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1. 发明申请

US20080316386A1 Thin Film Transistor, Thin Film Transistor Substrate, and Methods for Manufacturing the Same 有权
标题翻译：薄膜晶体管，薄膜晶体管基板及其制造方法
公开(公告)号：US20080316386A1
公开(公告)日：2008-12-25
申请号：US12197416
申请日：2008-08-25
申请人： Chin-Lung Ting , Cheng-Chi Wang
发明人： Chin-Lung Ting , Cheng-Chi Wang
IPC分类号： G02F1/136
CPC分类号： H01L29/78696 , H01L29/66757 , H01L29/78606 , H01L29/78675
摘要： A thin film transistor includes a channel layer of a specific shape, a thermal gradient inducer body, a gate insulating film, a gate electrode and an interlayer insulating film, a source electrode and a drain electrode. The channel layer is formed on a substrate. The channel layer has a nucleation region and a crystal end. The thermal gradient inducer body partially circumscribes the channel layer. The gate insulating film is formed on the substrate, and the channel layer is at least partially covered with the gate insulating film. The gate electrode is formed on the gate insulating film. The interlayer insulating film is formed on the gate insulating film, and the gate electrode is at least partially covered with the interlayer insulating film. The source electrode and the drain electrode are formed on the interlayer insulating film, passed through the gate insulating film and the interlayer insulating film, and electrically connected to the channel layer.
摘要翻译：薄膜晶体管包括特定形状的沟道层，热梯度诱导体，栅极绝缘膜，栅电极和层间绝缘膜，源电极和漏电极。沟道层形成在基板上。沟道层具有成核区域和晶体端部。热梯度诱导体主体部分地界定通道层。栅极绝缘膜形成在基板上，沟道层至少部分地被栅极绝缘膜覆盖。栅电极形成在栅极绝缘膜上。层间绝缘膜形成在栅极绝缘膜上，并且栅电极至少部分被层间绝缘膜覆盖。源电极和漏极形成在层间绝缘膜上，通过栅极绝缘膜和层间绝缘膜，并与沟道层电连接。

2. 发明授权

US08139175B2 Thin film transistor, thin film transistor substrate, and methods for manufacturing the same 有权
标题翻译：薄膜晶体管，薄膜晶体管基板及其制造方法
公开(公告)号：US08139175B2
公开(公告)日：2012-03-20
申请号：US12197416
申请日：2008-08-25
申请人： Chin-Lung Ting , Cheng-Chi Wang
发明人： Chin-Lung Ting , Cheng-Chi Wang
IPC分类号： G02F1/136
CPC分类号： H01L29/78696 , H01L29/66757 , H01L29/78606 , H01L29/78675
摘要： A thin film transistor includes a channel layer of a specific shape, a thermal gradient inducer body, a gate insulating film, a gate electrode and an interlayer insulating film, a source electrode and a drain electrode. The channel layer is formed on a substrate. The channel layer has a nucleation region and a crystal end. The thermal gradient inducer body partially circumscribes the channel layer. The gate insulating film is formed on the substrate, and the channel layer is at least partially covered with the gate insulating film. The gate electrode is formed on the gate insulating film. The interlayer insulating film is formed on the gate insulating film, and the gate electrode is at least partially covered with the interlayer insulating film. The source electrode and the drain electrode are formed on the interlayer insulating film, passed through the gate insulating film and the interlayer insulating film, and electrically connected to the channel layer.
摘要翻译：薄膜晶体管包括特定形状的沟道层，热梯度诱导体，栅极绝缘膜，栅电极和层间绝缘膜，源电极和漏电极。沟道层形成在基板上。沟道层具有成核区域和晶体端部。热梯度诱导体主体部分地界定通道层。栅极绝缘膜形成在基板上，沟道层至少部分地被栅极绝缘膜覆盖。栅电极形成在栅极绝缘膜上。层间绝缘膜形成在栅极绝缘膜上，并且栅电极至少部分被层间绝缘膜覆盖。源电极和漏极形成在层间绝缘膜上，通过栅极绝缘膜和层间绝缘膜，并与沟道层电连接。

