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1. 发明授权

US07816159B2 Method for fabricating pixel structure 有权
标题翻译：制造像素结构的方法
公开(公告)号：US07816159B2
公开(公告)日：2010-10-19
申请号：US12105279
申请日：2008-04-18
申请人： Kuo-Lung Fang , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Shiun-Chang Jan , Chia-Chi Tsai
发明人： Kuo-Lung Fang , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Shiun-Chang Jan , Chia-Chi Tsai
IPC分类号： H01L21/00
CPC分类号： H01L27/1248 , H01L27/1255 , H01L27/1288
摘要： A method for fabricating a pixel structure includes following steps. First, a substrate is provided. Next, a first conductive layer is formed on the substrate. Next, a first shadow mask is disposed over the first conductive layer. Next, a laser is applied through the first shadow mask to irradiate the first conductive layer to form a gate. Next, a gate dielectric layer is formed on the substrate to cover the gate. After that, a channel layer, a source and a drain are simultaneously formed on the gate dielectric layer over the gate, wherein the gate, the channel layer, the source and the drain together form a thin film transistor. A patterned passivation layer is formed on the thin film transistor and the patterned passivation layer exposes a part of the drain. Furthermore, a pixel electrode electrically connecting to the drain is formed.
摘要翻译：一种用于制造像素结构的方法包括以下步骤。首先，提供基板。接下来，在基板上形成第一导电层。接下来，在第一导电层上设置第一荫罩。接下来，通过第一荫罩施加激光以照射第一导电层以形成栅极。接下来，在基板上形成栅电介质层以覆盖栅极。之后，沟道层，源极和漏极同时形成在栅极上的栅极电介质层上，其中栅极，沟道层，源极和漏极一起形成薄膜晶体管。图案化的钝化层形成在薄膜晶体管上，并且图案化的钝化层露出一部分漏极。此外，形成电连接到漏极的像素电极。

2. 发明授权

US07648865B1 Method for manufacturing pixel structure 有权
标题翻译：像素结构制造方法
公开(公告)号：US07648865B1
公开(公告)日：2010-01-19
申请号：US12233607
申请日：2008-09-19
申请人： Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Kuo-Lung Fang , Chia-Chi Tsai
发明人： Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Kuo-Lung Fang , Chia-Chi Tsai
IPC分类号： H01L21/00
CPC分类号： H01L27/1248 , H01L27/1288
摘要： A method for manufacturing a pixel structure is provided. First, a gate and a gate insulating layer are sequentially formed on the substrate. A channel layer and a second metal layer are sequentially formed on the gate insulating layer. The second metal layer is patterned to form a source and a drain by using a patterned photoresist layer formed thereon, wherein the source and the drain are disposed on a portion of the channel layer. The gate, the channel, the source and the drain form a thin film transistor. A passivation layer is formed on the patterned photoresist layer, the gate insulating layer and the thin film transistor. Then, the patterned photoresist layer is removed, such that the passivation layer thereon is removed simultaneously to form a patterned passivation layer and the drain is exposed. A pixel electrode is formed on the patterned passivation layer and the drain.
摘要翻译：提供了一种用于制造像素结构的方法。首先，在基板上依次形成栅极和栅极绝缘层。沟道层和第二金属层依次形成在栅极绝缘层上。图案化第二金属层以通过使用其上形成的图案化光致抗蚀剂层来形成源极和漏极，其中源极和漏极设置在沟道层的一部分上。栅极，沟道，源极和漏极形成薄膜晶体管。在图案化的光致抗蚀剂层，栅极绝缘层和薄膜晶体管上形成钝化层。然后，去除图案化的光致抗蚀剂层，使得其上的钝化层被同时去除以形成图案化的钝化层，并且漏极被暴露。在图案化的钝化层和漏极上形成像素电极。

