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1. 发明申请

US20090314951A1 ION SOURCE CLEANING METHOD AND APPARATUS 有权
标题翻译：离子源清洁方法和装置
公开(公告)号：US20090314951A1
公开(公告)日：2009-12-24
申请号：US12143247
申请日：2008-06-20
申请人： Costel Biloiu , Craig R. Chaney , Eric R. Cobb , Bon-Woong Koo , Wilhelm P. Platow
发明人： Costel Biloiu , Craig R. Chaney , Eric R. Cobb , Bon-Woong Koo , Wilhelm P. Platow
IPC分类号： H01J27/02 , B08B6/00
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/024 , H01J2237/0458 , H01J2237/061
摘要： In a cleaning process for an ion source chamber, an electrode positioned outside of the ion source chamber includes a suppression plug. When the cleaning gas is introduced into the source chamber, the suppression plug may engage an extraction aperture of the source chamber to adjust the gas pressure within the chamber to enhance chamber cleaning via. plasma-enhanced chemical reaction. The gas conductance between the source chamber aperture and the suppression plug can be adjusted during the cleaning process to provide optimum cleaning conditions and to exhaust unwanted deposits.
摘要翻译：在离子源室的清洁处理中，位于离子源室外的电极包括抑制塞。当清洁气体被引入源室中时，抑制塞可以接合源室的提取孔以调节室内的气体压力以增强室清洁。等离子体增强化学反应。在清洁过程中可以调节源室孔和抑制塞之间的气体传导，以提供最佳的清洁条件并排出不需要的沉积物。

2. 发明授权

US07888662B2 Ion source cleaning method and apparatus 有权
标题翻译：离子源清洗方法及装置
公开(公告)号：US07888662B2
公开(公告)日：2011-02-15
申请号：US12143247
申请日：2008-06-20
申请人： Costel Biloiu , Craig R. Chaney , Eric R. Cobb , Bon-Woong Koo , Wilhelm P. Platow
发明人： Costel Biloiu , Craig R. Chaney , Eric R. Cobb , Bon-Woong Koo , Wilhelm P. Platow
IPC分类号： H01J37/08
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/024 , H01J2237/0458 , H01J2237/061
摘要： In a cleaning process for an ion source chamber, an electrode positioned outside of the ion source chamber includes a suppression plug. When the cleaning gas is introduced intothe source chamber, the suppression plug may engage an extraction aperture of the source chamber to adjust the gas pressure within the chamber to enhance chamber cleaning via. plasma-enhanced chemical reaction. The gas conductance between the source chamber aperture and the suppression plug can be adjusted during the cleaning process to provide optimum cleaning conditions and to exhaust unwanted deposits.
摘要翻译：在离子源室的清洁处理中，位于离子源室外的电极包括抑制塞。当清洁气体被引入源室中时，抑制塞可以接合源室的提取孔以调节室内的气体压力以增强室清洁。等离子体增强化学反应。在清洁过程中可以调节源室孔和抑制塞之间的气体传导，以提供最佳的清洁条件并排出不需要的沉积物。

3. 发明授权

US08263944B2 Directional gas injection for an ion source cathode assembly 有权
标题翻译：离子源阴极组件的定向气体注入
公开(公告)号：US08263944B2
公开(公告)日：2012-09-11
申请号：US12340812
申请日：2008-12-22
申请人： John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
发明人： John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
IPC分类号： H01J27/00
CPC分类号： H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/022 , H01J2237/061
摘要： In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.
摘要翻译：在离子注入机中，惰性气体通过供应管被引导到离子源室附近的阴极组件。向惰性气体提供朝向阴极组件的局部定向流，以减少引入离子源室的清洁或掺杂气体的不期望浓度，从而减少阴极组件中不想要的细丝生长的影响并延长离子的制造寿命资源。

4. 发明申请

US20100155619A1 DIRECTIONAL GAS INJECTION FOR AN ION SOURCE CATHODE ASSEMBLY 有权
标题翻译：用于阴离子阴极组件的方向气体注入
公开(公告)号：US20100155619A1
公开(公告)日：2010-06-24
申请号：US12340812
申请日：2008-12-22
申请人： John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
发明人： John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
IPC分类号： H01J27/00 , H01J27/02
CPC分类号： H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/022 , H01J2237/061
摘要： In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.
摘要翻译：在离子注入机中，惰性气体通过供应管被引导到离子源室附近的阴极组件。向惰性气体提供朝向阴极组件的局部定向流，以减少引入离子源室的清洁或掺杂气体的不期望浓度，从而减少阴极组件中不想要的细丝生长的影响并延长离子的制造寿命资源。

