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1. 发明授权

US5998826A Triple well floating gate memory and operating method with isolated channel program, preprogram and erase processes 失效
标题翻译：三通井浮动存储器和具有隔离通道程序，预编程和擦除过程的操作方法
公开(公告)号：US5998826A
公开(公告)日：1999-12-07
申请号：US817656
申请日：1997-04-04
申请人： Chun-Hsiung Hung , Tzeng-Huei Shiau , Ray-Lin Wan , Fu-Chia Shone
发明人： Chun-Hsiung Hung , Tzeng-Huei Shiau , Ray-Lin Wan , Fu-Chia Shone
IPC分类号： G11C16/16 , H01L29/788 , H01L27/76
CPC分类号： G11C16/16
摘要： A new flash memory cell structure and operational bias is based on the use of a triple well flash memory cell which allows Fowler Nordheim (F-N) tunneling with lower absolute value bias potentials. Thus, the floating gate memory cell is made in a semiconductor substrate having a first conductivity type, such as p-type. A first well within the substrate by having a second conductivity type different than the first conductivity type is included. A second well within the first well is also included having the first conductivity type. A drain and a source are formed in the second well having the second conductivity type, and spaced away from one another to define a channel area between the drain and the source. A floating gate and control gate structure is included over the channel area. The floating gate memory cell is coupled with circuits that induce F-N tunneling of electrons out of the floating gate into the channel area of the substrate for erasing by applying a positive voltage to the second well, such as a voltage higher than the supply voltage, applying a positive voltage to the first well, which is substantially equal to the positive voltage of the second well, applying a negative voltage to the control gate of the cell, while the substrate is grounded. A block wide pre-program operation involves F-N tunneling of electrons into the floating gate from the channel area, using a negative voltage in the second well. Also, circuits are coupled with the cell to induce hot electron injection current of electrons into the floating gate for programming or byte by byte preprogramming.
摘要翻译： PCT No.PCT / US96 / 14349 Sec。 371日期1997年04月4日 102（e）日期1997年4月4日PCT 1996年9月5日PCT公布。公开号WO98 / 10471 日期1998年3月12日新的闪存单元结构和操作偏置基于使用三阱闪存单元，这允许具有较低绝对值偏置电位的Fowler Nordheim（F-N）隧穿。因此，浮置栅极存储单元被制成具有第一导电类型的诸如p型的半导体衬底。包括具有不同于第一导电类型的第二导电类型的衬底内的第一阱。还包括第一阱中的第二阱具有第一导电类型。在具有第二导电类型的第二阱中形成漏极和源极，并且彼此间隔开以限定漏极和源极之间的沟道区域。通道区域中包括浮动栅极和控制栅极结构。浮动栅极存储单元与电路耦合，该电路通过向第二阱施加正电压，例如高于电源电压的电压，施加电压，使电子从浮动栅极进入隧道区域进入衬底的通道区域以进行擦除与第一阱的正电压相比，其基本上等于第二阱的正电压，而在衬底接地时，向电池的控制栅极施加负电压。块宽预编程操作涉及使用第二阱中的负电压将电子从沟道区域F-N隧穿到浮置栅极。此外，电路与电池耦合以将电子的热电子注入电流引入浮动栅极进行编程或逐字节预编程。

2. 发明授权

US5818764A Block-level wordline enablement to reduce negative wordline stress 失效
标题翻译：块级字词启用以减少负面字线压力
公开(公告)号：US5818764A
公开(公告)日：1998-10-06
申请号：US796821
申请日：1997-02-06
申请人： Tom D. Yiu , I-Long Lee , Kuen-Long Chang , Han-Sung Chen , Tzeng-Huei Shiau , Chun-Hsiung Hung , Ray-Lin Wan
发明人： Tom D. Yiu , I-Long Lee , Kuen-Long Chang , Han-Sung Chen , Tzeng-Huei Shiau , Chun-Hsiung Hung , Ray-Lin Wan
IPC分类号： G11C8/08 , G11C16/08 , G11C16/16 , G11C16/00
CPC分类号： G11C8/08 , G11C16/08 , G11C16/16
摘要： A circuit is provided for supplying a negative erasing voltage onto the wordlines of selected blocks in an array of floating gate memory cells. The circuit includes a voltage circuit, which has a plurality of local outputs, each of which connects to wordlines of an associated block of floating gate memory cells. A block selector circuit is coupled to the local outputs of the voltage circuit and selectively switches each of the local outputs to apply either an erasing voltage or a non-erasing voltage onto the wordlines of the associated block of floating gate memory cells. Negative wordline stress is thus reduced for wordlines of unselected blocks which receive a less negative, non-erasing voltage during block erase operations.
摘要翻译：提供电路，用于向浮动栅极存储单元阵列中的选定块的字线提供负的擦除电压。该电路包括具有多个本地输出的电压电路，每个本地输出连接到浮动栅极存储器单元的相关块的字线。块选择器电路耦合到电压电路的本地输出，并且选择性地切换每个本地输出以将擦除电压或非擦除电压施加到浮动栅极存储器单元的相关联块的字线上。因此，对于在块擦除操作期间接收到较小负的非擦除电压的未选择块的字线，负字线应力减小。

