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1. 发明授权

US5349215A Antiblooming structure for solid-state image sensor 失效
标题翻译：固态图像传感器的抗隆起结构
公开(公告)号：US5349215A
公开(公告)日：1994-09-20
申请号：US95504
申请日：1993-07-23
申请人： Constantine N. Anagnostopoulos , Win-Chyi Chang , Eric G. Stevens , Georgia R. Torok
发明人： Constantine N. Anagnostopoulos , Win-Chyi Chang , Eric G. Stevens , Georgia R. Torok
IPC分类号： H01L27/148 , H01L27/14
CPC分类号： H01L27/14887
摘要： Solid-state image sensors, in general, comprise a photodetector for detecting radiation from the image and converting the radiation to charge carriers, and transfer means for carrying the charge carriers to an output circuit. One type of solid-state image sensor uses a CCD as both the photodetector and the transfer means. The solid-state image sensor generally includes a plurality of the CCD's arranged in spaced parallel relation to form an array. The image sensor of this disclosure utilizes only one antiblooming lateral overflow barrier. The excess signal charge of phase 1 flows into the preceding phase 2 and is saved. This eliminates the overflow barrier of phase 1 so that blooming protection is via the overflow barrier of the preceding phase 2. This results in an image sensor with blooming protection and increased charge capacity.
摘要翻译：固态图像传感器通常包括用于检测来自图像的辐射并将辐射转换为电荷载流子的光电检测器，以及用于将电荷载体携带到输出电路的转移装置。一种类型的固态图像传感器使用CCD作为光电检测器和转印装置。固态图像传感器通常包括以间隔开的平行关系布置的多个CCD，以形成阵列。本公开的图像传感器仅使用一个防侧向横向溢流屏障。相1的过量信号电荷流入前一相2并被保存。这消除了相1的溢出屏障，使得起霜保护通过前一相2的溢流屏障。这导致具有防霜保护和增加充电容量的图像传感器。

2. 发明授权

US5235196A Transfer region design for charge-coupled device image sensor 失效
标题翻译：电荷耦合器件图像传感器的传输区域设计
公开(公告)号：US5235196A
公开(公告)日：1993-08-10
申请号：US918093
申请日：1992-07-24
申请人： Constantine N. Anagnostopoulos , Herbert J. Erhardt , Eric G. Stevens , Robert H. Philbrick
发明人： Constantine N. Anagnostopoulos , Herbert J. Erhardt , Eric G. Stevens , Robert H. Philbrick
IPC分类号： H01L27/148
CPC分类号： H01L27/14831
摘要： The present invention is directed to an image sensor which comprises a body of a semiconductor material having therein a plurality of photodetectors arranged in a line and a CCD shift register extending along the line of photodetectors adjacent to but spaced from an edge of the photodetectors. The CCD shift register includes a channel region and a plurality of first and second gate electrodes extending over and insulated from the channel region. One of each of the first and second gate electrodes extends across a portion of the edge of each photodetector. Each of the first electrodes has an arm extending along the entire edge of its respective photodetector between the photodetector and the second gate electrode. A separate transfer region is in the body between the edge of each photodetector and its respective first electrode and extends along the entire edge of the photodetector. A transfer gate is over and insulated from the transfer regions.
摘要翻译：本发明涉及一种图像传感器，其包括半导体材料本体，其中具有排列成一行的多个光电检测器，以及沿着与光电检测器的边缘相邻但间隔开的光电检测器线延伸的CCD移位寄存器。 CCD移位寄存器包括沟道区和多个第一和第二栅电极，其延伸并且与沟道区绝缘。第一和第二栅电极中的每一个延伸穿过每个光电检测器的边缘的一部分。每个第一电极具有在光电检测器和第二栅电极之间沿其各自的光电检测器的整个边缘延伸的臂。单独的转移区域位于每个光电检测器的边缘和其相应的第一电极之间的本体中，并且沿着光电检测器的整个边缘延伸。转移栅极结束并与转移区域绝缘。

