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    • 2. 发明授权
    • Method and apparatus using integrated metrology data for pre-process and post-process control
    • 使用集成度量数据进行预处理和后处理控制的方法和装置
    • US06788988B1
    • 2004-09-07
    • US10023098
    • 2001-12-17
    • Alexander J. PasadynChristopher A. Bode
    • Alexander J. PasadynChristopher A. Bode
    • G06F1900
    • G05B15/02H01L22/20H01L2223/54453
    • A method and an apparatus for acquiring pre-process and post-process integrated metrology data. A lot of semiconductor wafers is provided. A pre-process integrated metrology data acquisition from a first semiconductor wafer within the lot of semiconductor wafers is performed. A process operation on the first semiconductor wafer is performed at least partially during the process of acquiring pre-process metrology data from a second semiconductor wafer within the lot of semiconductor wafers. Post-process integrated metrology data is acquired from the first semiconductor wafer in response to processing of the first semiconductor wafer. The pre-process and the post-process metrology data is analyzed for evaluation of the process operation performed on the first semiconductor wafer.
    • 一种用于获取预处理和后处理综合度量数据的方法和装置。 提供了许多半导体晶片。 执行在许多半导体晶片内的第一半导体晶片的预处理集成度量数据采集。 在从多个半导体晶片的第二半导体晶片获取预处理测量数据的过程中,至少部分地执行在第一半导体晶片上的处理操作。 响应于第一半导体晶片的处理,从第一半导体晶片获取后处理集成度量数据。 分析预处理和后处理计量数据以评估在第一半导体晶片上执行的处理操作。
    • 3. 发明授权
    • Identifying a cause of a fault based on a process controller output
    • 根据过程控制器输出识别出故障的原因
    • US06778873B1
    • 2004-08-17
    • US10210640
    • 2002-07-31
    • Jin WangElfido Coss, Jr.Brian K. CussonAlexander J. PasadynMichael L. MillerNaomi M. JenkinsChristopher A. Bode
    • Jin WangElfido Coss, Jr.Brian K. CussonAlexander J. PasadynMichael L. MillerNaomi M. JenkinsChristopher A. Bode
    • G06F1900
    • G05B19/4184G05B23/0281G05B2219/31357G05B2219/31363G05B2219/32201Y02P90/14Y02P90/22
    • A method and apparatus is provided for identifying a cause of a fault based on controller output. The method comprises processing at least one workpiece under a direction of the controller and detecting a fault associated with the processing of the at least one workpiece. The method further includes determining a plurality of possible causes of the detected fault, identifying a more likely possible cause out of the plurality of possible causes, providing fault information associated with the identified more likely possible cause to the controller. The method further includes providing fault information associated with the identified more likely possible cause to the controller. The method further comprises adjusting the processing of one or more workpieces to be processed next based on the fault information provided to the controller. The method further includes generating prediction data associated with processing of the next workpieces, and comparing the prediction data to processing data associated with the processing of the next workpieces to identify a possible cause of the fault.
    • 提供了一种基于控制器输出来识别故障原因的方法和装置。 该方法包括在控制器的方向上处理至少一个工件,并检测与至少一个工件的处理相关的故障。 该方法还包括确定检测到的故障的多个可能的原因,从多个可能的原因中识别更可能的可能原因,将与所识别的更可能的可能原因相关联的故障信息提供给控制器。 该方法还包括向控制器提供与所识别的更可能的可能原因相关联的故障信息。 该方法还包括基于提供给控制器的故障信息来调整接下来要处理的一个或多个待处理工件的处理。 该方法还包括生成与下一个工件的处理相关联的预测数据,以及将预测数据与与下一个工件的处理相关联的处理数据进行比较,以识别故障的可能原因。
    • 6. 发明授权
    • Method of varying stepper exposure dose to compensate for across-wafer variations in photoresist thickness
    • 改变步进曝光剂量以补偿光致抗蚀剂厚度的跨晶片变化的方法
    • US06576385B2
    • 2003-06-10
    • US09776206
    • 2001-02-02
    • Christopher A. BodeJoyce S. Oey HewettAlexander J. Pasadyn
    • Christopher A. BodeJoyce S. Oey HewettAlexander J. Pasadyn
    • G03F900
    • G03F7/70558
    • A method of compensating for across-wafer variations in photoresist thickness is provided. The method comprises providing a wafer having a process layer formed there-above, forming a layer of photoresist above the process layer, measuring a thickness of the layer of photoresist at a plurality of locations to result in a plurality of thickness measurements, providing the thickness measurements to a controller that determines, based upon the thickness measurements, an exposure dose of an exposure process to be performed on the layer of photoresist, and performing the exposure process on the layer of photoresist using the determined exposure dose. This exposure dose may be varied on a flash-by-flash basis as the stepper tool “steps” across the surface of wafers. That is, the exposure dose for a group of flashes, or for each flash, may be varied in response to the thickness measurements.
    • 提供了补偿光致抗蚀剂厚度的跨晶片变化的方法。 该方法包括提供具有在其上形成的处理层的晶片,在处理层上方形成光致抗蚀剂层,测量多个位置处的光致抗蚀剂层的厚度,以产生多个厚度测量值,从而提供厚度 控制器的测量,其基于厚度测量确定将在光致抗蚀剂层上进行的曝光处理的曝光剂量,以及使用确定的曝光剂量对光致抗蚀剂层进行曝光处理。 当步进工具跨越晶片表面“步进”时,该曝光剂量可以在逐闪的基础上变化。 也就是说,一组闪光或每个闪光灯的曝光剂量可以响应于厚度测量而变化。