3. 发明授权

US5963476A Fowler-Nordheim (F-N) tunneling for pre-programming in a floating gate memory device 失效
标题翻译： Fowler-Nordheim（F-N）隧道，用于在浮动栅极存储器件中进行预编程
公开(公告)号：US5963476A
公开(公告)日：1999-10-05
申请号：US975516
申请日：1997-11-12
申请人： Chun Hsiung Hung , Tzeng-Huei Shiau , Yao-Wu Cheng , I-Long Lee , Fuchia Shone , Ray-Lin Wan
发明人： Chun Hsiung Hung , Tzeng-Huei Shiau , Yao-Wu Cheng , I-Long Lee , Fuchia Shone , Ray-Lin Wan
IPC分类号： G11C16/02 , G11C16/04 , G11C16/16 , G11C16/34 , H01L27/115 , G11C16/06
CPC分类号： G11C16/107 , G11C16/0416 , G11C16/16 , G11C16/3454 , G11C16/3459 , H01L27/115
摘要： A new flash memory cell structure and operational bias is based on the use of a triple well flash memory cell which allows pre-programming by Fowler Nordheim (F-N) tunneling over blocks of cells at a time. The floating gate memory cell is made in a semiconductor substrate having a first conductivity type, such as p-type. A first well within the substrate by having a second conductivity type different than the first conductivity type is included. A second well within the first well is also included having the first conductivity type. A drain and a source are formed in the second well having the second conductivity type, and spaced away from one another to define a channel area between the drain and the source. A floating gate and control gate structure is included over the channel area. The floating gate memory cell is coupled with circuits that induce F-N tunneling of electrons out of the floating gate into the channel area of the substrate for erasing by applying a positive voltage to the second well, such as a voltage higher than the supply voltage, applying a positive voltage to the first well, which is substantially equal to the positive voltage of the second well, applying a negative voltage to the control gate of the cell, while the substrate is grounded. A block wide pre-program operation involves F-N tunneling of electrons into the floating gate from the channel area, using a negative voltage in the second well.
摘要翻译：新的闪存单元结构和操作偏置是基于使用三阱闪存单元，其允许Fowler Nordheim（F-N）一次在单元格块上进行预编程。浮栅存储单元由具有第一导电类型的半导体衬底制成，例如p型。包括具有不同于第一导电类型的第二导电类型的衬底内的第一阱。还包括第一阱中的第二阱具有第一导电类型。在具有第二导电类型的第二阱中形成漏极和源极，并且彼此间隔开以限定漏极和源极之间的沟道区域。通道区域中包括浮动栅极和控制栅极结构。浮动栅极存储单元与电路耦合，该电路通过向第二阱施加正电压，例如高于电源电压的电压，施加电压，使电子从浮动栅极进入隧道区域进入衬底的通道区域以进行擦除与第一阱的正电压相比，其基本上等于第二阱的正电压，而在衬底接地时，向电池的控制栅极施加负电压。块宽的预编程操作涉及使用第二阱中的负电压将电子从沟道区域F-N隧穿到浮置栅极。

