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1. 发明授权

US06882509B2 GMR configuration with enhanced spin filtering 有权
标题翻译： GMR配置与增强的自旋过滤
公开(公告)号：US06882509B2
公开(公告)日：2005-04-19
申请号：US10791021
申请日：2004-03-02
申请人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng T. Horng , Kochan Ju , Simon Liao
发明人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng T. Horng , Kochan Ju , Simon Liao
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/00 , H01F10/06 , H01F10/12 , H01F10/14 , H01F10/16 , H01F10/18 , H01F10/30 , H01F10/32 , H01F41/30 , H01L43/08 , H01L43/12 , G11B5/33 , G11B5/127
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3133 , G11B5/3903 , G11B5/3909 , H01F10/3272 , H01L43/08 , Y10T428/1121 , Y10T428/1129 , Y10T428/1157 , Y10T428/1171 , Y10T428/12944 , Y10T428/2495
摘要： Disclosed is a method of making a SVGMR sensor element. In the first embodiment a buffer layer is formed between a seed layer and a ferromagnetic (FM) free layer, the buffer layer being composed of alpha-Fe2O3 having a crystal lattice constant that is close to the FM free layer's crystal constant and has the same crystal structure. The metal oxide buffer layer enhances the specular scattering. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter-SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment include a pinned FM layer comprising a three layer structure of a lower AP layer, a space layer (e.g., Ru) and an upper AP layer.
摘要翻译：公开了一种制造SVGMR传感器元件的方法。在第一实施例中，在种子层和不含铁磁性（FM）的层之间形成缓冲层，该缓冲层由α-Fe 2 O 3 3 N 3 晶格常数接近于FM自由层的晶体常数，具有相同的晶体结构。金属氧化物缓冲层增强了镜面散射。在第二实施例中，在缓冲层上形成高电导率层（HCL）以产生自旋滤波器-GVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。第三实施例包括包括下AP层的三层结构，空间层（例如Ru）和上AP层的钉扎FM层。

2. 发明授权

US06292336B1 Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient 失效
标题翻译：具有增强磁阻（MR）系数的巨磁阻（GMR）传感器元件
公开(公告)号：US06292336B1
公开(公告)日：2001-09-18
申请号：US09408703
申请日：1999-09-30
申请人： Cheng T. Horng , Ru-Ying Tong , Kochan Ju , Mao-Min Chen , Jei-Wei Chang , Simon H. Liao
发明人： Cheng T. Horng , Ru-Ying Tong , Kochan Ju , Mao-Min Chen , Jei-Wei Chang , Simon H. Liao
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/3268
摘要： A method for forming a giant magnetoresistive (GMR) sensor element, and a giant magnetoresistive (GMR) sensor element formed in accord with the method. In accord with the method, there is first provided a substrate. There is then formed over the substrate a seed layer formed of a magnetoresistive (MR) resistivity sensitivity enhancing material selected from the group consisting or nickel-chromium alloys and nickel-iron-chromium alloys. There is then formed over the seed layer a nickel oxide material layer. Finally, there is then formed over the nickel oxide material layer a free ferromagnetic layer separated from a pinned ferromagnetic layer in turn formed thereover by a non-magnetic conductor spacer layer, where the pinned ferromagnetic layer in turn has a pinning material layer formed thereover. The method contemplates a giant magnetoresistive (GMR) sensor element formed in accord with the method. The nickel oxide material layer provides the giant magnetoresistive (GMR) sensor element with an enhanced magnetoresistive (MR) resistivity sensitivity.
摘要翻译：一种用于形成巨磁阻（GMR）传感器元件的方法，以及根据该方法形成的巨磁阻（GMR）传感元件。根据该方法，首先提供基板。然后在衬底上形成由选自镍铬合金和镍 - 铁 - 铬合金的磁阻（MR）电阻率敏感度增强材料形成的晶种层。然后在种子层上形成氧化镍材料层。最后，然后在氧化镍材料层上形成与被钉扎的铁磁性层分离的自由铁磁层，然后由非磁性导体间隔层形成，其中钉扎的铁磁层又形成有钉扎材料层。该方法考虑了根据该方法形成的巨磁阻（GMR）传感器元件。氧化镍材料层提供具有增强的磁阻（MR）电阻率敏感性的巨磁阻（GMR）传感器元件。

