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1. 发明申请

US20130313971A1 Gallium ION Source and Materials Therefore 有权
标题翻译：因此，镓离子源和材料
公开(公告)号：US20130313971A1
公开(公告)日：2013-11-28
申请号：US13477253
申请日：2012-05-22
申请人： Costel Biloiu , Craig R. Chaney , Neil J. Bassom , Benjamin Colombeau , Dennis P. Rodier
发明人： Costel Biloiu , Craig R. Chaney , Neil J. Bassom , Benjamin Colombeau , Dennis P. Rodier
IPC分类号： H01J27/20
CPC分类号： H01J27/20 , H01J7/24 , H01J37/02 , H01J37/08
摘要： In one embodiment, a method for generating an ion beam having gallium ions includes providing at least a portion of a gallium compound target in a plasma chamber, the gallium compound target comprising gallium and at least one additional element. The method also includes initiating a plasma in the plasma chamber using at least one gaseous species and providing a source of gaseous etchant species to react with the gallium compound target to form a volatile gallium species.
摘要翻译：在一个实施方案中，用于产生具有镓离子的离子束的方法包括在等离子体室中提供镓化合物靶的至少一部分，所述镓化合物靶包含镓和至少一个附加元素。该方法还包括使用至少一种气态物质在等离子体室中引发等离子体，并提供气态蚀刻剂物质源以与镓化合物靶反应以形成挥发性镓物质。

2. 发明授权

US09396902B2 Gallium ION source and materials therefore 有权
标题翻译：因此，镓离子源和材料
公开(公告)号：US09396902B2
公开(公告)日：2016-07-19
申请号：US13477253
申请日：2012-05-22
申请人： Costel Biloiu , Craig R. Chaney , Neil J. Bassom , Benjamin Colombeau , Dennis P. Rodier
发明人： Costel Biloiu , Craig R. Chaney , Neil J. Bassom , Benjamin Colombeau , Dennis P. Rodier
IPC分类号： H01J7/24 , H01J27/20 , H01J37/02 , H01J37/08
CPC分类号： H01J27/20 , H01J7/24 , H01J37/02 , H01J37/08
摘要： In one embodiment, a method for generating an ion beam having gallium ions includes providing at least a portion of a gallium compound target in a plasma chamber, the gallium compound target comprising gallium and at least one additional element. The method also includes initiating a plasma in the plasma chamber using at least one gaseous species and providing a source of gaseous etchant species to react with the gallium compound target to form a volatile gallium species.
摘要翻译：在一个实施方案中，用于产生具有镓离子的离子束的方法包括在等离子体室中提供镓化合物靶的至少一部分，所述镓化合物靶包含镓和至少一个附加元素。该方法还包括使用至少一种气态物质在等离子体室中引发等离子体，并提供气态蚀刻剂物质源以与镓化合物靶反应以形成挥发性镓物质。

3. 发明申请

US20090314951A1 ION SOURCE CLEANING METHOD AND APPARATUS 有权
标题翻译：离子源清洁方法和装置
公开(公告)号：US20090314951A1
公开(公告)日：2009-12-24
申请号：US12143247
申请日：2008-06-20
申请人： Costel Biloiu , Craig R. Chaney , Eric R. Cobb , Bon-Woong Koo , Wilhelm P. Platow
发明人： Costel Biloiu , Craig R. Chaney , Eric R. Cobb , Bon-Woong Koo , Wilhelm P. Platow
IPC分类号： H01J27/02 , B08B6/00
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/024 , H01J2237/0458 , H01J2237/061
摘要： In a cleaning process for an ion source chamber, an electrode positioned outside of the ion source chamber includes a suppression plug. When the cleaning gas is introduced into the source chamber, the suppression plug may engage an extraction aperture of the source chamber to adjust the gas pressure within the chamber to enhance chamber cleaning via. plasma-enhanced chemical reaction. The gas conductance between the source chamber aperture and the suppression plug can be adjusted during the cleaning process to provide optimum cleaning conditions and to exhaust unwanted deposits.
摘要翻译：在离子源室的清洁处理中，位于离子源室外的电极包括抑制塞。当清洁气体被引入源室中时，抑制塞可以接合源室的提取孔以调节室内的气体压力以增强室清洁。等离子体增强化学反应。在清洁过程中可以调节源室孔和抑制塞之间的气体传导，以提供最佳的清洁条件并排出不需要的沉积物。