3. 发明申请

US20090148987A1 METHOD FOR FABRICATING PIXEL STRUCTURE 有权
标题翻译：制造像素结构的方法
公开(公告)号：US20090148987A1
公开(公告)日：2009-06-11
申请号：US12105278
申请日：2008-04-18
申请人： Ta-Wen Liao , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Chin-Yueh Liao , Chia-Chi Tsai
发明人： Ta-Wen Liao , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Chin-Yueh Liao , Chia-Chi Tsai
IPC分类号： H01L21/00
CPC分类号： G02F1/136227 , G02F1/13439
摘要： A method for fabricating a pixel structure is disclosed. A substrate is provided. A first conductive layer is formed on the substrate, and a first shadow mask exposing a portion of the first conductive layer is disposed over the first conductive layer. Laser is used to irradiate the first conductive layer for removing the part of the first conductive layer and forming a gate. A gate dielectric layer is formed on the substrate to cover the gate. A channel layer is formed on the gate dielectric layer over the gate. A source and a drain are formed on the channel layer and respectively above both sides of the gate. A patterned passivation layer is formed to cover the channel layer and expose the drain. An electrode material layer is formed to cover the patterned passivation layer and the exposed drain.
摘要翻译：公开了一种用于制造像素结构的方法。提供基板。第一导电层形成在衬底上，并且暴露第一导电层的一部分的第一阴影掩模设置在第一导电层上。激光用于照射第一导电层以去除第一导电层的一部分并形成栅极。栅极电介质层形成在衬底上以覆盖栅极。沟道层形成在栅极上的栅极电介质层上。源极和漏极形成在沟道层上并且分别在栅极的两侧上方。形成图案化的钝化层以覆盖沟道层并露出漏极。形成电极材料层以覆盖图案化的钝化层和暴露的漏极。

4. 发明授权

US07897442B2 Method for fabricating pixel structure 有权
标题翻译：制造像素结构的方法
公开(公告)号：US07897442B2
公开(公告)日：2011-03-01
申请号：US12105278
申请日：2008-04-18
申请人： Ta-Wen Liao , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Chin-Yueh Liao , Chia-Chi Tsai
发明人： Ta-Wen Liao , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Chin-Yueh Liao , Chia-Chi Tsai
IPC分类号： H01L21/00
CPC分类号： G02F1/136227 , G02F1/13439
摘要： A method for fabricating a pixel structure is disclosed. A substrate is provided. A first conductive layer is formed on the substrate, and a first shadow mask exposing a portion of the first conductive layer is disposed over the first conductive layer. Laser is used to irradiate the first conductive layer for removing the part of the first conductive layer and forming a gate. A gate dielectric layer is formed on the substrate to cover the gate. A channel layer is formed on the gate dielectric layer over the gate. A source and a drain are formed on the channel layer and respectively above both sides of the gate. A patterned passivation layer is formed to cover the channel layer and expose the drain. An electrode material layer is formed to cover the patterned passivation layer and the exposed drain.
摘要翻译：公开了一种用于制造像素结构的方法。提供基板。第一导电层形成在衬底上，并且暴露第一导电层的一部分的第一阴影掩模设置在第一导电层上。激光用于照射第一导电层以去除第一导电层的一部分并形成栅极。栅极电介质层形成在衬底上以覆盖栅极。沟道层形成在栅极上的栅极电介质层上。源极和漏极形成在沟道层上并且分别在栅极的两侧上方。形成图案化的钝化层以覆盖沟道层并露出漏极。形成电极材料层以覆盖图案化的钝化层和暴露的漏极。

5. 发明申请

US20090325331A1 METHOD FOR MANUFACTURING PIXEL STRUCTURE 有权
标题翻译：制造像素结构的方法
公开(公告)号：US20090325331A1
公开(公告)日：2009-12-31
申请号：US12233607
申请日：2008-09-19
申请人： Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Kuo-Lung Fang , Chia-Chi Tsai
发明人： Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Kuo-Lung Fang , Chia-Chi Tsai
IPC分类号： H01L21/00 , H01L21/84 , H01L21/44
CPC分类号： H01L27/1248 , H01L27/1288
摘要： A method for manufacturing a pixel structure is provided. First, a gate and a gate insulating layer are sequentially formed on the substrate. A channel layer and a second metal layer are sequentially formed on the gate insulating layer. The second metal layer is patterned to form a source and a drain by using a patterned photoresist layer formed thereon, wherein the source and the drain are disposed on a portion of the channel layer. The gate, the channel, the source and the drain form a thin film transistor. A passivation layer is formed on the patterned photoresist layer, the gate insulating layer and the thin film transistor. Then, the patterned photoresist layer is removed, such that the passivation layer thereon is removed simultaneously to form a patterned passivation layer and the drain is exposed. A pixel electrode is formed on the patterned passivation layer and the drain.
摘要翻译：提供了一种用于制造像素结构的方法。首先，在基板上依次形成栅极和栅极绝缘层。沟道层和第二金属层依次形成在栅极绝缘层上。图案化第二金属层以通过使用其上形成的图案化光致抗蚀剂层来形成源极和漏极，其中源极和漏极设置在沟道层的一部分上。栅极，沟道，源极和漏极形成薄膜晶体管。在图案化的光致抗蚀剂层，栅极绝缘层和薄膜晶体管上形成钝化层。然后，去除图案化的光致抗蚀剂层，使得其上的钝化层被同时去除以形成图案化的钝化层，并且漏极被暴露。在图案化的钝化层和漏极上形成像素电极。

