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1. 发明申请

US20100327389A1 Back-illuminated image sensors having both frontside and backside photodetectors 审中-公开
标题翻译：具有前侧和后侧光电检测器的背照式图像传感器
公开(公告)号：US20100327389A1
公开(公告)日：2010-12-30
申请号：US12459144
申请日：2009-06-26
申请人： John P. McCarten , Cristian A. Tivarus , Joseph R. Summa
发明人： John P. McCarten , Cristian A. Tivarus , Joseph R. Summa
IPC分类号： H01L31/09
CPC分类号： H01L27/14603 , H01L27/14605 , H01L27/14632 , H01L27/1464 , H01L27/14647 , H01L27/14687 , H01L27/14689 , H01L31/035272
摘要： A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more frontside regions of the first conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the first conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of a second conductivity type is disposed in the sensor layer adjacent to the frontside of the sensor layer. A distinct plurality of backside photodetectors of the second conductivity type separate from the plurality of frontside photodetectors are formed in the sensor layer contiguous to the backside region. One or more or more channel regions of the second conductivity type are disposed in respective portions of the sensor layer between the frontside photodetector and the backside photodetector in each photodetector pair.
摘要翻译：背照式图像传感器包括第一导电类型的传感器层，其具有前侧和与前侧相对的背面。第一导电类型的一个或多个前侧区域形成在传感器层的前侧的至少一部分中。在传感器层的背面形成第一导电类型的背面区域。第二导电类型的多个前端光电检测器设置在邻近传感器层的前侧的传感器层中。在与背面区域邻接的传感器层中形成有与多个前端光电检测器分离的第二导电类型的不同多个背面光电检测器。第二导电类型的一个或多个或多个通道区域设置在每个光电检测器对中的前侧光电检测器和背面光电检测器之间的传感器层的相应部分中。

2. 发明申请

US20100060764A1 HIGH GAIN READ CIRCUIT FOR 3D INTEGRATED PIXEL 有权
标题翻译：用于3D集成像素的高增益读取电路
公开(公告)号：US20100060764A1
公开(公告)日：2010-03-11
申请号：US12206919
申请日：2008-09-09
申请人： John P. McCarten , Joseph R. Summa , Todd J. Anderson , Cristian A. Tivarus
发明人： John P. McCarten , Joseph R. Summa , Todd J. Anderson , Cristian A. Tivarus
IPC分类号： H04N5/335
CPC分类号： H01L27/14634 , H01L27/14609 , H01L27/14636 , H01L27/14641
摘要： An image sensor includes (a) a first wafer having (i) a photosensitive area; (ii) a charge-to-voltage conversion region; (b) a second wafer having (i) a first amplifier that receives a signal from the charge-to-voltage conversion region; (c) an electrical interconnect connecting the charge-to-voltage conversion region to an input of the amplifier; (d) an electrically biased shield at least partially enclosing at least a portion of the electrical interconnect.
摘要翻译：图像传感器包括（a）第一晶片，具有（i）感光区域; （ii）电荷 - 电压转换区域; （b）第二晶片，具有（i）第一放大器，其接收来自所述电荷/电压转换区域的信号; （c）将电荷 - 电压转换区域连接到放大器的输入端的电互连; （d）至少部分地包围电互连的至少一部分的电偏置屏蔽。

3. 发明申请

US20100026865A1 IMAGE SENSOR HAVING MULTIPLE SENSING LAYERS 有权
标题翻译：具有多个传感层的图像传感器
公开(公告)号：US20100026865A1
公开(公告)日：2010-02-04
申请号：US12184314
申请日：2008-08-01
申请人： Cristian A. Tivarus , John P. McCarten , Joseph R. Summa
发明人： Cristian A. Tivarus , John P. McCarten , Joseph R. Summa
IPC分类号： H04N5/335
CPC分类号： H01L27/14647 , H01L27/14621 , H01L27/14634 , H01L27/14636 , H01L27/14641 , H01L27/14652
摘要： An image sensor includes a first sensor layer having a first array of pixels and a second sensor layer having a second array of pixels. Each pixel of the first and second arrays has a photodetector for collecting charge in response to incident light, a charge-to-voltage conversion mechanism, and a transfer gate for selectively transferring charge from the photodetector to the charge-to-voltage mechanism. The first and second sensor layers each have a thicknesses to collect light with a first and second preselected ranges of wavelengths, respectively. A circuit layer is situated below the first sensor layer and has support circuitry for the pixels of the first and second sensor layers, and interlayer connectors are between the pixels of the first and second layers and the support circuitry.
摘要翻译：图像传感器包括具有第一像素阵列的第一传感器层和具有第二像素阵列的第二传感器层。第一和第二阵列的每个像素具有用于响应于入射光收集电荷的光电检测器，电荷到电压转换机构和用于选择性地将电荷从光电检测器传送到电荷到电压机构的传输门。第一和第二传感器层各自具有分别以第一和第二预选范围的波长收集光的厚度。电路层位于第一传感器层下方，并且具有用于第一和第二传感器层的像素的支撑电路，层间连接器位于第一和第二层的像素与支撑电路之间。