4. 发明授权

US07888662B2 Ion source cleaning method and apparatus 有权
标题翻译：离子源清洗方法及装置
公开(公告)号：US07888662B2
公开(公告)日：2011-02-15
申请号：US12143247
申请日：2008-06-20
申请人： Costel Biloiu , Craig R. Chaney , Eric R. Cobb , Bon-Woong Koo , Wilhelm P. Platow
发明人： Costel Biloiu , Craig R. Chaney , Eric R. Cobb , Bon-Woong Koo , Wilhelm P. Platow
IPC分类号： H01J37/08
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/024 , H01J2237/0458 , H01J2237/061
摘要： In a cleaning process for an ion source chamber, an electrode positioned outside of the ion source chamber includes a suppression plug. When the cleaning gas is introduced intothe source chamber, the suppression plug may engage an extraction aperture of the source chamber to adjust the gas pressure within the chamber to enhance chamber cleaning via. plasma-enhanced chemical reaction. The gas conductance between the source chamber aperture and the suppression plug can be adjusted during the cleaning process to provide optimum cleaning conditions and to exhaust unwanted deposits.
摘要翻译：在离子源室的清洁处理中，位于离子源室外的电极包括抑制塞。当清洁气体被引入源室中时，抑制塞可以接合源室的提取孔以调节室内的气体压力以增强室清洁。等离子体增强化学反应。在清洁过程中可以调节源室孔和抑制塞之间的气体传导，以提供最佳的清洁条件并排出不需要的沉积物。

5. 发明授权

US08501624B2 Excited gas injection for ion implant control 有权
标题翻译：激发气体注入用于离子注入控制
公开(公告)号：US08501624B2
公开(公告)日：2013-08-06
申请号：US12328096
申请日：2008-12-04
申请人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
发明人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01J27/022 , H01J37/08 , H01J37/3171 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J2237/006 , H01J2237/061 , H01J2237/0815 , H01J2237/24514
摘要： An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.
摘要翻译：公开了一种利用离子源和/或原子气体注入的离子源。在离子束施加中，源气体可以直接使用，如通常提供的。或者或另外，源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。这可以用于产生兴奋的中性粒子，重离子，亚稳分子或多电荷离子。在另一个实施例中，使用多个气体，其中一个或多个气体通过远程等离子体发生器。在某些实施方案中，气体在被提供给离子源室之前组合在单个等离子体发生器中。在等离子体浸渍应用中，通过一个或多个另外的气体注入位置将等离子体注入到处理室中。这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

6. 发明申请

US20110143527A1 TECHNIQUES FOR GENERATING UNIFORM ION BEAM 审中-公开
标题翻译：用于产生均匀离子束的技术
公开(公告)号：US20110143527A1
公开(公告)日：2011-06-16
申请号：US12964357
申请日：2010-12-09
申请人： Wilhelm P. PLATOW , Neil J. Bassom , Peter F. Kurunczi , Alexander S. Perel , Craig R. Chaney
发明人： Wilhelm P. PLATOW , Neil J. Bassom , Peter F. Kurunczi , Alexander S. Perel , Craig R. Chaney
IPC分类号： H01L21/265 , H01J37/317 , H01J37/02
CPC分类号： H01J37/08 , H01J37/3171
摘要： Herein an improved technique for generating uniform ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate with an ion implanter comprising an ion source. The method may comprise: introducing dopant into an ion source chamber of the ion source, the dopant may comprise molecules containing boron and hydrogen; introducing diluent into the ion source chamber, the diluent containing halogen; ionizing the dopant and the diluent into molecular ions and halogen containing ions, the molecular ions containing boron and hydrogen; extracting the molecular ions and the halogen containing ions from the ions source chamber; and directing the molecular ions toward the substrate, where the halogen containing ions may improve uniformity of the molecular ions extracted from the ion source and extend the lifetime of the ion source.
摘要翻译：本发明公开了一种用于产生均匀离子束的改进技术。在一个特定的示例性实施例中，该技术可以被实现为用于使用包括离子源的离子注入机来处理衬底的方法。该方法可以包括：将掺杂剂引入到离子源的离子源室中，掺杂剂可以包含含有硼和氢的分子; 将稀释剂引入离子源室，稀释剂含有卤素; 将掺杂剂和稀释剂电离成分子离子和含卤素的离子，含有硼和氢的分子离子; 从离子源室中提取分子离子和含卤素离子; 并且将分子离子引导到衬底，其中含卤素的离子可以改善从离子源提取的分子离子的均匀性并延长离子源的寿命。

7. 发明申请

US20100327159A1 Ion Source Cleaning End Point Detection 有权
标题翻译：离子源清洗终点检测
公开(公告)号：US20100327159A1
公开(公告)日：2010-12-30
申请号：US12492894
申请日：2009-06-26
申请人： Wilhelm P. Platow , Neil J. Bassom , Peter F. Kurunczi , Alexander S. Perel , Craig R. Chaney
发明人： Wilhelm P. Platow , Neil J. Bassom , Peter F. Kurunczi , Alexander S. Perel , Craig R. Chaney
IPC分类号： H01J37/317 , H01J37/05 , H01J49/26
CPC分类号： H01J49/10 , H01J27/02 , H01J37/08 , H01J37/3171 , H01J2209/017 , H01J2237/022 , H01J2237/05 , H01J2237/30466
摘要： In an ion implanter, a Faraday cup is utilized to receive an ion beam generated during ion source cleaning. The detected beam has an associated mass spectrum which indicates when the ion source cleaning process is complete. The mass spectrum results in a signal composed of a cleaning agent and the material comprising the ion source. This signal will rise over time as the ion source chamber is being cleaned and will level-off and remain constant once the deposits are etched away from the source chamber, thereby utilizing existing implant tools to determine endpoint detection during ion source cleaning.
摘要翻译：在离子注入机中，法拉第杯用于接收在离子源清洁期间产生的离子束。检测到的光束具有相关联的质谱，其指示何时完成离子源清洁过程。质谱产生由清洁剂和包含离子源的材料组成的信号。当离子源室被清洁时，该信号将随着时间的推移而升高，并且一旦沉积物从源室被蚀刻掉，就会保持恒定，从而利用现有的植入工具确定离子源清洁期间的端点检测。

