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1. 发明授权

US07655932B2 Techniques for providing ion source feed materials 有权
标题翻译：提供离子源饲料的技术
公开(公告)号：US07655932B2
公开(公告)日：2010-02-02
申请号：US11776217
申请日：2007-07-11
申请人： Christopher R. Hatem , Craig R. Chaney , Eric R. Cobb , Joseph C. Olson , Chris Campbell
发明人： Christopher R. Hatem , Craig R. Chaney , Eric R. Cobb , Joseph C. Olson , Chris Campbell
IPC分类号： H01J49/10 , H01J27/02
CPC分类号： H01J27/02 , C23C14/246 , C23C14/48 , H01J37/08 , H01J37/3171 , H01J2237/006
摘要： Techniques for providing ion source feed materials are disclosed. In one particular exemplary embodiment, the techniques may be realized as a container for supplying an ion source feed material. The container may comprise an internal cavity to be pre-filled with an ion source feed material. The container may also comprise an outer body configured to be removably loaded into a corresponding housing that is coupled to an ion source chamber via a nozzle assembly. The container may further comprise an outlet to seal in the pre-filled ion source feed material, the outlet being further configured to engage with the nozzle assembly to establish a flow path between the internal cavity and the ion source chamber. The container may be configured to be a disposable component.
摘要翻译：公开了提供离子源进料的技术。在一个特定的示例性实施例中，这些技术可以被实现为用于提供离子源进料的容器。容器可以包括预先填充有离子源进料的内部空腔。容器还可以包括被配置为可移除地装载到经由喷嘴组件耦合到离子源室的相应壳体中的外主体。容器还可包括密封在预填充的离子源进料中的出口，该出口进一步构造成与喷嘴组件接合以在内腔和离子源室之间建立流路。容器可以被配置为一次性部件。

2. 发明申请

US20080169427A1 TECHNIQUES FOR PROVIDING ION SOURCE FEED MATERIALS 有权
标题翻译：提供离子源材料的技术
公开(公告)号：US20080169427A1
公开(公告)日：2008-07-17
申请号：US11776217
申请日：2007-07-11
申请人： Christopher R. HATEM , Craig R. Chaney , Eric R. Cobb , Joseph C. Olson , Chris Campbell
发明人： Christopher R. HATEM , Craig R. Chaney , Eric R. Cobb , Joseph C. Olson , Chris Campbell
IPC分类号： B01J37/30
CPC分类号： H01J27/02 , C23C14/246 , C23C14/48 , H01J37/08 , H01J37/3171 , H01J2237/006
摘要： Techniques for providing ion source feed materials are disclosed. In one particular exemplary embodiment, the techniques may be realized as a container for supplying an ion source feed material. The container may comprise an internal cavity to be pre-filled with an ion source feed material. The container may also comprise an outer body configured to be removably loaded into a corresponding housing that is coupled to an ion source chamber via a nozzle assembly. The container may further comprise an outlet to seal in the pre-filled ion source feed material, the outlet being further configured to engage with the nozzle assembly to establish a flow path between the internal cavity and the ion source chamber. The container may be configured to be a disposable component.
摘要翻译：公开了提供离子源进料的技术。在一个特定的示例性实施例中，这些技术可以被实现为用于提供离子源进料的容器。容器可以包括预先填充有离子源进料的内部空腔。容器还可以包括被配置为可移除地装载到经由喷嘴组件耦合到离子源室的相应壳体中的外主体。容器还可包括密封在预填充的离子源进料中的出口，该出口进一步构造成与喷嘴组件接合以在内腔和离子源室之间建立流路。容器可以被配置为一次性部件。

3. 发明授权

US07622722B2 Ion implantation device with a dual pumping mode and method thereof 有权
标题翻译：具有双泵浦模式的离子注入装置及其方法
公开(公告)号：US07622722B2
公开(公告)日：2009-11-24
申请号：US11866099
申请日：2007-10-02
申请人： Jonathan Gerald England , Christopher R. Hatem , Jay Thomas Scheuer , Joseph C. Olson
发明人： Jonathan Gerald England , Christopher R. Hatem , Jay Thomas Scheuer , Joseph C. Olson
IPC分类号： H01J49/10 , H01J49/24
CPC分类号： H01J27/022 , H01J37/08 , H01J37/302 , H01J37/3171 , H01J2237/006 , H01J2237/182
摘要： An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced. The ion implantation apparatus may include the ion beam source housing comprising a plurality of species for use in ion beam production. A pumping section may also be included for evacuating gas from the ion beam source housing. A controller may further be included for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production.
摘要翻译：公开了一种用于生产原子或分子离子束的双泵浦模式及其方法的离子注入装置。在一个特定的示例性实施例中，提供离子注入装置，用于控制对应于正在产生的离子束种类的离子束源壳体内的压力。离子注入装置可以包括离子束源壳体，其包括用于离子束产生的多个物质。还可以包括泵送部分以从离子束源壳体排出气体。可以进一步包括控制器，以根据对应于用于离子束产生的多种物质的种类的泵送参数来控制泵送部分。