4. 发明申请

US20090242950A1 ACTIVE PIXEL SENSOR HAVING TWO WAFERS 有权
标题翻译：具有两个波形的主动像素传感器
公开(公告)号：US20090242950A1
公开(公告)日：2009-10-01
申请号：US12058845
申请日：2008-03-31
申请人： John P. McCarten , Joseph R. Summa , Robert M. Guidash , Todd J. Anderson
发明人： John P. McCarten , Joseph R. Summa , Robert M. Guidash , Todd J. Anderson
IPC分类号： H01L27/146
CPC分类号： H01L27/14634 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14687 , H01L27/1469
摘要： A vertically-integrated image sensor includes a sensor wafer connected to a support circuit wafer. Each pixel region on the sensor wafer includes a photodetector, a charge-to-voltage conversion mechanism, a transfer mechanism for transferring charge from the photodetector to the charge-to-voltage conversion mechanism, and a reset mechanism for discharging the charge-to-voltage conversion mechanism. The support circuit wafer includes an amplifier and other support circuitry for each pixel region on the sensor wafer. An inter-wafer connector directly connects each charge-to-voltage mechanism on the sensor wafer to a respective gate to an amplifier on the support circuit wafer.
摘要翻译：垂直集成的图像传感器包括连接到支撑电路晶片的传感器晶片。传感器晶片上的每个像素区域包括光电检测器，电荷 - 电压转换机构，用于将电荷从光电检测器传送到电荷 - 电压转换机构的传送机构，以及用于将电荷 - 电压转换机构。支持电路晶片包括用于传感器晶片上的每个像素区域的放大器和其它支持电路。晶片间连接器将传感器晶片上的每个电荷 - 电压机构直接连接到支撑电路晶片上的相应的栅极到放大器。

5. 发明申请

US20090230287A1 STACKED IMAGE SENSOR WITH SHARED DIFFUSION REGIONS IN RESPECTIVE DROPPED PIXEL POSITIONS OF A PIXEL ARRAY 有权
标题翻译：具有共享扩散区域的堆叠图像传感器在像素阵列的相关丢弃像素位置
公开(公告)号：US20090230287A1
公开(公告)日：2009-09-17
申请号：US12049579
申请日：2008-03-17
申请人： Todd J. Anderson , John P. McCarten , Joseph R. Summa , Cristian A. Tivarus , John T. Compton
发明人： Todd J. Anderson , John P. McCarten , Joseph R. Summa , Cristian A. Tivarus , John T. Compton
IPC分类号： H01L27/00
CPC分类号： H01L27/14634 , G02B3/0056 , G02B5/201 , H01L27/14603 , H01L27/14621 , H01L27/14636 , H01L27/14645 , H01L27/1469 , H04N5/37457 , H04N9/045
摘要： A CMOS image sensor or other type of image sensor comprises a sensor wafer and an underlying circuit wafer. The sensor wafer comprises a plurality of photosensitive elements arranged in respective positions of a two-dimensional array of positions in which a subset of the array positions do not include photosensitive elements but instead include diffusion regions each of which is shared by two or more of the photosensitive elements. The sensor wafer is interconnected with the circuit wafer utilizing a plurality of inter-wafer interconnects coupled to respective ones of the shared diffusion regions in respective ones of the array positions that do not include photosensitive elements. The image sensor may be implemented in a digital camera or other type of image capture device.
摘要翻译： CMOS图像传感器或其他类型的图像传感器包括传感器晶片和底层电路晶片。传感器晶片包括布置在二维阵列阵列的相应位置的多个光敏元件，其中阵列位置的子集不包括光敏元件，而是包括扩散区域，每个扩散区域由两个或更多个光敏元件。传感器晶片与电路晶片互连，利用多个晶片间互连，其耦合到不包括光敏元件的相应阵列位置中的相应一个共用扩散区。图像传感器可以在数字照相机或其他类型的图像捕获装置中实现。

