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    • 2. 发明授权
    • Nanoporous dielectric thin film formation using a post-deposition catalyst
    • 使用后沉积催化剂形成纳米孔隙介电薄膜
    • US06319852B1
    • 2001-11-20
    • US09488185
    • 2000-01-20
    • Douglas M. SmithGregory P. JohnstonWilliam C. AckermanShin-Puu Jeng
    • Douglas M. SmithGregory P. JohnstonWilliam C. AckermanShin-Puu Jeng
    • H01L2131
    • C01B33/158C01B33/145C01B33/155H01L21/02126H01L21/02203H01L21/02216H01L21/02282H01L21/02337H01L21/02343H01L21/02359H01L21/3122H01L21/31695H01L21/7682H01L2221/1047
    • This pertains generally to precursors and deposition methods suited to aerogel thin film fabrication of nanoporous dielectrics. An aerogel precursor sol is disclosed. This aerogel precursor sol contains a metal alkoxide (such as TEOS) and a solvent, but no gelation catalyst. By a method according to the present invention, such a precursor sol is applied as a nongelling thin film 14 to a semiconductor substrate 10. This substrate may contain patterned conductors 12, gaps 13, or other structures. An independent gelation catalyst (preferably, vapor phase ammonia) is added to promote rapid gelation of the thin film sol 14 at the desired time. One advantage is that it allows substantially independent control of gelation and pore fluid evaporation. This independent catalyst introduction allows additional processing steps to be performed between sol deposition and the onset of substantial gelation. One potential step is to evaporate a portion of the pore fluid solvent. Additional advantages of independent catalyst introduction are that it reduces the need for process steps requiring critical timing and provides a large increase in the pot life of the precursor sol.
    • 这通常涉及适用于纳米多孔电介质的气凝胶薄膜制造的前体和沉积方法。 公开了一种气凝胶前体溶胶。 该气凝胶前体溶胶含有金属醇盐(如TEOS)和溶剂,但不含凝胶化催化剂。 通过根据本发明的方法,这种前体溶胶作为不合格薄膜14施加到半导体衬底10.该衬底可以包含图案化导体12,间隙13或其它结构。 加入独立的凝胶化催化剂(优选气相氨)以促进薄膜溶胶14在所需时间的快速凝胶化。 一个优点是它可以实质上独立地控制凝胶化和孔隙流体蒸发。 这种独立的催化剂引入允许在溶胶沉积和实质凝胶化的开始之间进行额外的加工步骤。 一个潜在的步骤是蒸发一部分孔隙流体溶剂。 独立催化剂引入的另外的优点是减少了对需要临界时间的工艺步骤的需要,并且提供前体溶胶的适用期的大量增加。
    • 4. 发明授权
    • Glycol-based method for forming a thin-film nanoporous dielectric
    • 用于形成薄膜纳米多孔电介质的基于乙二醇的方法
    • US5736425A
    • 1998-04-07
    • US748925
    • 1996-11-14
    • Douglas M. SmithWilliam C. Ackerman
    • Douglas M. SmithWilliam C. Ackerman
    • B01J13/00C01B33/158C03C1/00C03C17/25H01L21/314H01L21/316H01L21/00
    • H01L21/02126B01J13/0091C01B33/1585C03C1/008C03C17/25H01L21/02203H01L21/02216H01L21/02282H01L21/02337H01L21/31695C03C2217/213C03C2218/113
    • This invention has enabled a new, simple nanoporous dielectric fabrication method. In general, this invention uses a glycol, such as ethylene glycol, as a solvent. This new method allows both bulk and thin film aerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Prior art aerogels have required at least one of these steps to prevent substantial pore collapse during drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. Although not required to prevent substantial densification, this new method does not exclude the use of supercritical drying or surface modification steps prior to drying. In general, this new method is compatible with most prior art aerogel techniques. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying.
