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    • 10. 发明授权
    • Method to generate porous organic dielectric
    • 生成多孔有机电介质的方法
    • US07101784B2
    • 2006-09-05
    • US11125549
    • 2005-05-10
    • Lawrence A. ClevengerStephen E. GrecoKeith T. KwietniakSoon-Cheon SeoChih-Chao YangYun-Yu WangKwong H. Wong
    • Lawrence A. ClevengerStephen E. GrecoKeith T. KwietniakSoon-Cheon SeoChih-Chao YangYun-Yu WangKwong H. Wong
    • H01L21/4763
    • H01L21/76843H01L21/76807H01L21/76814H01L21/7682H01L21/76826H01L21/76835H01L21/76856H01L2221/1036
    • The invention provides a method of forming a wiring layer in an integrated circuit structure that forms an organic insulator, patterns the insulator, deposits a liner on the insulator, and exposes the structure to a plasma to form pores in the insulator in regions next to the liner. The liner is formed thin enough to allow the plasma to pass through the liner and form the pores in the insulator. During the plasma processing, the plasma passes through the liner without affecting the liner. After the plasma processing, additional liner material may be deposited. After this, a conductor is deposited and excess of portions of the conductor are removed from the structure such that the conductor only remains within patterned portions of the insulator. This method produces an integrated circuit structure that has an organic insulator having patterned features, a liner lining the patterned features, and a conductor filling the patterned features. The insulator includes pores along surface areas of the insulator that are in contact with the liner and the pores exist only along the surface areas that are in contact with the liner (the liner is not within the pores).
    • 本发明提供一种形成集成电路结构中的布线层的方法,该集成电路结构形成有机绝缘体,图案化绝缘体,将衬垫沉积在绝缘体上,并将该结构暴露于等离子体,以在绝缘体旁边的区域中形成孔 衬垫。 衬垫形成得足够薄以允许等离子体穿过衬垫并在绝缘体中形成孔。 在等离子体处理期间,等离子体通过衬垫而不影响衬垫。 在等离子体处理之后,可以沉积另外的衬里材料。 此后,导体被沉积,导体的多余部分从结构中移除,使得导体仅保留在绝缘体的图案化部分内。 该方法产生集成电路结构,其具有具有图案化特征的有机绝缘体,衬里图案化特征的衬垫和填充图案化特征的导体。 绝缘体包括与绝缘体的表面区域相接触的孔,该孔与衬垫接触,并且孔仅沿着与衬垫接触的表面区域(衬里不在孔内)存在。