3. 发明授权

US06204071B1 Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration 失效
标题翻译：具有反并联交换配置的带状磁阻（SMR）和双条磁阻（DSMR）头的制造方法
公开(公告)号：US06204071B1
公开(公告)日：2001-03-20
申请号：US09408491
申请日：1999-09-30
申请人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
发明人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
IPC分类号： H01L2100
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B2005/3996
摘要： A method for forming a longitudinally magnetically biased dual stripe magnetoresistive (DSMR) sensor element comprises forming a first patterned magnetoresistive (MR) layer. Contact the opposite ends of the patterned magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer, each of the stacks including a first Anti-Ferro-Magnetic (AFM) layer and a first lead layer. Then anneal the device in the presence of a longitudinal external magnetic field. Next, form a second patterned magnetoresistive (MR) layer above the previous structure. Contact the opposite ends of the second patterned magnetoresistive (MR) layer with a second pair of stacks defining a second track width of the second patterned magnetoresistive (MR) layer. Each of the second pair of stacks includes spacer layer composed of a metal, a Ferro-Magnetic (FM) layer, a second Anti-Ferro-Magnetic (AFM) layer and a second lead layer. Then anneal the device in the presence of a second longitudinal external magnetic field.
摘要翻译：用于形成纵向磁偏置双条磁阻（DSMR）传感器元件的方法包括形成第一图案化磁阻（MR）层。用限定第一磁阻（MR）层的轨道宽度的第一对叠层接触图案化磁阻（MR）层的相对端，每个堆叠包括第一抗铁磁（AFM）层和第一铅层。然后在存在纵向外部磁场的情况下退火该器件。接下来，在先前的结构之上形成第二图案化磁阻（MR）层。用限定第二图案化磁阻（MR）层的第二磁道宽度的第二对叠层接触第二图案化磁阻（MR）层的相对端。第二对堆叠中的每一个包括由金属，铁磁（FM）层，第二抗铁磁（AFM）层和第二引线层组成的间隔层。然后在存在第二纵向外部磁场的情况下退火该器件。

4. 发明授权

US06430015B2 Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration 失效
标题翻译：具有反并联交换配置的带状磁阻（SMR）和双条磁阻（DSMR）头的制造方法
公开(公告)号：US06430015B2
公开(公告)日：2002-08-06
申请号：US09773743
申请日：2001-02-02
申请人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
发明人： Kochan Ju , Mao-Min Chen , Cheng T. Horng , Jei-Wei Chang
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B2005/3996
摘要： A longitudinally magnetically biased dual stripe magnetoresistive (DSMR) sensor element comprises a first patterned magnetoresistive (MR) layer. There are contacts at the opposite ends of the patterned magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer, each of the stacks including a first Anti-Ferro-Magnetic (AFM) layer and a first lead layer. With the first MR layer in place the device was annealed in the presence of a longitudinal external magnetic field. A second patterned magnetoresistive (MR) layer was formed above the previous structure. There are contacts at the opposite ends of the second patterned magnetoresistive (MR) layer with a second pair of stacks defining a second track width of the second patterned magnetoresistive (MR) layer. Each of the second pair of stacks includes spacer layer is composed of a metal, a Ferro-Magnetic (FM) layer, a second Anti-Ferro-Magnetic (AFM) layer and a second lead layer. With the second MR layer in place, the device was annealed in the presence of a second longitudinal external magnetic field.
摘要翻译：纵向磁偏置双条磁阻（DSMR）传感器元件包括第一图案化磁阻（MR）层。在图案化磁阻（MR）层的相对端处存在触点，第一对叠层限定第一磁阻（MR）层的轨道宽度，第一对堆叠限定第一磁阻（MR）的磁道宽度，层，每个堆叠包括第一抗铁磁（AFM）层和第一引线层。在第一MR层就位的情况下，器件在存在纵向外部磁场的情况下退火。在先前结构之上形成第二图案化磁阻（MR）层。在第二图案化磁阻（MR）层的相对端具有限定第二图案化磁阻（MR）层的第二磁道宽度的第二对叠层的触点。第二对堆叠中的每一个包括间隔层由金属，铁磁（FM）层，第二抗铁磁（AFM）层和第二引线层组成。在第二MR层就位的情况下，器件在第二纵向外部磁场的存在下退火。

