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1. 发明授权

US07820559B2 Structure to improve adhesion between top CVD low-K dielectric and dielectric capping layer 有权
标题翻译：用于改善顶部CVD低K电介质和介电顶盖层之间粘合的结构
公开(公告)号：US07820559B2
公开(公告)日：2010-10-26
申请号：US12143917
申请日：2008-06-23
申请人： Lawrence A. Clevenger , Stefanie R. Chiras , Timothy Dalton , James J. Demarest , Darren N. Dunn , Chester T. Dziobkowski , Philip L. Flaitz , Michael W. Lane , James R. Lloyd , Darryl D. Restaino , Thomas M. Shaw , Yun-Yu Wang , Chih-Chao Yang
发明人： Lawrence A. Clevenger , Stefanie R. Chiras , Timothy Dalton , James J. Demarest , Darren N. Dunn , Chester T. Dziobkowski , Philip L. Flaitz , Michael W. Lane , James R. Lloyd , Darryl D. Restaino , Thomas M. Shaw , Yun-Yu Wang , Chih-Chao Yang
IPC分类号： H01L21/31 , H01L21/4763
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02315 , H01L21/02362 , H01L21/31633 , H01L21/76826 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhesion transition layer between the two dielectric layers. The presence of the adhesion transition layer between the upper level low-k dielectric and the diffusion barrier capping dielectric can reduce the chance of delamination of the interconnect structure during the packaging process. The adhesion transition layer provided herein includes a lower SiOx— or SiON-containing region and an upper C graded region. Methods of forming such a structure, in particularly the adhesion transition layer, are also provided.
摘要翻译：一种互连结构，其中上层低k介电材料（例如包含Si，C，O和H的元素的材料）与下面的扩散覆盖电介质（例如包含C，Si元素的材料）之间的粘合通过在两个电介质层之间引入粘附过渡层来改善N和H。在上层低k电介质和扩散阻挡覆盖电介质之间的粘附过渡层的存在可以减少在包装过程中互连结构的分层的可能性。本文提供的粘附过渡层包括下部含SiO x或SiON的区域和上部C分级区域。还提供了形成这种结构，特别是粘附过渡层的方法。

2. 发明申请

US20080254643A1 STRUCTURE TO IMPROVE ADHESION BETWEEN TOP CVD LOW-K DIELECTRIC AND DIELECTRIC CAPPING LAYER 有权
标题翻译：结构提高顶级CVD低K电介质和介电吸收层之间的粘合力
公开(公告)号：US20080254643A1
公开(公告)日：2008-10-16
申请号：US12143917
申请日：2008-06-23
申请人： Lawrence A. Clevenger , Stefanie R. Chiras , Timothy Dalton , James J. Demarest , Darren N. Dunn , Chester T. Dziobkowski , Philip L. Flaitz , Michael W. Lane , James R. Lloyd , Darryl D. Restaino , Thomas M. Shaw , Yun-Yu Wang , Chih-Chao Yang
发明人： Lawrence A. Clevenger , Stefanie R. Chiras , Timothy Dalton , James J. Demarest , Darren N. Dunn , Chester T. Dziobkowski , Philip L. Flaitz , Michael W. Lane , James R. Lloyd , Darryl D. Restaino , Thomas M. Shaw , Yun-Yu Wang , Chih-Chao Yang
IPC分类号： H01L21/768
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02315 , H01L21/02362 , H01L21/31633 , H01L21/76826 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhesion transition layer between the two dielectric layers. The presence of the adhesion transition layer between the upper level low-k dielectric and the diffusion barrier capping dielectric can reduce the chance of delamination of the interconnect structure during the packaging process. The adhesion transition layer provided herein includes a lower SiOx- or SiON-containing region and an upper C graded region. Methods of forming such a structure, in particularly the adhesion transition layer, are also provided.
摘要翻译：一种互连结构，其中上层低k介电材料（例如包含Si，C，O和H的元素的材料）与下面的扩散覆盖电介质（例如包含C，Si元素的材料）之间的粘合通过在两个电介质层之间引入粘附过渡层来改善N和H。在上层低k电介质和扩散阻挡覆盖电介质之间的粘附过渡层的存在可以减少在包装过程中互连结构的分层的可能性。本文提供的粘合过渡层包括含低级SiO x - 或SiON的区域和上C级分区域。还提供了形成这种结构，特别是粘附过渡层的方法。