4. 发明申请

US20080105833A1 ION IMPLANTATION DEVICE WITH A DUAL PUMPING MODE AND METHOD THEREOF 有权
标题翻译：具有双泵模式的离子植入装置及其方法
公开(公告)号：US20080105833A1
公开(公告)日：2008-05-08
申请号：US11866099
申请日：2007-10-02
申请人： Jonathan Gerald England , Christopher R. Hatem , Jay Thomas Scheuer , Joseph C. Olson
发明人： Jonathan Gerald England , Christopher R. Hatem , Jay Thomas Scheuer , Joseph C. Olson
IPC分类号： H01J37/317
CPC分类号： H01J27/022 , H01J37/08 , H01J37/302 , H01J37/3171 , H01J2237/006 , H01J2237/182
摘要： An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced. The ion implantation apparatus may include the ion beam source housing comprising a plurality of species for use in ion beam production. A pumping section may also be included for evacuating gas from the ion beam source housing. A controller may further be included for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production.
摘要翻译：公开了一种用于生产原子或分子离子束的双泵浦模式及其方法的离子注入装置。在一个特定的示例性实施例中，提供离子注入装置，用于控制对应于正在产生的离子束种类的离子束源壳体内的压力。离子注入装置可以包括离子束源壳体，其包括用于离子束产生的多个物质。还可以包括泵送部分以从离子束源壳体排出气体。可以进一步包括控制器，以根据对应于用于离子束产生的多种物质的种类的泵送参数来控制泵送部分。

5. 发明授权

US06984831B2 Gas flow restricting cathode system for ion implanter and related method 有权
标题翻译：用于离子注入机的气流限制阴极系统及相关方法
公开(公告)号：US06984831B2
公开(公告)日：2006-01-10
申请号：US10794850
申请日：2004-03-05
申请人： Russell J. Low , Joseph C. Olson , Curt D. Bergeron , Eric R. Cobb , Jeffrey A. Burgess
发明人： Russell J. Low , Joseph C. Olson , Curt D. Bergeron , Eric R. Cobb , Jeffrey A. Burgess
IPC分类号： H01J37/08
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/061 , H01J2237/06308 , H01J2237/082
摘要： A cathode system having a cathode element configured to extend through an aperture in a wall of an arc chamber of an ion implanter system. A gas flow through a spacing between the cathode element and the aperture is restricted by a restriction member. A method of ionizing a source gas and a cathode element incorporating the restriction member are also provided.
摘要翻译：一种具有阴极元件的阴极系统，其被配置为延伸穿过离子注入系统的电弧室的壁中的孔。通过限制部件限制通过阴极元件和孔之间的间隔的气流。还提供了一种电离源气体和结合有限制构件的阴极元件的方法。

6. 发明授权

US07102139B2 Source arc chamber for ion implanter having repeller electrode mounted to external insulator 有权
标题翻译：用于离子注入机的源弧室，其具有安装到外部绝缘体的排斥电极
公开(公告)号：US07102139B2
公开(公告)日：2006-09-05
申请号：US11044659
申请日：2005-01-27
申请人： Russell J. Low , Eric R. Cobb , Joseph C. Olson , Leo V. Klos
发明人： Russell J. Low , Eric R. Cobb , Joseph C. Olson , Leo V. Klos
IPC分类号： H01J7/24
CPC分类号： H01J27/08
摘要： An ion implanter has a source arc chamber including a conductive end wall at a repeller end of the arc chamber, the end wall having a central portion surrounding an opening. A ceramic insulator is secured to an outer surface of the end wall, such as by peripheral screw threads engaging mating threads at the periphery of a recessed area of the end wall. A conductive repeller has a narrow shaft secured to the insulator and extending through the end wall opening, and a body disposed within the source arc chamber adjacent to the end wall. The end wall, insulator and repeller are configured to form a continuous vacuum gap between the central portion of the end wall and (i) the repeller body, (ii) the repeller shaft, and (iii) the insulator. The insulator interior surface can have a ridged cross section.
摘要翻译：离子注入机具有源电弧室，该电弧室包括在电弧室的排斥端处的导电端壁，端壁具有包围开口的中心部分。陶瓷绝缘体固定在端壁的外表面上，例如通过外周螺纹与端壁的凹陷区域的周边处的配合螺纹啮合。导电排斥器具有固定到绝缘体并延伸通过端壁开口的窄轴，以及设置在源弧室内与主体壁相邻的主体。端壁，绝缘体和推斥器构造成在端壁的中心部分与（i）推斥体之间形成连续的真空间隙，（ii）推斥轴，和（iii）绝缘体。绝缘体内表面可以具有脊状横截面。

