专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07897442B2 Method for fabricating pixel structure 有权
标题翻译：制造像素结构的方法
公开(公告)号：US07897442B2
公开(公告)日：2011-03-01
申请号：US12105278
申请日：2008-04-18
申请人： Ta-Wen Liao , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Chin-Yueh Liao , Chia-Chi Tsai
发明人： Ta-Wen Liao , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Chin-Yueh Liao , Chia-Chi Tsai
IPC分类号： H01L21/00
CPC分类号： G02F1/136227 , G02F1/13439
摘要： A method for fabricating a pixel structure is disclosed. A substrate is provided. A first conductive layer is formed on the substrate, and a first shadow mask exposing a portion of the first conductive layer is disposed over the first conductive layer. Laser is used to irradiate the first conductive layer for removing the part of the first conductive layer and forming a gate. A gate dielectric layer is formed on the substrate to cover the gate. A channel layer is formed on the gate dielectric layer over the gate. A source and a drain are formed on the channel layer and respectively above both sides of the gate. A patterned passivation layer is formed to cover the channel layer and expose the drain. An electrode material layer is formed to cover the patterned passivation layer and the exposed drain.
摘要翻译：公开了一种用于制造像素结构的方法。提供基板。第一导电层形成在衬底上，并且暴露第一导电层的一部分的第一阴影掩模设置在第一导电层上。激光用于照射第一导电层以去除第一导电层的一部分并形成栅极。栅极电介质层形成在衬底上以覆盖栅极。沟道层形成在栅极上的栅极电介质层上。源极和漏极形成在沟道层上并且分别在栅极的两侧上方。形成图案化的钝化层以覆盖沟道层并露出漏极。形成电极材料层以覆盖图案化的钝化层和暴露的漏极。

2. 发明申请

US20090053844A1 METHOD FOR FABRICATING PIXEL STRUCTURE 审中-公开
标题翻译：制造像素结构的方法
公开(公告)号：US20090053844A1
公开(公告)日：2009-02-26
申请号：US12050928
申请日：2008-03-18
申请人： Ming-Yuan Huang , Chih-Chun Yang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Chin-Yueh Liao , Chia-Chi Tsai
发明人： Ming-Yuan Huang , Chih-Chun Yang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Chin-Yueh Liao , Chia-Chi Tsai
IPC分类号： H01L33/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/1255
摘要： A method for fabricating a pixel structure is provided. A substrate having a gate thereon is provided. Next, a gate dielectric layer is formed to cover the gate. A channel layer is formed on the gate dielectric layer above the gate. A source and a drain are formed on the channel layer at two sides of the gate, wherein the gate, the channel layer, the source and the drain constitute a thin film transistor (TFT). A passivation layer is formed on the gate dielectric layer and the TFT. A first shadow mask exposing parts of the passivation layer is provided thereabove. The drain is exposed by a laser applied via the first shadow mask to partially remove the passivation layer. A conductive layer is formed to cover the passivation layer and the drain. The conductive layer is then automatically patterned by the patterned passivation layer to form a pixel electrode.
摘要翻译：提供了一种用于制造像素结构的方法。提供了具有栅极的基板。接下来，形成栅极电介质层以覆盖栅极。沟道层形成在栅极上方的栅极电介质层上。源极和漏极形成在栅极两侧的沟道层上，其中栅极，沟道层，源极和漏极构成薄膜晶体管（TFT）。在栅极电介质层和TFT上形成钝化层。暴露部分钝化层的第一荫罩在其上方设置。漏极通过经由第一荫罩施加的激光曝光以部分地去除钝化层。形成导电层以覆盖钝化层和漏极。导电层然后通过图案化的钝化层自动图案化以形成像素电极。

