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1. 发明授权

US06916729B2 Salicide formation method 有权
标题翻译：自杀剂形成方法
公开(公告)号：US06916729B2
公开(公告)日：2005-07-12
申请号：US10409516
申请日：2003-04-08
申请人： Sunfei Fang , Keith Kwong Hon Wong , Paul D. Agnello , Christian Lavoie , Lawrence A. Clevenger , Chester T. Dziobkowski , Richard J. Murphy , Patrick W. DeHaven , Nivo Rovedo , Hsiang-Jen Huang
发明人： Sunfei Fang , Keith Kwong Hon Wong , Paul D. Agnello , Christian Lavoie , Lawrence A. Clevenger , Chester T. Dziobkowski , Richard J. Murphy , Patrick W. DeHaven , Nivo Rovedo , Hsiang-Jen Huang
IPC分类号： H01L21/28 , H01L21/283 , H01L21/285 , H01L21/3205 , H01L21/321 , H01L21/336 , H01L21/44 , H01L21/4763 , H01L21/8238 , H01L27/092 , H01L29/78
CPC分类号： H01L29/665 , H01L21/28052 , H01L21/28518
摘要： A method of forming a salicide on a semiconductor device includes depositing a first refractory metal layer over a silicon region of a substrate, depositing a near-noble metal layer over the first refractory metal layer, and depositing a second refractory metal layer over the near-noble metal layer. The semiconductor device is annealed in a first annealing process to form a silicide layer abutting the doped region of the semiconductor device. Un-reacted portions of the near-noble metal layer and the second refractory metal layer are removed. The device may be annealed in an optional second annealing process to convert the silicide layer to a low resistance phase silicide material. Junction leakage and bridging are minimized or eliminated by embodiments of the present invention, and a smoother silicided surface is achieved.
摘要翻译：在半导体器件上形成硅化物的方法包括在衬底的硅区域上沉积第一难熔金属层，在第一耐火金属层上沉积近贵金属层，以及在第二耐火金属层的近旁沉积第二难熔金属层，贵金属层。半导体器件在第一退火工艺中退火以形成邻接半导体器件的掺杂区域的硅化物层。除去近贵金属层和第二难熔金属层的未反应部分。该器件可以在任选的第二退火工艺中进行退火，以将硅化物层转换成低电阻相位硅化物材料。通过本发明的实施例使结漏电和桥接最小化或消除，并且实现更平滑的硅化表面。

2. 发明授权

US07820559B2 Structure to improve adhesion between top CVD low-K dielectric and dielectric capping layer 有权
标题翻译：用于改善顶部CVD低K电介质和介电顶盖层之间粘合的结构
公开(公告)号：US07820559B2
公开(公告)日：2010-10-26
申请号：US12143917
申请日：2008-06-23
申请人： Lawrence A. Clevenger , Stefanie R. Chiras , Timothy Dalton , James J. Demarest , Darren N. Dunn , Chester T. Dziobkowski , Philip L. Flaitz , Michael W. Lane , James R. Lloyd , Darryl D. Restaino , Thomas M. Shaw , Yun-Yu Wang , Chih-Chao Yang
发明人： Lawrence A. Clevenger , Stefanie R. Chiras , Timothy Dalton , James J. Demarest , Darren N. Dunn , Chester T. Dziobkowski , Philip L. Flaitz , Michael W. Lane , James R. Lloyd , Darryl D. Restaino , Thomas M. Shaw , Yun-Yu Wang , Chih-Chao Yang
IPC分类号： H01L21/31 , H01L21/4763
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02315 , H01L21/02362 , H01L21/31633 , H01L21/76826 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhesion transition layer between the two dielectric layers. The presence of the adhesion transition layer between the upper level low-k dielectric and the diffusion barrier capping dielectric can reduce the chance of delamination of the interconnect structure during the packaging process. The adhesion transition layer provided herein includes a lower SiOx— or SiON-containing region and an upper C graded region. Methods of forming such a structure, in particularly the adhesion transition layer, are also provided.
摘要翻译：一种互连结构，其中上层低k介电材料（例如包含Si，C，O和H的元素的材料）与下面的扩散覆盖电介质（例如包含C，Si元素的材料）之间的粘合通过在两个电介质层之间引入粘附过渡层来改善N和H。在上层低k电介质和扩散阻挡覆盖电介质之间的粘附过渡层的存在可以减少在包装过程中互连结构的分层的可能性。本文提供的粘附过渡层包括下部含SiO x或SiON的区域和上部C分级区域。还提供了形成这种结构，特别是粘附过渡层的方法。