6. 发明授权

US06777661B2 Interlined charge-coupled device having an extended dynamic range 失效
标题翻译：具有扩展动态范围的中间电荷耦合器件
公开(公告)号：US06777661B2
公开(公告)日：2004-08-17
申请号：US10098859
申请日：2002-03-15
申请人： Joseph R. Summa , Christopher Parks
发明人： Joseph R. Summa , Christopher Parks
IPC分类号： H01L2700
CPC分类号： H01L27/14812 , H01L27/14627
摘要： An image sensor includes (a) a plurality of pixels each having (i) a plurality of photosensitive areas having a first sensitivity to light for forming a first sensitivity area; (ii) a plurality of charge-coupled devices respectively adjacent the photosensitive areas having a second sensitivity to light for forming a second sensitivity area; wherein the second sensitivity area is less sensitive to light than the first sensitivity area so that the second sensitivity area saturates after the first sensitivity area saturates; (iii) a first transfer mechanism for permitting electrons to be passed from the first sensitivity area to the second sensitivity area; and (b) a second transfer mechanism for moving electrons through the plurality of charge-coupled devices.
摘要翻译：一种图像传感器包括：（a）多个像素，每个像素具有：（i）对光形成第一敏感度的多个感光区域，用于形成第一灵敏度区域; （ii）多个电荷耦合器件，分别邻近具有第二灵敏度的光的感光区域以形成第二灵敏度区域; 其中所述第二灵敏度区域比所述第一灵敏度区域对光敏感度较小，使得所述第二灵敏度区域在所述第一灵敏度区域饱和之后饱和; （iii）允许电子从第一灵敏度区域传递到第二灵敏度区域的第一传送机构; 和（b）用于使电子移动通过多个电荷耦合器件的第二转移机构。

7. 发明申请

US20110156195A1 Interwafer interconnects for stacked CMOS image sensors 审中-公开
标题翻译：用于堆叠CMOS图像传感器的Interwafer互连
公开(公告)号：US20110156195A1
公开(公告)日：2011-06-30
申请号：US12655551
申请日：2009-12-31
申请人： Cristian A. Tivarus , John P. McCarten , Joseph R. Summa
发明人： Cristian A. Tivarus , John P. McCarten , Joseph R. Summa
IPC分类号： H01L27/146
CPC分类号： H01L27/14634 , H01L27/14603 , H01L27/14605 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14643
摘要： An image sensor includes a sensor wafer and a circuit wafer electrically connected to the sensor wafer. The sensor wafer includes unit cells with each unit cell having at least one photodetector and a charge-to-voltage conversion region. The circuit wafer includes unit cells with each unit cell having an electrical node that is associated with each unit cell on the sensor wafer. An inter-wafer interconnect is connected between each charge-to-voltage conversion region on the sensor wafer and a respective electrical node on the circuit wafer. A location of a portion of the unit cells on the sensor wafer and a location of a corresponding portion of the unit cells on the circuit wafer are shifted a predetermined distance with respect to the locations of the remaining unit cells on the sensor and circuit wafers.
摘要翻译：图像传感器包括传感器晶片和电连接到传感器晶片的电路晶片。传感器晶片包括具有每个单元电池的单元电池，其具有至少一个光电检测器和电荷至电压转换区域。电路晶片包括单元单元，每个单元具有与传感器晶片上的每个单位单元相关联的电节点。晶片间互连连接在传感器晶片上的每个电荷 - 电压转换区域和电路晶片上的相应的电节点之间。传感器晶片上的单位单元的一部分的位置和电路晶片上的单位单元的对应部分的位置相对于传感器和电路晶片上的剩余单位单元的位置移动预定距离。