3. 发明申请

US20090053861A1 METHOD FOR FABRICATING PIXEL STRUCTURE 审中-公开
标题翻译：制造像素结构的方法
公开(公告)号：US20090053861A1
公开(公告)日：2009-02-26
申请号：US12040914
申请日：2008-03-02
申请人： Chin-Yueh Liao , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Chia-Chi Tsai
发明人： Chin-Yueh Liao , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Ta-Wen Liao , Chia-Chi Tsai
IPC分类号： H01L21/336
CPC分类号： H01L27/1288 , H01L27/1214
摘要： A method for fabricating a pixel structure is provided. A substrate is provided, and a gate is formed on the substrate. A gate dielectric layer covering the gate is formed on the substrate. A semiconductor layer is formed on the gate dielectric layer. A first shadow mask exposing parts of the semiconductor layer is provided above the semiconductor layer. A laser is irradiated on the semiconductor layer through the first shadow mask to remove parts of semiconductor layer and form a channel layer. A source and a drain are respectively formed on the channel layer at both sides of the gate. A patterned passivation layer which covers the channel layer and exposes the drain is formed. A conductive layer is formed to cover the patterned passivation layer and the drain. The conductive layer is automatically patterned by the patterned passivation layer to form a pixel electrode.
摘要翻译：提供了一种用于制造像素结构的方法。提供衬底，并且在衬底上形成栅极。在基板上形成覆盖栅极的栅介质层。在栅极电介质层上形成半导体层。暴露半导体层的部分的第一荫罩设置在半导体层的上方。通过第一荫罩将激光照射在半导体层上，以除去半导体层的一部分并形成沟道层。源极和漏极分别形成在栅极两侧的沟道层上。形成覆盖沟道层并露出漏极的图案化钝化层。形成导电层以覆盖图案化的钝化层和漏极。导电层由图形化的钝化层自动图案化以形成像素电极。

4. 发明申请

US20090148987A1 METHOD FOR FABRICATING PIXEL STRUCTURE 有权
标题翻译：制造像素结构的方法
公开(公告)号：US20090148987A1
公开(公告)日：2009-06-11
申请号：US12105278
申请日：2008-04-18
申请人： Ta-Wen Liao , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Chin-Yueh Liao , Chia-Chi Tsai
发明人： Ta-Wen Liao , Chih-Chun Yang , Ming-Yuan Huang , Han-Tu Lin , Chih-Hung Shih , Chin-Yueh Liao , Chia-Chi Tsai
IPC分类号： H01L21/00
CPC分类号： G02F1/136227 , G02F1/13439
摘要： A method for fabricating a pixel structure is disclosed. A substrate is provided. A first conductive layer is formed on the substrate, and a first shadow mask exposing a portion of the first conductive layer is disposed over the first conductive layer. Laser is used to irradiate the first conductive layer for removing the part of the first conductive layer and forming a gate. A gate dielectric layer is formed on the substrate to cover the gate. A channel layer is formed on the gate dielectric layer over the gate. A source and a drain are formed on the channel layer and respectively above both sides of the gate. A patterned passivation layer is formed to cover the channel layer and expose the drain. An electrode material layer is formed to cover the patterned passivation layer and the exposed drain.
摘要翻译：公开了一种用于制造像素结构的方法。提供基板。第一导电层形成在衬底上，并且暴露第一导电层的一部分的第一阴影掩模设置在第一导电层上。激光用于照射第一导电层以去除第一导电层的一部分并形成栅极。栅极电介质层形成在衬底上以覆盖栅极。沟道层形成在栅极上的栅极电介质层上。源极和漏极形成在沟道层上并且分别在栅极的两侧上方。形成图案化的钝化层以覆盖沟道层并露出漏极。形成电极材料层以覆盖图案化的钝化层和暴露的漏极。

5. 发明申请

US20110070671A1 FABRICATING METHOD OF A PIXEL UNIT 审中-公开
标题翻译：像素单元的制作方法
公开(公告)号：US20110070671A1
公开(公告)日：2011-03-24
申请号：US12953472
申请日：2010-11-24
申请人： Chin-Yueh Liao , Chih-Chun Yang , Chih-Hung Shih , Shine-Kai Tseng
发明人： Chin-Yueh Liao , Chih-Chun Yang , Chih-Hung Shih , Shine-Kai Tseng
IPC分类号： H01L33/36
CPC分类号： H01L27/1288 , H01L27/1214
摘要： A method for fabricating a pixel unit is provided. A TFT is formed on a substrate. A protection layer and a patterned photoresist layer are sequentially formed on the substrate entirely. A patterned protection layer is formed by using the patterned photoresist layer as a mask and partially removing the protection layer, wherein the patterned protection layer has an undercut located at a sidewall thereof. A pixel electrode material layer is formed to cover the substrate, the TFT and the patterned photoresist layer, wherein the electrode material layer is disconnected at the undercut and exposes the undercut. A pixel electrode electrically connected to the TFT is formed by lifting off the patterned photoresist layer and parts of the electrode material layer covering the patterned photoresist layer simultaneously through a stripper, wherein the stripper permeates from the undercut to an interface of the patterned photoresist layer and the patterned protection layer.
摘要翻译：提供了一种用于制造像素单元的方法。在基板上形成TFT。保护层和图案化的光致抗蚀剂层完全依次形成在基板上。通过使用图案化的光致抗蚀剂层作为掩模并且部分地去除保护层来形成图案化的保护层，其中图案化的保护层具有位于其侧壁处的底切。形成像素电极材料层以覆盖衬底，TFT和图案化光致抗蚀剂层，其中电极材料层在底切处断开并暴露底切。电连接到TFT的像素电极通过剥离图案化的光致抗蚀剂层和覆盖图案化的光致抗蚀剂层的电极材料层的部分同时通过剥离器形成，其中剥离剂从底切渗透到图案化的光致抗蚀剂层和图案化保护层。

