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1. 发明授权

US07391001B2 Thin lightshield process for solid-state image sensors 有权
标题翻译：固态图像传感器的薄型遮光罩工艺
公开(公告)号：US07391001B2
公开(公告)日：2008-06-24
申请号：US11068358
申请日：2005-02-28
申请人： David N. Nichols , Eric G. Stevens , Stephen L. Kosman
发明人： David N. Nichols , Eric G. Stevens , Stephen L. Kosman
IPC分类号： H01L21/00
CPC分类号： H01L27/14623 , H01L27/14636 , H01L27/14685
摘要： An image sensor includes a substrate having photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metallization structure, wherein the first layer forms light shield regions over selected portions of the photosensitive area as well forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area; and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging areas and the second layer overlays edges of the first layer.
摘要翻译：图像传感器包括具有感光区域的基板; 跨越衬底的绝缘体; 以及多层金属化结构的第一和第二层，其中所述第一层在所述感光区域的选定部分上形成光屏蔽区域，并形成电路互连和阻挡区域，以防止尖端进入衬底或在非接触的接触处的栅极成像面积并且第二层仅在非成像区域上跨越第一层的互连和阻挡区域，并且第二层覆盖第一层的边缘。

2. 发明授权

US5585298A Self aligned antiblooming structure for solid state image sensors 失效
标题翻译：固态图像传感器的自对准防爆结构
公开(公告)号：US5585298A
公开(公告)日：1996-12-17
申请号：US415113
申请日：1995-03-31
申请人： Eric G. Stevens , Stephen L. Kosman
发明人： Eric G. Stevens , Stephen L. Kosman
IPC分类号： H01L27/148 , H01L21/70 , H01L27/00 , H01L29/768
CPC分类号： H01L27/14887
摘要： A self aligned, lateral-overflow drain antiblooming structure that is insensitive to drain bias voltages and therefore has improved insensitivity to process variations. The length of the antiblooming barrier regions are easily adjusted and determined by photolithography. The self aligned, lateral-overflow drain (LOD) antiblooming structure results in a design that saves space, and hence, improves overall sensor performance. In this structure, an antiblooming potential barrier is provided that is smaller (in volts) than the barriers that separate the pixels from one another so that excess charge will flow preferentially into the LOD as opposed to the adjacent pixels.
摘要翻译：自对准的横向溢流漏极防护结构对漏极偏置电压不敏感，因此对工艺变化的不敏感性提高。通过光刻可以容易地调节和确定防起泡屏障区域的长度。自对准的横向溢流排水（LOD）防爆结构导致节省空间的设计，从而提高整体传感器性能。在这种结构中，提供了比将像素彼此分开的屏障更小（伏特）的抗电势势垒，使得与相邻像素相反，过量电荷优先流入LOD。

3. 发明授权

US07402787B2 Method of thin lightshield process for solid-state image sensors 有权
标题翻译：固态图像传感器薄透镜方法
公开(公告)号：US07402787B2
公开(公告)日：2008-07-22
申请号：US11927870
申请日：2007-10-30
申请人： David N. Nichols , Eric G. Stevens , Stephen L. Kosman
发明人： David N. Nichols , Eric G. Stevens , Stephen L. Kosman
IPC分类号： H01L21/00
CPC分类号： H01L27/14623 , H01L27/14636 , H01L27/14685
摘要： An image sensor includes a substrate having photosensitive areas; an insulator spanning at least a portion of the substrate; and a first and second layer of a multi-layer metallization structure, wherein the first layer forms light shield regions over selected portions of the photosensitive area as well forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area; and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging areas and the second layer overlays edges of the first layer.
摘要翻译：图像传感器包括具有感光区域的基板; 跨越所述基板的至少一部分的绝缘体; 以及多层金属化结构的第一和第二层，其中所述第一层在所述感光区域的选定部分上形成光屏蔽区域，并形成电路互连和阻挡区域，以防止尖端进入衬底或在非接触的接触处的栅极成像面积并且第二层仅在非成像区域上跨越第一层的互连和阻挡区域，并且第二层覆盖第一层的边缘。