5. 发明授权

US08466431B2 Techniques for improving extracted ion beam quality using high-transparency electrodes 有权
标题翻译：使用高透明电极提高离子束质量的技术
公开(公告)号：US08466431B2
公开(公告)日：2013-06-18
申请号：US12370555
申请日：2009-02-12
申请人： James S. Buff , Svetlana Radovanov , Bon-Woong Koo , Wilhelm Platow , Frank Sinclair , D. Jeffrey Lischer , Craig R. Chaney , Steven Borichevsky , Eric R. Cobb , Mayur Jagtap , Kenneth H. Purser , Victor Benveniste , Shardul S. Patel
发明人： James S. Buff , Svetlana Radovanov , Bon-Woong Koo , Wilhelm Platow , Frank Sinclair , D. Jeffrey Lischer , Craig R. Chaney , Steven Borichevsky , Eric R. Cobb , Mayur Jagtap , Kenneth H. Purser , Victor Benveniste , Shardul S. Patel
IPC分类号： H01J37/15 , G21K5/10
CPC分类号： H01J37/3171 , H01J27/024 , H01J37/08 , H01J37/09 , H01J37/304 , H01J2237/0453 , H01J2237/0458 , H01J2237/083 , H01J2237/24542
摘要： Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.
摘要翻译：公开了使用高透明电极提高离子束质量的技术。在一个特定的示例性实施例中，技术可以被实现为用于离子注入的装置。该装置可以包括用于产生离子束的离子源，其中离子源包括具有离子束穿过其中的孔的面板。该装置还可以包括至少包括抑制电极和高透明度接地电极的一组提取电极，其中所述提取电极组可以经由面板从离子源提取离子束，并且其中高透明度接地电极可以被配置为优化抑制电极和高透明度接地电极之间的气体传导，以改善提取的离子束质量。

6. 发明申请

US20080169427A1 TECHNIQUES FOR PROVIDING ION SOURCE FEED MATERIALS 有权
标题翻译：提供离子源材料的技术
公开(公告)号：US20080169427A1
公开(公告)日：2008-07-17
申请号：US11776217
申请日：2007-07-11
申请人： Christopher R. HATEM , Craig R. Chaney , Eric R. Cobb , Joseph C. Olson , Chris Campbell
发明人： Christopher R. HATEM , Craig R. Chaney , Eric R. Cobb , Joseph C. Olson , Chris Campbell
IPC分类号： B01J37/30
CPC分类号： H01J27/02 , C23C14/246 , C23C14/48 , H01J37/08 , H01J37/3171 , H01J2237/006
摘要： Techniques for providing ion source feed materials are disclosed. In one particular exemplary embodiment, the techniques may be realized as a container for supplying an ion source feed material. The container may comprise an internal cavity to be pre-filled with an ion source feed material. The container may also comprise an outer body configured to be removably loaded into a corresponding housing that is coupled to an ion source chamber via a nozzle assembly. The container may further comprise an outlet to seal in the pre-filled ion source feed material, the outlet being further configured to engage with the nozzle assembly to establish a flow path between the internal cavity and the ion source chamber. The container may be configured to be a disposable component.
摘要翻译：公开了提供离子源进料的技术。在一个特定的示例性实施例中，这些技术可以被实现为用于提供离子源进料的容器。容器可以包括预先填充有离子源进料的内部空腔。容器还可以包括被配置为可移除地装载到经由喷嘴组件耦合到离子源室的相应壳体中的外主体。容器还可包括密封在预填充的离子源进料中的出口，该出口进一步构造成与喷嘴组件接合以在内腔和离子源室之间建立流路。容器可以被配置为一次性部件。

7. 发明授权

US07655932B2 Techniques for providing ion source feed materials 有权
标题翻译：提供离子源饲料的技术
公开(公告)号：US07655932B2
公开(公告)日：2010-02-02
申请号：US11776217
申请日：2007-07-11
申请人： Christopher R. Hatem , Craig R. Chaney , Eric R. Cobb , Joseph C. Olson , Chris Campbell
发明人： Christopher R. Hatem , Craig R. Chaney , Eric R. Cobb , Joseph C. Olson , Chris Campbell
IPC分类号： H01J49/10 , H01J27/02
CPC分类号： H01J27/02 , C23C14/246 , C23C14/48 , H01J37/08 , H01J37/3171 , H01J2237/006
摘要： Techniques for providing ion source feed materials are disclosed. In one particular exemplary embodiment, the techniques may be realized as a container for supplying an ion source feed material. The container may comprise an internal cavity to be pre-filled with an ion source feed material. The container may also comprise an outer body configured to be removably loaded into a corresponding housing that is coupled to an ion source chamber via a nozzle assembly. The container may further comprise an outlet to seal in the pre-filled ion source feed material, the outlet being further configured to engage with the nozzle assembly to establish a flow path between the internal cavity and the ion source chamber. The container may be configured to be a disposable component.
摘要翻译：公开了提供离子源进料的技术。在一个特定的示例性实施例中，这些技术可以被实现为用于提供离子源进料的容器。容器可以包括预先填充有离子源进料的内部空腔。容器还可以包括被配置为可移除地装载到经由喷嘴组件耦合到离子源室的相应壳体中的外主体。容器还可包括密封在预填充的离子源进料中的出口，该出口进一步构造成与喷嘴组件接合以在内腔和离子源室之间建立流路。容器可以被配置为一次性部件。

