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1. 发明授权

US09330911B2 Light emitting device having group III-nitride current spreading layer doped with transition metal or comprising transition metal nitride 有权
标题翻译：具有掺杂有过渡金属或包含过渡金属氮化物的III族氮化物电流扩散层的发光器件
公开(公告)号：US09330911B2
公开(公告)日：2016-05-03
申请号：US13215122
申请日：2011-08-22
申请人： Jianping Zhang , Chunhui Yan
发明人： Jianping Zhang , Chunhui Yan
IPC分类号： H01L33/06 , H01L21/02 , H01L33/14 , H01L33/10 , H01L33/32
CPC分类号： H01L21/0262 , H01L21/0242 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02581 , H01L33/10 , H01L33/14 , H01L33/32
摘要： A light-emitting device, such as a light-emitting diode (LED), has a group III-nitride current spreading layer which is either doped with transition metal, or comprises alternating transition metal nitride layer and group III-nitride layer. Also provided is a light-emitting device, such as a light-emitting diode (LED), having a quantum well doped with transition metal. Also provided is a method of forming transition-metal containing AlInGaN electrical conductive material.
摘要翻译：诸如发光二极管（LED）的发光器件具有掺杂有过渡金属的III族氮化物电流扩展层，或者包括交替的过渡金属氮化物层和III族氮化物层。还提供了具有掺杂有过渡金属的量子阱的诸如发光二极管（LED）的发光器件。还提供了形成含有过渡金属的AlInGaN导电材料的方法。

2. 发明授权

US08421057B2 Light-emitting devices with improved active-region 有权
标题翻译：具有改善的活性区域的发光器件
公开(公告)号：US08421057B2
公开(公告)日：2013-04-16
申请号：US12824097
申请日：2010-06-25
申请人： Chunhui Yan , Jianping Zhang , Ying Liu , Fanghai Zhao
发明人： Chunhui Yan , Jianping Zhang , Ying Liu , Fanghai Zhao
IPC分类号： H01L33/04
CPC分类号： H01L33/64 , H01L33/06 , H01L33/24
摘要： A light-emitting device comprises an active-region sandwiched between an n-type layer and a p-type layer, that allows lateral carrier injection into the active-region so as to reduce heat generation in the active-region and to minimize additional forward voltage increase associated with bandgap discontinuity. In some embodiments, the active-region is a vertically displaced multiple-quantum-well (MQW) active-region. A method for fabricating the same is also provided.
摘要翻译：发光器件包括夹在n型层和p型层之间的有源区，其允许横向载流子注入到有源区中，以便减少有源区中的发热并使附加的前向最小化电压增加与带隙不连续相关。在一些实施例中，有源区是垂直移位的多量子阱（MQW）活性区。还提供了一种制造该方法的方法。

3. 发明申请

US20120267658A1 LARGE-AREA LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：大面积发光装置及其制造方法
公开(公告)号：US20120267658A1
公开(公告)日：2012-10-25
申请号：US13090918
申请日：2011-04-20
申请人： Jianping Zhang , Chunhui Yan
发明人： Jianping Zhang , Chunhui Yan
IPC分类号： H01L33/46 , H01L33/02
CPC分类号： H01L33/38 , H01L33/40 , H01L33/46
摘要： A III-nitride light emitting device having a substrate with a conductive grid made of conductive lines formed thereon. An active-region is sandwiched between an n-type layer and a p-type layer forming an LED structure, and the conductive grid is in ohmic contact with the n-type layer. Also provided is a method for fabricating the same.
摘要翻译：一种III族氮化物发光器件，具有由其上形成有导电线的导电栅格的基板。有源区夹在n型层和形成LED结构的p型层之间，导电栅与n型层欧姆接触。还提供了制造该方法的方法。

4. 发明申请

US20120205616A1 DEFECT-CONTROLLING STRUCTURE FOR EPITAXIAL GROWTH, LIGHT EMITTING DEVICE CONTAINING DEFECT-CONTROLLING STRUCTURE, AND METHOD OF FORMING THE SAME 有权
标题翻译：外延生长缺陷控制结构，含有缺陷控制结构的发光装置及其形成方法
公开(公告)号：US20120205616A1
公开(公告)日：2012-08-16
申请号：US13028055
申请日：2011-02-15
申请人： Jianping Zhang , Hongmei Wang , Chunhui Yan
发明人： Jianping Zhang , Hongmei Wang , Chunhui Yan
IPC分类号： H01L33/06 , B82Y40/00 , B82Y99/00
CPC分类号： H01L33/0075 , B82Y10/00 , B82Y30/00 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02601 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/025 , H01L33/06 , H01L33/12
摘要： A method for reducing dislocations or other defects in a light emitting device, such as light emitting diode (LED), by in-situ introducing nanoparticles into at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A light emitting device is provided, and nanoparticles are dispensed in-situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device.
摘要翻译：通过将纳米颗粒原位引入到缺陷控制层，n型层，p型中的至少一种中，减少诸如发光二极管（LED）的发光器件中的位错或其它缺陷的方法层和发光器件的量子阱。提供了一种发光器件，并且纳米颗粒在发光器件的缺陷控制层，n型层，p型层和量子阱中的至少一个中被原位分配。