7. 发明授权

US08330125B2 Ion beam tuning 有权
标题翻译：离子束调谐
公开(公告)号：US08330125B2
公开(公告)日：2012-12-11
申请号：US12887068
申请日：2010-09-21
申请人： Shengwu Chang , Joseph C. Olson , Frank Sinclair , Matthew P. McClellan
发明人： Shengwu Chang , Joseph C. Olson , Frank Sinclair , Matthew P. McClellan
IPC分类号： H01J37/10
CPC分类号： H01J37/3171 , H01J37/21 , H01J2237/216 , H01J2237/24405 , H01J2237/24528 , H01J2237/24542
摘要： A beam line ion implanter includes an ion source configured to generate an ion beam, a scanner configured to scan the ion beam to produce a scanned ion beam having trajectories which diverge from a scan origin, and a focusing element having a focusing field positioned upstream of the scanner configured to focus the ion beam to a focal point at the scan origin. A method of ion beam tuning includes generating an ion beam, focusing the ion beam to a focal point positioned at a scan origin, and scanning the ion beam to produce a scanned ion beam having trajectories which diverge from the scan origin.
摘要翻译：束线离子注入机包括被配置为产生离子束的离子源，扫描器，被配置为扫描离子束以产生具有从扫描原点发散的轨迹的扫描离子束;以及聚焦元件，其具有位于扫描器被配置为将离子束聚焦到扫描原点处的焦点。离子束调谐的方法包括产生离子束，将离子束聚焦到位于扫描原点的焦点，并扫描离子束以产生具有与扫描原点分离的轨迹的扫描离子束。

8. 发明授权

US08188445B2 Ion source 有权
标题翻译：离子源
公开(公告)号：US08188445B2
公开(公告)日：2012-05-29
申请号：US12848354
申请日：2010-08-02
申请人： Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh
发明人： Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh
IPC分类号： H01J49/10 , H01J37/08 , H01J23/06
CPC分类号： H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/083 , H01J2237/0835 , Y10S438/961
摘要： An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the arc chamber. The plasma sheath modulator is configured to control a shape of a boundary between a plasma and a plasma sheath proximate the extraction aperture, wherein the plasma sheath modulator includes a semiconductor. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.
摘要翻译：离子源包括具有提取孔的电弧室和位于电弧室中的等离子体鞘调制器。等离子体鞘调制器被配置为控制靠近提取孔的等离子体和等离子体鞘之间的边界的形状，其中等离子体鞘调制器包括半导体。可以通过离子源产生具有高电流密度的良好聚焦的离子束。高电流密度离子束可以提高相关过程的吞吐量。也可以控制离子束的发射。

9. 发明授权

US08097866B2 Apparatus for measuring beam characteristics and a method thereof 有权
标题翻译：用于测量光束特性的装置及其方法
公开(公告)号：US08097866B2
公开(公告)日：2012-01-17
申请号：US12031643
申请日：2008-02-14
申请人： Joseph C. Olson , Atul Gupta
发明人： Joseph C. Olson , Atul Gupta
IPC分类号： G01T1/00
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/2446 , H01J2237/24507 , H01J2237/24528 , H01J2237/24542
摘要： An apparatus and a method for detecting particle beam characteristics are disclosed. In one embodiment, the apparatus may have a body including a first end and second end and at least one detector between the first and second ends. The apparatus may have a transparent state where a portion of the particles entering the apparatus may pass through the apparatus. The apparatus may also have a minimum transparency state where substantially all of the particles entering the apparatus may be prevented from passing through the apparatus and detected. Different transparency state may be achieved by rotating the apparatus or the detector contained therein. With the apparatus, it is possible to detect the beam properties such as the beam intensity, angle, parallelism, and a distribution of the particles in a particle beam.
摘要翻译：公开了一种用于检测粒子束特性的装置和方法。在一个实施例中，设备可以具有包括第一端和第二端的主体以及在第一端和第二端之间的至少一个检测器。该设备可以具有透明状态，其中进入设备的一部分颗粒可以通过设备。该装置还可以具有最小的透明度状态，其中可以防止进入装置的基本上所有的颗粒通过装置并被检测。可以通过旋转装置或其中包含的检测器来实现不同的透明度状态。利用该装置，可以检测诸如光束强度，角度，平行度以及颗粒束中颗粒分布的光束特性。

10. 发明申请

US20110124186A1 APPARATUS AND METHOD FOR CONTROLLABLY IMPLANTING WORKPIECES 有权
标题翻译：用于控制工件的装置和方法
公开(公告)号：US20110124186A1
公开(公告)日：2011-05-26
申请号：US12947078
申请日：2010-11-16
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Frank Sinclair , Deepak A. Ramappa , Russell Low , Atul Gupta , Kevin M. Daniels
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Frank Sinclair , Deepak A. Ramappa , Russell Low , Atul Gupta , Kevin M. Daniels
IPC分类号： H01L21/265 , G21K5/10
CPC分类号： B01J19/081 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0453 , H01J2237/1205 , H01L21/2236 , H01L31/022425 , H01L31/068 , H01L31/08 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
摘要翻译：等离子体处理装置包括等离子体源，其被配置为在等离子体室中产生等离子体，使得等离子体包含用于注入工件的离子。该装置还包括聚焦板装置，该聚焦板装置具有孔结构，其被配置为修改离开聚焦板附近的等离子体鞘的等离子体鞘的形状，使得离开孔结构的孔的离子限定聚焦离子。该设备还包括处理室，其包含与聚焦板间隔开的工件，使得在工件处的聚焦离子的固定注入区域基本上比孔更窄。该装置被配置为通过在离子注入期间扫描工件来在工件中产生多个图案化区域。

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