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1. 发明授权

US08415683B2 Light emitting diode chip 有权
标题翻译：发光二极管芯片
公开(公告)号：US08415683B2
公开(公告)日：2013-04-09
申请号：US12464859
申请日：2009-05-12
申请人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
发明人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
IPC分类号： H01L27/15
CPC分类号： H01L33/0095 , H01L21/78 , H01L33/20 , H01L33/44
摘要： The present invention provides a manufacturing method of an LED chip. First, a device layer is formed on a growth substrate, wherein the device layer has a first surface connected to the growth substrate and a second surface. Next, a plurality of first trenches are formed on the second surface of the device layer. Then, a protection layer is formed on the side walls of the first trenches. After that, the second surface is bonded with a supporting substrate and the device layer is then separated from the growth substrate. Further, a plurality of second trenches corresponding to the first trenches are formed in the device layer to form a plurality of LEDs, wherein the second trenches extend from the first surface to the bottom portions of the first trenches. Furthermore, a plurality of electrodes are formed on the first surface of the device layer.
摘要翻译：本发明提供一种LED芯片的制造方法。首先，在生长衬底上形成器件层，其中器件层具有连接到生长衬底的第一表面和第二表面。接下来，在器件层的第二表面上形成多个第一沟槽。然后，在第一沟槽的侧壁上形成保护层。之后，将第二表面与支撑基板接合，然后将器件层与生长衬底分离。此外，在器件层中形成对应于第一沟槽的多个第二沟槽以形成多个LED，其中第二沟槽从第一沟槽的第一表面延伸到底部。此外，在器件层的第一表面上形成多个电极。

2. 发明授权

US08445327B2 Light-emitting diode package and wafer-level packaging process of light-emitting diode 有权
标题翻译：发光二极管封装和晶圆级封装工艺的发光二极管
公开(公告)号：US08445327B2
公开(公告)日：2013-05-21
申请号：US13403714
申请日：2012-02-23
申请人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
发明人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L24/26 , H01L24/93 , H01L33/486 , H01L33/62 , H01L33/642 , H01L2924/01005 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/12041 , H01L2924/00
摘要： A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.
摘要翻译：提供了发光二极管的晶片级封装工艺。首先，在生长基板上形成半导体堆叠层。然后在半导体堆叠层上形成多个阻挡图案和多个反射层，其中每个反射层被一个屏障图案包围。然后在半导体堆叠层上形成第一结合层以覆盖阻挡图案和反射层。此后，设置具有多个第二接合层和彼此电绝缘的多个导电插塞的承载基板，并且第一接合层与第二接合层接合。然后将半导体堆叠层与生长衬底分离。接下来，对半导体堆叠层进行图案化以形成多个半导体堆叠图案。接下来，每个半导体堆叠图案电连接到导电插头。

3. 发明申请

US20100258827A1 LIGHT-EMITTING DIODE PACKAGE AND WAFER-LEVEL PACKAGING PROCESS OF LIGHT-EMITTING DIODE 有权
标题翻译：发光二极管的发光二极管封装和水平包装工艺
公开(公告)号：US20100258827A1
公开(公告)日：2010-10-14
申请号：US12469669
申请日：2009-05-20
申请人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
发明人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
IPC分类号： H01L33/00 , H01L21/60
CPC分类号： H01L33/0079 , H01L24/26 , H01L24/93 , H01L33/486 , H01L33/62 , H01L33/642 , H01L2924/01005 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/12041 , H01L2924/00
摘要： A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.
摘要翻译：提供了发光二极管的晶片级封装工艺。首先，在生长基板上形成半导体堆叠层。然后在半导体堆叠层上形成多个阻挡图案和多个反射层，其中每个反射层被一个屏障图案包围。然后在半导体堆叠层上形成第一结合层以覆盖阻挡图案和反射层。此后，设置具有多个第二接合层和彼此电绝缘的多个导电插塞的承载基板，并且第一接合层与第二接合层接合。然后将半导体堆叠层与生长衬底分离。接下来，对半导体堆叠层进行图案化以形成多个半导体堆叠图案。接下来，每个半导体堆叠图案电连接到导电插头。

