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1. 发明授权

US5256580A Method of forming a light emitting diode 失效
标题翻译：形成发光二极管的方法
公开(公告)号：US5256580A
公开(公告)日：1993-10-26
申请号：US864101
申请日：1992-04-06
申请人： Craig A. Gaw , Ronald W. Slocumb , Curtis D. Moyer
发明人： Craig A. Gaw , Ronald W. Slocumb , Curtis D. Moyer
IPC分类号： H01L21/28 , H01L21/306 , H01L33/00 , H01L33/20 , H01L33/38 , H01L21/20 , H01L21/265
CPC分类号： H01L33/38 , H01L21/28 , H01L21/30612 , H01L33/0062 , H01L33/20
摘要： An optical semiconductor device is formed by using one controlled etch to form a "T" shaped contact structure on the device (20). The etch rate is controlled by judicious selection of materials to provide a cladding layer (17) that has a predetermined etch rate in hydrofluoric acid, a support layer (10) and a contact layer (18) that are not affected by hydrofluoric acid, a lift-off layer (19) that is dissolved by hydrofluoric acid, and a barrier layer (21). Dissolving of the lift-off layer (19) facilitates removing the barrier layer (21).
摘要翻译：通过使用一个受控蚀刻在器件（20）上形成“T”形接触结构来形成光学半导体器件。通过明智选择材料来控制蚀刻速率，以提供在氢氟酸中具有预定蚀刻速率的包覆层（17），不受氢氟酸影响的支撑层（10）和接触层（18），由氢氟酸溶解的剥离层（19）和阻挡层（21）。剥离层（19）的溶解有利于去除阻挡层（21）。

2. 发明授权

US4989050A Self aligned, substrate emitting LED 失效
标题翻译：自对准，衬底发射LED
公开(公告)号：US4989050A
公开(公告)日：1991-01-29
申请号：US399049
申请日：1989-08-28
申请人： Craig A. Gaw , Curtis D. Moyer
发明人： Craig A. Gaw , Curtis D. Moyer
IPC分类号： H01L33/00 , H01L33/38
CPC分类号： H01L33/38 , H01L33/0025 , H01L33/0062
摘要： A light emitting diode is provided comprising a substrate which is transparent to the emitted light upon which a plurality of semiconductor layers, including a quantum well active layer, are formed. The materials are chosen not only for their optical characteristics but also so that many of the layers act as etch stops for layers which are formed on top of them. In addition to operational semiconductor layes which form the light emitting diode, two sacrificial semiconductor layers are formed on the substrate which serve as masks during processing and are removed prior to device metallization. An initial pattern is formed in the uppermost semiconductor layer and is transferred down through lower layers using the etch stop layers and selective etches so that further photolithography steps are unnecessary. Electrodes are formed on one side of the device by conventional metal deposition techniques and are self aligned to the LED junction.
摘要翻译：提供了一种发光二极管，其包括对发射的光透明的衬底，在衬底上形成包括量子阱活性层的多个半导体层。这些材料不仅用于其光学特性，而且还使得许多层用作形成在它们之上的层的蚀刻停止。除了形成发光二极管的操作半导体层之外，在衬底上形成两个牺牲半导体层，其在处理期间用作掩模，并且在器件金属化之前被去除。在最上半导体层中形成初始图案，并且通过使用蚀刻停止层和选择性蚀刻的下层向下传送，使得不需要进一步的光刻步骤。电极通过常规的金属沉积技术形成在器件的一侧，并且与LED结自对准。