5. 发明授权

US09184344B2 Lighting-emitting device with nanostructured layer and method for fabricating the same 有权
标题翻译：具有纳米结构层的发光装置及其制造方法
公开(公告)号：US09184344B2
公开(公告)日：2015-11-10
申请号：US13358438
申请日：2012-01-25
申请人： Jianping Zhang , Hongmei Wang , Chunhui Yan , Wen Wang , Ying Liu
发明人： Jianping Zhang , Hongmei Wang , Chunhui Yan , Wen Wang , Ying Liu
IPC分类号： H01L33/32 , H01L33/16 , B82Y20/00 , B82Y40/00
CPC分类号： H01L33/16 , B82Y20/00 , B82Y40/00 , H01L33/32
摘要： A light emitting device has a nanostructured layer with nanovoids. The nanostructured layer can be provided below and adjacent to active region or on a substrate or a template below an n-type layer for the active region, so as to reduce strain between epitaxial layers in the light emitting device. A method of manufacturing the same is provided.
摘要翻译：发光器件具有纳米结构的纳米结构层。纳米结构层可以设置在有源区的下方并且邻近有源区的n型层下方的衬底或模板上，以便减少发光器件中的外延层之间的应变。提供了制造该方法的方法。

6. 发明授权

US08723159B2 Defect-controlling structure for epitaxial growth, light emitting device containing defect-controlling structure, and method of forming the same 有权
标题翻译：用于外延生长的缺陷控制结构，含有缺陷控制结构的发光器件及其形成方法
公开(公告)号：US08723159B2
公开(公告)日：2014-05-13
申请号：US13028055
申请日：2011-02-15
申请人： Jianping Zhang , Hongmei Wang , Chunhui Yan
发明人： Jianping Zhang , Hongmei Wang , Chunhui Yan
IPC分类号： H01L33/12
CPC分类号： H01L33/0075 , B82Y10/00 , B82Y30/00 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02601 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/025 , H01L33/06 , H01L33/12
摘要： A method for reducing dislocations or other defects in a light emitting device, such as light emitting diode (LED), by in-situ introducing nanoparticles into at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A light emitting device is provided, and nanoparticles are dispensed in-situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device.
摘要翻译：通过将纳米颗粒原位引入到缺陷控制层，n型层，p型中的至少一种中，减少诸如发光二极管（LED）的发光器件中的位错或其它缺陷的方法层和发光器件的量子阱。提供了一种发光器件，并且纳米颗粒在发光器件的缺陷控制层，n型层，p型层和量子阱中的至少一个中被原位分配。

7. 发明授权

US08476652B2 Three-dimensional light-emitting devices and method for fabricating the same 有权
标题翻译：三维发光装置及其制造方法
公开(公告)号：US08476652B2
公开(公告)日：2013-07-02
申请号：US12848053
申请日：2010-07-30
申请人： Chunhui Yan , Jianping Zhang , Ying Liu , Fanghai Zhao , Kevin Ma
发明人： Chunhui Yan , Jianping Zhang , Ying Liu , Fanghai Zhao , Kevin Ma
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L27/153 , H01L33/007 , H01L33/20 , H01L33/24 , H01L33/32
摘要： A three-dimensional LED structure with vertically displaced active-region includes at least two groups of vertically displaced surfaces on a non-planar substrate. The first group of surfaces are separated from the second group of surfaces by a vertical distance in the growth direction of the LED structure. The first group of surfaces are connected to the second group of surfaces by sidewalls, respectively. The sidewalls can be inclined or vertical and have a sufficient height so that a layer such as an n-type layer, an active-region, or a p-type layer in a first LED structure deposited on the first group of surfaces and a corresponding layer such as an n-type layer, an active-region, or a p-type layer in a second LED structure deposited on the second group of surfaces are separated by the sidewalls. The two groups of surfaces may be vertically displaced from each other in certain areas of an LED chip, while merge into an integral surface in other areas. A method for fabricating the three-dimensional LED structure is also provided.
摘要翻译：具有垂直位移的有源区的三维LED结构在非平面衬底上包括至少两组垂直移位的表面。第一组表面在LED结构的生长方向上与第二组表面分离一个垂直距离。第一组表面分别通过侧壁连接到第二组表面。侧壁可以是倾斜的或垂直的并且具有足够的高度，使得在第一组表面上沉积的第一LED结构中的诸如n型层，有源区或p型层的层和相应的在第二组表面上沉积的第二LED结构中的诸如n型层，有源区或p型层的层被侧壁隔开。两组表面可以在LED芯片的某些区域中彼此垂直位移，同时在其他区域中合并成一个整体表面。还提供了一种用于制造三维LED结构的方法。