4. 发明授权

US5292682A Method of making two-phase charge coupled device 失效
标题翻译：制造两相电荷耦合器件的方法
公开(公告)号：US5292682A
公开(公告)日：1994-03-08
申请号：US86072
申请日：1993-07-06
申请人： Eric G. Stevens , Stephen L. Kosman , Paul L. Roselle
发明人： Eric G. Stevens , Stephen L. Kosman , Paul L. Roselle
IPC分类号： H01L21/339 , H01L29/423
CPC分类号： H01L29/66954 , H01L29/42396 , Y10S148/131
摘要： A method of making a two-phase charge coupled device (CCD) includes forming a layer of a conductive material over and insulated from the surface of a body of a semiconductor material of one conductivity type having a channel region of the opposite conductivity type in the body and extending to the surface. Sections of a first masking layer are formed on the conductive material layer spaced along the channel region. A conductivity modifying dopant is implanted into the channel region through the spaces between the sections of the first masking layer. A layer of a second masking layer is formed over the sections of the first masking layer and on the surface of the conductive material layer in the spaces between the sections of the first masking layer. A layer of indium-tin oxide (ITO) is formed over the portions of the second masking layer which extend across the ends of the sections of the first masking layer, and a layer of carbon is formed on the second masking layer between the ITO layers. The ITO layers along the ends of the sections of the first masking layer are then removed, and exposed portions of the second masking layer are removed. The portions of the conductive material layer under the removed portions of the second masking layer are then removed so as to leave the conductive material layer divided into individual very closely spaced apart (submicron spacing) gate electrodes.
摘要翻译：制造两相电荷耦合器件（CCD）的方法包括在具有相反导电类型的沟道区域的一种导电类型的半导体材料的主体的表面上形成绝缘层，该层具有相反导电类型的沟道区域身体并延伸到表面。第一掩蔽层的部分形成在沿着沟道区间隔开的导电材料层上。电导率修饰掺杂剂通过第一掩模层的部分之间的间隙注入沟道区。在第一掩模层的各部分之间和导电材料层的表面上形成第二掩模层，该第一掩蔽层在第一掩蔽层的部分之间的空间中。在第二掩模层的跨越第一掩模层的部分的端部延伸的部分上形成一层氧化铟锡（ITO），并且在ITO层之间的第二掩蔽层上形成一层碳。然后去除沿着第一掩模层的部分端部的ITO层，并且去除第二掩模层的暴露部分。然后去除第二掩模层的去除部分之下的导电材料层的部分，以使导电材料层分成单独非常紧密间隔（亚微米间隔）的栅电极。

5. 发明授权

US06306676B1 Method of making self-aligned, high-enegry implanted photodiode for solid-state image sensors 失效
标题翻译：制造用于固态图像传感器的自对准高掺杂光电二极管的方法
公开(公告)号：US06306676B1
公开(公告)日：2001-10-23
申请号：US08628063
申请日：1996-04-04
申请人： Eric G. Stevens , Stephen L. Kosman , David L. Losee , James P. Lavine
发明人： Eric G. Stevens , Stephen L. Kosman , David L. Losee , James P. Lavine
IPC分类号： H01L2100
CPC分类号： H01L27/14812 , H01L27/14683 , H01L27/14843
摘要： A method and apparatus of making high energy implanted photodiode that is self aligned with the transfer gate, the high energy implant is defined by providing a substrate, or well, of a first conductivity type, defining a charge coupled device within the substrate, or well, such that gate electrode layers are allowed to exist over areas to contain photodiodes during construction of the charge coupled device, patterning a masking layer to block high energy implants such that openings in the masking layer are formed over the areas of the photodiodes, anisotropically etching down through the gate electrode over the photodiodes to the gate dielectric material, implanting photodiodes with high-energy ions of a second conductivity type opposite the first conductivity type and creating a pinned photodiode by employing a shallow implant of the first conductivity type. The apparatus made by this method yields a photodiode employing high energy ions to form the P/N junction that is self aligned with the transfer gate.
摘要翻译：一种制造与传输栅极自对准的高能量注入光电二极管的方法和装置，高能量注入是通过提供第一导电类型的衬底或阱来限定的，该衬底或阱限定衬底或阱内的电荷耦合器件，使得栅极电极层在电荷耦合器件的构造期间允许存在于包含光电二极管的区域上，构图掩模层以阻挡高能量注入，使得掩模层中的开口形成在光电二极管的区域上，各向异性蚀刻向下通过光电二极管上的栅电极到栅介电材料，用与第一导电类型相反的第二导电类型的高能离子注入光电二极管，并通过采用第一导电类型的浅埋入物产生钉扎光电二极管。通过该方法制造的装置产生使用高能离子的光电二极管，以形成与传输门自对准的P / N结。