6. 发明申请

US20090053844A1 METHOD FOR FABRICATING PIXEL STRUCTURE 审中-公开
标题翻译：制造像素结构的方法
公开(公告)号：US20090053844A1
公开(公告)日：2009-02-26
申请号：US12050928
申请日：2008-03-18
申请人： Ming-Yuan Huang , Chih-Chun Yang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Chin-Yueh Liao , Chia-Chi Tsai
发明人： Ming-Yuan Huang , Chih-Chun Yang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Chin-Yueh Liao , Chia-Chi Tsai
IPC分类号： H01L33/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/1255
摘要： A method for fabricating a pixel structure is provided. A substrate having a gate thereon is provided. Next, a gate dielectric layer is formed to cover the gate. A channel layer is formed on the gate dielectric layer above the gate. A source and a drain are formed on the channel layer at two sides of the gate, wherein the gate, the channel layer, the source and the drain constitute a thin film transistor (TFT). A passivation layer is formed on the gate dielectric layer and the TFT. A first shadow mask exposing parts of the passivation layer is provided thereabove. The drain is exposed by a laser applied via the first shadow mask to partially remove the passivation layer. A conductive layer is formed to cover the passivation layer and the drain. The conductive layer is then automatically patterned by the patterned passivation layer to form a pixel electrode.
摘要翻译：提供了一种用于制造像素结构的方法。提供了具有栅极的基板。接下来，形成栅极电介质层以覆盖栅极。沟道层形成在栅极上方的栅极电介质层上。源极和漏极形成在栅极两侧的沟道层上，其中栅极，沟道层，源极和漏极构成薄膜晶体管（TFT）。在栅极电介质层和TFT上形成钝化层。暴露部分钝化层的第一荫罩在其上方设置。漏极通过经由第一荫罩施加的激光曝光以部分地去除钝化层。形成导电层以覆盖钝化层和漏极。导电层然后通过图案化的钝化层自动图案化以形成像素电极。

7. 发明申请

US20100055853A1 METHOD FOR MANUFACTURING PIXEL STRUCTURE 有权
标题翻译：制造像素结构的方法
公开(公告)号：US20100055853A1
公开(公告)日：2010-03-04
申请号：US12617712
申请日：2009-11-12
申请人： Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Kuo-Lung Fang , Chia-Chi Tsai
发明人： Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Kuo-Lung Fang , Chia-Chi Tsai
IPC分类号： H01L21/336
CPC分类号： H01L27/1248 , H01L27/1288
摘要： A method for manufacturing a pixel structure is provided. A gate and a gate insulating layer are sequentially formed on a substrate. A semiconductor layer and a second metal layer are sequentially formed on the gate insulating layer. The semiconductor layer and the second metal layer are patterned to form a channel layer, a source and a drain by using a patterned photoresist layer formed thereon, wherein the source and drain are disposed on a portion of the channel layer. The gate, channel, source and drain form a thin film transistor. A passivation layer is formed on the patterned photoresist layer, the gate insulating layer and the thin film transistor. Then, the patterned photoresist layer is removed, such that the passivation layer thereon is removed simultaneously to form a patterned passivation layer and the drain is exposed. A pixel electrode is formed on the patterned passivation layer and the drain.
摘要翻译：提供了一种用于制造像素结构的方法。栅极和栅极绝缘层依次形成在基板上。半导体层和第二金属层依次形成在栅极绝缘层上。通过使用形成在其上的图案化光致抗蚀剂层，将半导体层和第二金属层图案化以形成沟道层，源极和漏极，其中源极和漏极设置在沟道层的一部分上。栅极，沟道，源极和漏极形成薄膜晶体管。在图案化的光致抗蚀剂层，栅极绝缘层和薄膜晶体管上形成钝化层。然后，去除图案化的光致抗蚀剂层，使得其上的钝化层被同时去除以形成图案化的钝化层，并且漏极被暴露。在图案化的钝化层和漏极上形成像素电极。

