielectric surface (248, 348, 448, 548), and an anode (280, 380, 480, 580) spaced from the gate extraction electrodes (250, 350, 450, 550).
摘要翻译：场致发射器件（200,300,400,500）包括支撑衬底（210,310,410,510），形成在其上的阴极（215,315,415,515），多个电子发射器（270,370 ，多个栅极引出电极（250,350,450,550），所述多个栅极引出电极（250,350,450,550）近似地设置在所述多个电子发射器（270,370,470,570）中，用于从其发射电子发射，主电介质表面（248 ，348,448,548），其布置在所述多个栅极引出电极（250,350,450,550）之间，形成在所述主电介质表面（248,348,448）上的电荷耗散层（252,352,452,552），548）以及与栅极引出电极（250,350,450,550）间隔开的阳极（280,380,480,580）。

9. 发明授权

US5345141A Single substrate, vacuum fluorescent display 失效
标题翻译：单基板，真空荧光显示
公开(公告)号：US5345141A
公开(公告)日：1994-09-06
申请号：US45407
申请日：1993-03-29
申请人： Curtis D. Moyer , John Song , James E. Jaskie
发明人： Curtis D. Moyer , John Song , James E. Jaskie
IPC分类号： H01J9/02 , H01J1/304 , H01J9/14 , H01J9/22 , H01J29/04 , H01J29/18 , H01J31/12 , H01J1/62
CPC分类号： H01J1/3042 , H01J31/127 , H01J2201/30426 , H01J2201/30457 , H01J2201/319
摘要： A single substrate, vacuum fluorescent display including a first layer of electrically conductive material positioned on a supporting substrate and a light emitting layer including phosphor positioned on the first layer. A second layer of electrically conductive material is supported on the substrate and electrically insulated from the first layer. An electron emitting layer of low work function material is positioned on the second layer and further positioned so that emitted electrons strike the light emitting layer. Since both the electron emitting and the light emitting layers are supported on the substrate, an encapsulating window is simple and easy to construct. Integrated drivers are optionally formed in the supporting substrate.
摘要翻译：单个基板，真空荧光显示器，其包括位于支撑基板上的第一导电材料层和包含位于第一层上的荧光体的发光层。第二层导电材料被支撑在基底上并与第一层电绝缘。低功函数材料的电子发射层位于第二层上，并进一步定位成使得发射的电子撞击发光层。由于电子发射层和发光层都被支撑在基板上，所以封装窗口简单易于构造。集成驱动器可选地形成在支撑基板中。

10. 发明授权

US06626720B1 Method of manufacturing vacuum gap dielectric field emission triode and apparatus 失效
标题翻译：制造真空间隙介质场发射三极管及其装置的方法
公开(公告)号：US06626720B1
公开(公告)日：2003-09-30
申请号：US09656912
申请日：2000-09-07
申请人： Emmett M. Howard , Curtis D. Moyer , Joseph Justin Bonanno , Robert H. Reuss
发明人： Emmett M. Howard , Curtis D. Moyer , Joseph Justin Bonanno , Robert H. Reuss
IPC分类号： H01J902
CPC分类号： B82Y10/00 , H01J3/022 , H01J9/025 , H01J2201/30469
摘要： A vacuum gap dielectric field emission triode and a method of fabrication include a conductive layer positioned on a supporting substrate and an emitter positioned on the conductive layer. A gate metal layer electrically separated from the conductive layer defines a metal bridge gate surrounding the emitter and separated from the emitter by a substantially fixed distance. The gate metal layer defines a gate opening through the metal bridge gate overlying the emitter. An anode is positioned in spaced relationship to the gate metal layer and the triode is sealed in a substantial vacuum so that the emitter is separated from the metal bridge by the substantial vacuum and the metal bridge is separated from the anode by the substantial vacuum.
摘要翻译：真空间隙介质场发射三极管和制造方法包括位于支撑衬底上的导电层和位于导电层上的发射极。与导电层电分离的栅极金属层限定了围绕发射极并与发射极分离大致固定距离的金属桥栅。栅极金属层限定通过覆盖发射极的金属桥接栅极的栅极开口。阳极以与栅极金属层隔开的关系定位，并且三极管被密封在实质的真空中，使得发射极通过实质的真空从金属桥分离，并且金属桥与实际真空下的阳极分离。

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