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2. 发明授权

US6140252A Porous dielectric material with improved pore surface properties for electronics applications 失效
标题翻译：多孔电介质材料，具有改进的孔表面性能，适用于电子应用
公开(公告)号：US6140252A
公开(公告)日：2000-10-31
申请号：US72905
申请日：1998-05-05
申请人： Chih-Chen Cho , Bruce E. Gnade , Douglas M. Smith , Jin Changming , William C. Ackerman , Gregory C. Johnston
发明人： Chih-Chen Cho , Bruce E. Gnade , Douglas M. Smith , Jin Changming , William C. Ackerman , Gregory C. Johnston
IPC分类号： H01L21/768 , H01L21/316 , H01L21/469 , H01L23/522 , H01L23/532
CPC分类号： H01L23/5329 , H01L21/7682 , H01L23/5222 , H01L2221/1047 , H01L2924/0002
摘要： This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for example, between patterned conductors 24. The method may comprise providing a substrate comprising a microelectronic circuit and a porous silica layer, the porous silica layer having an average pore diameter between 2 and 80 nm; and heating the substrate to one or more temperatures between 100 and 490 degrees C. in a substantially halogen-free atmosphere, whereby one or more dielectric properties of the porous dielectric are improved. In some embodiments, the atmosphere comprises a phenyl-containing atmosphere, such as hexaphenyldisilazane. In some embodiments, the method further comprises cooling the substrate and exposing the substrate to a substantially halogen-free atmosphere comprising either a phenyl-containing compound, such as hexaphenyldisilazane; or a methyl-containing compound, such as hexamethyldisilazane. It has been found that a porous structure treated in such a manner generally exhibits improved dielectric properties relative to an untreated sample.
摘要翻译：本发明提供一种用于半导体器件的改进的多孔结构及其制造方法。该方法可以应用于可以例如在图案化导体24之间沉积的现有多孔结构28.该方法可以包括提供包括微电子电路和多孔二氧化硅层的基底，多孔二氧化硅层具有平均孔直径在2和80nm之间; 并在基本上无卤素的气氛中将衬底加热至100至490摄氏度之间的一个或多个温度，从而提高多孔电介质的一种或多种介电性能。在一些实施方案中，气氛包含含苯基的气氛，例如六苯基二硅氮烷。在一些实施方案中，该方法还包括冷却基底并将基底暴露于基本上无卤素的气氛中，该气氛包含含苯基的化合物，例如六苯基二硅氮烷; 或含甲基的化合物，例如六甲基二硅氮烷。已经发现，以这种方式处理的多孔结构通常相对于未处理的样品表现出改善的介电性能。

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