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1. 发明申请

US20100140077A1 EXCITED GAS INJECTION FOR ION IMPLANT CONTROL 有权
标题翻译：激光注射用于离子植入控制
公开(公告)号：US20100140077A1
公开(公告)日：2010-06-10
申请号：US12328096
申请日：2008-12-04
申请人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
发明人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
IPC分类号： B01J19/08 , C23C16/513
CPC分类号： H01J27/022 , H01J37/08 , H01J37/3171 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J2237/006 , H01J2237/061 , H01J2237/0815 , H01J2237/24514
摘要： An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.
摘要翻译：公开了一种利用离子源和/或原子气体注入的离子源。在离子束施加中，源气体可以直接使用，如通常提供的。或者或另外，源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。这可以用于产生兴奋的中性粒子，重离子，亚稳分子或多电荷离子。在另一个实施例中，使用多个气体，其中一个或多个气体通过远程等离子体发生器。在某些实施方案中，气体在被提供给离子源室之前组合在单个等离子体发生器中。在等离子体浸渍应用中，通过一个或多个另外的气体注入位置将等离子体注入到处理室中。这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

2. 发明授权

US08501624B2 Excited gas injection for ion implant control 有权
标题翻译：激发气体注入用于离子注入控制
公开(公告)号：US08501624B2
公开(公告)日：2013-08-06
申请号：US12328096
申请日：2008-12-04
申请人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
发明人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01J27/022 , H01J37/08 , H01J37/3171 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J2237/006 , H01J2237/061 , H01J2237/0815 , H01J2237/24514
摘要： An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.
摘要翻译：公开了一种利用离子源和/或原子气体注入的离子源。在离子束施加中，源气体可以直接使用，如通常提供的。或者或另外，源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。这可以用于产生兴奋的中性粒子，重离子，亚稳分子或多电荷离子。在另一个实施例中，使用多个气体，其中一个或多个气体通过远程等离子体发生器。在某些实施方案中，气体在被提供给离子源室之前组合在单个等离子体发生器中。在等离子体浸渍应用中，通过一个或多个另外的气体注入位置将等离子体注入到处理室中。这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

3. 发明授权

US08466431B2 Techniques for improving extracted ion beam quality using high-transparency electrodes 有权
标题翻译：使用高透明电极提高离子束质量的技术
公开(公告)号：US08466431B2
公开(公告)日：2013-06-18
申请号：US12370555
申请日：2009-02-12
申请人： James S. Buff , Svetlana Radovanov , Bon-Woong Koo , Wilhelm Platow , Frank Sinclair , D. Jeffrey Lischer , Craig R. Chaney , Steven Borichevsky , Eric R. Cobb , Mayur Jagtap , Kenneth H. Purser , Victor Benveniste , Shardul S. Patel
发明人： James S. Buff , Svetlana Radovanov , Bon-Woong Koo , Wilhelm Platow , Frank Sinclair , D. Jeffrey Lischer , Craig R. Chaney , Steven Borichevsky , Eric R. Cobb , Mayur Jagtap , Kenneth H. Purser , Victor Benveniste , Shardul S. Patel
IPC分类号： H01J37/15 , G21K5/10
CPC分类号： H01J37/3171 , H01J27/024 , H01J37/08 , H01J37/09 , H01J37/304 , H01J2237/0453 , H01J2237/0458 , H01J2237/083 , H01J2237/24542
摘要： Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.
摘要翻译：公开了使用高透明电极提高离子束质量的技术。在一个特定的示例性实施例中，技术可以被实现为用于离子注入的装置。该装置可以包括用于产生离子束的离子源，其中离子源包括具有离子束穿过其中的孔的面板。该装置还可以包括至少包括抑制电极和高透明度接地电极的一组提取电极，其中所述提取电极组可以经由面板从离子源提取离子束，并且其中高透明度接地电极可以被配置为优化抑制电极和高透明度接地电极之间的气体传导，以改善提取的离子束质量。