3. 发明授权

US5358880A Method of manufacturing closed cavity LED 失效
标题翻译：封闭式LED的制造方法
公开(公告)号：US5358880A
公开(公告)日：1994-10-25
申请号：US44787
申请日：1993-04-12
申请人： Michael S. Lebby , Chan-Long Shieh , Craig A. Gaw
发明人： Michael S. Lebby , Chan-Long Shieh , Craig A. Gaw
IPC分类号： H01L33/00 , H01L33/40 , H01L33/42 , H01L21/265
CPC分类号： H01L33/42 , H01L33/0066 , H01L33/405 , Y10S438/977
摘要： A method of manufacturing a closed cavity LED including forming, on a substrate, a short cavity LED with electrically conductive layers on opposite ends. Depositing a transparent conductive layer of material over one electrically conductive layer and affixing glass or a diamond film over the transparent conductive layer to define and protect a light output area. Removing the substrate and covering the top and sides of the cavity with dielectric material and contact metal. The metal being in contact with the transparent conductive layer and the other electrical contact layer. Thus, a reflector covers the cavity in all directions except the light output area to increase external efficiency.
摘要翻译：一种制造封闭腔LED的方法，包括在衬底上形成在相对端上具有导电层的短腔LED。在一个导电层上沉积材料的透明导电层，并将玻璃或金刚石膜固定在透明导电层上，以限定和保护光输出区域。用介质材料和接触金属去除基板并覆盖空腔的顶部和侧面。金属与透明导电层和另一个电接触层接触。因此，除了光输出区域之外，反射器在所有方向上覆盖空腔以增加外部效率。

4. 发明授权

US5270245A Method of forming a light emitting diode 失效
标题翻译：形成发光二极管的方法
公开(公告)号：US5270245A
公开(公告)日：1993-12-14
申请号：US982525
申请日：1992-11-27
申请人： Craig A. Gaw , Chan-Long Shieh
发明人： Craig A. Gaw , Chan-Long Shieh
IPC分类号： H01L21/306 , H01L33/00 , H01L33/02 , H01L33/38 , H01L33/40 , H01L21/20 , H01L21/203
CPC分类号： H01L33/38 , H01L21/30612 , H01L33/0062 , H01L2933/0016 , H01L33/02 , H01L33/40
摘要： A method of forming a III-V semiconductor device (10, 20) utilizes a III-V semiconductor substrate (11) having a plurality of III-V semiconductor layers (12, 14, 15, 16, 17). A pattern layer ( 19, 24) is formed on the plurality of layers (12, 14, 15, 16, 17). The plurality of III-V semiconductor layers (12, 14, 15, 16, 17) is etched with an isotropic etch that does not etch the pattern layer (19, 24). The isotropic etch undercuts the pattern layer (19, 24) and exposes an area for forming ohmic contacts on the plurality of III-V semiconductor layers. The pattern layer (19, 24) is used as a mask while depositing ohmic contact material (22, 23, 28) onto the area for forming ohmic contacts.
摘要翻译：形成III-V半导体器件（10,20）的方法利用具有多个III-V半导体层（12,14,15,16,17）的III-V半导体衬底（11）。在多个层（12,14,15,16,17）上形成图形层（19,24）。通过不蚀刻图案层（19,24）的各向同性蚀刻蚀刻多个III-V半导体层（12,14,15,16,17）。各向同性蚀刻使图案层（19,24）下切，并在多个III-V半导体层上露出用于形成欧姆接触的区域。将图形层（19,24）用作掩模，同时将欧姆接触材料（22,23,28）沉积在用于形成欧姆接触的区域上。