8. 发明授权

US07491947B2 Technique for improving performance and extending lifetime of indirectly heated cathode ion source 有权
标题翻译：提高间接加热阴极离子源的性能和延长使用寿命的技术
公开(公告)号：US07491947B2
公开(公告)日：2009-02-17
申请号：US11505168
申请日：2006-08-16
申请人： Eric R. Cobb , Russell J. Low , Craig R. Chaney , Leo V. Klos
发明人： Eric R. Cobb , Russell J. Low , Craig R. Chaney , Leo V. Klos
IPC分类号： H01J27/08
CPC分类号： H01J37/08 , H01J37/302 , H01J37/3171 , H01J2237/022
摘要： A technique improving performance and lifetime of indirectly heated cathode ion sources is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving performance and lifetime of an indirectly heated cathode (IHC) ion source in an ion implanter. The method may comprise maintaining an arc chamber of the IHC ion source under vacuum during a maintenance of the ion implanter, wherein no gas is supplied to the arc chamber. The method may also comprise heating a cathode of the IHC ion source by supplying a filament with a current. The method may further comprise biasing the cathode with respect to the filament at a current level of 0.5-5 A without biasing the arc chamber with respect to the cathode. The method additionally comprise keeping a source magnet from producing a magnetic field inside the arc chamber.
摘要翻译：公开了一种提高间接加热的阴极离子源的性能和寿命的技术。在一个特定的示例性实施例中，该技术可以被实现为用于改进离子注入机中间接加热的阴极（IHC）离子源的性能和寿命的方法。该方法可以包括在维护离子注入机期间将IHC离子源的电弧室保持在真空下，其中没有气体被供应到电弧室。该方法还可以包括通过向灯丝提供电流来加热IHC离子源的阴极。该方法还可以包括以0.5-5A的电流水平相对于灯丝偏置阴极而不使电弧室相对于阴极偏置。该方法还包括保持源磁体在电弧室内产生磁场。

9. 发明授权

US07102139B2 Source arc chamber for ion implanter having repeller electrode mounted to external insulator 有权
标题翻译：用于离子注入机的源弧室，其具有安装到外部绝缘体的排斥电极
公开(公告)号：US07102139B2
公开(公告)日：2006-09-05
申请号：US11044659
申请日：2005-01-27
申请人： Russell J. Low , Eric R. Cobb , Joseph C. Olson , Leo V. Klos
发明人： Russell J. Low , Eric R. Cobb , Joseph C. Olson , Leo V. Klos
IPC分类号： H01J7/24
CPC分类号： H01J27/08
摘要： An ion implanter has a source arc chamber including a conductive end wall at a repeller end of the arc chamber, the end wall having a central portion surrounding an opening. A ceramic insulator is secured to an outer surface of the end wall, such as by peripheral screw threads engaging mating threads at the periphery of a recessed area of the end wall. A conductive repeller has a narrow shaft secured to the insulator and extending through the end wall opening, and a body disposed within the source arc chamber adjacent to the end wall. The end wall, insulator and repeller are configured to form a continuous vacuum gap between the central portion of the end wall and (i) the repeller body, (ii) the repeller shaft, and (iii) the insulator. The insulator interior surface can have a ridged cross section.
摘要翻译：离子注入机具有源电弧室，该电弧室包括在电弧室的排斥端处的导电端壁，端壁具有包围开口的中心部分。陶瓷绝缘体固定在端壁的外表面上，例如通过外周螺纹与端壁的凹陷区域的周边处的配合螺纹啮合。导电排斥器具有固定到绝缘体并延伸通过端壁开口的窄轴，以及设置在源弧室内与主体壁相邻的主体。端壁，绝缘体和推斥器构造成在端壁的中心部分与（i）推斥体之间形成连续的真空间隙，（ii）推斥轴，和（iii）绝缘体。绝缘体内表面可以具有脊状横截面。

10. 发明授权

US06984831B2 Gas flow restricting cathode system for ion implanter and related method 有权
标题翻译：用于离子注入机的气流限制阴极系统及相关方法
公开(公告)号：US06984831B2
公开(公告)日：2006-01-10
申请号：US10794850
申请日：2004-03-05
申请人： Russell J. Low , Joseph C. Olson , Curt D. Bergeron , Eric R. Cobb , Jeffrey A. Burgess
发明人： Russell J. Low , Joseph C. Olson , Curt D. Bergeron , Eric R. Cobb , Jeffrey A. Burgess
IPC分类号： H01J37/08
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/061 , H01J2237/06308 , H01J2237/082
摘要： A cathode system having a cathode element configured to extend through an aperture in a wall of an arc chamber of an ion implanter system. A gas flow through a spacing between the cathode element and the aperture is restricted by a restriction member. A method of ionizing a source gas and a cathode element incorporating the restriction member are also provided.
摘要翻译：一种具有阴极元件的阴极系统，其被配置为延伸穿过离子注入系统的电弧室的壁中的孔。通过限制部件限制通过阴极元件和孔之间的间隔的气流。还提供了一种电离源气体和结合有限制构件的阴极元件的方法。

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