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1. 发明授权

US06396671B1 Ruthenium bias compensation layer for spin valve head and process of manufacturing 失效
标题翻译：用于自旋阀头的钌偏置补偿层和制造过程
公开(公告)号：US06396671B1
公开(公告)日：2002-05-28
申请号：US09525670
申请日：2000-03-15
申请人： Cheng T. Horng , Mao-Min Chen , Kochan Ju , Min Li , Simon H. Liao , Ku-Ying Tong
发明人： Cheng T. Horng , Mao-Min Chen , Kochan Ju , Min Li , Simon H. Liao , Ku-Ying Tong
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3143 , G11B5/3903 , H01F10/3268 , H01F10/3295 , H01F41/325 , Y10T29/49044
摘要： A spin valve structure, and method for manufacturing it, are described. The valve is subject to only small bias point shifts by sense current fields while at the same time has good GMR characteristics. This is achieved by introducing a layer of about 15 Angstroms of ruthenium between the seed layer and the free layer. This acts as an effective bias control layer with the added benefit of providing interfaces (to both the seed and the free layer) that are highly favorable to specular reflection of the conduction electrons. The HCP crystal structure of this ruthenium layer also improves the crystalline quality of the free layer thereby improving its performance with respect to the GMR ratio.
摘要翻译：自旋阀结构及其制造方法。阀门只能通过感应电流场进行小的偏移点偏移，同时具有良好的GMR特性。这通过在种子层和自由层之间引入约15埃的钌层来实现。这充当有效的偏置控制层，具有提供对传导电子的镜面反射非常有利的界面（对种子和自由层）的附加益处。该钌层的HCP晶体结构也改善了自由层的结晶质量，从而提高了其相对于GMR比的性能。

2. 发明授权

US06292336B1 Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient 失效
标题翻译：具有增强磁阻（MR）系数的巨磁阻（GMR）传感器元件
公开(公告)号：US06292336B1
公开(公告)日：2001-09-18
申请号：US09408703
申请日：1999-09-30
申请人： Cheng T. Horng , Ru-Ying Tong , Kochan Ju , Mao-Min Chen , Jei-Wei Chang , Simon H. Liao
发明人： Cheng T. Horng , Ru-Ying Tong , Kochan Ju , Mao-Min Chen , Jei-Wei Chang , Simon H. Liao
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/3268
摘要： A method for forming a giant magnetoresistive (GMR) sensor element, and a giant magnetoresistive (GMR) sensor element formed in accord with the method. In accord with the method, there is first provided a substrate. There is then formed over the substrate a seed layer formed of a magnetoresistive (MR) resistivity sensitivity enhancing material selected from the group consisting or nickel-chromium alloys and nickel-iron-chromium alloys. There is then formed over the seed layer a nickel oxide material layer. Finally, there is then formed over the nickel oxide material layer a free ferromagnetic layer separated from a pinned ferromagnetic layer in turn formed thereover by a non-magnetic conductor spacer layer, where the pinned ferromagnetic layer in turn has a pinning material layer formed thereover. The method contemplates a giant magnetoresistive (GMR) sensor element formed in accord with the method. The nickel oxide material layer provides the giant magnetoresistive (GMR) sensor element with an enhanced magnetoresistive (MR) resistivity sensitivity.
摘要翻译：一种用于形成巨磁阻（GMR）传感器元件的方法，以及根据该方法形成的巨磁阻（GMR）传感元件。根据该方法，首先提供基板。然后在衬底上形成由选自镍铬合金和镍 - 铁 - 铬合金的磁阻（MR）电阻率敏感度增强材料形成的晶种层。然后在种子层上形成氧化镍材料层。最后，然后在氧化镍材料层上形成与被钉扎的铁磁性层分离的自由铁磁层，然后由非磁性导体间隔层形成，其中钉扎的铁磁层又形成有钉扎材料层。该方法考虑了根据该方法形成的巨磁阻（GMR）传感器元件。氧化镍材料层提供具有增强的磁阻（MR）电阻率敏感性的巨磁阻（GMR）传感器元件。

