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1. 发明授权

US08823039B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08823039B2
公开(公告)日：2014-09-02
申请号：US13459342
申请日：2012-04-30
申请人： Chien-Fu Shen , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
发明人： Chien-Fu Shen , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
IPC分类号： H01L33/62
CPC分类号： H01L33/38 , H01L24/02 , H01L33/20 , H01L33/62 , H01L2224/04042 , H01L2224/48463 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting stack having an upper surface and a lower surface; a pad, arranged on the upper surface, comprising: a first bonding region; and a second bonding region physically connected to the first bonding region through a connecting region having a connecting width; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; and a third electrode extending from the pad and arranged between the first electrode and the second electrode. At least one of the first electrode, the second electrode, and the third electrode has a width smaller than the connecting width.
摘要翻译：本公开公开了一种发光装置。发光装置包括：具有上表面和下表面的发光叠层; 布置在所述上表面上的垫，包括：第一接合区域; 以及通过具有连接宽度的连接区域物理地连接到所述第一接合区域的第二接合区域; 连接到所述第一接合区域的第一电极; 连接到所述第二接合区域的第二电极; 以及从所述焊盘延伸并且布置在所述第一电极和所述第二电极之间的第三电极。第一电极，第二电极和第三电极中的至少一个具有小于连接宽度的宽度。

2. 发明申请

US20120211794A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20120211794A1
公开(公告)日：2012-08-23
申请号：US13459342
申请日：2012-04-30
申请人： Chien-Fu SHEN , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
发明人： Chien-Fu SHEN , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
IPC分类号： H01L33/62
CPC分类号： H01L33/38 , H01L24/02 , H01L33/20 , H01L33/62 , H01L2224/04042 , H01L2224/48463 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting stack having an upper surface and a lower surface; a pad, arranged on the upper surface, comprising: a first bonding region; and a second bonding region physically connected to the first bonding region through a connecting region having a connecting width; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; and a third electrode extending from the pad and arranged between the first electrode and the second electrode. At least one of the first electrode, the second electrode, and the third electrode has a width smaller than the connecting width.
摘要翻译：本公开公开了一种发光装置。发光装置包括：具有上表面和下表面的发光叠层; 布置在所述上表面上的垫，包括：第一接合区域; 以及通过具有连接宽度的连接区域物理地连接到所述第一接合区域的第二接合区域; 连接到所述第一接合区域的第一电极; 连接到所述第二接合区域的第二电极; 以及从所述焊盘延伸并且布置在所述第一电极和所述第二电极之间的第三电极。第一电极，第二电极和第三电极中的至少一个具有小于连接宽度的宽度。

3. 发明申请

US20090140280A1 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US20090140280A1
公开(公告)日：2009-06-04
申请号：US12292593
申请日：2008-11-21
申请人： Chien-Fu Shen , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
发明人： Chien-Fu Shen , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L24/02 , H01L33/20 , H01L33/62 , H01L2224/04042 , H01L2224/48463 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104 μm and 6.2×104 μm.
摘要翻译：发光器件包括衬底，形成在衬底上的外延结构，包括第一半导体层，第二半导体层和形成在第一半导体层和第二半导体层之间的发光层。在外延结构中形成沟槽以暴露外延结构的侧面的一部分和第一半导体层的表面的一部分，使得第一导电结构形成在第一半导体层的表面的一部分中沟槽，并且在第二半导体层上形成第二导电结构。第一导电结构包括彼此电接触的第一电极和第一焊盘。第二导电结构包括彼此电接触的第二电极和第二焊盘。此外，第一垫和第二垫中的至少一个的面积在1.5×10 4 mum到6.2×10 4 m之间。