6. 发明申请

US20090242883A1 Thin film transistor, active array substrate and method for manufacturing the same 审中-公开
标题翻译：薄膜晶体管，有源阵列基板及其制造方法
公开(公告)号：US20090242883A1
公开(公告)日：2009-10-01
申请号：US12149858
申请日：2008-05-09
申请人： Han-Tu Lin , Chih-Chun Yang , Chin-Yueh Liao , Chien-Hung Chen
发明人： Han-Tu Lin , Chih-Chun Yang , Chin-Yueh Liao , Chien-Hung Chen
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L29/42384 , H01L27/1218 , H01L27/124 , H01L29/66765 , H01L29/78603
摘要： A thin film transistor, an active array substrate having the same and methods for manufacturing the same are provided. The thin film transistor includes a base having a concave; a gate disposed in the concave; a gate insulator covering the gate and a portion of the gate insulator is in the concave; a channel layer disposed on the gate insulator; and a source and a drain are disposed on the channel layer and located in response to two sides of the gate.
摘要翻译：提供薄膜晶体管，具有该薄膜晶体管的有源阵列基板及其制造方法。薄膜晶体管包括具有凹面的基底; 设置在凹面中的门; 覆盖栅极的栅极绝缘体和栅极绝缘体的一部分在凹部中; 设置在栅极绝缘体上的沟道层; 并且源极和漏极设置在沟道层上并且响应于栅极的两侧而定位。

7. 发明申请

US20120208305A1 FABRICATING METHOD OF A PIXEL UNIT 审中-公开
标题翻译：像素单元的制作方法
公开(公告)号：US20120208305A1
公开(公告)日：2012-08-16
申请号：US13454106
申请日：2012-04-24
申请人： Chin-Yueh Liao , Chih-Chun Yang , Chih-Hung Shih , Shine-Kai Tseng
发明人： Chin-Yueh Liao , Chih-Chun Yang , Chih-Hung Shih , Shine-Kai Tseng
IPC分类号： H01L33/36
CPC分类号： H01L27/1288 , H01L27/1214
摘要： A method for fabricating a pixel unit is provided. A TFT is formed on a substrate. A protection layer and a patterned photoresist layer are sequentially formed on the substrate entirely. A patterned protection layer is formed by using the patterned photoresist layer as a mask and partially removing the protection layer, wherein the patterned protection layer has an undercut located at a sidewall thereof A pixel electrode material layer is formed to cover the substrate, the TFT and the patterned photoresist layer, wherein the electrode material layer is disconnected at the undercut and exposes the undercut. A pixel electrode electrically connected to the TFT is formed by lifting off the patterned photoresist layer and parts of the electrode material layer covering the patterned photoresist layer simultaneously through a stripper, wherein the stripper permeates from the undercut to an interface of the patterned photoresist layer and the patterned protection layer.
摘要翻译：提供了一种用于制造像素单元的方法。在基板上形成TFT。保护层和图案化的光致抗蚀剂层完全依次形成在基板上。通过使用图案化的光致抗蚀剂层作为掩模并且部分地去除保护层来形成图案化的保护层，其中图案化的保护层具有位于其侧壁处的底切。形成像素电极材料层以覆盖基板，TFT和图案化的光致抗蚀剂层，其中电极材料层在底切处断开并暴露底切。电连接到TFT的像素电极通过剥离图案化的光致抗蚀剂层和覆盖图案化的光致抗蚀剂层的电极材料层的部分同时通过剥离器形成，其中剥离剂从底切渗透到图案化的光致抗蚀剂层和图案化保护层。

8. 发明申请

US20110068345A1 PIXEL UNIT 审中-公开
标题翻译：像素单元
公开(公告)号：US20110068345A1
公开(公告)日：2011-03-24
申请号：US12953471
申请日：2010-11-24
申请人： Chin-Yueh Liao , Chih-Chun Yang , Chih-Hung Shih , Shine-Kai Tseng
发明人： Chin-Yueh Liao , Chih-Chun Yang , Chih-Hung Shih , Shine-Kai Tseng
IPC分类号： H01L29/786
CPC分类号： H01L27/1288 , H01L27/1214
摘要： A pixel unit is disposed on a substrate, and the pixel unit includes a thin film transistor (TFT), a patterned protection layer, and a pixel electrode. The TFT is disposed on the substrate. The patterned protection layer is disposed on the TFT. The patterned protection layer is porous and has an undercut located at a sidewall thereof. The pixel electrode is electrically connected to the TFT.
摘要翻译：像素单元设置在基板上，像素单元包括薄膜晶体管（TFT），图案化保护层和像素电极。 TFT设置在基板上。图案化保护层设置在TFT上。图案化保护层是多孔的并且具有位于其侧壁处的底切。像素电极电连接到TFT。

