专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5358880A Method of manufacturing closed cavity LED 失效
标题翻译：封闭式LED的制造方法
公开(公告)号：US5358880A
公开(公告)日：1994-10-25
申请号：US44787
申请日：1993-04-12
申请人： Michael S. Lebby , Chan-Long Shieh , Craig A. Gaw
发明人： Michael S. Lebby , Chan-Long Shieh , Craig A. Gaw
IPC分类号： H01L33/00 , H01L33/40 , H01L33/42 , H01L21/265
CPC分类号： H01L33/42 , H01L33/0066 , H01L33/405 , Y10S438/977
摘要： A method of manufacturing a closed cavity LED including forming, on a substrate, a short cavity LED with electrically conductive layers on opposite ends. Depositing a transparent conductive layer of material over one electrically conductive layer and affixing glass or a diamond film over the transparent conductive layer to define and protect a light output area. Removing the substrate and covering the top and sides of the cavity with dielectric material and contact metal. The metal being in contact with the transparent conductive layer and the other electrical contact layer. Thus, a reflector covers the cavity in all directions except the light output area to increase external efficiency.
摘要翻译：一种制造封闭腔LED的方法，包括在衬底上形成在相对端上具有导电层的短腔LED。在一个导电层上沉积材料的透明导电层，并将玻璃或金刚石膜固定在透明导电层上，以限定和保护光输出区域。用介质材料和接触金属去除基板并覆盖空腔的顶部和侧面。金属与透明导电层和另一个电接触层接触。因此，除了光输出区域之外，反射器在所有方向上覆盖空腔以增加外部效率。

2. 发明授权

US5574744A Optical coupler 失效
标题翻译：光耦合器
公开(公告)号：US5574744A
公开(公告)日：1996-11-12
申请号：US383151
申请日：1995-02-03
申请人： Craig A. Gaw , Chan-Long Shieh , Michael S. Lebby
发明人： Craig A. Gaw , Chan-Long Shieh , Michael S. Lebby
IPC分类号： H01L31/10 , G02B6/12 , H01L31/12 , H01L31/173 , H01S5/00 , H01S5/026 , H01S5/183 , H01S3/18
CPC分类号： G02B6/12004 , H01L31/173 , H01S5/0264 , H01S5/18308 , H01S5/2059 , H01S5/423
摘要： A substrate having a first surface and a second surface, the first surface having a vertical cavity surface emitting laser disposed therein and second surface having a photodetector integrated disposed therein, wherein the vertical cavity surface emitting laser directs a light signal toward the photodetector.
摘要翻译：一种具有第一表面和第二表面的衬底，所述第一表面具有设置在其中的垂直腔表面发射激光器，并且具有集成在其中的光电检测器的第二表面，其中所述垂直腔表面发射激光器将光信号引导到所述光电检测器。

3. 发明授权

US6156582A Method of fabricating top emitting ridge VCSEL with self-aligned contact and sidewall reflector 失效
标题翻译：制造具有自对准接触和侧壁反射器的顶部发射脊VCSEL的方法
公开(公告)号：US6156582A
公开(公告)日：2000-12-05
申请号：US75934
申请日：1993-06-14
申请人： Chan-Long Shieh , Michael S. Lebby
发明人： Chan-Long Shieh , Michael S. Lebby
IPC分类号： H01L21/302 , H01L21/3065 , H01S5/00 , H01S5/042 , H01S5/183 , H01S5/20 , H01L21/00
CPC分类号： H01S5/18344 , H01S5/0425 , H01S5/2081
摘要： A method of fabricating a ridge VCSEL having a first stack of mirrors, a second stack of mirrors and an active area sandwiched therebetween, including the steps of depositing a metal layer, an etchable layer and a masking layer on the second stack, removing portions of the masking layer, the etchable layer and the metal layer to form a mask, using the mask to etch the second stack to form a mesa, removing portions of the etchable layer to expose the metal layer, depositing an additional metal layer on the side of the mesa and the exposed portion of the metal layer to define a light emitting area, removing the etchable and masking layers to expose the metal layer in the light emitting area, and removing the exposed portion of the metal layer to expose the light emitting area.
摘要翻译：一种制造具有第一层反射镜，第二层反射镜和夹在其间的有源区域的脊VCSEL的方法，包括以下步骤：在第二堆叠上沉积金属层，可刻蚀层和掩模层，掩模层，可蚀刻层和金属层以形成掩模，使用掩模蚀刻第二堆叠以形成台面，去除可蚀刻层的部分以暴露金属层，在金属层的侧面上沉积额外的金属层金属层的台面和暴露部分以限定发光区域，去除可蚀刻和掩蔽层以暴露发光区域中的金属层，以及去除金属层的暴露部分以露出发光区域。