5. 发明授权

US5237633A Monolithic optoelectronic integrated circuit 失效
标题翻译：单片光电集成电路
公开(公告)号：US5237633A
公开(公告)日：1993-08-17
申请号：US791708
申请日：1991-11-14
申请人： Craig A. Gaw , Paige M. Holm , Kwong-Han H. Leung , George W. Rhyne , Daniel L. Rode
发明人： Craig A. Gaw , Paige M. Holm , Kwong-Han H. Leung , George W. Rhyne , Daniel L. Rode
IPC分类号： H04B10/12 , H05B33/08
CPC分类号： H05B33/0818 , H05B33/0803
摘要： A monolithic optoelectronic integrated circuit having an optical emission portion (18) and a drive portion (11, or 22 and 21). The drive portion is capable of accepting TTL and standard CMOS logic voltage levels. In a first embodiment, the monolithic optoelectronic integrated circuit (10) has a light emitting diode (18) driven by a dual gate FET (11). In a second embodiment, the monolithic optoelectronic integrated circuit (20) has a light emitting diode (18) driven by two FETs (22 and 21). In each embodiment (10 or 20), a gate (13 or 23) of the respective drive circuit accepts the TTL or standard CMOS logic voltage. Further, in each embodiment current limiting is accomplished by coupling a gate with the source of the FET (11 or 22). Thus, the output of the light emitting diode (18, 18) is controlled by an input signal to the drive circuit.
摘要翻译：具有光发射部分（18）和驱动部分（11或22和21）的单片光电集成电路。驱动部分能够接受TTL和标准CMOS逻辑电压电平。在第一实施例中，单片光电集成电路（10）具有由双栅极FET（11）驱动的发光二极管（18）。在第二实施例中，单片光电集成电路（20）具有由两个FET（22和21）驱动的发光二极管（18）。在每个实施例（10或20）中，相应驱动电路的栅极（13或23）接受TTL或标准CMOS逻辑电压。此外，在每个实施例中，通过将栅极与FET（11或22）的源耦合来实现电流限制。因此，发光二极管（18,18）的输出由驱动电路的输入信号控制。

6. 发明授权

US5574744A Optical coupler 失效
标题翻译：光耦合器
公开(公告)号：US5574744A
公开(公告)日：1996-11-12
申请号：US383151
申请日：1995-02-03
申请人： Craig A. Gaw , Chan-Long Shieh , Michael S. Lebby
发明人： Craig A. Gaw , Chan-Long Shieh , Michael S. Lebby
IPC分类号： H01L31/10 , G02B6/12 , H01L31/12 , H01L31/173 , H01S5/00 , H01S5/026 , H01S5/183 , H01S3/18
CPC分类号： G02B6/12004 , H01L31/173 , H01S5/0264 , H01S5/18308 , H01S5/2059 , H01S5/423
摘要： A substrate having a first surface and a second surface, the first surface having a vertical cavity surface emitting laser disposed therein and second surface having a photodetector integrated disposed therein, wherein the vertical cavity surface emitting laser directs a light signal toward the photodetector.
摘要翻译：一种具有第一表面和第二表面的衬底，所述第一表面具有设置在其中的垂直腔表面发射激光器，并且具有集成在其中的光电检测器的第二表面，其中所述垂直腔表面发射激光器将光信号引导到所述光电检测器。

7. 发明授权

US4864370A Electrical contact for an LED 失效
标题翻译： LED的电接触
公开(公告)号：US4864370A
公开(公告)日：1989-09-05
申请号：US122160
申请日：1987-11-16
申请人： Craig A. Gaw , Daniel L. Rode
发明人： Craig A. Gaw , Daniel L. Rode
IPC分类号： H01L33/38
CPC分类号： H01L33/38
摘要： A high efficiency light emitting diode is achieved through the use of a patterned metal contact. The metal contact is insulated from the structure of the light emitting diode to prevent current flow and subsequent light generation underneath the electrical bond pad. This shifts the drive current out to the patterned portion of the bond pad or metal contact.
摘要翻译：通过使用图案化金属接触来实现高效率发光二极管。金属触点与发光二极管的结构绝缘，以防止电流流动并在电接合焊盘下面产生随后的光。这将驱动电流转移到接合焊盘或金属触点的图案化部分。

8. 发明授权

US09905658B2 Transistors with field plates resistant to field plate material migration and methods of their fabrication 有权
公开(公告)号：US09905658B2
公开(公告)日：2018-02-27
申请号：US14090327
申请日：2013-11-26
申请人： Darrell G. Hill , Stephen H. Kilgore , Craig A. Gaw
发明人： Darrell G. Hill , Stephen H. Kilgore , Craig A. Gaw
IPC分类号： H01L29/40 , H01L29/778 , H01L29/49 , H01L29/66 , H01L29/20
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/4958 , H01L29/4966 , H01L29/66462 , H01L29/7787
摘要： An embodiment of a transistor includes a semiconductor substrate, spaced-apart source and drain electrodes coupled to the semiconductor substrate, a gate electrode coupled to the semiconductor substrate between the source and drain electrodes, a dielectric layer over the gate electrode and at least a portion of the semiconductor substrate, and a field plate structure over the dielectric layer, wherein the field plate structure includes a gold-containing material and one or more migration inhibiting materials.