    • 本发明已经实现了一种新的简单的纳米多孔电介质制造方法。 通常,本发明使用乙二醇如乙二醇作为溶剂。 这种新方法允许在超临界干燥,冷冻干燥或干燥前的表面改性步骤中制造体积和薄膜气凝胶。 现有技术的气凝胶需要这些步骤中的至少一个来防止在干燥期间大量的孔隙破裂。 因此,本发明允许在室温和大气压下制备纳米多孔电介质,而无需单独的表面改性步骤。 尽管不需要防止实质致密化,但是这种新方法并不排除在干燥之前使用超临界干燥或表面改性步骤。 通常,这种新方法与大多数现有技术的气凝胶技术相兼容。 虽然这种新方法允许在干燥期间制造气凝胶而没有实质的孔隙塌陷,但在老化和/或干燥期间可能存在一些永久收缩。
    • 6. 发明授权
    • Polyol-based method for forming thin film aerogels on semiconductor
substrates
    • 用于在半导体衬底上形成薄膜气凝胶的基于多元醇的方法
    • US5807607A
    • 1998-09-15
    • US748926
    • 1996-11-14
    • Douglas M. SmithWilliam C. AckermanRichard A. Stoltz
    • Douglas M. SmithWilliam C. AckermanRichard A. Stoltz
    • B05D3/02H01L21/31H01L21/316H01L21/469B05D5/12H01L21/00
    • H01L21/02126H01L21/02203H01L21/02216H01L21/02282H01L21/02337H01L21/02343H01L21/02359H01L21/31695
    • This invention has enabled a new, simple nanoporous dielectric fabrication method. In general, this invention uses a polyol, such as glycerol, as a solvent. This new method allows both bulk and thin film aerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Prior art aerogels have required at least one of these steps to prevent substantial pore collapse during drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. Although not required to prevent substantial densification, this new method does not exclude the use of supercritical drying or surface modification steps prior to drying. In general, this new method is compatible with most prior art aerogel techniques. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying.
    • 本发明已经实现了一种新的简单的纳米多孔电介质制造方法。 通常,本发明使用多元醇如甘油作为溶剂。 这种新方法允许在超临界干燥,冷冻干燥或干燥前的表面改性步骤中制造体积和薄膜气凝胶。 现有技术的气凝胶需要这些步骤中的至少一个来防止在干燥期间大量的孔隙破裂。 因此,本发明允许在室温和大气压下制备纳米多孔电介质,而无需单独的表面改性步骤。 尽管不需要防止实质致密化,但是这种新方法并不排除在干燥之前使用超临界干燥或表面改性步骤。 通常,这种新方法与大多数现有技术的气凝胶技术相兼容。 虽然这种新方法允许在干燥期间制造气凝胶而没有实质的孔隙塌陷,但在老化和/或干燥期间可能存在一些永久收缩。
    • 9. 发明授权
    • Aerogel thin film formation from multi-solvent systems
    • 从多溶剂系统形成气凝胶薄膜
    • US6130152A
    • 2000-10-10
    • US746679
    • 1996-11-14
    • Douglas M. SmithGregory P. JohnstonWilliam C. AckermanShin-Puu JengBruce E. Gnade
    • Douglas M. SmithGregory P. JohnstonWilliam C. AckermanShin-Puu JengBruce E. Gnade
    • B01F3/12C01B33/14C01B33/145C01B33/155C01B33/158H01L21/312H01L21/316H01L21/768
    • C01B33/158C01B33/145C01B33/155H01L21/02126H01L21/02216H01L21/02282H01L21/3122H01L21/7682H01L21/31695
    • This invention pertains generally to precursors and deposition methods suited to aerogel thin film fabrication. An aerogel precursor sol which contains an oligomerized metal alkoxide (such as TEOS), a high vapor pressure solvent (such as ethanol) and a low vapor pressure solvent (such as water and 1-butanol) is disclosed. By a method according to the present invention, such a precursor sol is applied as a thin film to a semiconductor wafer, and the high vapor pressure solvent is allowed to evaporate while evaporation of the low vapor pressure solvent is limited, preferably by controlling the atmosphere adjacent to the wafer. The reduced sol is then allowed to gel at a concentration determined by the ratio of metal.alkoxide to low vapor pressure solvent. One advantage of the present invention is that it provides a stable, spinnable sol for setting film thickness and providing good planarity and gap fill for patterned wafers. In addition, however, the reduced sol may be gelled rapidly from a known sol concentration keyed to the desired final density of the aerogel thin film and largely independent of film thickness and spin conditions.
    • 本发明一般涉及适用于气凝胶薄膜制造的前体和沉积方法。 公开了含有低聚金属醇盐(如TEOS),高蒸气压溶剂(如乙醇)和低蒸气压溶剂(如水和1-丁醇))的气凝胶前体溶胶。 通过根据本发明的方法,将这种前体溶胶作为薄膜施加到半导体晶片,并且在蒸发低蒸气压溶剂的同时,优选通过控制气氛,使高蒸气压溶剂蒸发 邻近晶片。 然后将还原的溶胶以由金属醇盐与低蒸气压溶剂的比例确定的浓度凝胶化。 本发明的一个优点是提供了一种稳定的可纺丝溶胶,用于设定膜厚度并为图案化晶片提供良好的平面度和间隙填充。 然而,此外,还原的溶胶可以从已知的溶胶浓度快速凝胶化,所述溶胶浓度与气凝胶薄膜的所需最终密度密切相关,并且在很大程度上与膜厚度和旋转条件无关。