4. 发明授权

US5468656A Method of making a VCSEL 失效
标题翻译：制造VCSEL的方法
公开(公告)号：US5468656A
公开(公告)日：1995-11-21
申请号：US346558
申请日：1994-11-29
申请人： Chan-Long Shieh , Michael S. Lebby , John Lungo
发明人： Chan-Long Shieh , Michael S. Lebby , John Lungo
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183 , H01S5/20 , H01L21/265
CPC分类号： H01S5/18308 , H01S5/0422 , H01S5/2063 , H01S5/2081
摘要： A substrate with a surface, the surface having disposed thereon a first stack of distributed Bragg reflectors, an active area, a second stack of distributed Bragg reflectors, a contact region, and a dielectric layer is provided. A first isolation trench is formed that extends through the dielectric layer, the contact region, and into a portion of the second stack of distributed Bragg reflectors. A dielectric layer is disposed on the substrate. A second isolation trench is formed through the nitride layer, the contact region, the second stack of distributed Bragg reflectors, the active region and a portion of the first stack of distributed Bragg reflectors, wherein the second isolation trench encircles the first isolation trench. A first electrical contact is formed on the second stack of distributed Bragg reflectors and a second electrical contact is formed on the contact region.
摘要翻译：具有表面的基板，其表面设置有分布式布拉格反射器的第一叠层，有源区，分布布拉格反射器的第二叠层，接触区和电介质层。形成第一隔离沟槽，其延伸穿过电介质层，接触区域，并进入分布式布拉格反射器的第二层叠体的一部分。电介质层设置在基板上。通过氮化物层，接触区域，分布布拉格反射器的第二堆叠，有源区域和分布布拉格反射器的第一叠层的一部分形成第二隔离沟槽，其中第二隔离沟槽环绕第一隔离沟槽。分布式布拉格反射器的第二堆叠上形成第一电接触，并且在接触区域上形成第二电接触。

5. 发明授权

US5388120A VCSEL with unstable resonator 失效
标题翻译： VCSEL具有不稳定的谐振器
公开(公告)号：US5388120A
公开(公告)日：1995-02-07
申请号：US124065
申请日：1993-09-21
申请人： Donald E. Ackley , Chan-Long Shieh , Michael S. Lebby
发明人： Donald E. Ackley , Chan-Long Shieh , Michael S. Lebby
IPC分类号： H01S5/10 , H01S5/183 , H01S3/08
CPC分类号： H01S5/18391 , H01S2301/166 , H01S5/1089 , H01S5/18305 , H01S5/18388
摘要： A vertical cavity laser with unstable resonator including a substrate having opposed major surfaces with a first semiconductor mirror stack positioned on one major surface of the substrate, an active region positioned on the first stack and a second semiconductor mirror stack positioned on the active region so as to sandwich the active region between the first and second stacks. Layers of the second stack being etched so as to spatially modulate the thickness of the second stack such that reflectivity is reduced in a central portion of the second stack and increases toward an edge thereof.
摘要翻译：一种具有不稳定谐振器的垂直腔体激光器，其包括具有相对主表面的衬底，其具有位于衬底的一个主表面上的第一半导体镜叠层，位于第一堆叠上的有源区域和位于有源区域上的第二半导体反射镜堆叠，以将活动区域夹在第一和第二堆叠之间。蚀刻第二叠层的层以空间地调制第二堆叠的厚度，使得第二堆叠的中心部分的反射率减小，并朝向其边缘增加。