8. 发明申请

US20100330728A1 Method of aligning elements in a back-illuminated image sensor 审中-公开
标题翻译：在背照式图像传感器中对准元件的方法
公开(公告)号：US20100330728A1
公开(公告)日：2010-12-30
申请号：US12459044
申请日：2009-06-26
申请人： John P. McCarten , Cristian A. Tivarus , Joseph R. Summa
发明人： John P. McCarten , Cristian A. Tivarus , Joseph R. Summa
IPC分类号： H01L31/0232
CPC分类号： H01L27/14687 , H01L27/1464
摘要： A back-illuminated image sensor includes a sensor layer disposed between a circuit layer adjacent to a frontside of the sensor layer and a layer disposed on a backside of the sensor layer. One or more first alignment marks are formed in a layer in the circuit layer. A masking layer is aligned to the one or more first alignment marks. The masking layer includes openings that define locations for one or more second alignment marks. The one or more second alignment marks are then formed in or through the layer disposed on a backside of a sensor layer. One or more elements are formed in or on the backside of the sensor layer. The one or more elements are aligned to one or more second alignment marks.
摘要翻译：背照式图像传感器包括设置在与传感器层的前侧相邻的电路层与设置在传感器层的背面之间的层之间的传感器层。一个或多个第一对准标记形成在电路层中的一层中。掩模层与一个或多个第一对准标记对准。掩模层包括限定一个或多个第二对准标记的位置的开口。一个或多个第二对准标记然后形成在或设置在传感器层的背面上的层中。一个或多个元件形成在传感器层的背面中或其上。一个或多个元件与一个或多个第二对准标记对准。

9. 发明申请

US20100327391A1 BACK-ILLUMINATED IMAGE SENSOR WITH ELECTRICALLY BIASED FRONTSIDE AND BACKSIDE 审中-公开
标题翻译：背面照明的图像传感器，具有电动偏心的FRONTSIDE和背面
公开(公告)号：US20100327391A1
公开(公告)日：2010-12-30
申请号：US12492343
申请日：2009-06-26
申请人： John P. McCarten , Cristian A. Tivarus , Joseph R. Summa
发明人： John P. McCarten , Cristian A. Tivarus , Joseph R. Summa
IPC分类号： H01L27/146
CPC分类号： H01L27/14645 , H01L27/14609 , H01L27/1464
摘要： A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more regions of a second conductivity type are formed in at least a portion of the sensor layer adjacent to the frontside. The one or more regions are connected to a voltage terminal for biasing these regions to a predetermined voltage. A backside well of the second conductivity type is formed in the sensor layer adjacent to the backside. The backside well is electrically connected to another voltage terminal for biasing the backside well at a second predetermined voltage that is different from the first predetermined voltage.
摘要翻译：背照式图像传感器包括第一导电类型的传感器层，其具有前侧和与前侧相对的背面。第二导电类型的一个或多个区域形成在邻近前侧的传感器层的至少一部分中。一个或多个区域连接到电压端子，用于将这些区域偏置到预定电压。第二导电类型的背面孔形成在邻近背面的传感器层中。背面孔电连接到另一个电压端子，用于以与第一预定电压不同的第二预定电压来偏压背面阱。

10. 发明申请

US20100327390A1 BACK-ILLUMINATED IMAGE SENSOR WITH ELECTRICALLY BIASED CONDUCTIVE MATERIAL AND BACKSIDE WELL 审中-公开
标题翻译：带电动传导材料和背面的背面照明的图像传感器
公开(公告)号：US20100327390A1
公开(公告)日：2010-12-30
申请号：US12492336
申请日：2009-06-26
申请人： John P. McCarten , Cristian A. Tivarus , Joseph R. Summa
发明人： John P. McCarten , Cristian A. Tivarus , Joseph R. Summa
IPC分类号： H01L31/09
CPC分类号： H01L27/1463 , H01L27/1464
摘要： Back-illuminated image sensors include one or more contact implant regions disposed adjacent to a backside of a sensor layer. An electrically conductive material, including, but not limited to, a conductive lightshield, is disposed over the backside of the sensor layer. A backside well is formed in the sensor layer adjacent to the backside, and an insulating layer is disposed over the surface of the backside. Contacts formed in the insulating layer electrically connect the electrically conducting material to respective contact implant regions. At least a portion of the contact implant regions are arranged in a shape that corresponds to one or more pixel edges.
摘要翻译：背照式图像传感器包括邻近传感器层的背面设置的一个或多个接触注入区域。包括但不限于导电遮光罩的导电材料设置在传感器层的背面之上。在与背面相邻的传感器层中形成背面孔，并且在背面的表面上设置绝缘层。在绝缘层中形成的触点将导电材料电连接到相应的接触注入区域。接触植入区域的至少一部分被布置成对应于一个或多个像素边缘的形状。

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