4. 发明授权

US08188505B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08188505B2
公开(公告)日：2012-05-29
申请号：US12292593
申请日：2008-11-21
申请人： Chien-Fu Shen , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
发明人： Chien-Fu Shen , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L24/02 , H01L33/20 , H01L33/62 , H01L2224/04042 , H01L2224/48463 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104μm2 and 6.2×104 μm2.
摘要翻译：发光器件包括衬底，形成在衬底上的外延结构，包括第一半导体层，第二半导体层和形成在第一半导体层和第二半导体层之间的发光层。在外延结构中形成沟槽以暴露外延结构的侧面的一部分和第一半导体层的表面的一部分，使得第一导电结构形成在第一半导体层的表面的一部分中沟槽，并且在第二半导体层上形成第二导电结构。第一导电结构包括彼此电接触的第一电极和第一焊盘。第二导电结构包括彼此电接触的第二电极和第二焊盘。此外，第一焊盘和第二焊盘中的至少一个的面积在1.5×104μm2和6.2×104μm2之间。

5. 发明授权

US08076686B2 Light emitting diode and manufacturing method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08076686B2
公开(公告)日：2011-12-13
申请号：US12073736
申请日：2008-03-10
申请人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/46 , H01L2933/0083 , H01L2933/0091
摘要： A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method includes the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.
摘要翻译：公开了一种发光二极管及其制造方法。该制造方法包括以下步骤：在永久性基板上依次形成接合层，几何图案层，反射层，外延结构和第一电极，其中几何图案层具有周期性结构; 以及在所述永久基板的一侧上形成第二电极。

6. 发明申请

US20090224272A1 Light emitting diode and manufacturing method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20090224272A1
公开(公告)日：2009-09-10
申请号：US12073736
申请日：2008-03-10
申请人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/0079 , H01L33/46 , H01L2933/0083 , H01L2933/0091
摘要： A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method comprises the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.
摘要翻译：公开了一种发光二极管及其制造方法。该制造方法包括以下步骤：在永久性基板上依次形成接合层，几何图案层，反射层，外延结构和第一电极，其中几何图案层具有周期性结构; 以及在所述永久基板的一侧上形成第二电极。

7. 发明申请

US20080303047A1 Light-emitting diode device and manufacturing method therof 审中-公开
标题翻译：发光二极管器件及其制造方法
公开(公告)号：US20080303047A1
公开(公告)日：2008-12-11
申请号：US12153098
申请日：2008-05-14
申请人： Chien-Fu Shen , De-Shan Kuo , Cheng-Ta Kuo
发明人： Chien-Fu Shen , De-Shan Kuo , Cheng-Ta Kuo
IPC分类号： H01L33/00 , H01L21/02
CPC分类号： H01L33/46 , H01L33/22
摘要： A light-emitting diode (LED) device and manufacturing methods thereof are disclosed, wherein the LED device comprises a substrate, a plurality of micro-lens, a reflector, a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a first electrode and a second electrode. The substrate has a plurality of micro-lens on its upper surface. The first conductivity type semiconductor layer is on the upper surface of the substrate. The active layer and the second conductivity type semiconductor layer are sequentially on a portion of the first conductivity type semiconductor layer. The first electrode is on the other portion of the first conductivity type semiconductor layer uncovered by the active layer. The second electrode is on the second conductivity type semiconductor layer. The reflector layer is on a lower surface of the substrate.
摘要翻译：公开了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，多个微透镜，反射器，第一导电类型半导体层，有源层，第二导电类型半导体层，第一电极和第二电极。基板在其上表面上具有多个微透镜。第一导电型半导体层位于基板的上表面上。有源层和第二导电类型半导体层依次位于第一导电类型半导体层的一部分上。第一电极位于由有源层未覆盖的第一导电类型半导体层的另一部分上。第二电极在第二导电类型半导体层上。反射层位于基板的下表面上。