4. 发明授权

US5699298A Flash memory erase with controlled band-to-band tunneling current 失效
标题翻译：具有受控的带对隧道电流的闪存擦除
公开(公告)号：US5699298A
公开(公告)日：1997-12-16
申请号：US718525
申请日：1996-10-07
申请人： Tzeng-Huei Shiau , Ray-Lin Wan , Yuan-Chang Liu , Chun-Hsiung Hung , Weitong Chuang , Han Sung Chen , Fuchia Shone
发明人： Tzeng-Huei Shiau , Ray-Lin Wan , Yuan-Chang Liu , Chun-Hsiung Hung , Weitong Chuang , Han Sung Chen , Fuchia Shone
IPC分类号： G11C16/16 , G11C16/30 , G11C16/00
CPC分类号： G11C16/3445 , G11C16/16 , G11C16/30
摘要： Substantial reduction in peak current encountered during an erase process for a flash memory device is achieved by selection of source voltage potential during the erase according to the expected band-to-band tunneling current encountered during the process. During the beginning of the process, a lower source voltage potential is selected, which is high enough to cause significant erasing while suppressing band-to-band tunneling current in a portion of the array, and during a second part of the erasing process, a higher source potential is utilized, which ensures successful erasing of the array, without exceeding the peak current requirements of the power supply used with the device. The first and second parts of the erase sequence will induce band-to-band tunneling current in addition to Fowler-Nordheim tunneling current. The band-to-band tunneling current is characterized by a turn on threshold source potential which is inversely related to the threshold of the cell receiving the voltage sequence. The source voltage used in the first part of the erase sequence is set at level that is near or above the turn on threshold source potential for higher threshold cells that are in the high threshold state, but less than the turn on threshold source potential for lower threshold cells in the high threshold state. The source potential in the second part is set at level which is near or above the turn on threshold source potential for lower threshold cells in the high threshold state.
摘要翻译： PCT No.PCT / US96 / 07490 Sec。 371日期1996年10月7日第 102（e）1996年10月7日PCT 1996年5月22日提交闪速存储器件的擦除过程中遇到的峰值电流的实质性降低是通过根据预期的带 - 带来在擦除期间选择源极电压电位来实现的过程中遇到的隧道电流。在该过程开始时，选择较低的源极电压电位，其足够高以引起显着擦除，同时抑制阵列的一部分中的带间隧穿电流，并且在擦除处理的第二部分期间，利用更高的源极电位，确保阵列的成功擦除，而不超过与器件一起使用的电源的峰值电流要求。擦除序列的第一部分和第二部分除了Fowler-Nordheim隧道电流之外还将引起带间隧穿电流。带 - 带隧穿电流的特征在于开启阈值源极电位，其与接收电压序列的电池的阈值成反比。在擦除序列的第一部分中使用的源电压被设置为接近或高于处于高阈值状态的较高阈值电池的阈值源极电位的接通或高于电平，但小于阈值源电位的导通电平较低阈值细胞处于高阈值状态。第二部分中的源极电位被设置在接近或高于阈值电位的阈值源电位的接通或高于在高阈值状态下的较低阈值电池的电位。

5. 发明授权

US6087190A Automatic test process with non-volatile result table store 失效
标题翻译：自动测试过程与非易失性结果表存储
公开(公告)号：US6087190A
公开(公告)日：2000-07-11
申请号：US973582
申请日：1997-11-17
申请人： Ray-Lin Wan , Chun-Hsiung Hung , Tzeng-Huei Shiau
发明人： Ray-Lin Wan , Chun-Hsiung Hung , Tzeng-Huei Shiau
IPC分类号： G11C29/24 , G11C29/44 , H10L21/00 , G01R31/26 , H10L21/66
CPC分类号： G11C29/24 , G11C29/44
摘要： A method of manufacturing integrated circuits based on providing a test column of memory cells in the devices. Cells in the test column are selected by a portion of the addresses which identifies a row in the main array on the device. A test is executed to determine a characteristic of the device, and the results of that test are mapped to the portion of the address which identifies a row in the array. This produces a characteristic code address for the device which indicates the results of the test. Access to the test column on the device is enabled, and a bit is written in response to the characteristic code address in a memory cell on the test column. During manufacture the test column is read in order to classify the device according to the characteristic. This allows for storing in a table look-up format, significant amounts of data about the characteristics of the device without requiring large amounts of memory on the device, and substantially relieving the testing system of a requirement for memory resources.
摘要翻译： PCT No.PCT / US97 / 18204 Sec。 371日期：1997年11月17日 102（e）日期1997年11月17日PCT 1997年10月8日PCT公布。公开号WO99 / 18531 日期1999年04月15日基于在器件中提供存储器单元的测试列的制造集成电路的方法。测试列中的单元格由标识设备主阵列中的行的地址的一部分来选择。执行测试以确定设备的特性，并将该测试的结果映射到标识阵列中的一行的地址部分。这产生了指示测试结果的设备的特征代码地址。启用对设备的测试列的访问，并响应于测试列上的存储单元中的特征代码地址写入一个位。在制造期间，读取测试柱以便根据特性对装置进行分类。这允许以表查找格式存储关于设备的特性的大量数据，而不需要设备上的大量存储器，并且基本上减轻了测试系统对存储器资源的需求。

