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1. 发明授权

US07238265B2 Electroplating apparatus with functions of voltage detection and flow rectification 有权
标题翻译：具有电压检测和流量整流功能的电镀设备
公开(公告)号：US07238265B2
公开(公告)日：2007-07-03
申请号：US10743496
申请日：2003-12-23
申请人： Chih-Cheng Wang , Chih-Yuan Tseng , Jen-Rong Huang , Sheng-Lang Lee , Chia-Ming Chen , Pang-Ming Chiang
发明人： Chih-Cheng Wang , Chih-Yuan Tseng , Jen-Rong Huang , Sheng-Lang Lee , Chia-Ming Chen , Pang-Ming Chiang
IPC分类号： C25B9/04 , C25F7/00
CPC分类号： C25D5/08 , C25D17/001 , C25D17/008 , C25D21/10
摘要： The present invention provides a fountain-type electroplating apparatus with functions of voltage detection and flow rectification, comprising: an electroplating tank, a rectification device, and an overflow tank, wherein the electroplating tank is positioned inside the overflow tank, and the rectification device is arranged under the electroplating tank, in addition, the electroplating tank is composed of a shell, a cathode electrode, and an mesh shaped anode. The apparatus of the present invention further comprises: a power supplier, a switcher, a plurality of detection circuits, and a plurality of connecting line, which is used for monitoring the same.
摘要翻译：本发明提供一种具有电压检测和整流功能的喷泉型电镀设备，包括：电镀槽，整流装置和溢流槽，其中电镀槽位于溢流槽内，整流装置为另外，电镀槽由电镀槽构成，由电解槽，阴极电极和网状阳极构成。本发明的装置还包括：电源，切换器，多个检测电路和多个连接线，用于对其进行监视。

2. 发明申请

US20050051425A1 Electroplating apparatus with functions of voltage detection and flow rectification 有权
标题翻译：具有电压检测和流量整流功能的电镀设备
公开(公告)号：US20050051425A1
公开(公告)日：2005-03-10
申请号：US10743496
申请日：2003-12-23
申请人： Chih-Cheng Wang , Chih-Yuan Tseng , Jen-Rong Huang , Sheng-Lang Lee , Chia-Ming Chen , Pang-Ming Chiang
发明人： Chih-Cheng Wang , Chih-Yuan Tseng , Jen-Rong Huang , Sheng-Lang Lee , Chia-Ming Chen , Pang-Ming Chiang
IPC分类号： C25C7/00 , C25D5/08 , C25D17/00 , C25D21/10 , G01R19/00
CPC分类号： C25D5/08 , C25D17/001 , C25D17/008 , C25D21/10
摘要： The present invention provides a fountain-type electroplating apparatus with functions of voltage detection and flow rectification, comprising: an electroplating tank, a rectification device, and an overflow tank, wherein the electroplating tank is positioned inside the overflow tank, and the rectification device is arranged under the electroplating tank, in addition, the electroplating tank is composed of a shell, a cathode electrode, and an mesh shaped anode. The apparatus of the present invention further comprises: a power supplier, a switcher, a plurality of detection circuits, and a plurality of connecting line, which is used for monitoring the same.
摘要翻译：本发明提供一种具有电压检测和整流功能的喷泉型电镀设备，包括：电镀槽，整流装置和溢流槽，其中电镀槽位于溢流槽内，整流装置为另外，电镀槽由电镀槽构成，由电解槽，阴极电极和网状阳极构成。本发明的装置还包括：电源，切换器，多个检测电路和多个连接线，用于对其进行监视。

3. 发明授权

US07449091B2 Wafer electroplating apparatus 有权
标题翻译：晶圆电镀设备
公开(公告)号：US07449091B2
公开(公告)日：2008-11-11
申请号：US11073655
申请日：2005-03-08
申请人： Chen-Chung Du , Jen-Rong Huang , Pang-Ming Chiang , Chih-Yuan Tseng , Muh-Wang Liang , Chih-Cheng Wang , Yi-Chao Weng
发明人： Chen-Chung Du , Jen-Rong Huang , Pang-Ming Chiang , Chih-Yuan Tseng , Muh-Wang Liang , Chih-Cheng Wang , Yi-Chao Weng
IPC分类号： B01D19/00 , C25B15/00
CPC分类号： C25D21/04 , C25D5/003 , C25D5/08 , C25D7/123 , C25D17/001
摘要： A wafer electroplating apparatus with a function of bubble removal includes an electroplating bath main body and a fixing device. The electroplating bath main body has an inlet device, a first de-bubble tank and at least an air hole. The fixing device has a second de-bubble tank and an outer shell. The air hole guides gathering bubbles to an outside of the electroplating bath main body so as to remove bubbles. The fixing device can be put into the first de-bubble tank within the electroplating bath main body to form a de-bubble area and is separated easily therefrom to clean the wafer electroplating apparatus. The electroplating bath main body further includes a baffle for rectifying electroplating solution flow before entering the inlet device.
摘要翻译：具有除泡功能的晶片电镀装置包括电镀浴主体和定影装置。电镀浴主体具有入口装置，第一去泡箱和至少一个空气孔。定影装置具有第二去泡箱和外壳。气孔将聚集气泡引导到电镀浴主体的外部，以便除去气泡。定影装置可以放入电镀槽主体内的第一个脱泡槽中，形成去气泡区域，并容易地分离，以清洁晶片电镀装置。电镀浴主体还包括用于在进入入口装置之前对电镀液流进行整流的挡板。