3. 发明申请

US20120080731A1 PHOTODETECTOR ISOLATION IN IMAGE SENSORS 审中-公开
标题翻译：图像传感器中的光电隔离
公开(公告)号：US20120080731A1
公开(公告)日：2012-04-05
申请号：US12894262
申请日：2010-09-30
申请人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
发明人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14607 , H01L27/1461 , H01L27/14645 , H01L27/14689
摘要： A first shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to a photodetector while a second shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to other electrical components in a pixel. The first and second shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer that is filled with a dielectric material. An isolation layer having the second conductivity is disposed only along a portion of a bottom and only along a sidewall of the trench immediately adjacent to the photodetector. The isolation layer is not disposed along the other portion of the bottom and along the other sidewall of the trench adjacent the photodetector. The isolation layer is not disposed along the bottom and sidewalls of the trench adjacent to the other electrical components.
摘要翻译：第一浅沟槽隔离区域设置在与半导体器件的光电探测器侧向相邻的硅半导体层中，而第二浅沟槽隔离区域设置在与半导体层中的像素中的其它电气元件横向相邻的硅半导体层中。第一和第二浅沟槽隔离区域各自包括设置在硅半导体层中的填充有电介质材料的沟槽。具有第二导电性的隔离层仅沿着底部的一部分并且仅沿着与光电检测器紧邻的沟槽的侧壁设置。隔离层不沿着底部的另一部分并且沿着邻近光电检测器的沟槽的另一个侧壁设置。绝缘层不沿着与其它电气部件相邻的沟槽的底部和侧壁设置。

4. 发明申请

US20100148230A1 TRENCH ISOLATION REGIONS IN IMAGE SENSORS 审中-公开
标题翻译：图像传感器中的分离区域
公开(公告)号：US20100148230A1
公开(公告)日：2010-06-17
申请号：US12332407
申请日：2008-12-11
申请人： Eric G. Stevens , Hung Q. Doan
发明人： Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L21/762 , H01L31/112
CPC分类号： H01L27/14689 , H01L21/76224 , H01L27/1463
摘要： Trenches are formed in a substrate or layer and a solid source doped with one or more dopants is deposited over the image sensor such that the solid source fills the one or more trenches and is disposed on the surface of the substrate. The surface of the image sensor is then planarized so that the solid source remains only in the trenches. A thermal drive operation is performed to cause at least a portion of the one or more dopants in the solid source to diffuse into the portions of the substrate or layer that are immediately adjacent to and surround the sidewall and bottom surfaces of the trenches. The diffused dopant or dopants form passivation regions that passivate the interface between the substrate or layer and the sidewall and bottom surfaces of the trenches.
摘要翻译：沟槽形成在衬底或层中，并且掺杂有一种或多种掺杂剂的固体源沉积在图像传感器上，使得固体源填充一个或多个沟槽并且设置在衬底的表面上。然后将图像传感器的表面平坦化，使得固体源仅保留在沟槽中。执行热驱动操作以使固体源中的一种或多种掺杂剂的至少一部分扩散到紧邻和围绕沟槽的侧壁和底表面的衬底或层的部分。扩散掺杂剂或掺杂剂形成钝化区域，其钝化衬底或层与沟槽的侧壁和底表面之间的界面。

5. 发明申请

US20100140728A1 LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS 有权
公开(公告)号：US20100140728A1
公开(公告)日：2010-06-10
申请号：US12609257
申请日：2009-10-30
申请人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
发明人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L31/101 , H01L21/265
CPC分类号： H01L27/14887 , H01L27/14656 , H01L27/14674 , H01L27/14683 , H01L27/1485
摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.

6. 发明申请

US20100116971A1 BACK-ILLUMINATED CMOS IMAGE SENSORS 有权
标题翻译：后置照明CMOS图像传感器
公开(公告)号：US20100116971A1
公开(公告)日：2010-05-13
申请号：US12266764
申请日：2008-11-07
申请人： John P. McCarten , Joseph R. Summa , Cristian A. Tivarus , Todd J. Anderson , Eric G. Stevens
发明人： John P. McCarten , Joseph R. Summa , Cristian A. Tivarus , Todd J. Anderson , Eric G. Stevens
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L27/14643 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14689
摘要： A back-illuminated image sensor includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors is formed in the sensor layer and a well that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer with a region including formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface between the sensor layer and the insulating layer.
摘要翻译：背照式图像传感器包括设置在电连接到传感器层的绝缘层和电路层之间的传感器层。成像区域包括在传感器层中形成多个光电检测器和跨越成像区域的阱。阱可以设置在传感器层的背面和光电检测器之间，或者阱可以是与传感器层的背面相邻形成的掩埋阱，其中区域包括形成在光电探测器和掩埋阱之间。一个或多个侧孔可以横向邻近于每个光电检测器形成。阱中的掺杂剂具有使掺杂剂积聚在传感器层和绝缘层之间的界面的传感器层侧上的分离系数。