3. 发明授权

US07432140B2 Thin film transistor, thin film transistor substrate, and methods for manufacturing the same 失效
标题翻译：薄膜晶体管，薄膜晶体管基板及其制造方法
公开(公告)号：US07432140B2
公开(公告)日：2008-10-07
申请号：US11623214
申请日：2007-01-15
申请人： Chin-Lung Ting , Cheng-Chi Wang
发明人： Chin-Lung Ting , Cheng-Chi Wang
IPC分类号： H01L21/00
CPC分类号： H01L29/78696 , H01L29/66757 , H01L29/78606 , H01L29/78675
摘要： A thin film transistor includes a channel layer of a specific shape, a thermal gradient inducer body, a gate insulating film, a gate electrode and an interlayer insulating film, a source electrode and a drain electrode. The channel layer is formed on a substrate. The channel layer has a nucleation region and a crystal end. The thermal gradient inducer body partially circumscribes the channel layer. The gate insulating film is formed on the substrate, and the channel layer is at least partially covered with the gate insulating film. The gate electrode is formed on the gate insulating film. The interlayer insulating film is formed on the gate insulating film, and the gate electrode is at least partially covered with the interlayer insulating film. The source electrode and the drain electrode are formed on the interlayer insulating film, passed through the gate insulating film and the interlayer insulating film, and electrically connected to the channel layer.
摘要翻译：薄膜晶体管包括特定形状的沟道层，热梯度诱导体，栅极绝缘膜，栅电极和层间绝缘膜，源电极和漏电极。沟道层形成在基板上。沟道层具有成核区域和晶体端部。热梯度诱导体主体部分地界定通道层。栅极绝缘膜形成在基板上，沟道层至少部分地被栅极绝缘膜覆盖。栅电极形成在栅极绝缘膜上。层间绝缘膜形成在栅极绝缘膜上，并且栅电极至少部分被层间绝缘膜覆盖。源电极和漏极形成在层间绝缘膜上，通过栅极绝缘膜和层间绝缘膜，并与沟道层电连接。

4. 发明授权

US06998640B2 Thin film transistor structure 有权
标题翻译：薄膜晶体管结构
公开(公告)号：US06998640B2
公开(公告)日：2006-02-14
申请号：US10659117
申请日：2003-09-10
申请人： Cheng-Chi Wang , Chin-Lung Ting
发明人： Cheng-Chi Wang , Chin-Lung Ting
IPC分类号： H01L29/04
CPC分类号： H01L29/66765
摘要： The invention provides a method of manufacturing a thin film transistor capable of reducing the induced photo-electric current and thus improving the quality of the liquid crystal display, and reducing the number of required photo masks saving on the cost of fabrication. A stack structure is formed first, by successively depositing a gate electrode, a first insulation layer, a semiconductor layer, an ohmic contact layer, and a photoresist layer. Subsequently, a second insulation layer is deposited on the substrate, and the photoresist layer and the second insulation layer on the photoresist layer are removed in a lift-off process. Last, a source electrode, a drain electrode, a passivation layer, and a transparent electrode layer, are formed to complete the thin film transistor process.
摘要翻译：本发明提供了一种能够减少感应光电流并因此提高液晶显示器质量的薄膜晶体管的制造方法，并且减少了所需的照相掩模的数量，从而节省了制造成本。首先通过依次沉积栅电极，第一绝缘层，半导体层，欧姆接触层和光致抗蚀剂层来形成堆叠结构。随后，在衬底上沉积第二绝缘层，并且在剥离过程中去除光致抗蚀剂层上的光致抗蚀剂层和第二绝缘层。最后，形成源电极，漏电极，钝化层和透明电极层，以完成薄膜晶体管工艺。