5. 发明授权

US06775903B2 Method for fabricating a top magnetoresistive sensor element having a synthetic pinned layer 失效
标题翻译：用于制造具有合成固定层的顶部磁阻传感器元件的方法
公开(公告)号：US06775903B2
公开(公告)日：2004-08-17
申请号：US09953546
申请日：2001-09-17
申请人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
发明人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F10/3295 , Y10T29/49032 , Y10T29/49034 , Y10T29/49039 , Y10T29/49044 , Y10T29/49055
摘要： A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve configuration are separated by a Ru spacer layer approximately 3 angstroms thick, while the two layers in the bottom spin valve configuration are separated by a Rh spacer layer approximately 5 angstroms thick. This allows the use of an ultra thin MnPt antiferromagnetic pinning layer of thickness between approximately 80 and approximately 150 angstroms. The sensor structure produced thereby is suitable for high density applications.
摘要翻译：用于形成顶部和底部自旋阀传感器和如此形成的传感器的方法，所述传感器具有强耦合的SyAP钉扎层和超薄反铁磁钉扎层。包括顶阀配置中的SyAP钉扎层的两个强耦合铁磁层由大约3埃厚的Ru隔离层隔开，而底部自旋阀结构中的两个层被大约5埃厚的Rh间隔层隔开。这允许使用厚度在大约80和大约150埃之间的超薄MnPt反铁磁性钉扎层。由此生产的传感器结构适用于高密度应用。

6. 发明授权

US06972934B2 Synthetic anti-parallel spin valve with thin AFM layer for very high density application 失效
标题翻译：具有薄AFM层的合成反并联自旋阀，用于非常高密度的应用
公开(公告)号：US06972934B2
公开(公告)日：2005-12-06
申请号：US10883930
申请日：2004-07-02
申请人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
发明人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/14 , H01F10/16 , H01F10/32 , H01F41/14 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F10/3295 , Y10T29/49032 , Y10T29/49034 , Y10T29/49039 , Y10T29/49044 , Y10T29/49055
摘要： A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve configuration are separated by a Ru spacer layer approximately 3 angstroms thick, while the two layers in the bottom spin valve configuration are separated by a Rh spacer layer approximately 5 angstroms thick. This allows the use of an ultra thin MnPt antiferromagnetic pinning layer of thickness between approximately 80 and approximately 150 angstroms. The sensor structure produced thereby is suitable for high density applications.
摘要翻译：用于形成顶部和底部自旋阀传感器和如此形成的传感器的方法，所述传感器具有强耦合的SyAP钉扎层和超薄反铁磁钉扎层。包括顶阀配置中的SyAP钉扎层的两个强耦合铁磁层由大约3埃厚的Ru隔离层隔开，而底部自旋阀结构中的两个层被大约5埃厚的Rh间隔层隔开。这允许使用厚度在大约80和大约150埃之间的超薄MnPt反铁磁性钉扎层。由此生产的传感器结构适用于高密度应用。

7. 发明授权

US06999286B2 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads 失效
公开(公告)号：US06999286B2
公开(公告)日：2006-02-14
申请号：US11091099
申请日：2005-03-28
申请人： Bernard Dieny , Cheng T. Horng , Kochan Ju , Min Li , Simon Liao
发明人： Bernard Dieny , Cheng T. Horng , Kochan Ju , Min Li , Simon Liao
IPC分类号： G11B5/127
CPC分类号： H01F41/302 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , H01F10/3259 , H01F10/3272
摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

8. 发明授权

US06228276B1 Method of manufacturing magnetoresistive (MR) sensor element with sunken lead structure 失效
标题翻译：具有凹陷引线结构的磁阻（MR）传感器元件的制造方法
公开(公告)号：US06228276B1
公开(公告)日：2001-05-08
申请号：US09244882
申请日：1999-02-05
申请人： Kochan Ju , Jei-Wei Chang , Cheng T. Horng
发明人： Kochan Ju , Jei-Wei Chang , Cheng T. Horng
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/09 , G11B5/3163 , G11B5/3903 , G11B5/3967 , G11B2005/3996
摘要： A method for forming a magnetoresistive (MR) sensor element. There is first provided a substrate. There is then formed over the substrate a seed layer. There is then formed contacting a pair of opposite ends of the seed layer a pair of patterned conductor lead layer structures. There is then etched, while employing an ion etch method, the seed layer and the pair of patterned conductor lead layer structures to form an ion etched seed layer and a pair of ion etched patterned conductor lead layer structures. Finally, there is then formed upon the ion etched seed layer and the pair of ion etched patterned conductor lead layers structures a magnetoresistive (MR) layered structure. Within the magnetoresistive (MR) sensor element, the pair of patterned conductor lead layer structures may be formed within a pair of recesses within an ion etch recessed dielectric isolation layer.
摘要翻译：一种用于形成磁阻（MR）传感器元件的方法。首先提供基板。然后在衬底上形成种子层。然后形成一对图案化的导体引线层结构使种子层的一对相对端接触。然后蚀刻，同时采用离子蚀刻方法，种子层和一对图案化的导体引线层结构，以形成离子蚀刻种子层和一对离子蚀刻图案化导体引线层结构。最后，然后形成在离子蚀刻种子层上，并且一对离子蚀刻图案化的导体引线层构成磁阻（MR）层状结构。在磁阻（MR）传感器元件内，一对图案化的导体引线层结构可以形成在离子蚀刻凹陷的介电隔离层内的一对凹槽内。