3. 发明授权

US07102232B2 Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer 有权
标题翻译：结构以改善顶部CVD低介电常数介电层和电介质顶盖层之间的附着力
公开(公告)号：US07102232B2
公开(公告)日：2006-09-05
申请号：US10827693
申请日：2004-04-19
申请人： Lawrence A. Clevenger , Stefanie R. Chiras , Timothy Dalton , James J. Demarest , Derren N. Dunn , Chester T. Dziobkowski , Philip L. Flaitz , Michael W. Lane , James R. Lloyd , Darryl D. Restaino , Thomas M. Shaw , Yun-Yu Wang , Chih-Chao Yang
发明人： Lawrence A. Clevenger , Stefanie R. Chiras , Timothy Dalton , James J. Demarest , Derren N. Dunn , Chester T. Dziobkowski , Philip L. Flaitz , Michael W. Lane , James R. Lloyd , Darryl D. Restaino , Thomas M. Shaw , Yun-Yu Wang , Chih-Chao Yang
IPC分类号： H01L23/52
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02315 , H01L21/02362 , H01L21/31633 , H01L21/76826 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhesion transition layer between the two dielectric layers. The presence of the adhesion transition layer between the upper level low-k dielectric and the diffusion barrier capping dielectric can reduce the chance of delamination of the interconnect structure during the packaging process. The adhesion transition layer provided herein includes a lower SiOx— or SiON-containing region and an upper C graded region. Methods of forming such a structure, in particularly the adhesion transition layer, are also provided.
摘要翻译：一种互连结构，其中上层低k介电材料（例如包含Si，C，O和H的元素的材料）与下面的扩散覆盖电介质（例如包含C，Si元素的材料）之间的粘合通过在两个电介质层之间引入粘附过渡层来改善N和H。在上层低k电介质和扩散阻挡覆盖电介质之间的粘附过渡层的存在可以减少在包装过程中互连结构的分层的可能性。本文提供的粘合过渡层包括含低级SiO x - 或SiON的区域和上C级分区域。还提供了形成这种结构，特别是粘附过渡层的方法。

4. 发明授权

US07402532B2 Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer 有权
标题翻译：结构以改善顶部CVD低介电常数介电层和电介质顶盖层之间的附着力
公开(公告)号：US07402532B2
公开(公告)日：2008-07-22
申请号：US11499220
申请日：2006-08-04
申请人： Lawrence A. Clevenger , Stefanie R. Chiras , Timothy Dalton , James J. Demarest , Derren N. Dunn , Chester T. Dziobkowski , Philip L. Flaitz , Michael W. Lane , James R. Lloyd , Darryl D. Restaino , Thomas M. Shaw , Yun-Yu Wang , Chih-Chao Yang
发明人： Lawrence A. Clevenger , Stefanie R. Chiras , Timothy Dalton , James J. Demarest , Derren N. Dunn , Chester T. Dziobkowski , Philip L. Flaitz , Michael W. Lane , James R. Lloyd , Darryl D. Restaino , Thomas M. Shaw , Yun-Yu Wang , Chih-Chao Yang
IPC分类号： H01L23/48
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02315 , H01L21/02362 , H01L21/31633 , H01L21/76826 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhesion transition layer between the two dielectric layers. The presence of the adhesion transition layer between the upper level low-k dielectric and the diffusion barrier capping dielectric can reduce the chance of delamination of the interconnect structure during the packaging process. The adhesion transition layer provided herein includes a lower SiOx- or SiON-containing region and an upper C graded region. Methods of forming such a structure, in particularly the adhesion transition layer, are also provided.
摘要翻译：一种互连结构，其中上层低k介电材料（例如包含Si，C，O和H的元素的材料）与下面的扩散覆盖电介质（例如包含C，Si元素的材料）之间的粘合通过在两个电介质层之间引入粘附过渡层来改善N和H。在上层低k电介质和扩散阻挡覆盖电介质之间的粘附过渡层的存在可以减少在包装过程中互连结构的分层的可能性。本文提供的粘合过渡层包括含低级SiO x - 或SiON的区域和上C级分区域。还提供了形成这种结构，特别是粘附过渡层的方法。

5. 发明授权

US09750349B1 Articulated frame that supports mosquito netting over a bed 有权
公开(公告)号：US09750349B1
公开(公告)日：2017-09-05
申请号：US15344731
申请日：2016-11-07
申请人： James R. Lloyd
发明人： James R. Lloyd
IPC分类号： A47C29/00 , A47C21/02
CPC分类号： A47C29/006 , A47C21/024 , A47C29/00 , A47C29/003
摘要： This invention provides protection from mosquitoes for an individual lying on a bed. An articulated frame supports mosquito netting over the exposed flesh of the individual. The articulated frame is easily deployed and retracted by the individual while lying on the bed. In the retracted position the bed is fully accessible for making-up or changing the bedding.