5. 发明申请

US20090317837A1 CANCER DIAGNOSIS BASED ON LEVELS OF ANTIBODIES AGAINST GLOBO H AND ITS FRAGMENTS 有权
标题翻译：基于针对GLOBO H及其片段的抗体水平的癌症诊断
公开(公告)号：US20090317837A1
公开(公告)日：2009-12-24
申请号：US12485516
申请日：2009-06-16
申请人： Chi-Huey Wong , Chung-Yi Wu , Cheng-Chi Wang
发明人： Chi-Huey Wong , Chung-Yi Wu , Cheng-Chi Wang
IPC分类号： G01N33/574
CPC分类号： G01N33/57488 , G01N33/57415
摘要： A cancer diagnostic method using a glycan array that contains Gb5 and Globo H, Bb2, Bb3, and/or Bb4.
摘要翻译：使用含有Gb5和Globo H，Bb2，Bb3和/或Bb4的聚糖阵列的癌症诊断方法。

6. 发明授权

US07238556B2 Thin film transistor structure and method of manufacturing the same 有权
标题翻译：薄膜晶体管结构及其制造方法
公开(公告)号：US07238556B2
公开(公告)日：2007-07-03
申请号：US10980954
申请日：2004-11-04
申请人： Cheng-Chi Wang
发明人： Cheng-Chi Wang
IPC分类号： H01L21/84
CPC分类号： H01L29/66765 , H01L29/78669
摘要： The present invention improves the quality of the TFT structure by avoiding photo-induced current, and lowers manufacturing costs by decreasing the number of masks required in the process, wherein the former is achieved by the stacked structure including a gate layer, an insulation layer, an amorphous silicon layer and an ohmic contact layer, and the latter is achieved by using the stacked structure as a mask and by exposing the substrate from the back surface.
摘要翻译：本发明通过避免光感应电流来改善TFT结构的质量，并且通过减少该工艺中所需的掩模数目来降低制造成本，其中前者通过包括栅极层，绝缘层，非晶硅层和欧姆接触层，后者通过使用层叠结构作为掩模并通过使基板从背面曝光来实现。

7. 发明授权

US07851141B2 Flat panel display manufacturing 有权
标题翻译：平板显示器制造
公开(公告)号：US07851141B2
公开(公告)日：2010-12-14
申请号：US11681325
申请日：2007-03-02
申请人： Cheng-Chi Wang
发明人： Cheng-Chi Wang
IPC分类号： G03F7/20
CPC分类号： G03F7/2024 , G03F7/70458 , G03F7/70466 , G03F7/70791 , G03F9/7084
摘要： A method includes exposing a photo-resist layer using a first exposure machine that has a first resolution to cause the photo-resist layer to have an exposed portion and an un-exposed portion. The photo-resist layer is exposed using a second exposure machine that has a second resolution to further expose the un-exposed portion of the photo-resist layer, the first resolution being different from the second resolution.
摘要翻译：一种方法包括使用具有第一分辨率以使光致抗蚀剂层具有暴露部分和未曝光部分的第一曝光机曝光光刻胶层。使用具有第二分辨率的第二曝光机曝光光致抗蚀剂层，以进一步暴露光致抗蚀剂层的未曝光部分，第一分辨率不同于第二分辨率。

8. 发明授权

US07015508B2 Thin film transistor structure 有权
标题翻译：薄膜晶体管结构
公开(公告)号：US07015508B2
公开(公告)日：2006-03-21
申请号：US10662909
申请日：2003-09-15
申请人： Cheng-Chi Wang
发明人： Cheng-Chi Wang
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L29/66765 , H01L29/78669
摘要： The present invention improves the quality of the TFT structure by avoiding photo-induced current, and lowers manufacturing costs by decreasing the number of masks required in the process, wherein the former is achieved by the stacked structure including a gate layer, an insulation layer, an amorphous silicon layer and an ohmic contact layer, and the latter is achieved by using the stacked structure as a mask and by exposing the substrate from the back surface.
摘要翻译：本发明通过避免光感应电流来改善TFT结构的质量，并且通过减少该工艺中所需的掩模数目来降低制造成本，其中前者通过包括栅极层，绝缘层，非晶硅层和欧姆接触层，后者通过使用层叠结构作为掩模并通过使基板从背面曝光来实现。