9. 发明授权

US06590751B1 Anisotropic magnetoresistive (MR) sensor element with enhanced magnetoresistive (MR) coefficient 有权
标题翻译：具有增强磁阻（MR）系数的各向异性磁阻（MR）传感器元件
公开(公告)号：US06590751B1
公开(公告)日：2003-07-08
申请号：US09408700
申请日：1999-09-30
申请人： Cheng T. Horng , Rongfu Xiao , Ru-Ying Tong , Jei-Wei Chang , Kochan Ju , Simon H. Liao
发明人： Cheng T. Horng , Rongfu Xiao , Ru-Ying Tong , Jei-Wei Chang , Kochan Ju , Simon H. Liao
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/096 , G11B5/3903 , G11B5/3954
摘要： A method for forming an anisotropic magnetoresistive (MR) sensor element, and the anisotropic magnetoresistive (MR) sensor element formed in accord with the method. In accord with the method, there is first provided a substrate. There is then formed over the substrate a seed layer formed of a magnetoresistive (MR) resistivity sensitivity enhancing material selected from the group consisting or nickel-chromium alloys and nickel-iron-chromium alloys. There is then formed over the seed layer a nickel oxide material layer. Finally, there is then formed over the nickel oxide material layer a magnetoresistive (MR) layer. The method contemplates the anisotropic magnetoresistive (MR) sensor element formed in accord with the method. The nickel oxide material layer provides the anisotropic magnetoresistive (MR) sensor element with an enhanced magnetoresistive (MR) resistivity sensitivity.
摘要翻译：一种用于形成各向异性磁阻（MR）传感器元件的方法和根据该方法形成的各向异性磁阻（MR）传感器元件。根据该方法，首先提供基板。然后在衬底上形成由选自镍铬合金和镍 - 铁 - 铬合金的磁阻（MR）电阻率敏感度增强材料形成的晶种层。然后在种子层上形成氧化镍材料层。最后，在氧化镍材料层上形成磁阻（MR）层。该方法考虑了根据该方法形成的各向异性磁阻（MR）传感器元件。氧化镍材料层提供具有增强的磁阻（MR）电阻率敏感性的各向异性磁阻（MR）传感器元件。

10. 发明授权

US06396671B1 Ruthenium bias compensation layer for spin valve head and process of manufacturing 失效
标题翻译：用于自旋阀头的钌偏置补偿层和制造过程
公开(公告)号：US06396671B1
公开(公告)日：2002-05-28
申请号：US09525670
申请日：2000-03-15
申请人： Cheng T. Horng , Mao-Min Chen , Kochan Ju , Min Li , Simon H. Liao , Ku-Ying Tong
发明人： Cheng T. Horng , Mao-Min Chen , Kochan Ju , Min Li , Simon H. Liao , Ku-Ying Tong
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3143 , G11B5/3903 , H01F10/3268 , H01F10/3295 , H01F41/325 , Y10T29/49044
摘要： A spin valve structure, and method for manufacturing it, are described. The valve is subject to only small bias point shifts by sense current fields while at the same time has good GMR characteristics. This is achieved by introducing a layer of about 15 Angstroms of ruthenium between the seed layer and the free layer. This acts as an effective bias control layer with the added benefit of providing interfaces (to both the seed and the free layer) that are highly favorable to specular reflection of the conduction electrons. The HCP crystal structure of this ruthenium layer also improves the crystalline quality of the free layer thereby improving its performance with respect to the GMR ratio.
摘要翻译：自旋阀结构及其制造方法。阀门只能通过感应电流场进行小的偏移点偏移，同时具有良好的GMR特性。这通过在种子层和自由层之间引入约15埃的钌层来实现。这充当有效的偏置控制层，具有提供对传导电子的镜面反射非常有利的界面（对种子和自由层）的附加益处。该钌层的HCP晶体结构也改善了自由层的结晶质量，从而提高了其相对于GMR比的性能。

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