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    • 5. 发明申请
    • METHOD FOR MANUFACTURING PIXEL STRUCTURE
    • 制造像素结构的方法
    • US20100055853A1
    • 2010-03-04
    • US12617712
    • 2009-11-12
    • Chih-Chun YangMing-Yuan HuangHan-Tu LinChih-Hung ShihTa-Wen LiaoKuo-Lung FangChia-Chi Tsai
    • Chih-Chun YangMing-Yuan HuangHan-Tu LinChih-Hung ShihTa-Wen LiaoKuo-Lung FangChia-Chi Tsai
    • H01L21/336
    • H01L27/1248H01L27/1288
    • A method for manufacturing a pixel structure is provided. A gate and a gate insulating layer are sequentially formed on a substrate. A semiconductor layer and a second metal layer are sequentially formed on the gate insulating layer. The semiconductor layer and the second metal layer are patterned to form a channel layer, a source and a drain by using a patterned photoresist layer formed thereon, wherein the source and drain are disposed on a portion of the channel layer. The gate, channel, source and drain form a thin film transistor. A passivation layer is formed on the patterned photoresist layer, the gate insulating layer and the thin film transistor. Then, the patterned photoresist layer is removed, such that the passivation layer thereon is removed simultaneously to form a patterned passivation layer and the drain is exposed. A pixel electrode is formed on the patterned passivation layer and the drain.
    • 提供了一种用于制造像素结构的方法。 栅极和栅极绝缘层依次形成在基板上。 半导体层和第二金属层依次形成在栅极绝缘层上。 通过使用形成在其上的图案化光致抗蚀剂层,将半导体层和第二金属层图案化以形成沟道层,源极和漏极,其中源极和漏极设置在沟道层的一部分上。 栅极,沟道,源极和漏极形成薄膜晶体管。 在图案化的光致抗蚀剂层,栅极绝缘层和薄膜晶体管上形成钝化层。 然后,去除图案化的光致抗蚀剂层,使得其上的钝化层被同时去除以形成图案化的钝化层,并且漏极被暴露。 在图案化的钝化层和漏极上形成像素电极。
    • 7. 发明申请
    • METHOD FOR MANUFACTURING PIXEL STRUCTURE
    • 制造像素结构的方法
    • US20090104722A1
    • 2009-04-23
    • US12342026
    • 2008-12-22
    • Chih-Hung ShihChih-Chun YangMing-Yuan Huang
    • Chih-Hung ShihChih-Chun YangMing-Yuan Huang
    • H01L21/77
    • H01L27/1288G02F1/136227H01L27/1214H01L27/3248H01L51/5206H01L51/56H01L2227/323
    • A method for manufacturing a pixel structure includes providing a substrate having an active device thereon and forming a dielectric layer covering the active device. The dielectric layer has a contact hole disposed over the active device. Next, a first photoresist layer is formed on the dielectric layer over the active device, and a transparent conductive layer is formed to cover a portion of the dielectric layer and the first photoresist layer. The transparent conductive layer is electrically connected to the active device via the contact hole. Besides, the transparent conductive layer is irradiated with use of a laser beam, and a portion of the transparent conductive layer on the first photoresist layer is removed, such that the other portion of the transparent conductive layer on the portion of the dielectric layer forms a pixel electrode. The first patterned photoresist layer is then removed.
    • 一种用于制造像素结构的方法包括提供其上具有有源器件的衬底,并形成覆盖有源器件的介电层。 电介质层具有设置在有源器件上方的接触孔。 接下来,在有源器件上的介电层上形成第一光致抗蚀剂层,并且形成透明导电层以覆盖电介质层和第一光致抗蚀剂层的一部分。 透明导电层经由接触孔与有源器件电连接。 此外,使用激光束照射透明导电层,并且去除第一光致抗蚀剂层上的透明导电层的一部分,使得介电层部分上的透明导电层的另一部分形成 像素电极。 然后去除第一图案化光致抗蚀剂层。