4. 发明申请

US20060137974A1 Wafer electroplating apparatus 有权
标题翻译：晶圆电镀设备
公开(公告)号：US20060137974A1
公开(公告)日：2006-06-29
申请号：US11073655
申请日：2005-03-08
申请人： Chen-Chung Du , Jen-Rong Huang , Pang-Ming Chiang , Chih-Yuan Tseng , Muh-Wang Liang , Chih-Cheng Wang , Yi-Chao Weng
发明人： Chen-Chung Du , Jen-Rong Huang , Pang-Ming Chiang , Chih-Yuan Tseng , Muh-Wang Liang , Chih-Cheng Wang , Yi-Chao Weng
IPC分类号： C25B15/08
CPC分类号： C25D21/04 , C25D5/003 , C25D5/08 , C25D7/123 , C25D17/001
摘要： A wafer electroplating apparatus with a function of bubble removal includes an electroplating bath main body and a fixing device. The electroplating bath main body has an inlet device, a first de-bubble tank and at least an air hole. The fixing device has a second de-bubble tank and an outer shell. The air hole guides gathering bubbles to an outside of the electroplating bath main body so as to remove bubbles. The fixing device can be put into the first de-bubble tank within the electroplating bath main body to form a de-bubble area and is separated easily therefrom to clean the wafer electroplating apparatus. The electroplating bath main body further includes a baffle for rectifying electroplating solution flow before entering the inlet device.
摘要翻译：具有除泡功能的晶片电镀装置包括电镀浴主体和定影装置。电镀浴主体具有入口装置，第一去泡箱和至少一个空气孔。定影装置具有第二去泡箱和外壳。气孔将聚集气泡引导到电镀浴主体的外部，以便除去气泡。定影装置可以放入电镀槽主体内的第一个脱泡槽中，形成去气泡区域，并容易地分离，以清洁晶片电镀装置。电镀浴主体还包括用于在进入入口装置之前对电镀液流进行整流的挡板。

5. 发明申请

US20050051023A1 Compress and position apparatus 有权
标题翻译：压缩和定位装置
公开(公告)号：US20050051023A1
公开(公告)日：2005-03-10
申请号：US10764586
申请日：2004-01-27
申请人： Chen-Chung Du , Pang-Ming Chiang , Jen-Rong Huang , Muh-Wang Liang , Yi-Chao Weng
发明人： Chen-Chung Du , Pang-Ming Chiang , Jen-Rong Huang , Muh-Wang Liang , Yi-Chao Weng
IPC分类号： F01B15/00 , F16K17/00 , H01L21/68
CPC分类号： B30B1/38 , B30B15/068
摘要： The present invention relates to a compress and position apparatus with positioning, orientating functions and providing more uniform pressing force compliantly. The compress and position apparatus comprises a guiding column, a base, a housing, a seat, a annular portion and a pressing plate. The base has a cylinder, a plurality of locating pins and a convex portion. The annular portion has a through hole and a plurality of locating holes. The guiding column and the cylinder are disposed in the housing provided with an opening for the guiding column passing therethrough. The housing is mounted on the base and passed through a through hole of the annular portion and disposed in a cavity of the seat. A plane on the housing abuts a plane on the cavity to prevent the rotation of the housing. The guiding column is combined with the seat. The locating pin is inserted into the locating hole. The pressing plate engages the annular portion. Thus the guiding column is moved up and down by the gas supply device. The convex portion biases the pressing plate to exert force on the substrate.
摘要翻译：本发明涉及具有定位，定向功能并且提供更均匀的按压力的压缩和定位装置。压缩和定位装置包括导向柱，基座，壳体，座椅，环形部分和压板。基座具有圆柱体，多个定位销和凸起部分。环形部分具有通孔和多个定位孔。引导柱和圆柱体设置在壳体中，该壳体设置有用于引导柱通过的开口。壳体安装在基座上并穿过环形部分的通孔并设置在座椅的空腔中。壳体上的平面与空腔上的平面抵接以防止壳体旋转。引导柱与座椅结合。定位销插入定位孔。压板与环形部分接合。因此，引导塔由气体供给装置上下移动。凸起部分偏压压板以在基底上施加力。

