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    • 10. 发明授权
    • Method for forming self-aligned dual fully silicided gates in CMOS devices
    • 在CMOS器件中形成自对准双完全硅化栅的方法
    • US07122472B2
    • 2006-10-17
    • US10904885
    • 2004-12-02
    • Sunfei FangCyril Cabral, Jr.Chester T. DziobkowskiChristian LavoieClement H. Wann
    • Sunfei FangCyril Cabral, Jr.Chester T. DziobkowskiChristian LavoieClement H. Wann
    • H01L21/44
    • H01L21/823835
    • A method of forming a dual self-aligned fully silicided gate in a CMOS device requiring only one lithography level, wherein the method comprises forming a first type semiconductor device having a first well region in a semiconductor substrate, first source/drain silicide areas in the first well region, and a first type gate isolated from the first source/drain silicide areas; forming a second type semiconductor device having a second well region in the semiconductor substrate, second source/drain silicide areas in the second well region, and a second type gate isolated from the second source/drain silicide areas; selectively forming a first metal layer over the second type semiconductor device; performing a first fully silicided (FUSI) gate formation on only the second type gate; depositing a second metal layer over the first and second type semiconductor devices; and performing a second FUSI gate formation on only the first type gate.
    • 一种在仅需要一个光刻级别的CMOS器件中形成双自对准全硅化栅的方法,其中所述方法包括在半导体衬底中形成具有第一阱区的第一类型半导体器件,其中第一源极/漏极硅化物区域 第一阱区域和从第一源极/漏极硅化物区域隔离的第一类型栅极; 形成在所述半导体衬底中具有第二阱区域的第二类型半导体器件,所述第二阱区域中的第二源极/漏极硅化物区域和与所述第二源极/漏极硅化物区域隔离的第二类型栅极; 在所述第二类型半导体器件上选择性地形成第一金属层; 仅在第二型栅极上执行第一完全硅化(FUSI)栅极形成; 在所述第一和第二类型半导体器件上沉积第二金属层; 以及仅在第一类型栅极上执行第二FUSI栅极形成。