3. 发明授权

US06775903B2 Method for fabricating a top magnetoresistive sensor element having a synthetic pinned layer 失效
标题翻译：用于制造具有合成固定层的顶部磁阻传感器元件的方法
公开(公告)号：US06775903B2
公开(公告)日：2004-08-17
申请号：US09953546
申请日：2001-09-17
申请人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
发明人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F10/3295 , Y10T29/49032 , Y10T29/49034 , Y10T29/49039 , Y10T29/49044 , Y10T29/49055
摘要： A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve configuration are separated by a Ru spacer layer approximately 3 angstroms thick, while the two layers in the bottom spin valve configuration are separated by a Rh spacer layer approximately 5 angstroms thick. This allows the use of an ultra thin MnPt antiferromagnetic pinning layer of thickness between approximately 80 and approximately 150 angstroms. The sensor structure produced thereby is suitable for high density applications.
摘要翻译：用于形成顶部和底部自旋阀传感器和如此形成的传感器的方法，所述传感器具有强耦合的SyAP钉扎层和超薄反铁磁钉扎层。包括顶阀配置中的SyAP钉扎层的两个强耦合铁磁层由大约3埃厚的Ru隔离层隔开，而底部自旋阀结构中的两个层被大约5埃厚的Rh间隔层隔开。这允许使用厚度在大约80和大约150埃之间的超薄MnPt反铁磁性钉扎层。由此生产的传感器结构适用于高密度应用。

4. 发明授权

US06972934B2 Synthetic anti-parallel spin valve with thin AFM layer for very high density application 失效
标题翻译：具有薄AFM层的合成反并联自旋阀，用于非常高密度的应用
公开(公告)号：US06972934B2
公开(公告)日：2005-12-06
申请号：US10883930
申请日：2004-07-02
申请人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
发明人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/14 , H01F10/16 , H01F10/32 , H01F41/14 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F10/3295 , Y10T29/49032 , Y10T29/49034 , Y10T29/49039 , Y10T29/49044 , Y10T29/49055
摘要： A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve configuration are separated by a Ru spacer layer approximately 3 angstroms thick, while the two layers in the bottom spin valve configuration are separated by a Rh spacer layer approximately 5 angstroms thick. This allows the use of an ultra thin MnPt antiferromagnetic pinning layer of thickness between approximately 80 and approximately 150 angstroms. The sensor structure produced thereby is suitable for high density applications.
摘要翻译：用于形成顶部和底部自旋阀传感器和如此形成的传感器的方法，所述传感器具有强耦合的SyAP钉扎层和超薄反铁磁钉扎层。包括顶阀配置中的SyAP钉扎层的两个强耦合铁磁层由大约3埃厚的Ru隔离层隔开，而底部自旋阀结构中的两个层被大约5埃厚的Rh间隔层隔开。这允许使用厚度在大约80和大约150埃之间的超薄MnPt反铁磁性钉扎层。由此生产的传感器结构适用于高密度应用。

5. 发明授权

US06882509B2 GMR configuration with enhanced spin filtering 有权
标题翻译： GMR配置与增强的自旋过滤
公开(公告)号：US06882509B2
公开(公告)日：2005-04-19
申请号：US10791021
申请日：2004-03-02
申请人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng T. Horng , Kochan Ju , Simon Liao
发明人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng T. Horng , Kochan Ju , Simon Liao
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/00 , H01F10/06 , H01F10/12 , H01F10/14 , H01F10/16 , H01F10/18 , H01F10/30 , H01F10/32 , H01F41/30 , H01L43/08 , H01L43/12 , G11B5/33 , G11B5/127
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3133 , G11B5/3903 , G11B5/3909 , H01F10/3272 , H01L43/08 , Y10T428/1121 , Y10T428/1129 , Y10T428/1157 , Y10T428/1171 , Y10T428/12944 , Y10T428/2495
摘要： Disclosed is a method of making a SVGMR sensor element. In the first embodiment a buffer layer is formed between a seed layer and a ferromagnetic (FM) free layer, the buffer layer being composed of alpha-Fe2O3 having a crystal lattice constant that is close to the FM free layer's crystal constant and has the same crystal structure. The metal oxide buffer layer enhances the specular scattering. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter-SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment include a pinned FM layer comprising a three layer structure of a lower AP layer, a space layer (e.g., Ru) and an upper AP layer.
摘要翻译：公开了一种制造SVGMR传感器元件的方法。在第一实施例中，在种子层和不含铁磁性（FM）的层之间形成缓冲层，该缓冲层由α-Fe 2 O 3 3 N 3 晶格常数接近于FM自由层的晶体常数，具有相同的晶体结构。金属氧化物缓冲层增强了镜面散射。在第二实施例中，在缓冲层上形成高电导率层（HCL）以产生自旋滤波器-GVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。第三实施例包括包括下AP层的三层结构，空间层（例如Ru）和上AP层的钉扎FM层。