6. 发明授权

US6097748A Vertical cavity surface emitting laser semiconductor chip with integrated drivers and photodetectors and method of fabrication 失效
标题翻译：具有集成驱动器和光电探测器的垂直腔表面发射激光半导体芯片及其制造方法
公开(公告)号：US6097748A
公开(公告)日：2000-08-01
申请号：US80152
申请日：1998-05-18
申请人： Rong-Ting Huang , Chan-Long Shieh , Michael S. Lebby
发明人： Rong-Ting Huang , Chan-Long Shieh , Michael S. Lebby
IPC分类号： H01S5/026 , H01S5/183 , H01S3/19
CPC分类号： H01S5/0262 , H01S5/0261 , H01S5/0264 , H01S5/183
摘要： A vertical cavity surface emitting laser semiconductor chip including a vertical cavity surface emitting laser (VCSEL) formed on a substrate, a photodetector, integrated with the vertical cavity surface emitting laser for automatic power control (APC) of the vertical cavity surface emitting laser and a driver circuit, integrated with the vertical cavity surface emitting laser and the photodetector. The VCSEL, photodetector and driver circuit are integrated by utilizing a monolithic polysilicon layer. The driver circuit is characterized as a CMOS driver circuit, capable of receiving feedback from the photodetector and adjusting the output power of the vertical cavity surface emitting laser in response to the feedback, thus achieving APC of the VCSEL.
摘要翻译：一种垂直腔表面发射激光半导体芯片，包括形成在衬底上的垂直腔表面发射激光器（VCSEL），与用于垂直腔表面发射激光器的自动功率控制（APC）的垂直腔表面发射激光器集成的光电检测器，驱动电路，与垂直腔表面发射激光器和光电检测器集成。 VCSEL，光电检测器和驱动电路通过利用单片多晶硅层进行集成。驱动器电路的特征在于CMOS驱动电路，其能够接收来自光电检测器的反馈并且响应于反馈调整垂直腔表面发射激光器的输出功率，从而实现VCSEL的APC。

7. 发明授权

US5710441A Microcavity LED with photon recycling 失效
标题翻译：微腔LED与光子回收
公开(公告)号：US5710441A
公开(公告)日：1998-01-20
申请号：US550147
申请日：1995-10-30
申请人： Donald E. Ackley , Chan-Long Shieh , Michael S. Lebby
发明人： Donald E. Ackley , Chan-Long Shieh , Michael S. Lebby
IPC分类号： H01L33/10 , H01L33/40 , H01L33/46 , H01L33/00 , H01S3/08 , H01S3/19
CPC分类号： H01L33/105 , H01L33/405 , H01L33/465
摘要： A microcavity LED with photon recycling including a substrate having at least one layer of material positioned thereon, and a first cladding layer, a second cladding layer and an active region sandwiched therebetween forming a mesa on the layer of material. The mesa has generally vertical sides and an upper surface with an electrically conductive and light reflective system positioned on the vertical sides of the mesa and partially covering the upper surface to form a first electrical contact for the LED, the electrically conductive and light reflective system defining a centrally located light emitting opening on the surface of the mesa, the mesa having a diametric dimension of the surface greater than one time larger than a diametric dimension of the opening.
摘要翻译：一种具有光子再循环的微腔LED，其包括具有位于其上的至少一层材料的基板，以及夹在其之间的第一包覆层，第二包层和有源区域，在该层材料上形成台面。台面具有大致垂直的侧面和上表面，其具有定位在台面的垂直侧上的导电和光反射系统，并且部分地覆盖上表面以形成用于LED的第一电接触件，导电和光反射系统限定在台面的表面上的位于中心的发光开口，台面具有比开口的直径尺寸大一倍的表面的直径尺寸。

8. 发明授权

US5654228A VCSEL having a self-aligned heat sink and method of making 失效
标题翻译： VCSEL具有自对准散热器和制造方法
公开(公告)号：US5654228A
公开(公告)日：1997-08-05
申请号：US407061
申请日：1995-03-17
申请人： Chan-Long Shieh , John Lungo , Michael S. Lebby
发明人： Chan-Long Shieh , John Lungo , Michael S. Lebby
IPC分类号： H01S5/024 , H01S5/042 , H01S5/183 , H01L21/20
CPC分类号： H01S5/18344 , H01S5/0425 , H01S2301/176 , H01S5/02476 , H01S5/2081
摘要： A substrate (102) having a surface (103) with a first stack of distributed Bragg reflectors (106), a first cladding region (107), an active region (108), a second cladding region (109), a second stack of distributed Bragg reflectors (110), and a contact region (111) is provided. A mesa (131) with a surface (133) and a trench (136) is formed. A first dielectric layer (122) is formed overlying substrate (102) and covering a portion of trench (136). A second dielectric layer (128) is formed on surface (133) of mesa (131). A seed layer (126) having a pattern is formed, with the pattern of seed layer (126) having an opening on a portion of second dielectric layer (128) of mesa (131). A metal is selectively plated on seed layer (126), thereby generating a layer (204) on seed layer (126) for removal of heat from VCSEL (101).
摘要翻译：具有表面（103）的基板（102）具有分布布拉格反射器（106）的第一叠层，第一包层区域（107），有源区域（108），第二包层区域（109）分布式布拉格反射器（110）和接触区域（111）。形成具有表面（133）和沟槽（136）的台面（131）。覆盖衬底（102）并覆盖沟槽（136）的一部分的第一介电层（122）形成。在台面（131）的表面（133）上形成第二电介质层（128）。形成具有图案的种子层（126），种子层（126）的图案在台面（131）的第二介电层（128）的一部分上具有开口。金属被选择性地电镀在种子层（126）上，从而在种子层（126）上产生用于从VCSEL（101）去除热量的层（204）。