3. 发明授权

US07223691B2 Method of forming low resistance and reliable via in inter-level dielectric interconnect 有权
标题翻译：在层间电介质互连中形成低电阻和可靠通孔的方法
公开(公告)号：US07223691B2
公开(公告)日：2007-05-29
申请号：US10965031
申请日：2004-10-14
申请人： Cyril Cabral, Jr. , Lawrence A. Clevenger , Timothy J. Dalton , Patrick W. DeHaven , Chester T. Dziobkowski , Sunfei Fang , Terry A. Spooner , Tsong-Lin L. Tai , Kwong Hon Wong , Chin-Chao Yang
发明人： Cyril Cabral, Jr. , Lawrence A. Clevenger , Timothy J. Dalton , Patrick W. DeHaven , Chester T. Dziobkowski , Sunfei Fang , Terry A. Spooner , Tsong-Lin L. Tai , Kwong Hon Wong , Chin-Chao Yang
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/76849 , H01L21/76867 , H01L21/76888
摘要： A novel interlevel contact via structure having low contact resistance and improved reliability, and method of forming the contact via. The method comprises steps of: etching an opening through an interlevel dielectric layer to expose an underlying metal (Copper) layer surface; and, performing a low energy ion implant of an inert gas (Nitrogen) into the exposed metal underneath; and, depositing a refractory liner into the walls and bottom via structure which will have a lower contact resistance due to the presence of the proceeding inert gas implantation. Preferably, the inert Nitrogen gas reacts with the underlying exposed Copper metal to form a thin layer of CuN.
摘要翻译：具有低接触电阻和改进的可靠性的新颖的层间接触通孔结构以及形成接触通孔的方法。该方法包括以下步骤：通过层间电介质层蚀刻开口以暴露下面的金属（铜）层表面; 并且将惰性气体（氮气）的低能量离子注入进入下面暴露的金属; 并且将耐火衬垫沉积到壁和底部通孔结构中，由于进行的惰性气体注入的存在而将具有较低的接触电阻。优选地，惰性氮气与下面暴露的铜金属反应形成一层薄的CuN。

4. 发明申请

US20090181544A1 METHOD FOR PREVENTING BACKSIDE DEFECTS IN DIELECTRIC LAYERS FORMED ON SEMICONDUCTOR SUBSTRATES 有权
标题翻译：用于防止在半导体衬底上形成的电介质层中的背面缺陷的方法
公开(公告)号：US20090181544A1
公开(公告)日：2009-07-16
申请号：US11972895
申请日：2008-01-11
申请人： Chester T. Dziobkowski , Thomas F. Houghton , Emily Kinser , Darryl D. Restaino , Yun-Yu Wang
发明人： Chester T. Dziobkowski , Thomas F. Houghton , Emily Kinser , Darryl D. Restaino , Yun-Yu Wang
IPC分类号： H01L21/311
CPC分类号： H01L21/31612 , C23C16/325 , C23C16/505 , C23C16/56 , H01L21/02131 , H01L21/02164 , H01L21/02274 , H01L21/02304 , H01L21/3145 , H01L21/3148 , H01L21/31629
摘要： A method of forming a TEOS oxide layer over an nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide layer formed on a substrate. The method includes forming the nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide layer on a top surface and a top side beveled edge proximate to the top surface of a substrate; removing or preventing formation of a carbon-rich layer on a bottom side bevel edge region proximate to a bottom surface of the substrate or converting the carbon-rich layer to nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide; and forming the TEOS oxide layer on the top surface, the top side beveled edge and the bottom side bevel edge region of the substrate.
摘要翻译：在形成在衬底上的氮掺杂碳化硅或氮掺杂氢化碳化硅层上形成TEOS氧化物层的方法。该方法包括在靠近衬底顶表面的顶表面和顶侧倾斜边缘上形成氮掺杂碳化硅或氮掺杂氢化碳化硅层; 去除或阻止在靠近基底的底表面的底侧斜边缘区域上形成富碳层，或将富碳层转化为氮掺杂碳化硅或氮掺杂氢化碳化硅; 以及在所述基板的顶面，顶侧倾斜边缘和底侧斜边缘区域上形成TEOS氧化物层。