6. 发明授权

US5787039A Low current floating gate programming with bit-by-bit verification 失效
标题翻译：低电流浮栅编程与逐位验证
公开(公告)号：US5787039A
公开(公告)日：1998-07-28
申请号：US812615
申请日：1997-03-06
申请人： Han-Sung Chen , Tzeng-Huei Shiau , Yu-Shen Lin , Chung-Cheng Tsai , Jin-Lien Lin , Ray Lin Wan , Yuan-Chang Liu , Chun Hsiung Hung
发明人： Han-Sung Chen , Tzeng-Huei Shiau , Yu-Shen Lin , Chung-Cheng Tsai , Jin-Lien Lin , Ray Lin Wan , Yuan-Chang Liu , Chun Hsiung Hung
IPC分类号： G11C16/10 , G11C16/34 , G11C16/06
CPC分类号： G11C16/3486 , G11C16/10 , G11C16/3459 , G11C16/3468
摘要： A system for programming arrays of floating gate memory cells reduces programming current requirements, and reduces wordline and bitline stress during programming. A word-to-be-programmed into a floating gate memory array is divided into a plurality of smaller subwords. Only one subword is programmed at a time, thereby reducing programming current requirements. Additionally, subwords which are successfully programmed are not reprogrammed even if bits in other subwords do not program properly. This creates less wordline stress than previous systems which program an entire word at once, thereby requiring subwords which program successfully to be reprogrammed along with subwords which fail to program. Finally, within each subword only those bits which failed to program are reprogrammed, thereby reducing bitline stress during reprogramming for those bits which were successfully programmed.
摘要翻译：用于编程浮动栅极存储器单元阵列的系统减少了编程电流要求，并且减少了编程期间的字线和位线应力。要被编程到浮动存储器阵列中的字被分成多个较小的子字。一次只编写一个子字，从而减少编程电流的要求。此外，即使其他子词的位未正确编程，成功编程的子词也不会被重新编程。这与以前系统一样编制整个单词的系统产生较少的字面压力，从而要求程序成功地重新编程的子词以及不能编程的子词。最后，在每个子字中，只有那些无法编程的位被重新编程，从而在对已成功编程的那些位的重新编程期间减少位线应力。

7. 发明申请

US20130285737A1 Charge Pump System 有权
标题翻译：电荷泵系统
公开(公告)号：US20130285737A1
公开(公告)日：2013-10-31
申请号：US13460112
申请日：2012-04-30
申请人： Yung Feng Lin , Chun-Jen Huang , Tzeng-Huei Shiau , Chun-Hsiung Hung , Caiyun Wu , Qifang Wang
发明人： Yung Feng Lin , Chun-Jen Huang , Tzeng-Huei Shiau , Chun-Hsiung Hung , Caiyun Wu , Qifang Wang
IPC分类号： G05F3/02
CPC分类号： H02M3/07
摘要： In one aspect, a first charge pump has serially arranged charge pump stages. Inter-stage nodes between adjacent stages are pumped by a second charge pump. In another aspect, timing of the charge pump stages is controlled by at a command clock signal. The command clock signal and command data are communicated between a integrated circuit with the charge pump and an external circuit.
摘要翻译：在一个方面，第一电荷泵具有串联布置的电荷泵级。相邻级之间的阶段节点由第二电荷泵泵送。在另一方面，电荷泵级的定时由命令时钟信号控制。命令时钟信号和命令数据在与电荷泵的集成电路和外部电路之间传送。

8. 发明授权

US09214859B2 Charge pump system 有权
标题翻译：电荷泵系统
公开(公告)号：US09214859B2
公开(公告)日：2015-12-15
申请号：US13460112
申请日：2012-04-30
申请人： Yung Feng Lin , Chun-Jen Huang , Tzeng-Huei Shiau , Chun-Hsiung Hung , Caiyun Wu , Qifang Wang
发明人： Yung Feng Lin , Chun-Jen Huang , Tzeng-Huei Shiau , Chun-Hsiung Hung , Caiyun Wu , Qifang Wang
IPC分类号： H02M3/07
CPC分类号： H02M3/07
摘要： In one aspect, a first charge pump has serially arranged charge pump stages. Inter-stage nodes between adjacent stages are pumped by a second charge pump. In another aspect, timing of the charge pump stages is controlled by at a command clock signal. The command clock signal and command data are communicated between a integrated circuit with the charge pump and an external circuit.
摘要翻译：在一个方面，第一电荷泵具有串联布置的电荷泵级。相邻级之间的阶段节点由第二电荷泵泵送。在另一方面，电荷泵级的定时由命令时钟信号控制。命令时钟信号和命令数据在与电荷泵的集成电路和外部电路之间传送。