6. 发明授权

US06430015B2 Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration 失效
标题翻译：具有反并联交换配置的带状磁阻（SMR）和双条磁阻（DSMR）头的制造方法
公开(公告)号：US06430015B2
公开(公告)日：2002-08-06
申请号：US09773743
申请日：2001-02-02
申请人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
发明人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B2005/3996
摘要： A longitudinally magnetically biased dual stripe magnetoresistive (DSMR) sensor element comprises a first patterned magnetoresistive (MR) layer. There are contacts at the opposite ends of the patterned magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer, each of the stacks including a first Anti-Ferro-Magnetic (AFM) layer and a first lead layer. With the first MR layer in place the device was annealed in the presence of a longitudinal external magnetic field. A second patterned magnetoresistive (MR) layer was formed above the previous structure. There are contacts at the opposite ends of the second patterned magnetoresistive (MR) layer with a second pair of stacks defining a second track width of the second patterned magnetoresistive (MR) layer. Each of the second pair of stacks includes spacer layer is composed of a metal, a Ferro-Magnetic (FM) layer, a second Anti-Ferro-Magnetic (AFM) layer and a second lead layer. With the second MR layer in place, the device was annealed in the presence of a second longitudinal external magnetic field.
摘要翻译：纵向磁偏置双条磁阻（DSMR）传感器元件包括第一图案化磁阻（MR）层。在图案化磁阻（MR）层的相对端处存在触点，第一对叠层限定第一磁阻（MR）层的轨道宽度，第一对堆叠限定第一磁阻（MR）的磁道宽度，层，每个堆叠包括第一抗铁磁（AFM）层和第一引线层。在第一MR层就位的情况下，器件在存在纵向外部磁场的情况下退火。在先前结构之上形成第二图案化磁阻（MR）层。在第二图案化磁阻（MR）层的相对端具有限定第二图案化磁阻（MR）层的第二磁道宽度的第二对叠层的触点。第二对堆叠中的每一个包括间隔层由金属，铁磁（FM）层，第二抗铁磁（AFM）层和第二引线层组成。在第二MR层就位的情况下，器件在第二纵向外部磁场的存在下退火。

7. 发明授权

US06204071B1 Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration 失效
标题翻译：具有反并联交换配置的带状磁阻（SMR）和双条磁阻（DSMR）头的制造方法
公开(公告)号：US06204071B1
公开(公告)日：2001-03-20
申请号：US09408491
申请日：1999-09-30
申请人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
发明人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
IPC分类号： H01L2100
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B2005/3996
摘要： A method for forming a longitudinally magnetically biased dual stripe magnetoresistive (DSMR) sensor element comprises forming a first patterned magnetoresistive (MR) layer. Contact the opposite ends of the patterned magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer, each of the stacks including a first Anti-Ferro-Magnetic (AFM) layer and a first lead layer. Then anneal the device in the presence of a longitudinal external magnetic field. Next, form a second patterned magnetoresistive (MR) layer above the previous structure. Contact the opposite ends of the second patterned magnetoresistive (MR) layer with a second pair of stacks defining a second track width of the second patterned magnetoresistive (MR) layer. Each of the second pair of stacks includes spacer layer composed of a metal, a Ferro-Magnetic (FM) layer, a second Anti-Ferro-Magnetic (AFM) layer and a second lead layer. Then anneal the device in the presence of a second longitudinal external magnetic field.
摘要翻译：用于形成纵向磁偏置双条磁阻（DSMR）传感器元件的方法包括形成第一图案化磁阻（MR）层。用限定第一磁阻（MR）层的轨道宽度的第一对叠层接触图案化磁阻（MR）层的相对端，每个堆叠包括第一抗铁磁（AFM）层和第一铅层。然后在存在纵向外部磁场的情况下退火该器件。接下来，在先前的结构之上形成第二图案化磁阻（MR）层。用限定第二图案化磁阻（MR）层的第二磁道宽度的第二对叠层接触第二图案化磁阻（MR）层的相对端。第二对堆叠中的每一个包括由金属，铁磁（FM）层，第二抗铁磁（AFM）层和第二引线层组成的间隔层。然后在存在第二纵向外部磁场的情况下退火该器件。