9. 发明授权

US5995531A VCSEL having polarization control and method of making same 失效
标题翻译：具有偏振控制的VCSEL及其制造方法
公开(公告)号：US5995531A
公开(公告)日：1999-11-30
申请号：US963624
申请日：1997-11-04
申请人： Craig A. Gaw , Wenbin Jiang , Benjamin W. Gable
发明人： Craig A. Gaw , Wenbin Jiang , Benjamin W. Gable
IPC分类号： H01S5/183 , H01S5/20 , H01S3/08 , H01L21/20
CPC分类号： H01S5/18355 , H01S5/18308 , H01S5/18327 , H01S5/18338 , H01S5/2063
摘要： A vertical cavity surface emitting laser with polarization control includes a first stack of distributed Bragg reflectors positioned on a substrate with an active region including a first cladding region and a second cladding region positioned on opposite sides of an active area overlying the first stack of distributed Bragg reflectors A second stack of distributed Bragg reflectors is positioned on the active region. The second stack has an ion implantation region formed to control and define a lasing threshold of the laser. The second stack further is formed into a ridge with the ridge being etched into the ion implantation region to form an elongated shape so as to polarize light emitted by the second stack of distributed Bragg reflectors
摘要翻译：具有偏振控制的垂直腔表面发射激光器包括位于衬底上的分布式布拉格反射器的第一叠层，其具有有源区域，该有源区域包括第一覆层区域和位于覆盖分布布拉格的第一堆叠层的有源区域相对侧上的第二覆盖区域反射器第二层分布式布拉格反射器位于有源区上。第二堆叠具有形成为控制和限定激光器的激光阈值的离子注入区域。第二堆叠进一步形成为脊，其中脊被蚀刻到离子注入区域中以形成细长形状，以便使由分布布拉格反射器的第二堆叠发射的光偏振

10. 发明授权

US5939773A Semiconductor laser package including a lead frame and plastic resin housing 失效
标题翻译：半导体激光器封装包括引线框架和塑料树脂外壳
公开(公告)号：US5939773A
公开(公告)日：1999-08-17
申请号：US692355
申请日：1996-08-05
申请人： Wenbin Jiang , Michael S. Lebby , Craig A. Gaw
发明人： Wenbin Jiang , Michael S. Lebby , Craig A. Gaw
IPC分类号： H01S5/022 , H01L23/495 , H01L23/02 , H01L23/28
CPC分类号： H01S5/02244 , H01S5/02228 , H01L2924/0002 , H01S5/02288 , H01S5/0683 , H01S5/183
摘要： A semiconductor laser package including a laser chip mounted to a leadframe, and a plastic resin housing for encapsulating the laser chip. The laser chip composed of a vertical cavity surface emitting laser and a photodetector. The vertical cavity surface emitting laser generating an emission along a path. The leadframe being positioned a fixed distance from an emission window formed in the plastic resin housing. The laser chip mounted in precise z-axis alignment from the emission window utilizing the leadframe as a dimensional reference point, with the bump height compensating for variations in laser chip dimension. An optical element is optionally positioned in the path to reflect a portion of the emission.
摘要翻译：一种半导体激光器封装，包括安装在引线框架上的激光芯片和用于封装激光芯片的塑料树脂外壳。激光芯片由垂直腔表面发射激光器和光电检测器组成。垂直腔表面发射激光器沿着路径产生发射。引线框架与形成在塑料树脂壳体中的发射窗口定位一定距离。激光芯片以发射窗口的精确z轴对准，利用引线框架作为尺寸参考点，凸起高度补偿了激光芯片尺寸的变化。光学元件可选地位于路径中以反映发射的一部分。

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