5. 发明授权

US07112481B2 Method for forming self-aligned dual salicide in CMOS technologies 失效
标题翻译：在CMOS技术中形成自对准双重自杀机的方法
公开(公告)号：US07112481B2
公开(公告)日：2006-09-26
申请号：US11254929
申请日：2005-10-20
申请人： Sunfei Fang , Cyril Cabral, Jr. , Chester T. Dziobkowski , John J. Ellis-Monaghan , Christian Lavoie , Zhijiong Luo , James S. Nakos , An L. Steegen , Clement H. Wann
发明人： Sunfei Fang , Cyril Cabral, Jr. , Chester T. Dziobkowski , John J. Ellis-Monaghan , Christian Lavoie , Zhijiong Luo , James S. Nakos , An L. Steegen , Clement H. Wann
IPC分类号： H01L21/8238
CPC分类号： H01L21/28518 , H01L21/823814 , H01L21/823835
摘要： A method of fabricating a complementary metal oxide semiconductor (CMOS) device, wherein the method comprises forming a first well region in a semiconductor substrate for accommodation of a first type semiconductor device; forming a second well region in the semiconductor substrate for accommodation of a second type semiconductor device; shielding the first type semiconductor device with a mask; depositing a first metal layer over the second type semiconductor device; performing a first salicide formation on the second type semiconductor device; removing the mask; depositing a second metal layer over the first and second type semiconductor devices; and performing a second salicide formation on the first type semiconductor device. The method requires only one pattern level and it eliminates pattern overlay as it also simplifies the processes to form different silicide material over different devices.
摘要翻译：一种制造互补金属氧化物半导体（CMOS）器件的方法，其中所述方法包括在用于容纳第一类型半导体器件的半导体衬底中形成第一阱区; 在所述半导体衬底中形成用于容纳第二类型半导体器件的第二阱区; 用掩模屏蔽第一类型半导体器件; 在所述第二类型半导体器件上沉积第一金属层; 在所述第二类型半导体器件上执行第一自对准硅化物形成; 去除面膜; 在所述第一和第二类型半导体器件上沉积第二金属层; 以及在所述第一类型半导体器件上执行第二自对准硅化物形成。该方法仅需要一个图案级别，并且消除图案覆盖，因为它也简化了在不同设备上形成不同硅化物材料的工艺。