6. 发明授权

US06878919B1 Thin lightshield process for solid-state image sensors 有权
标题翻译：固态图像传感器的薄型遮光罩工艺
公开(公告)号：US06878919B1
公开(公告)日：2005-04-12
申请号：US10833386
申请日：2004-04-28
申请人： David N. Nichols , Eric G. Stevens , Stephen L. Kosman
发明人： David N. Nichols , Eric G. Stevens , Stephen L. Kosman
IPC分类号： H01L21/00 , H01L21/4763 , H01L27/146 , H01L31/02
CPC分类号： H01L27/14623 , H01L27/14636 , H01L27/14685
摘要： An image sensor includes a substrate having photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metallization structure, wherein the first layer forms light shield regions over selected portions of the photosensitive area as well forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area; and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging areas and the second layer overlays edges of the first layer.
摘要翻译：图像传感器包括具有感光区域的基板; 跨越衬底的绝缘体; 以及多层金属化结构的第一和第二层，其中所述第一层在所述感光区域的选定部分上形成光屏蔽区域，并形成电路互连和阻挡区域，以防止在非接触的接触处尖峰进入衬底或栅极成像面积并且第二层仅在非成像区域上跨越第一层的互连和阻挡区域，并且第二层覆盖第一层的边缘。

7. 发明授权

US5298448A Method of making two-phase buried channel planar gate CCD 失效
标题翻译：制造两相埋管平面栅极CCD的方法
公开(公告)号：US5298448A
公开(公告)日：1994-03-29
申请号：US995393
申请日：1992-12-18
申请人： Eric G. Stevens , Stephen L. Kosman
发明人： Eric G. Stevens , Stephen L. Kosman
IPC分类号： H01L29/762 , H01L21/339 , H01L29/768
CPC分类号： H01L29/66954 , H01L29/76841 , Y10S438/947
摘要： The present invention is directed to a method of making a true two-phase CCD using a single layer (level) of the conductive material for the gate electrodes to provide a planar structure. The method includes using L-shaped masking layers having a submicron length of a bottom portion between two masking layers of silicon dioxide on and spaced along a surface of a conductive layer. The conductive layer is over and insulated from a surface of a body of a semiconductor material having a channel region therein. The L-shaped masking layers are removed to expose a spaced narrow portions of the conductive layer. The conductive layer is then etched completely therethrough at each exposed portion to divide the conductive layer into gate electrodes which are spaced apart by submicron width gaps.
摘要翻译：本发明涉及一种使用用于栅电极的导电材料的单层（层）制造真正的两相CCD以提供平面结构的方法。该方法包括在导电层的表面上并沿间隔开的二氧化硅屏蔽层之间使用具有底部的亚微米长度的L形掩模层。导电层与其中具有沟道区的半导体材料的主体的表面结合并绝缘。去除L形掩模层以露出导电层的间隔的狭窄部分。然后，在每个暴露部分，完全蚀刻导电层，以将导电层划分成由亚微米宽度间隔间隔开的栅电极。

