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    • 10. 发明授权
    • Thin film transistor, thin film transistor substrate, and methods for manufacturing the same
    • 薄膜晶体管,薄膜晶体管基板及其制造方法
    • US08139175B2
    • 2012-03-20
    • US12197416
    • 2008-08-25
    • Chin-Lung TingCheng-Chi Wang
    • Chin-Lung TingCheng-Chi Wang
    • G02F1/136
    • H01L29/78696H01L29/66757H01L29/78606H01L29/78675
    • A thin film transistor includes a channel layer of a specific shape, a thermal gradient inducer body, a gate insulating film, a gate electrode and an interlayer insulating film, a source electrode and a drain electrode. The channel layer is formed on a substrate. The channel layer has a nucleation region and a crystal end. The thermal gradient inducer body partially circumscribes the channel layer. The gate insulating film is formed on the substrate, and the channel layer is at least partially covered with the gate insulating film. The gate electrode is formed on the gate insulating film. The interlayer insulating film is formed on the gate insulating film, and the gate electrode is at least partially covered with the interlayer insulating film. The source electrode and the drain electrode are formed on the interlayer insulating film, passed through the gate insulating film and the interlayer insulating film, and electrically connected to the channel layer.
    • 薄膜晶体管包括特定形状的沟道层,热梯度诱导体,栅极绝缘膜,栅电极和层间绝缘膜,源电极和漏电极。 沟道层形成在基板上。 沟道层具有成核区域和晶体端部。 热梯度诱导体主体部分地界定通道层。 栅极绝缘膜形成在基板上,沟道层至少部分地被栅极绝缘膜覆盖。 栅电极形成在栅极绝缘膜上。 层间绝缘膜形成在栅极绝缘膜上,并且栅电极至少部分被层间绝缘膜覆盖。 源电极和漏极形成在层间绝缘膜上,通过栅极绝缘膜和层间绝缘膜,并与沟道层电连接。