6. 发明授权

US06261291B1 Orthopedic implant assembly 有权
标题翻译：矫形植入组件
公开(公告)号：US06261291B1
公开(公告)日：2001-07-17
申请号：US09349519
申请日：1999-07-08
申请人： David J. Talaber , James R. Lloyd
发明人： David J. Talaber , James R. Lloyd
IPC分类号： A61B1770
CPC分类号： A61B17/8042 , A61B17/7059 , A61B17/80 , A61B17/8052 , A61B17/8605 , A61F2002/30497 , A61F2220/0025
摘要： An orthopedic implant assembly comprising a stabilizing element, a securing element which attaches the stabilizing element to the bone, and a stopping member in the stabilizing element which inhibits the securing element from loosening or backing out of the bone. The stabilizing element has at least one bore with the stopping member therein. In one embodiment, the stopping member has a reversibly expandable inner and outer diameter to allow the securing element to pass posteriorly through the stopping member, but thereafter prevent or inhibit the securing element from anteriorly backing out of the posterior section of the transverse passageway. In another embodiment, the stopping member is secured to an anterior section of the transverse passageway, and the head of the securing element generally has a compressed configuration with a diameter less than the diameter of the stopping member, in which configuration the head can pass through the stopping member, and an uncompressed configuration with a diameter larger than the diameter of the stopping member.
摘要翻译：一种矫形植入物组件，包括稳定元件，将稳定元件附接到骨头上的固定元件以及稳定元件中的止动构件，其阻止固定元件松动或退出骨骼。稳定元件具有至少一个具有止动构件的孔。在一个实施例中，止动构件具有可逆地扩张的内部和外部直径，以允许固定元件向后通过止动构件，然后防止或阻止固定元件从横向通道的后部的前部背面离开。在另一个实施例中，止动构件固定到横向通道的前部，并且固定元件的头部通常具有直径小于止动构件的直径的压缩构造，头部可以穿过该构件的直径止动构件和直径大于止动构件的直径的未压缩构造。

7. 发明授权

US4962294A Method and apparatus for causing an open circuit in a conductive line 失效
标题翻译：在导线中导致开路的方法和装置
公开(公告)号：US4962294A
公开(公告)日：1990-10-09
申请号：US322955
申请日：1989-03-14
申请人： Keith F. Beckham , David C. Challener , Arunava Gupta , Joseph M. Harvilchuck , James M. Leas , James R. Lloyd , David C. Long , Horatio Quinones , Krishna Seshan , Morris Shatzkes
发明人： Keith F. Beckham , David C. Challener , Arunava Gupta , Joseph M. Harvilchuck , James M. Leas , James R. Lloyd , David C. Long , Horatio Quinones , Krishna Seshan , Morris Shatzkes
IPC分类号： B23K26/00 , H01L21/3205 , H01L21/82 , H01L23/52 , H01L23/525 , H05K3/22
CPC分类号： H01L23/5256 , H01L2924/0002
摘要： A method for causing an open circuit in an electrical conductor is provided, including the steps of: conducting a direct current through the conductor; and applying heat at a selected location on the conductor whereat it is desired to cause the open circuit of the conductor.