7. 发明申请

US20090035888A1 TWO EPITAXIAL LAYERS TO REDUCE CROSSTALK IN AN IMAGE SENSOR 有权
标题翻译：两个外延层，以减少图像传感器中的CROSSTALK
公开(公告)号：US20090035888A1
公开(公告)日：2009-02-05
申请号：US12247248
申请日：2008-10-08
申请人： James P. Lavine , Eric G. Stevens
发明人： James P. Lavine , Eric G. Stevens
IPC分类号： H01L21/00 , H01L27/00
CPC分类号： H01L27/14654 , H01L27/14632 , H01L27/14687
摘要： An image sensor includes a substrate of a first conductivity type having an image area with a plurality of photosensitive sites, wherein a portion of the charge generated in response to light is collected in the pixel; and a subcollector of a second conductivity spanning the image area that collects another portion of the generated charge that would have otherwise diffused to adjacent photosensitive sites.
摘要翻译：图像传感器包括具有多个感光位置的图像区域的第一导电类型的衬底，其中响应于光产生的电荷的一部分被收集在像素中; 以及横跨图像区域的第二电导率的子集电极，其收集另外将产生的电荷的另一部分，否则其将扩散到相邻的光敏部位。

8. 发明授权

US07091532B2 Light shield process for solid-state image sensors 有权
标题翻译：固态图像传感器的光屏蔽过程
公开(公告)号：US07091532B2
公开(公告)日：2006-08-15
申请号：US11042936
申请日：2005-01-25
申请人： Eric G. Stevens
发明人： Eric G. Stevens
IPC分类号： H01L21/8238 , H01L21/336 , H01L21/76
CPC分类号： H01L27/14601 , H01L27/14806
摘要： An image sensor includes a substrate containing photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metalization structure wherein the first layer forms the light shield regions over portions of the photosensitive area as well as forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area, and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging area.
摘要翻译：图像传感器包括含有感光区域的基板; 跨越衬底的绝缘体; 以及多层金属化结构的第一和第二层，其中第一层在感光区域的部分上形成遮光区域，以及形成电路互连和阻挡区域，以防止在非接触的接触处尖峰进入衬底或栅极以及仅在非成像区域上跨越第一层的互连和屏障区域的第二层。

9. 发明授权

US06507056B1 Fast line dump structure for solid state image sensor 有权
公开(公告)号：US06507056B1
公开(公告)日：2003-01-14
申请号：US09533050
申请日：2000-03-22
申请人： Eric G. Stevens
发明人： Eric G. Stevens
IPC分类号： H01L27148
CPC分类号： H01L29/76816 , H01L27/14806 , H01L27/14887
摘要： The present invention is a structure for a fast-dump gate (FDG) and a fast-dump drain (FDD) for a charge coupled device. It is envisioned that the charge coupled device be a horizontal readout register of a solid-state image sensor. This structure uses a third layer of polysilicon (or other suitable gate material) to form the fast-dump gate which is in addition to the other two layers of gate material used to form the gates in the horizontal readout register. This allows the channel region under the fast-dump gate (FDG) to form without the use of highly-doped channel stop regions thereby eliminating any potential wells or barriers that may result in transfer inefficiency often time found with other structures.

10. 发明授权

US5585298A Self aligned antiblooming structure for solid state image sensors 失效
标题翻译：固态图像传感器的自对准防爆结构
公开(公告)号：US5585298A
公开(公告)日：1996-12-17
申请号：US415113
申请日：1995-03-31
申请人： Eric G. Stevens , Stephen L. Kosman
发明人： Eric G. Stevens , Stephen L. Kosman
IPC分类号： H01L27/148 , H01L21/70 , H01L27/00 , H01L29/768
CPC分类号： H01L27/14887
摘要： A self aligned, lateral-overflow drain antiblooming structure that is insensitive to drain bias voltages and therefore has improved insensitivity to process variations. The length of the antiblooming barrier regions are easily adjusted and determined by photolithography. The self aligned, lateral-overflow drain (LOD) antiblooming structure results in a design that saves space, and hence, improves overall sensor performance. In this structure, an antiblooming potential barrier is provided that is smaller (in volts) than the barriers that separate the pixels from one another so that excess charge will flow preferentially into the LOD as opposed to the adjacent pixels.
摘要翻译：自对准的横向溢流漏极防护结构对漏极偏置电压不敏感，因此对工艺变化的不敏感性提高。通过光刻可以容易地调节和确定防起泡屏障区域的长度。自对准的横向溢流排水（LOD）防爆结构导致节省空间的设计，从而提高整体传感器性能。在这种结构中，提供了比将像素彼此分开的屏障更小（伏特）的抗电势势垒，使得与相邻像素相反，过量电荷优先流入LOD。

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