8. 发明授权

US07211447B2 Structure and method to fabricate high performance MTJ devices for MRAM applications 失效
标题翻译：制造用于MRAM应用的高性能MTJ器件的结构和方法
公开(公告)号：US07211447B2
公开(公告)日：2007-05-01
申请号：US11080868
申请日：2005-03-15
申请人： Cheng T. Horng , Ru-Ying Tong , Mao-Min Chen , Liubo Hong , Min Li
发明人： Cheng T. Horng , Ru-Ying Tong , Mao-Min Chen , Liubo Hong , Min Li
IPC分类号： H01L21/00
CPC分类号： H01L43/12
摘要： A method of forming a high performance MTJ in an MRAM array is disclosed. A Ta/Ru capping layer in a bottom conductor is sputter etched to remove the Ru layer and form an amorphous Ta capping layer. A key feature is a subsequent surface treatment of the Ta capping layer in a transient vacuum chamber where a self-annealing occurs and a surfactant layer is formed on the Ta surface. The resulting smooth and flat Ta surface promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2.
摘要翻译：公开了一种在MRAM阵列中形成高性能MTJ的方法。溅射蚀刻底部导体中的Ta / Ru覆盖层以去除Ru层并形成无定形Ta覆盖层。一个关键的特征是在瞬态真空室中Ta覆盖层的后续表面处理，其中发生自退火并且在Ta表面上形成表面活性剂层。所得到的平滑且平坦的Ta表面促进在表面活性剂层上随后形成的MTJ层中的光滑和平坦的表面。对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层来产生大于40％的dR / R和约4000欧姆 - 姆2的RA。

9. 发明授权

US07208807B2 Structure and method to fabricate high performance MTJ devices for MRAM applications 失效
标题翻译：制造用于MRAM应用的高性能MTJ器件的结构和方法
公开(公告)号：US07208807B2
公开(公告)日：2007-04-24
申请号：US11080860
申请日：2005-03-15
申请人： Cheng T. Horng , Ru-Ying Tong , Mao-Min Chen , Liubo Hong , Min Li
发明人： Cheng T. Horng , Ru-Ying Tong , Mao-Min Chen , Liubo Hong , Min Li
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3906 , H01L43/12
摘要： A high performance MTJ in an MRAM array is disclosed in which the bottom conductor has an amorphous Ta capping layer. A key feature is a surfactant layer comprised of oxygen that is formed on the Ta surface. The resulting smooth and flat Ta capping layer promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2. The MTJ configuraton is extendable to a 0.2×0.4 micron MTJ bit size.
摘要翻译：公开了一种MRAM阵列中的高性能MTJ，其中底部导体具有无定形Ta覆盖层。关键特征是由在Ta表面上形成的氧构成的表面活性剂层。得到的平滑且平坦的Ta覆盖层促进MTJ层中平滑且平坦的表面，随后在表面活性剂层上形成。对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层来产生大于40％的dR / R和约4000欧姆 - 姆2的RA。 MTJ配置可扩展到0.2x0.4微米的MTJ位大小。

10. 发明授权

US06989973B2 Spin filter bottom spin valve head with continuous spacer exchange bias 失效
标题翻译：旋转过滤器底部旋转阀头具有连续的间隔件交换偏置
公开(公告)号：US06989973B2
公开(公告)日：2006-01-24
申请号：US10292351
申请日：2002-11-12
申请人： Cheng T. Horng , Mao-Min Chen , Min Li , Ru-Ying Tong
发明人： Cheng T. Horng , Mao-Min Chen , Min Li , Ru-Ying Tong
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3163 , G11B5/3903 , H01F10/324 , H01F10/3272 , H01F10/3295 , H01F41/302 , H01F41/325 , Y10T29/49034 , Y10T29/49044
摘要： A high performance specular free layer bottom spin valve is disclosed. This structure made up the following layers: NiCr/MnPt/CoFe/Ru/CoFe/Cu/free layer/Cu/Ta or TaO/Al2O3. A key feature is that the free layer is made of a very thin CoFe/NiFe composite layer. Experimental data confirming the effectiveness of this structure is provided, together with a method for manufacturing it and, additionally, its longitudinal bias leads.
摘要翻译：公开了一种高性能镜面自由层底部自旋阀。该结构由以下层构成：NiCr / MnPt / CoFe / Ru / CoFe / Cu /自由层/ Cu / Ta或TaO / Al 2 O 3 3。一个关键的特征是自由层由非常薄的CoFe / NiFe复合层制成。提供了确认该结构的有效性的实验数据，以及其制造方法以及另外其纵向偏置引线。

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