8. 发明授权

US5114872A Forming planar ITO gate electrode array structures 失效
标题翻译：形成平面ITO栅电极阵列结构
公开(公告)号：US5114872A
公开(公告)日：1992-05-19
申请号：US663996
申请日：1991-03-04
申请人： Paul L. Roselle , Stephen L. Kosman , Patricia A. Mahns
发明人： Paul L. Roselle , Stephen L. Kosman , Patricia A. Mahns
IPC分类号： H01L21/339 , H01L27/148 , H01L31/18
CPC分类号： H01L29/66954 , H01L27/148 , H01L31/1884 , Y02E10/50 , Y10S148/106
摘要： A method of forming a planar ITO gate electrode structure with sub-micron spacing includes forming L-shaped nitride spacer portions.
摘要翻译：形成具有亚微米间隔的平面ITO栅电极结构的方法包括形成L形氮化物间隔物部分。

9. 发明授权

US06924472B2 Image sensor with improved optical response uniformity 有权
标题翻译：具有改善光学响应均匀性的图像传感器
公开(公告)号：US06924472B2
公开(公告)日：2005-08-02
申请号：US10292344
申请日：2002-11-12
申请人： David L. Losee , Stephen L. Kosman
发明人： David L. Losee , Stephen L. Kosman
IPC分类号： H01L27/14 , H01L27/148 , H04N5/365 , H04N5/372 , H01L31/00
CPC分类号： H01L27/14812
摘要： An image sensor includes a semiconductor substrate; a photosensor having, a first photosensing region including a first stack of one or more layers of transparent materials covering the substrate, the first photosensing region having a spectral response having minima and maxima as a function of wavelength of light; a second photosensing region including a second stack of one or more layers of transparent materials covering the substrate, the second photosensing region having a spectral response having maxima and minima; and a third photosensing region including a third stack of one or more layers of transparent materials covering the substrate, the third photosensing region having a spectral response having maxima and minima; and wherein at least one maximum or minimum of the spectral response of the separate regions is matched with a minimum or maximum such that the average spectral response of the photosensor has less variation with wavelength of light than the individual spectral responses of each of the separate photosensing regions.
摘要翻译：图像传感器包括半导体衬底; 光传感器具有第一光敏区域，所述第一光敏区域包括覆盖所述衬底的一层或多层透明材料的第一堆叠，所述第一光敏区域具有作为光的波长的函数的最小值和最大值的光谱响应; 第二感光区域，其包括覆盖所述基板的一层或多层透明材料的第二层叠层，所述第二感光区域具有最大值和最小值的光谱响应; 以及第三感光区域，其包括覆盖所述衬底的一层或多层透明材料的第三堆叠，所述第三光敏区域具有最大和最小值的光谱响应; 并且其中分离区域的光谱响应的至少一个最大值或最小值与最小值或最大值匹配，使得光电传感器的平均光谱响应与光波长相比具有比每个单独光敏的单个光谱响应更小的变化地区。

10. 发明授权

US5340438A Low temperature insitu image reversal process for microelectric fabrication 失效
标题翻译：微电子制造的低温图像反转过程
公开(公告)号：US5340438A
公开(公告)日：1994-08-23
申请号：US73211
申请日：1993-06-07
申请人： Paul L. Roselle , Stephen L. Kosman
发明人： Paul L. Roselle , Stephen L. Kosman
IPC分类号： H01L21/033 , H01L21/3213 , H01L31/18 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/0337 , H01L21/0332 , H01L21/32136 , H01L31/1884 , Y02E10/50
摘要： An insitu image reversal process which uses a sacrificial coating of indium tin oxide and simultaneously deposits amorphous carbon in openings patterned in the ITO while removing the deposited ITO to expose the underlying coating, thereby completing image reversal.
摘要翻译：使用铟锡氧化物的牺牲涂层并同时在ITO中图案化的开口中沉积无定形碳的图像反转方法，同时移除沉积的ITO以暴露下面的涂层，从而完成图像反转。

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