9. 发明授权

US5478774A Method of fabricating patterned-mirror VCSELs using selective growth 失效
标题翻译：使用选择性生长制造图案镜VCSEL的方法
公开(公告)号：US5478774A
公开(公告)日：1995-12-26
申请号：US261276
申请日：1994-06-15
申请人： Donald E. Ackley , Piotr Grodzinski , Michael S. Lebby , Hsing-Chung Lee , Chan-Long Shieh
发明人： Donald E. Ackley , Piotr Grodzinski , Michael S. Lebby , Hsing-Chung Lee , Chan-Long Shieh
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183 , H01S5/22 , H01L21/20
CPC分类号： H01S5/18308 , H01S5/18305 , H01S5/18327 , H01S5/2214 , Y10S438/969
摘要： A method of fabricating VCSELs including the steps of epitaxially growing a first mirror stack of a first conductivity type, an active region on the first mirror stack, and a first portion of a second mirror stack of a second conductivity type on the active region. A dielectric layer is then formed on the first portion of the second mirror stack, patterned to define an operating region and a remaining portion of the second mirror stack is epitaxially grown on the first portion to form a complete second mirror stack. Portions of the second mirror stack overlying the dielectric layer are polycrystalline in formation and substantially limit the remaining portion of the second mirror stack to the operating region. The polycrystalline layers can then be removed and electrical contacts formed.
摘要翻译：一种制造VCSEL的方法，包括以下步骤：在有源区上外延生长第一导电类型的第一反射镜叠层，第一反射镜叠层上的有源区和第二导电类型的第二反射镜叠层的第一部分。然后在第二反射镜叠层的第一部分上形成电介质层，其被图案化以限定操作区域，并且在第一部分上外延生长第二反射镜叠层的剩余部分以形成完整的第二反射镜叠层。覆盖在介电层上的第二反射镜叠层的部分在形成时是多晶的，并且基本上将第二反射镜叠层的剩余部分限制到操作区域。然后可以去除多晶层并形成电接触。

10. 发明授权

US5530715A Vertical cavity surface emitting laser having continuous grading 失效
标题翻译：具有连续分级的垂直腔表面发射激光
公开(公告)号：US5530715A
公开(公告)日：1996-06-25
申请号：US346559
申请日：1994-11-29
申请人： Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
发明人： Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
IPC分类号： H01S5/00 , H01S5/183 , H01S3/08
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/3054 , H01S5/3215 , H01S5/34313
摘要： A first stack of distributed Bragg mirrors having alternating layers of aluminum gallium arsenide differing in concentrations of an aluminum are disposed on a surface of a substrate with a first plurality of continuous gradient layers positioned between the alternating layers of differing aluminum concentrations to dynamically move the aluminum concentration from one of the alternating layer to another alternating layers. A first cladding region is disposed on the first stack of distributed Bragg mirrors. An active region is disposed on the first cladding region with a second cladding region being dispose on the active region. A second stack of distributed Bragg mirrors having alternating layers of aluminum gallium arsenide differing concentrations of aluminum are disposed on the second cladding region with a second plurality of continuous gradient layers being positioned between the alternating layers of differing aluminum concentrations to dynamically change the aluminum concentration from one of the altering layers to another alternating layers.
摘要翻译：具有不同于铝浓度的铝砷化镓的交替层的分布布拉格反射镜的第一堆叠被布置在基板的表面上，其中第一多个连续梯度层位于不同铝浓度的交替层之间以动态地移动铝从交替层之一到另一个交替层的浓度。第一包层区域布置在分布布拉格反射镜的第一堆叠上。有源区设置在第一包层区上，第二包层区设置在有源区上。具有不同浓度的铝的交替铝砷化镓层的第二层布拉格反射镜布置在第二覆层区域上，第二多个连续梯度层位于不同铝浓度的交替层之间以动态地将铝浓度从另一个交替层的改变层之一。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式