发明申请
US20120205616A1 DEFECT-CONTROLLING STRUCTURE FOR EPITAXIAL GROWTH, LIGHT EMITTING DEVICE CONTAINING DEFECT-CONTROLLING STRUCTURE, AND METHOD OF FORMING THE SAME
有权
基本信息:
- 专利标题： DEFECT-CONTROLLING STRUCTURE FOR EPITAXIAL GROWTH, LIGHT EMITTING DEVICE CONTAINING DEFECT-CONTROLLING STRUCTURE, AND METHOD OF FORMING THE SAME
- 专利标题（中）：外延生长缺陷控制结构，含有缺陷控制结构的发光装置及其形成方法
- 申请号：US13028055 申请日：2011-02-15
- 公开(公告)号：US20120205616A1 公开(公告)日：2012-08-16
- 发明人： Jianping Zhang , Hongmei Wang , Chunhui Yan
- 申请人： Jianping Zhang , Hongmei Wang , Chunhui Yan
- 申请人地址： US CA El Monte
- 专利权人： INVENLUX CORPORATION
- 当前专利权人： INVENLUX CORPORATION
- 当前专利权人地址： US CA El Monte
- 主分类号： H01L33/06
- IPC分类号： H01L33/06 ; B82Y40/00 ; B82Y99/00
摘要：
A method for reducing dislocations or other defects in a light emitting device, such as light emitting diode (LED), by in-situ introducing nanoparticles into at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A light emitting device is provided, and nanoparticles are dispensed in-situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device.
摘要（中）：
通过将纳米颗粒原位引入到缺陷控制层，n型层，p型中的至少一种中，减少诸如发光二极管（LED）的发光器件中的位错或其它缺陷的方法 层和发光器件的量子阱。 提供了一种发光器件，并且纳米颗粒在发光器件的缺陷控制层，n型层，p型层和量子阱中的至少一个中被原位分配。