6. 发明授权

US07067368B1 Method for forming self-aligned dual salicide in CMOS technologies 有权
公开(公告)号：US07067368B1
公开(公告)日：2006-06-27
申请号：US11254934
申请日：2005-10-20
申请人： Sunfei Fang , Cyril Cabral, Jr. , Chester T. Dziobkowski , John J. Ellis-Monaghan , Christian Lavoie , Zhijiong Luo , James S. Nakos , An L. Steegen , Clement H. Wann
发明人： Sunfei Fang , Cyril Cabral, Jr. , Chester T. Dziobkowski , John J. Ellis-Monaghan , Christian Lavoie , Zhijiong Luo , James S. Nakos , An L. Steegen , Clement H. Wann
IPC分类号： H01L21/8238
CPC分类号： H01L21/28518 , H01L21/823814 , H01L21/823835
摘要： A method of fabricating a complementary metal oxide semiconductor (CMOS) device, wherein the method comprises forming a first well region in a semiconductor substrate for accommodation of a first type semiconductor device; forming a second well region in the semiconductor substrate for accommodation of a second type semiconductor device; shielding the first type semiconductor device with a mask; depositing a first metal layer over the second type semiconductor device; performing a first salicide formation on the second type semiconductor device; removing the mask; depositing a second metal layer over the first and second type semiconductor devices; and performing a second salicide formation on the first type semiconductor device. The method requires only one pattern level and it eliminates pattern overlay as it also simplifies the processes to form different silicide material over different devices.

7. 发明授权

US07064025B1 Method for forming self-aligned dual salicide in CMOS technologies 有权
公开(公告)号：US07064025B1
公开(公告)日：2006-06-20
申请号：US10904884
申请日：2004-12-02
申请人： Sunfei Fang , Cyril Cabral, Jr. , Chester T. Dziobkowski , John J. Ellis-Monaghan , Christian Lavoie , Zhijiong Luo , James S. Nakos , An L. Steegen , Clement H. Wann
发明人： Sunfei Fang , Cyril Cabral, Jr. , Chester T. Dziobkowski , John J. Ellis-Monaghan , Christian Lavoie , Zhijiong Luo , James S. Nakos , An L. Steegen , Clement H. Wann
IPC分类号： H01L21/8238
CPC分类号： H01L21/28518 , H01L21/823814 , H01L21/823835
摘要： A method of fabricating a complementary metal oxide semiconductor (CMOS) device, wherein the method comprises forming a first well region in a semiconductor substrate for accommodation of a first type semiconductor device; forming a second well region in the semiconductor substrate for accommodation of a second type semiconductor device; shielding the first type semiconductor device with a mask; depositing a first metal layer over the second type semiconductor device; performing a first salicide formation on the second type semiconductor device; removing the mask; depositing a second metal layer over the first and second type semiconductor devices; and performing a second salicide formation on the first type semiconductor device. The method requires only one pattern level and it eliminates pattern overlay as it also simplifies the processes to form different silicide material over different devices.

8. 发明授权

US07785999B2 Formation of fully silicided metal gate using dual self-aligned silicide process 失效
标题翻译：使用双自对准硅化物工艺形成完全硅化金属栅极
公开(公告)号：US07785999B2
公开(公告)日：2010-08-31
申请号：US11830277
申请日：2007-07-30
申请人： Cyril Cabral, Jr. , Chester T. Dziobkowski , Sunfei Fang , Evgeni Gousev , Rajarao Jammy , Vijay Narayanan , Vamsi Paruchuri , Ghavam G. Shahidi , Michelle L. Steen , Clement H. Wann
发明人： Cyril Cabral, Jr. , Chester T. Dziobkowski , Sunfei Fang , Evgeni Gousev , Rajarao Jammy , Vijay Narayanan , Vamsi Paruchuri , Ghavam G. Shahidi , Michelle L. Steen , Clement H. Wann
IPC分类号： H01L21/44 , H01L21/8242
CPC分类号： H01L29/66507 , H01L21/28097 , H01L21/823443 , H01L29/66545
摘要： An advanced gate structure that includes a fully silicided metal gate and silicided source and drain regions in which the fully silicided metal gate has a thickness that is greater than the thickness of the silicided source/drain regions is provided. A method of forming the advanced gate structure is also provided in which the silicided source and drain regions are formed prior to formation of the silicided metal gate region.
摘要翻译：提供了一种先进的栅极结构，其包括完全硅化金属栅极和硅化物源极和漏极区域，其中完全硅化金属栅极的厚度大于硅化物源极/漏极区域的厚度。还提供了形成高级栅极结构的方法，其中在形成硅化金属栅极区之前形成硅化源极和漏极区。