9. 发明授权

US08741311B2 Methods and compositions for immunization against virus 有权
标题翻译：针对病毒免疫的方法和组合物
公开(公告)号：US08741311B2
公开(公告)日：2014-06-03
申请号：US12748265
申请日：2010-03-26
申请人： Chi-Huey Wong , Che Ma , Cheng-Chi Wang , Juine-Ruey Chen
发明人： Chi-Huey Wong , Che Ma , Cheng-Chi Wang , Juine-Ruey Chen
IPC分类号： A61K39/145
CPC分类号： A61K39/145 , A61K39/12 , A61K2039/55505 , C07K16/1018 , C07K2317/76 , C12N7/00 , C12N2740/11034 , C12N2740/16034 , C12N2760/16122 , C12N2760/16134 , C12N2760/16171 , C12N2770/24134 , Y02A50/386
摘要： Immunogenic compositions comprising partially glycosylated viral glycoproteins for use as vaccines against viruses are provided. Vaccines formulated using mono-, di-, or tri-glycosylated viral surface glycoproteins and polypeptides provide potent and broad protection against viruses, even across strains. Pharmaceutical compositions comprising monoglycosylated hemagglutinin polypeptides and vaccines generated therefrom and methods of their use for prophylaxis or treatment of viral infections are disclosed. Methods and compositions are disclosed for influenza virus HA, NA and M2, RSV proteins F, G and SH, Dengue virus glycoproteins M or E, hepatitis C virus glycoprotein E1 or E2 and HIV glycoproteins gp120 and gp41.
摘要翻译：提供了包含部分糖基化的病毒糖蛋白的免疫原性组合物，其用作抗病毒疫苗。使用单糖，二糖或三糖基化的病毒表面糖蛋白和多肽配制的疫苗甚至可以跨毒株提供有效和广泛的防病毒保护。公开了包含单糖基化血凝素多肽和由其产生的疫苗的药物组合物及其用于预防或治疗病毒感染的方法。公开了用于流感病毒HA，NA和M2，RSV蛋白F，G和SH，登革病毒糖蛋白M或E，丙型肝炎病毒糖蛋白E1或E2和HIV糖蛋白gp120和gp41的方法和组合物。

10. 发明申请

US20090225032A1 Overload regulating structure for trackball device 审中-公开
标题翻译：轨迹球装置过载调节结构
公开(公告)号：US20090225032A1
公开(公告)日：2009-09-10
申请号：US12073509
申请日：2008-03-06
申请人： Cheng-Chi Wang
发明人： Cheng-Chi Wang
IPC分类号： G06F3/033
CPC分类号： G06F3/03549
摘要： An overload regulating structure for trackball device includes a base, a top cover, a ball, a circuit board, a plurality of rotatable shafts and disks, and an overload regulator. The ball is three-point supported in the base between the rotatable shafts and the overload regulator. When the ball is subject to an overload, springs in the overload regulator are compressed, allowing the ball to sink into a locating recess in the base and be restricted from rotating freely and thereby protected against the overload. When the ball is released from the overload, the springs in the overload regulator elastically push the ball to the original three-point supported position again.
摘要翻译：用于轨迹球装置的过载调节结构包括基座，顶盖，球，电路板，多个可旋转的轴和盘，以及过载调节器。该球在可旋转轴和过载调节器之间的基座中三点支撑。当球受到过载时，过载调节器中的弹簧被压缩，允许球沉入基座中的定位凹槽中并被限制自由旋转，从而防止过载。当球从过载中释放时，过载调节器中的弹簧将球弹性地推动到原来的三点支撑位置。

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