4. 发明授权

US08263944B2 Directional gas injection for an ion source cathode assembly 有权
标题翻译：离子源阴极组件的定向气体注入
公开(公告)号：US08263944B2
公开(公告)日：2012-09-11
申请号：US12340812
申请日：2008-12-22
申请人： John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
发明人： John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
IPC分类号： H01J27/00
CPC分类号： H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/022 , H01J2237/061
摘要： In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.
摘要翻译：在离子注入机中，惰性气体通过供应管被引导到离子源室附近的阴极组件。向惰性气体提供朝向阴极组件的局部定向流，以减少引入离子源室的清洁或掺杂气体的不期望浓度，从而减少阴极组件中不想要的细丝生长的影响并延长离子的制造寿命资源。

5. 发明申请

US20100155619A1 DIRECTIONAL GAS INJECTION FOR AN ION SOURCE CATHODE ASSEMBLY 有权
标题翻译：用于阴离子阴极组件的方向气体注入
公开(公告)号：US20100155619A1
公开(公告)日：2010-06-24
申请号：US12340812
申请日：2008-12-22
申请人： John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
发明人： John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
IPC分类号： H01J27/00 , H01J27/02
CPC分类号： H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/022 , H01J2237/061
摘要： In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.
摘要翻译：在离子注入机中，惰性气体通过供应管被引导到离子源室附近的阴极组件。向惰性气体提供朝向阴极组件的局部定向流，以减少引入离子源室的清洁或掺杂气体的不期望浓度，从而减少阴极组件中不想要的细丝生长的影响并延长离子的制造寿命资源。

6. 发明授权

US08188448B2 Temperature controlled ion source 有权
标题翻译：温度控制离子源
公开(公告)号：US08188448B2
公开(公告)日：2012-05-29
申请号：US12754381
申请日：2010-04-05
申请人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
发明人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
IPC分类号： G21K5/10
CPC分类号： H01J37/3171 , H01J37/08 , H01J2237/002
摘要： An ion source is provided that utilizes the same dopant gas supplied to the chamber to generate the desired process plasma to also provide temperature control of the chamber walls during high throughput operations. The ion source includes a chamber having a wall that defines an interior surface. A liner is disposed within the chamber and has at least one orifice to supply the dopant gas to an inside of the chamber. A gap is defined between at least a portion of the interior surface of the chamber wall and the liner. A first conduit is configured to supply dopant gas to the gap where the dopant gas has a flow rate within the gap. A second conduit is configured to remove the dopant gas from the gap, wherein the flow rate of the dopant gas within the gap acts as a heat transfer media to regulate the temperature of the interior of the chamber.
摘要翻译：提供了一种离子源，其利用提供给腔室的相同掺杂剂气体来产生所需的工艺等离子体，以在高通量操作期间提供室壁的温度控制。离子源包括具有限定内表面的壁的室。衬套设置在腔室内并且具有至少一个孔口以将掺杂剂气体供应到腔室的内部。在室壁的内表面的至少一部分和衬垫之间限定间隙。第一管道被配置为向掺杂剂气体在间隙内具有流速的间隙提供掺杂剂气体。第二导管构造成从间隙去除掺杂剂气体，其中间隙内的掺杂剂气体的流速用作传热介质以调节室内部的温度。

7. 发明申请

US20110240876A1 APPARATUS FOR CONTROLLING THE TEMPERATURE OF AN RF ION SOURCE WINDOW 失效
标题翻译：用于控制RF离子源窗口温度的装置
公开(公告)号：US20110240876A1
公开(公告)日：2011-10-06
申请号：US12754258
申请日：2010-04-05
申请人： Frank Sinclair , Costel Biloiu , Bon-Woong Koo , Victor Benveniste , Shardul Patel
发明人： Frank Sinclair , Costel Biloiu , Bon-Woong Koo , Victor Benveniste , Shardul Patel
IPC分类号： H01J27/02
CPC分类号： H01J37/32495 , H01J27/16 , H01J37/08 , H01J37/3171 , H01J37/321 , H01J37/32412 , H01J37/32422 , H01J37/32522 , H01J2237/022 , H01J2237/0266 , H01J2237/0817
摘要： An RF ion source utilizing a heating/RF-shielding element for controlling the temperature of an RF window and to act as an RF shielding element for the RF ion source. When the heating/RF shielding element is in a heating mode, it suppresses formation of unwanted deposits on the RF window which negatively impacts the transfer of RF energy from an RF antenna to a plasma chamber. When the heating/RF-shielding element is in a shielding mode, it provides an electrostatic shielding for the RF ion source.
摘要翻译： RF离子源，其利用加热/ RF屏蔽元件来控制RF窗口的温度并用作RF离子源的RF屏蔽元件。当加热/ RF屏蔽元件处于加热模式时，它抑制在RF窗口上形成不需要的沉积物，这对RF能量从RF天线到等离子体室的转移产生负面影响。当加热/ RF屏蔽元件处于屏蔽模式时，它为RF离子源提供静电屏蔽。