6. 发明授权

US07021208B2 Compress and position apparatus 有权
标题翻译：压缩和定位装置
公开(公告)号：US07021208B2
公开(公告)日：2006-04-04
申请号：US10764586
申请日：2004-01-27
申请人： Chen-Chung Du , Pang-Ming Chiang , Jen-Rong Huang , Muh-Wang Liang , Yi-Chao Weng
发明人： Chen-Chung Du , Pang-Ming Chiang , Jen-Rong Huang , Muh-Wang Liang , Yi-Chao Weng
IPC分类号： B30B1/32
CPC分类号： B30B1/38 , B30B15/068
摘要： The present invention relates to a compress and position apparatus with positioning, orientating functions and providing more uniform pressing force compliantly. The compress and position apparatus comprises a guiding column, a base, a housing, a seat, a annular portion and a pressing plate. The base has a cylinder, a plurality of locating pins and a convex portion. The annular portion has a through hole and a plurality of locating holes. The guiding column and the cylinder are disposed in the housing provided with an opening for the guiding column passing therethrough. The housing is mounted on the base and passed through a through hole of the annular portion and disposed in a cavity of the seat. A plane on the housing abuts a plane on the cavity to prevent the rotation of the housing. The guiding column is combined with the seat. The locating pin is inserted into the locating hole. The pressing plate engages the annular portion. Thus the guiding column is moved up and down by the gas supply device. The convex portion biases the pressing plate to exert force on the substrate.
摘要翻译：本发明涉及具有定位，定向功能并且提供更均匀的按压力的压缩和定位装置。压缩和定位装置包括导向柱，基座，壳体，座椅，环形部分和压板。基座具有圆柱体，多个定位销和凸起部分。环形部分具有通孔和多个定位孔。引导柱和圆柱体设置在壳体中，该壳体设置有用于引导柱通过的开口。壳体安装在基座上并穿过环形部分的通孔并设置在座椅的空腔中。壳体上的平面与空腔上的平面抵接以防止壳体旋转。引导柱与座椅结合。定位销插入定位孔。压板与环形部分接合。因此，引导塔由气体供给装置上下移动。凸起部分偏压压板以在基底上施加力。

7. 发明申请

US20120070590A1 PLASMA ENHANCED ATOMIC LAYER DEPOSITION APPARATUS AND THE CONTROLLING METHOD THEREOF 审中-公开
标题翻译：等离子体增强原子层沉积装置及其控制方法
公开(公告)号：US20120070590A1
公开(公告)日：2012-03-22
申请号：US12970403
申请日：2010-12-16
申请人： Jen-Rong Huang , Tean-Mu Shen , Kang-Feng Lee , Chin-Chong Chiang , Sheng-Lang Lee , Jung-Chen Ho , Ching-Chiun Wang
发明人： Jen-Rong Huang , Tean-Mu Shen , Kang-Feng Lee , Chin-Chong Chiang , Sheng-Lang Lee , Jung-Chen Ho , Ching-Chiun Wang
IPC分类号： C23C16/448 , C23C16/02
CPC分类号： C23C16/45536 , C23C16/45551
摘要： This prevent disclosure provides a plasma enhanced atomic layer deposition apparatus and the controlling method thereof. The plasma enhanced atomic layer deposition apparatus includes: a plurality of reaction chambers, each of the reaction chambers having a first reaction space and a second reaction space; an adjustable partition unit controlled to separate or communicate the first and the second reaction spaces; and a plurality of heating carriers respectively disposed in the plurality of reaction chambers. The method manipulates the movement of the partition plate, leading to separation or communication between the first and second reaction spaces, so as to avoid the interference or inter-reaction between process gases and the resultant particles contaminating the substrates.
摘要翻译：这种防止公开提供等离子体增强原子层沉积装置及其控制方法。等离子体增强原子层沉积装置包括：多个反应室，每个反应室具有第一反应空间和第二反应空间; 被调节以分离或通信第一和第二反应空间的可调分隔单元; 以及分别设置在多个反应室中的多个加热载体。该方法操纵分隔板的运动，导致第一和第二反应空间之间的分离或连通，以避免处理气体和所得颗粒污染基板之间的干扰或相互作用。