8. 发明授权

US08937003B2 Technique for ion implanting a target 有权
标题翻译：离子注入目标的技术
公开(公告)号：US08937003B2
公开(公告)日：2015-01-20
申请号：US13613964
申请日：2012-09-13
申请人： Alexander S. Perel , Craig R. Chaney , Wayne D. LeBlanc , Robert Lindberg , Antonella Cucchetti , Neil J. Bassom , David Sporleder , James Young
发明人： Alexander S. Perel , Craig R. Chaney , Wayne D. LeBlanc , Robert Lindberg , Antonella Cucchetti , Neil J. Bassom , David Sporleder , James Young
IPC分类号： H01L21/26 , H01J27/00 , C23C14/48 , C23C14/56 , H01J37/08 , H01J37/317
CPC分类号： C23C14/48 , C23C14/564 , H01J37/08 , H01J37/3171 , H01J2237/022
摘要： A technique for ion implanting a target is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for ion implanting a target, the method comprising: providing a predetermined amount of processing gas in an arc chamber of an ion source, the processing gas containing implant species and implant species carrier, where the implant species carrier may be one of O and H; providing a predetermined amount of dilutant into the arc chamber, wherein the dilutant may comprise a noble species containing material; and ionizing the processing gas and the dilutant.
摘要翻译：公开了用于离子注入靶的技术。根据一个示例性实施例，该技术可以被实现为用于离子注入靶的方法，所述方法包括：在离子源的电弧室中提供预定量的处理气体，所述处理气体含有植入物种类和植入物种载体，其中种植体载体可以是O和H之一; 将预定量的稀释剂提供到所述电弧室中，其中所述稀释剂可包括含有贵重物质的材料; 并使处理气体和稀释剂电离。

9. 发明授权

US08003959B2 Ion source cleaning end point detection 有权
标题翻译：离子源清洗终点检测
公开(公告)号：US08003959B2
公开(公告)日：2011-08-23
申请号：US12492894
申请日：2009-06-26
申请人： Wilhelm P. Platow , Neil J. Bassom , Peter F. Kurunczi , Alexander S. Perel , Craig R. Chaney
发明人： Wilhelm P. Platow , Neil J. Bassom , Peter F. Kurunczi , Alexander S. Perel , Craig R. Chaney
IPC分类号： H01J37/317 , H01J37/08 , H01J49/10 , H01J27/02 , H01J9/38
CPC分类号： H01J49/10 , H01J27/02 , H01J37/08 , H01J37/3171 , H01J2209/017 , H01J2237/022 , H01J2237/05 , H01J2237/30466
摘要： In an ion implanter, a Faraday cup is utilized to receive an ion beam generated during ion source cleaning. The detected beam has an associated mass spectrum which indicates when the ion source cleaning process is complete. The mass spectrum results in a signal composed of a cleaning agent and the material comprising the ion source. This signal will rise over time as the ion source chamber is being cleaned and will level-off and remain constant once the deposits are etched away from the source chamber, thereby utilizing existing implant tools to determine endpoint detection during ion source cleaning.
摘要翻译：在离子注入机中，法拉第杯用于接收在离子源清洁期间产生的离子束。检测到的光束具有相关联的质谱，其指示何时完成离子源清洁过程。质谱产生由清洁剂和包含离子源的材料组成的信号。当离子源室被清洁时，该信号将随着时间的推移而升高，并且一旦沉积物从源室被蚀刻掉，就会保持恒定，从而利用现有的植入工具确定离子源清洁期间的端点检测。

10. 发明申请

US20100140077A1 EXCITED GAS INJECTION FOR ION IMPLANT CONTROL 有权
标题翻译：激光注射用于离子植入控制
公开(公告)号：US20100140077A1
公开(公告)日：2010-06-10
申请号：US12328096
申请日：2008-12-04
申请人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
发明人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
IPC分类号： B01J19/08 , C23C16/513
CPC分类号： H01J27/022 , H01J37/08 , H01J37/3171 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J2237/006 , H01J2237/061 , H01J2237/0815 , H01J2237/24514
摘要： An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.
摘要翻译：公开了一种利用离子源和/或原子气体注入的离子源。在离子束施加中，源气体可以直接使用，如通常提供的。或者或另外，源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。这可以用于产生兴奋的中性粒子，重离子，亚稳分子或多电荷离子。在另一个实施例中，使用多个气体，其中一个或多个气体通过远程等离子体发生器。在某些实施方案中，气体在被提供给离子源室之前组合在单个等离子体发生器中。在等离子体浸渍应用中，通过一个或多个另外的气体注入位置将等离子体注入到处理室中。这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

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