8. 发明申请

US20090148972A1 METHOD FOR FABRICATING PIXEL STRUCTURE 有权
标题翻译：制造像素结构的方法
公开(公告)号：US20090148972A1
公开(公告)日：2009-06-11
申请号：US12105279
申请日：2008-04-18
申请人： Kuo-Lung Fang , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Shiun-Chang Jan , Chia-Chi Tsai
发明人： Kuo-Lung Fang , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Shiun-Chang Jan , Chia-Chi Tsai
IPC分类号： H01L21/00
CPC分类号： H01L27/1248 , H01L27/1255 , H01L27/1288
摘要： A method for fabricating a pixel structure includes following steps. First, a substrate is provided. Next, a first conductive layer is formed on the substrate. Next, a first shadow mask is disposed over the first conductive layer. Next, a laser is applied through the first shadow mask to irradiate the first conductive layer to form a gate. Next, a gate dielectric layer is formed on the substrate to cover the gate. After that, a channel layer, a source and a drain are simultaneously formed on the gate dielectric layer over the gate, wherein the gate, the channel layer, the source and the drain together form a thin film transistor. A patterned passivation layer is formed on the thin film transistor and the patterned passivation layer exposes a part of the drain. Furthermore, a pixel electrode electrically connecting to the drain is formed.
摘要翻译：一种用于制造像素结构的方法包括以下步骤。首先，提供基板。接下来，在基板上形成第一导电层。接下来，在第一导电层上设置第一荫罩。接下来，通过第一荫罩施加激光以照射第一导电层以形成栅极。接下来，在基板上形成栅电介质层以覆盖栅极。之后，沟道层，源极和漏极同时形成在栅极上的栅极电介质层上，其中栅极，沟道层，源极和漏极一起形成薄膜晶体管。图案化的钝化层形成在薄膜晶体管上，并且图案化的钝化层露出一部分漏极。此外，形成电连接到漏极的像素电极。

9. 发明申请

US20090087954A1 METHOD FOR FABRICATING PIXEL STRUCTURE 有权
标题翻译：制造像素结构的方法
公开(公告)号：US20090087954A1
公开(公告)日：2009-04-02
申请号：US12017342
申请日：2008-01-22
申请人： Han-Tu Lin , Chih-Chun Yang , Ming-Yuan Huang , Chih-Hung Shih , Ta-Wen Liao , Chia-Chi Tsai
发明人： Han-Tu Lin , Chih-Chun Yang , Ming-Yuan Huang , Chih-Hung Shih , Ta-Wen Liao , Chia-Chi Tsai
IPC分类号： H01L21/00
CPC分类号： H01L27/14692 , H01L27/124 , H01L27/1288
摘要： A method for fabricating a pixel structure using a laser ablation process is provided. This fabrication method forms a gate, a channel layer, a source, a drain, a passivation layer, and a pixel electrode sequentially by using a laser ablation process. Particularly, the fabrication method is not similar to a photolithography and etching process, so as to reduce the complicated photolithography and etching processes, such as spin coating process, soft-bake, hard-bake, exposure, developing, etching, and stripping. Therefore, the fabrication method simplifies the process and thus reduces the fabrication cost.
摘要翻译：提供了一种使用激光烧蚀工艺制造像素结构的方法。该制造方法通过使用激光烧蚀工艺依次形成栅极，沟道层，源极，漏极，钝化层和像素电极。特别地，制造方法与光刻和蚀刻工艺不同，从而减少旋涂，软烘烤，硬烘烤，曝光，显影，蚀刻和剥离等复杂的光刻和蚀刻工艺。因此，制造方法简化了工艺，从而降低了制造成本。

10. 发明申请

US20090053861A1 METHOD FOR FABRICATING PIXEL STRUCTURE 审中-公开
标题翻译：制造像素结构的方法
公开(公告)号：US20090053861A1
公开(公告)日：2009-02-26
申请号：US12040914
申请日：2008-03-02
申请人： Chin-Yueh Liao , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Chia-Chi Tsai
发明人： Chin-Yueh Liao , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Chia-Chi Tsai
IPC分类号： H01L21/336
CPC分类号： H01L27/1288 , H01L27/1214
摘要： A method for fabricating a pixel structure is provided. A substrate is provided, and a gate is formed on the substrate. A gate dielectric layer covering the gate is formed on the substrate. A semiconductor layer is formed on the gate dielectric layer. A first shadow mask exposing parts of the semiconductor layer is provided above the semiconductor layer. A laser is irradiated on the semiconductor layer through the first shadow mask to remove parts of semiconductor layer and form a channel layer. A source and a drain are respectively formed on the channel layer at both sides of the gate. A patterned passivation layer which covers the channel layer and exposes the drain is formed. A conductive layer is formed to cover the patterned passivation layer and the drain. The conductive layer is automatically patterned by the patterned passivation layer to form a pixel electrode.
摘要翻译：提供了一种用于制造像素结构的方法。提供衬底，并且在衬底上形成栅极。在基板上形成覆盖栅极的栅介质层。在栅极电介质层上形成半导体层。暴露半导体层的部分的第一荫罩设置在半导体层的上方。通过第一荫罩将激光照射在半导体层上，以除去半导体层的一部分并形成沟道层。源极和漏极分别形成在栅极两侧的沟道层上。形成覆盖沟道层并露出漏极的图案化钝化层。形成导电层以覆盖图案化的钝化层和漏极。导电层由图形化的钝化层自动图案化以形成像素电极。

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