8. 再颁专利

USRE43008E1 Orthopedic implant assembly 有权
标题翻译：矫形植入组件
公开(公告)号：USRE43008E1
公开(公告)日：2011-12-06
申请号：US10620154
申请日：2003-07-15
申请人： David J. Talaber , James R. Lloyd
发明人： David J. Talaber , James R. Lloyd
IPC分类号： A61B17/80
CPC分类号： A61B17/8042 , A61B17/7059 , A61B17/80 , A61B17/8052 , A61B17/8605 , A61F2002/30497 , A61F2220/0025
摘要： An orthopedic implant assembly comprising a stabilizing element, a securing element which attaches the stabilizing element to the bone, and a stopping member in the stabilizing element which inhibits the securing element from loosening or backing out of the bone. The stabilizing element has at least one bore with the stopping member therein. In one embodiment, the stopping member has a reversibly expandable inner and outer diameter to allow the securing element to pass posteriorly through the stopping member, but thereafter prevent or inhibit the securing element from anteriorly backing out of the posterior section of the transverse passageway. In another embodiment, the stopping member is secured to an anterior section of the transverse passageway, and the head of the securing element generally has a compressed configuration with a diameter less than the diameter of the stopping member, in which configuration the head can pass through the stopping member, and an uncompressed configuration with a diameter larger than the diameter of the stopping member.
摘要翻译：一种矫形植入物组件，包括稳定元件，将稳定元件附接到骨头上的固定元件以及稳定元件中的止动构件，其阻止固定元件松动或退出骨骼。稳定元件具有至少一个具有止动构件的孔。在一个实施例中，止动构件具有可逆地扩张的内部和外部直径，以允许固定元件向后通过止动构件，然后防止或阻止固定元件从横向通道的后部的前部背面离开。在另一个实施例中，止动构件固定到横向通道的前部，并且固定元件的头部通常具有直径小于止动构件的直径的压缩构造，头部可以穿过该构件的直径止动构件和直径大于止动构件的直径的未压缩构造。

9. 发明授权

US4400715A Thin film semiconductor device and method for manufacture 失效
标题翻译：薄膜半导体器件及其制造方法
公开(公告)号：US4400715A
公开(公告)日：1983-08-23
申请号：US208442
申请日：1980-11-19
申请人： Steven G. Barbee , James M. Leas , James R. Lloyd , Arunachala Nagarajan
发明人： Steven G. Barbee , James M. Leas , James R. Lloyd , Arunachala Nagarajan
IPC分类号： H01L29/73 , H01L21/02 , H01L21/20 , H01L21/28 , H01L21/3205 , H01L21/331 , H01L21/74 , H01L21/76 , H01L21/768 , H01L21/822 , H01L23/52 , H01L27/00 , H01L27/12 , H01L29/04
CPC分类号： H01L21/743 , H01L21/2026 , H01L21/8221 , H01L23/481 , H01L29/04 , H01L2924/0002 , H01L2924/09701
摘要： A process for the preparation of a semiconductor device in a thin film of a monocrystalline semiconductor material supported on the surface of a substrate. In the process a thin film of a monocrystalline semiconductor material is formed on a substrate. The film of monocrystalline semiconductor material is doped at various depths with various types and concentrations of dopants. Thereafter, contacts are established at various depths of the doped thin film. In one embodiment, a thin film of a non-monocrystalline semiconductor material is deposited on a substrate. The thin film of non-monocrystalline semiconductor material is doped in situ as it is being deposited with various doping impurities to provide various types and concentrations of doping impurities at various depths. The thin film of non-monocrystalline semiconductor material has at least one tapered region terminating in a point. The thin film of non-monocrystalline semiconductor material is traversed with a particle beam. The traverse is initiated at the point causing nucleation of a crystal at the point and subsequent growth of a monocrystalline thin film of semiconductor material from the point during the traverse. Contacts are then established at various depths to provide a semiconductor device, such as a bipolar transistor.
摘要翻译：一种用于制备支撑在衬底表面上的单晶半导体材料的薄膜中的半导体器件的方法。在此过程中，单晶半导体材料的薄膜形成在基板上。单晶半导体材料的膜在各种深度掺杂各种类型和浓度的掺杂剂。此后，在掺杂薄膜的各种深度处建立接触。在一个实施例中，将非单晶半导体材料的薄膜沉积在衬底上。非单晶半导体材料的薄膜原位掺杂，因为它被各种掺杂杂质沉积，以在各种深度提供各种类型和浓度的掺杂杂质。非单晶半导体材料的薄膜具有至少一个尖端区域终止于一点。非单晶半导体材料的薄膜用粒子束穿过。横穿是在导致晶体成核的点处开始的，并且在横越过程中半导体材料的单晶薄膜随后生长。然后在各种深度建立触点以提供诸如双极晶体管的半导体器件。

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