8. 发明申请

US20110240877A1 TEMPERATURE CONTROLLED ION SOURCE 有权
标题翻译：温度控制离子源
公开(公告)号：US20110240877A1
公开(公告)日：2011-10-06
申请号：US12754318
申请日：2010-04-05
申请人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
发明人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
IPC分类号： H01J27/08 , H01J37/317
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/002
摘要： An ion source is provided that utilizes a cooling plate and a gap interface to control the temperature of an ion source chamber. The gap interface is defined between the cooling plate and a wall of the chamber. A coolant gas is supplied to the interface at a given pressure where the pressure determines thermal conductivity from the cooling plate to the chamber to control the temperature of the interior of the chamber.
摘要翻译：提供了一种利用冷却板和间隙界面来控制离子源室的温度的离子源。间隙界面限定在冷却板和腔室的壁之间。在给定压力下将冷却剂气体供应到界面，其中压力确定从冷却板到室的导热性，以控制室内部的温度。

9. 发明授权

US08357912B2 Techniques for providing a multimode ion source 有权
标题翻译：提供多模离子源的技术
公开(公告)号：US08357912B2
公开(公告)日：2013-01-22
申请号：US12708216
申请日：2010-02-18
申请人： Svetlana Radovanov , Bon-Woong Koo , Frank Sinclair , Victor Benveniste
发明人： Svetlana Radovanov , Bon-Woong Koo , Frank Sinclair , Victor Benveniste
IPC分类号： H01J37/08
CPC分类号： H01J27/08 , H01J27/16 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/061 , H01J2237/0817 , H01J2237/082
摘要： Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation, the apparatus including an ion source having a hot cathode and a high frequency plasma generator, wherein the ion source has multiple modes of operation.
摘要翻译：公开了提供多模离子源的技术。在一个特定的示例性实施例中，可以将技术实现为用于离子注入的装置，该装置包括具有热阴极和高频等离子体发生器的离子源，其中离子源具有多种操作模式。

10. 发明申请

US20110240878A1 TEMPERATURE CONTROLLED ION SOURCE 有权
标题翻译：温度控制离子源
公开(公告)号：US20110240878A1
公开(公告)日：2011-10-06
申请号：US12754381
申请日：2010-04-05
申请人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
发明人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
IPC分类号： H01J27/02 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/08 , H01J2237/002
摘要： An ion source is provided that utilizes the same dopant gas supplied to the chamber to generate the desired process plasma to also provide temperature control of the chamber walls during high throughput operations. The ion source includes a chamber having a wall that defines an interior surface. A liner is disposed within the chamber and has at least one orifice to supply the dopant gas to an inside of the chamber. A gap is defined between at least a portion of the interior surface of the chamber wall and the liner. A first conduit is configured to supply dopant gas to the gap where the dopant gas has a flow rate within the gap. A second conduit is configured to remove the dopant gas from the gap, wherein the flow rate of the dopant gas within the gap acts as a heat transfer media to regulate the temperature of the interior of the chamber.
摘要翻译：提供了一种离子源，其利用提供给腔室的相同掺杂剂气体来产生所需的工艺等离子体，以在高通量操作期间提供室壁的温度控制。离子源包括具有限定内表面的壁的室。衬套设置在腔室内并且具有至少一个孔口以将掺杂剂气体供应到腔室的内部。在室壁的内表面的至少一部分和衬垫之间限定间隙。第一管道被配置为向掺杂剂气体在间隙内具有流速的间隙提供掺杂剂气体。第二导管构造成从间隙去除掺杂剂气体，其中间隙内的掺杂剂气体的流速用作传热介质以调节室内部的温度。

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