9. 发明授权

US07271455B2 Formation of fully silicided metal gate using dual self-aligned silicide process 失效
标题翻译：使用双自对准硅化物工艺形成完全硅化金属栅极
公开(公告)号：US07271455B2
公开(公告)日：2007-09-18
申请号：US10890753
申请日：2004-07-14
申请人： Cyril Cabral, Jr. , Chester T. Dziobkowski , Sunfei Fang , Evgeni Gousev , Rajarao Jammy , Vijay Narayanan , Vamsi Paruchuri , Ghavam G. Shahidi , Michelle L. Steen , Clement H. Wann
发明人： Cyril Cabral, Jr. , Chester T. Dziobkowski , Sunfei Fang , Evgeni Gousev , Rajarao Jammy , Vijay Narayanan , Vamsi Paruchuri , Ghavam G. Shahidi , Michelle L. Steen , Clement H. Wann
IPC分类号： H01L21/336 , H01L29/76
CPC分类号： H01L29/66507 , H01L21/28097 , H01L21/823443 , H01L29/66545
摘要： An advanced gate structure that includes a fully silicided metal gate and silicided source and drain regions in which the fully silicided metal gate has a thickness that is greater than the thickness of the silicided source/drain regions is provided. A method of forming the advanced gate structure is also provided in which the silicided source and drain regions are formed prior to formation of the silicided metal gate region.
摘要翻译：提供了一种先进的栅极结构，其包括完全硅化金属栅极和硅化物源极和漏极区域，其中完全硅化金属栅极的厚度大于硅化物源极/漏极区域的厚度。还提供了形成高级栅极结构的方法，其中在形成硅化金属栅极区之前形成硅化源极和漏极区。

10. 发明授权

US07122472B2 Method for forming self-aligned dual fully silicided gates in CMOS devices 失效
标题翻译：在CMOS器件中形成自对准双完全硅化栅的方法
公开(公告)号：US07122472B2
公开(公告)日：2006-10-17
申请号：US10904885
申请日：2004-12-02
申请人： Sunfei Fang , Cyril Cabral, Jr. , Chester T. Dziobkowski , Christian Lavoie , Clement H. Wann
发明人： Sunfei Fang , Cyril Cabral, Jr. , Chester T. Dziobkowski , Christian Lavoie , Clement H. Wann
IPC分类号： H01L21/44
CPC分类号： H01L21/823835
摘要： A method of forming a dual self-aligned fully silicided gate in a CMOS device requiring only one lithography level, wherein the method comprises forming a first type semiconductor device having a first well region in a semiconductor substrate, first source/drain silicide areas in the first well region, and a first type gate isolated from the first source/drain silicide areas; forming a second type semiconductor device having a second well region in the semiconductor substrate, second source/drain silicide areas in the second well region, and a second type gate isolated from the second source/drain silicide areas; selectively forming a first metal layer over the second type semiconductor device; performing a first fully silicided (FUSI) gate formation on only the second type gate; depositing a second metal layer over the first and second type semiconductor devices; and performing a second FUSI gate formation on only the first type gate.
摘要翻译：一种在仅需要一个光刻级别的CMOS器件中形成双自对准全硅化栅的方法，其中所述方法包括在半导体衬底中形成具有第一阱区的第一类型半导体器件，其中第一源极/漏极硅化物区域第一阱区域和从第一源极/漏极硅化物区域隔离的第一类型栅极; 形成在所述半导体衬底中具有第二阱区域的第二类型半导体器件，所述第二阱区域中的第二源极/漏极硅化物区域和与所述第二源极/漏极硅化物区域隔离的第二类型栅极; 在所述第二类型半导体器件上选择性地形成第一金属层; 仅在第二型栅极上执行第一完全硅化（FUSI）栅极形成; 在所述第一和第二类型半导体器件上沉积第二金属层; 以及仅在第一类型栅极上执行第二FUSI栅极形成。

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