8. 发明申请

US20100029035A1 METHOD OF MANUFACTURING A PHOTOELECTRONIC DEVICE 有权
标题翻译：制造光电器件的方法
公开(公告)号：US20100029035A1
公开(公告)日：2010-02-04
申请号：US12511812
申请日：2009-07-29
申请人： Yu-Ling Chin , Li-Pin Jou , Yu-Chih Yang , Yu-Cheng Yang , Wei-Shou Chen , Cheng-Ta Kuo
发明人： Yu-Ling Chin , Li-Pin Jou , Yu-Chih Yang , Yu-Cheng Yang , Wei-Shou Chen , Cheng-Ta Kuo
IPC分类号： H01L21/28
CPC分类号： H01L33/0095 , H01L31/022425 , H01L33/44 , H01S5/0425 , Y02E10/50
摘要： This application discloses a method of manufacturing a photoelectronic device comprising steps of providing a semiconductor stack layer, forming at least one metal adhesive on the semiconductor stack layer by a printing technology, forming an electrode by heating the metal adhesive to remove the solvent in the metal adhesive, wherein an ohmic contact is formed between the electrode and the semiconductor stack layer.
摘要翻译：本申请公开了一种制造光电子器件的方法，包括以下步骤：提供半导体堆叠层，通过印刷技术在半导体堆叠层上形成至少一种金属粘合剂，通过加热金属粘合剂以除去金属中的溶剂形成电极粘合剂，其中在电极和半导体叠层之间形成欧姆接触。

9. 发明授权

US07888162B2 Method of manufacturing a photoelectronic device 有权
标题翻译：制造光电器件的方法
公开(公告)号：US07888162B2
公开(公告)日：2011-02-15
申请号：US12511812
申请日：2009-07-29
申请人： Yu-Ling Chin , Li-Pin Jou , Yu-Chih Yang , Yu-Cheng Yang , Wei-Shou Chen , Cheng-Ta Kuo
发明人： Yu-Ling Chin , Li-Pin Jou , Yu-Chih Yang , Yu-Cheng Yang , Wei-Shou Chen , Cheng-Ta Kuo
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： H01L33/0095 , H01L31/022425 , H01L33/44 , H01S5/0425 , Y02E10/50
摘要： This application discloses a method of manufacturing a photoelectronic device comprising steps of providing a semiconductor stack layer, forming at least one metal adhesive on the semiconductor stack layer by a printing technology, forming an electrode by heating the metal adhesive to remove the solvent in the metal adhesive, wherein an ohmic contact is formed between the electrode and the semiconductor stack layer.
摘要翻译：本申请公开了一种制造光电子器件的方法，包括以下步骤：提供半导体堆叠层，通过印刷技术在半导体堆叠层上形成至少一种金属粘合剂，通过加热金属粘合剂以除去金属中的溶剂形成电极粘合剂，其中在电极和半导体叠层之间形成欧姆接触。

10. 发明授权

US08278681B2 Light-emitting diode package and wafer-level packaging process of light-emitting diode 有权
标题翻译：发光二极管封装和晶圆级封装工艺的发光二极管
公开(公告)号：US08278681B2
公开(公告)日：2012-10-02
申请号：US12469669
申请日：2009-05-20
申请人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
发明人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L24/26 , H01L24/93 , H01L33/486 , H01L33/62 , H01L33/642 , H01L2924/01005 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/12041 , H01L2924/00
摘要： A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.
摘要翻译：提供了发光二极管的晶片级封装工艺。首先，在生长基板上形成半导体堆叠层。然后在半导体堆叠层上形成多个阻挡图案和多个反射层，其中每个反射层被一个屏障图案包围。然后在半导体堆叠层上形成第一结合层以覆盖阻挡图案和反射层。此后，设置具有多个第二接合层和彼此电绝缘的多个导电插塞的承载基板，并且第一接合层与第二接合层接合。然后将半导体堆叠层与生长衬底分离。接下来，对半导体堆叠层进行图案化以形成多个半导体堆叠图案。接下来，每个半导体堆叠图案电连接到导电插头。

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