8. 发明授权

US08378367B2 Light-emitting devices with vertical light-extraction mechanism and method for fabricating the same 有权
标题翻译：具有垂直光提取机构的发光装置及其制造方法
公开(公告)号：US08378367B2
公开(公告)日：2013-02-19
申请号：US12761708
申请日：2010-04-16
申请人： Chunhui Yan , Jianping Zhang
发明人： Chunhui Yan , Jianping Zhang
IPC分类号： H01L33/10
CPC分类号： H01L33/24 , H01L33/08
摘要： A light-emitting device comprises a lattice structure to minimize the horizontal waveguide effect by reducing light traveling distance in the light-absorption medium of the light-emitting devices, and to enhance light extraction from the light-emitting layer. The lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units. The area units are completely isolated or partially separated from each other by the sidewalls. Also provided is a method of fabricating a light-emitting device that comprises a lattice structure, which lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units.
摘要翻译：发光器件包括通过减少发光器件的光吸收介质中的光行进距离来最小化水平波导效应的晶格结构，并且增强从发光层的光提取。晶格结构包括嵌入光吸收介质中的侧壁和/或棒，并将光吸收介质分成多个区域单元。区域单元被侧壁完全隔离或部分地分开。还提供了一种制造包括晶格结构的发光器件的方法，该晶格结构包括嵌入光吸收介质中的侧壁和/或棒，并将光吸收介质分成多个区域单元。

9. 发明授权

US09123833B2 Defect-controlling structure for epitaxial growth, light emitting device containing defect-controlling structure, and method of forming the same 有权
标题翻译：用于外延生长的缺陷控制结构，含有缺陷控制结构的发光器件及其形成方法
公开(公告)号：US09123833B2
公开(公告)日：2015-09-01
申请号：US14231316
申请日：2014-03-31
申请人： Jianping Zhang , Hongmei Wang , Chunhui Yan
发明人： Jianping Zhang , Hongmei Wang , Chunhui Yan
IPC分类号： H01L33/00 , H01L33/06 , H01L21/02 , H01L33/02 , H01L33/12 , B82Y10/00 , B82Y30/00
CPC分类号： H01L33/0075 , B82Y10/00 , B82Y30/00 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02601 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/025 , H01L33/06 , H01L33/12
摘要： A method for reducing dislocations or other defects in a light emitting device, such as light emitting diode (LED), by in-situ introducing nanoparticles into at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A light emitting device is provided, and nanoparticles are dispensed in-situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device.
摘要翻译：通过将纳米颗粒原位引入到缺陷控制层，n型层，p型中的至少一种中，减少诸如发光二极管（LED）的发光器件中的位错或其它缺陷的方法层和发光器件的量子阱。提供了一种发光器件，并且纳米颗粒在发光器件的缺陷控制层，n型层，p型层和量子阱中的至少一个中被原位分配。

10. 发明授权

US08785904B2 Light-emitting device with low forward voltage and method for fabricating the same 有权
标题翻译：具有低正向电压的发光装置及其制造方法
公开(公告)号：US08785904B2
公开(公告)日：2014-07-22
申请号：US13090899
申请日：2011-04-20
申请人： Jianping Zhang , Hongmei Wang , Chunhui Yan
发明人： Jianping Zhang , Hongmei Wang , Chunhui Yan
IPC分类号： H01L29/06
CPC分类号： H01L33/04 , H01L33/14 , H01L33/32 , H01L33/385
摘要： A light emitting device with reduced forward voltage Vf by utilizing the excellent lateral conduction of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) structure and, more specifically, by improving the vertical conduction of 2DEG and 2DHG structure by means of vertical conductive passages formed in 2DEG and 2DHG structure. The conductive passages are formed via discontinuities in 2DEG and 2DHG structure. The discontinuities can be in the form of openings by etching 2DEG or 2DHG structure, or in the form of voids by growing 2DEG or 2DHG structure on a rough surface via epitaxy facet control. The discontinuities can be formed by vertical displacement of 2DEG structure. A method is provided for manufacturing a light emitting device with reduced forward voltage same.
摘要翻译：通过利用二维电子气（2DEG）和二维空穴气体（2DHG）结构优异的横向导通，具有降低的正向电压Vf的发光器件，更具体地，通过改进2DEG和2DHG结构的垂直传导以2DEG和2DHG结构形成的垂直导电通道的装置。导电通道是通过2DEG和2DHG结构的不连续形成的。通过蚀刻2DEG或2DHG结构，或通过在粗糙表面上通过外延小面控制生长2DEG或2DHG结构，以空隙的形式，不连续性可以是开口的形式。可以通过2DEG结构的垂直位移形成不连续性。提供了一种用于制造具有相同的正向电压降低的发光器件的方法。

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