9. 发明申请

US20100258810A1 PIXEL UNIT AND FABRICATING METHOD THEREOF 审中-公开
标题翻译：像素单元及其制作方法
公开(公告)号：US20100258810A1
公开(公告)日：2010-10-14
申请号：US12482433
申请日：2009-06-10
申请人： Chin-Yueh Liao , Chih-Chun Yang , Chih-Hung Shih , Shine-Kai Tseng
发明人： Chin-Yueh Liao , Chih-Chun Yang , Chih-Hung Shih , Shine-Kai Tseng
IPC分类号： H01L29/786 , H01L21/336 , H01L29/92 , H01L21/02
CPC分类号： H01L27/1288 , H01L27/1214
摘要： A method for fabricating a pixel unit is provided. A TFT is formed on a substrate. A protection layer and a patterned photoresist layer are sequentially formed on the substrate entirely. A patterned protection layer is formed by using the patterned photoresist layer as a mask and partially removing the protection layer, wherein the patterned protection layer has an undercut located at a sidewall thereof. A pixel electrode material layer is formed to cover the substrate, the TFT and the patterned photoresist layer, wherein the electrode material layer is disconnected at the undercut and exposes the undercut. A pixel electrode electrically connected to the TFT is formed by lifting off the patterned photoresist layer and parts of the electrode material layer covering the patterned photoresist layer simultaneously through a stripper, wherein the stripper permeates from the undercut to an interface of the patterned photoresist layer and the patterned protection layer.
摘要翻译：提供了一种用于制造像素单元的方法。在基板上形成TFT。保护层和图案化的光致抗蚀剂层完全依次形成在基板上。通过使用图案化的光致抗蚀剂层作为掩模并且部分地去除保护层来形成图案化的保护层，其中图案化的保护层具有位于其侧壁处的底切。形成像素电极材料层以覆盖衬底，TFT和图案化光致抗蚀剂层，其中电极材料层在底切处断开并暴露底切。电连接到TFT的像素电极通过剥离图案化的光致抗蚀剂层和覆盖图案化的光致抗蚀剂层的电极材料层的部分同时通过剥离器形成，其中剥离剂从底切渗透到图案化的光致抗蚀剂层和图案化保护层。

10. 发明授权

US07749821B2 Method of fabricating pixel structure 有权
标题翻译：制作像素结构的方法
公开(公告)号：US07749821B2
公开(公告)日：2010-07-06
申请号：US12489451
申请日：2009-06-23
申请人： Hsiang-Chih Hsiao , Chih-Chun Yang , Chin-Yueh Liao
发明人： Hsiang-Chih Hsiao , Chih-Chun Yang , Chin-Yueh Liao
IPC分类号： H01L21/28
CPC分类号： H01L27/1259 , H01L27/1214 , H01L27/1255 , H01L27/1288
摘要： A method of fabricating a pixel structure includes first forming a first, a second, and a third dielectric layers over an active device and a substrate. Etching rates of the first and the third dielectric layers are lower than an etching rate of the second dielectric layer. A contact opening exposing a portion of the active device is formed in the third, the second, and the first dielectric layers. The third and the second dielectric layers are patterned to form a number of stacked structures. An electrode material layer is formed and fills the contact opening. The electrode material layer located on the stacked structures and the electrode material layer located on the first dielectric layer are separated. The stacked structures and the electrode material layer thereon are simultaneously removed to define a pixel electrode and to form at least an alignment slit in the pixel electrode.
摘要翻译：制造像素结构的方法包括首先在有源器件和衬底上形成第一，第二和第三电介质层。第一和第三介电层的蚀刻速率低于第二介电层的蚀刻速率。在第三，第二和第一电介质层中形成暴露有源器件的一部分的接触开口。图案化第三和第二介电层以形成多个层叠结构。形成电极材料层并填充接触开口。位于堆叠结构上的电极材料层和位于第一介电层上的电极材料层被分离。同时去除其上的层叠结构和电极材料层以限定像素电极并且在像素电极中形成至少一个对准狭缝。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式