9. 发明授权

US06496417B1 Method and integrated circuit for bit line soft programming (BLISP) 有权
标题翻译：位线软编程方法与集成电路（BLISP）
公开(公告)号：US06496417B1
公开(公告)日：2002-12-17
申请号：US09601089
申请日：2000-07-27
申请人： Tzeng-Huei Shiau , Ray-Lin Wan , Han Sung Chen , Yu-Shen Lin , Wen-Pin Lu , Tso-Ming Chang
发明人： Tzeng-Huei Shiau , Ray-Lin Wan , Han Sung Chen , Yu-Shen Lin , Wen-Pin Lu , Tso-Ming Chang
IPC分类号： G11C1604
CPC分类号： G11C16/107 , G11C16/3404 , G11C16/3409 , G11C16/3413 , G11C16/3445
摘要： A method and an integrated circuit for performing a soft program after erase provides efficient convergence of over-erased floating gate memory cells disposed in bit lines. The soft program is applied to successive subject bit lines. The BLISP method includes selection of a selected bit line and applying the soft program to a subject bit line corresponding to the selected bit line. For integrated circuits having no defective bit lines, the subject bit lines comprise the selected bit lines. The BLISP method is adapted for low current consumption compared to bulk soft programming methods. In some embodiments, the integrated circuit includes defective bit lines. For these integrated circuits, the selection of the selected bit line includes indicating a bit line type corresponding to the selected bit line. The defective bit lines are logically replaced by redundant bit lines so that the soft program is applied to conforming selected bit lines and redundant bit lines corresponding to defective bit lines. The defective bit lines in the first memory array can be disabled during the soft program and replaced by corresponding redundant bit lines disposed in the second memory array, so that the soft program is not applied to the defective bit lines. By preventing application of the soft program to the defective bit lines, the BLISP method avoids consumption of excessive current that would otherwise be consumed by very low threshold voltage memory cells disposed on the defective bit lines. The excessive current would render the soft program method much less efficient.
摘要翻译：用于在擦除之后执行软程序的方法和集成电路提供了布置在位线中的过擦除的浮动栅极存储单元的有效收敛。软程序应用于连续的主题位线。 BLISP方法包括选择所选位线并将软程序应用于对应于所选位线的对象位线。对于没有有缺陷的位线的集成电路，主题位线包括所选择的位线。与批量软编程方法相比，BLISP方法适用于低电流消耗。在一些实施例中，集成电路包括有缺陷的位线。对于这些集成电路，选择的位线的选择包括指示对应于所选位线的位线类型。有缺陷的位线在逻辑上被冗余位线替代，使得软程序被应用于对应于有缺陷位线的选定位线和冗余位线。可以在软程序期间禁用第一存储器阵列中的有缺陷的位线，并且由位于第二存储器阵列中的对应的冗余位线替换第一存储器阵列中的有缺陷的位线，使得软程序不被施加到有缺陷的位线。通过防止将软程序应用于有缺陷的位线，BLISP方法避免消耗过剩的电流，否则会由设置在有缺陷位线上的非常低的阈值电压存储单元消耗。过度的电流将使软程序方法效率低得多。

10. 发明授权

US06229732B1 Regulated voltage supply circuit for inducing tunneling current in floating gate memory devices 有权
标题翻译：用于在浮动栅极存储器件中感应隧道电流的稳压电源电路
公开(公告)号：US06229732B1
公开(公告)日：2001-05-08
申请号：US09380873
申请日：1999-09-09
申请人： Yu-Shen Lin , Tzeng-Huei Shiau , Ray-Lin Wan
发明人： Yu-Shen Lin , Tzeng-Huei Shiau , Ray-Lin Wan
IPC分类号： G11C1604
CPC分类号： G11C5/147 , G11C16/12 , G11C16/30
摘要： A circuit is provided for applying a negative voltage to the control gate of a floating gate memory cell and a positive voltage to the source drain or channel which comprises a positive voltage source to provide a positive voltage to the source of the cell, and a negative voltage source responsive to the supply voltage to provide a negative voltage to the control gate. A voltage regulator is included that is coupled to the negative voltage source and to the positive voltage source to maintain the negative voltage at a level responsive to the source voltage. The regulator maintains the negative voltage in response to the source voltage so that the electric field remains essentially constant over a range of values of source voltage.
摘要翻译：提供电路用于向浮动栅极存储单元的控制栅极施加负电压，并向源极漏极或沟道施加正电压，该正电压包括正电压源以向电池源提供正电压，负电压电压源响应于电源电压以向控制栅极提供负电压。包括耦合到负电压源和正电压源的电压调节器，以将负电压保持在响应于电源电压的电平。调节器响应于源极电压维持负电压，使得电源在源极电压值的范围内基本保持恒定。

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