4. 发明申请

US20100258818A1 LIGHT EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREOF 有权
标题翻译：发光二极管芯片及其制造方法
公开(公告)号：US20100258818A1
公开(公告)日：2010-10-14
申请号：US12464859
申请日：2009-05-12
申请人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
发明人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
IPC分类号： H01L33/00 , H01L21/78
CPC分类号： H01L33/0095 , H01L21/78 , H01L33/20 , H01L33/44
摘要： The present invention provides a manufacturing method of an LED chip. First, a device layer is formed on a growth substrate, wherein the device layer has a first surface connected to the growth substrate and a second surface. Next, a plurality of first trenches are formed on the second surface of the device layer. Then, a protection layer is formed on the side walls of the first trenches. After that, the second surface is bonded with a supporting substrate and the device layer is then separated from the growth substrate. Further, a plurality of second trenches corresponding to the first trenches are formed in the device layer to form a plurality of LEDs, wherein the second trenches extend from the first surface to the bottom portions of the first trenches. Furthermore, a plurality of electrodes are formed on the first surface of the device layer.
摘要翻译：本发明提供一种LED芯片的制造方法。首先，在生长衬底上形成器件层，其中器件层具有连接到生长衬底的第一表面和第二表面。接下来，在器件层的第二表面上形成多个第一沟槽。然后，在第一沟槽的侧壁上形成保护层。之后，将第二表面与支撑基板接合，然后将器件层与生长衬底分离。此外，在器件层中形成对应于第一沟槽的多个第二沟槽以形成多个LED，其中第二沟槽从第一沟槽的第一表面延伸到底部。此外，在器件层的第一表面上形成多个电极。

5. 发明授权

US08278681B2 Light-emitting diode package and wafer-level packaging process of light-emitting diode 有权
标题翻译：发光二极管封装和晶圆级封装工艺的发光二极管
公开(公告)号：US08278681B2
公开(公告)日：2012-10-02
申请号：US12469669
申请日：2009-05-20
申请人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
发明人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L24/26 , H01L24/93 , H01L33/486 , H01L33/62 , H01L33/642 , H01L2924/01005 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/12041 , H01L2924/00
摘要： A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.
摘要翻译：提供了发光二极管的晶片级封装工艺。首先，在生长基板上形成半导体堆叠层。然后在半导体堆叠层上形成多个阻挡图案和多个反射层，其中每个反射层被一个屏障图案包围。然后在半导体堆叠层上形成第一结合层以覆盖阻挡图案和反射层。此后，设置具有多个第二接合层和彼此电绝缘的多个导电插塞的承载基板，并且第一接合层与第二接合层接合。然后将半导体堆叠层与生长衬底分离。接下来，对半导体堆叠层进行图案化以形成多个半导体堆叠图案。接下来，每个半导体堆叠图案电连接到导电插头。

6. 发明申请

US20120164768A1 Light-Emitting Diode Package and Wafer-Level Packaging Process of Light-Emitting Diode 有权
标题翻译：发光二极管的发光二极管封装和晶圆级封装工艺
公开(公告)号：US20120164768A1
公开(公告)日：2012-06-28
申请号：US13403714
申请日：2012-02-23
申请人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
发明人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
IPC分类号： H01L33/60
CPC分类号： H01L33/0079 , H01L24/26 , H01L24/93 , H01L33/486 , H01L33/62 , H01L33/642 , H01L2924/01005 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/12041 , H01L2924/00
摘要： A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.
摘要翻译：提供了发光二极管的晶片级封装工艺。首先，在生长基板上形成半导体堆叠层。然后在半导体堆叠层上形成多个阻挡图案和多个反射层，其中每个反射层被一个屏障图案包围。然后在半导体堆叠层上形成第一结合层以覆盖阻挡图案和反射层。此后，设置具有多个第二接合层和彼此电绝缘的多个导电插塞的承载基板，并且第一接合层与第二接合层接合。然后将半导体堆叠层与生长衬底分离。接下来，对半导体堆叠层进行图案化以形成多个半导体堆叠图案。接下来，每个半导体堆叠图案电连接到导电插头。

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