8. 发明授权

US08435803B2 Method for depositing microcrystalline silicon and monitor device of plasma enhanced deposition 有权
标题翻译：沉积微晶硅的方法和等离子体增强沉积监测装置
公开(公告)号：US08435803B2
公开(公告)日：2013-05-07
申请号：US12758698
申请日：2010-04-12
申请人： Chen-Chung Du , Sheng-Lang Lee , Muh-Wang Liang , Jen-Rong Huang , Chia-Hao Chang
发明人： Chen-Chung Du , Sheng-Lang Lee , Muh-Wang Liang , Jen-Rong Huang , Chia-Hao Chang
IPC分类号： H01L21/00
CPC分类号： H01J37/32972 , H01J37/32935 , H01L21/02532 , H01L21/0262
摘要： A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and Hα and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and Hα within an allowed range of a target value for improving film depositing rate.
摘要翻译：公开了一种用于沉积微晶硅膜的方法，包括分别执行开路和闭环等离子体增强沉积工艺，而不需要和调制工艺参数。通过开环等离子体增强沉积工艺沉积膜直到所需的膜结晶度，然后执行监测物质等离子体光谱强度SiH *和Halpha的闭环等离子体增强沉积工艺，并调制等离子体增强沉积过程的工艺参数，物质浓度稳定化，其控制SiH *和Halpha在目标值的允许范围内的强度变化，以提高成膜速率。

9. 发明申请

US20110136269A1 METHOD FOR DEPOSITING MICROCRYSTALLINE SILICON AND MONITOR DEVICE OF PLASMA ENHANCED DEPOSITION 有权
标题翻译：沉积微晶硅的方法和等离子体增强沉积的监测装置
公开(公告)号：US20110136269A1
公开(公告)日：2011-06-09
申请号：US12758698
申请日：2010-04-12
申请人： Chen-Chung Du , Sheng-Lang Lee , Muh-Wang Liang , Jen-Rong Huang , Chia-Hao Chang
发明人： Chen-Chung Du , Sheng-Lang Lee , Muh-Wang Liang , Jen-Rong Huang , Chia-Hao Chang
IPC分类号： H01L21/66 , B05C11/00
CPC分类号： H01J37/32972 , H01J37/32935 , H01L21/02532 , H01L21/0262
摘要： A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and Hα and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and Hα within an allowed range of a target value for improving film depositing rate.
摘要翻译：公开了一种用于沉积微晶硅膜的方法，包括分别执行开路和闭环等离子体增强沉积工艺，而不需要和调制工艺参数。通过开环等离子体增强沉积工艺沉积膜直到所需的膜结晶度，然后执行监测物质等离子体光谱强度SiH *和Hα的闭环等离子体增强沉积过程，并调制等离子体增强沉积过程的工艺参数，从而导致物质浓度稳定化，其控制在目标值的允许范围内的SiH *和Hα的强度变化，以提高成膜速率。

10. 发明授权

US06390394B1 Nozzle and adjust module 失效
标题翻译：喷嘴和调整模块
公开(公告)号：US06390394B1
公开(公告)日：2002-05-21
申请号：US09727494
申请日：2000-12-04
申请人： Fu-Ching Tung , Chia-Ming Chen , Jen-Rong Huang , Jonathan Wang , Peter L. Mahneke
发明人： Fu-Ching Tung , Chia-Ming Chen , Jen-Rong Huang , Jonathan Wang , Peter L. Mahneke
IPC分类号： B05B1508
CPC分类号： H01L21/6708 , B05B12/1472 , B05B15/654 , B05B15/68 , B05C11/08
摘要： The present invention relates to a nozzle and adjust module of chemicals when wafers are processed during the IC manufacturing process. After wafers are loaded on a chuck of a reaction chamber, five chemicals required for the manufacturing process are transported into the passages, and are sprayed on the surfaces of rotating wafers via different nozzles. The centrifugal effect due to the rotation of a main motor is exploited to coat the chemicals on the whole wafer quickly and uniformly. The present invention can apply to both closed and open reaction chambers. The spray head of the present invention has a specially designed angle, and has level adjusting and height adjusting functions so that high flexibility in the manufacturing process can be obtained.
摘要翻译：本发明涉及在IC制造过程中处理晶片时的化学品的喷嘴和调节模块。在将晶片装载在反应室的卡盘上之后，将制造过程所需的五种化学品输送到通道中，并通过不同的喷嘴喷射在旋转晶片的表面上。利用主电机的旋转引起的离心效应被快速且均匀地涂覆在整个晶片上的化学物质。本发明可应用于封闭和开放的反应室。本发明的喷头具有特别设计的角度，具有水平调节和高度调节功能，从而可以获得制造过程中的高柔性。

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