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    • 1. 发明授权
    • Integration of remote plasma generator with semiconductor processing chamber
    • 远程等离子体发生器与半导体处理室的集成
    • US06387207B1
    • 2002-05-14
    • US09561325
    • 2000-04-28
    • Karthik JanakiramanKelly FongChen-An ChenPaul LeRong PanShankar Venkataraman
    • Karthik JanakiramanKelly FongChen-An ChenPaul LeRong PanShankar Venkataraman
    • H01L2100
    • H01J37/3244H01J37/32357H01J37/32458
    • A compact, self-contained remote plasma generator is mounted on the lid of a semiconductor processing chamber to form an integrated substrate processing system. The remote plasma generator is activated in a clean operation to generate cleaning plasma species to provide better cleaning of the chamber and lower perfluorocarbon emissions than in situ plasma clean processes. A three-way valve is adjustable to control gas flow to the chamber. During the clean operation, the three-way valve directs a cleaning plasma precursor from a first gas line to the remote plasma generator to generate cleaning plasma species which are flowed to the chamber for cleaning deposits therein. During a deposition process, the three-way valve directs a first process gas from the flat gas line to the chamber, bypassing the remote plasma generator. The first process gas is typically mixed with a second process gas supplied from a second gas line in a mixing device prior to entering the chamber for depositing a layer on a substrate disposed therein.
    • 紧凑的独立式远程等离子体发生器安装在半导体处理室的盖上以形成集成的基板处理系统。 远程等离子体发生器在清洁操作中被激活以产生清洁等离子体物质,以提供比原位等离子体清洁过程更好的清洁室和降低全氟化碳排放。 三通阀是可调节的,以控制气体流向腔室。 在清洁操作期间,三通阀将清洁等离子体前体从第一气体管线引导到远程等离子体发生器,以产生清洗等离子体物质,其流入室以清除其中的沉积物。 在沉积过程中,三通阀将来自平坦气体管线的第一工艺气体引导到旁路远程​​等离子体发生器。 在进入室之前,第一工艺气体通常与从混合装置中的第二气体管线供应的第二工艺气体混合,以在其上设置的衬底上沉积一层。
    • 2. 发明授权
    • Edge rings for electrostatic chucks
    • 静电卡盘的边缘环
    • US08469368B2
    • 2013-06-25
    • US12540186
    • 2009-08-12
    • Ian Jared KenworthyKelly FongMichael C. Kellogg
    • Ian Jared KenworthyKelly FongMichael C. Kellogg
    • B23B31/28
    • H01L21/6831H01L21/68735Y10T279/23
    • A disclosed device for use with an electrostatic chuck configured to hold a substrate in a plasma environment comprises an edge ring configured to be placed either in contact with portions of only a ceramic top piece, a base plate, or coupled to the base plate through a plurality of pins and pin slots. The edge ring is further configured to be concentric with the ceramic top piece. In one embodiment, the edge ring includes an inner edge having an edge step arranged to provide mechanical coupling between the edge ring and the outer periphery of the ceramic top piece. The edge ring further includes an outer edge and a flat portion located between the inner edge and the outer edge. The flat portion is arranged to be both horizontal when the edge ring is placed around the outer periphery of the ceramic top piece and parallel to the substrate.
    • 用于静电卡盘的公开的装置被配置为将基板保持在等离子体环境中包括边缘环,该边缘环被配置成与陶瓷顶部件,基板的部分接触,或者通过一个 多个引脚和引脚插槽。 边缘环进一步构造成与陶瓷顶部件同心。 在一个实施例中,边缘环包括具有边缘台阶的内边缘,其边缘台阶布置成在边缘环和陶瓷顶部件的外周边之间提供机械联接。 边缘环还包括外边缘和位于内边缘和外边缘之间的平坦部分。 当边缘环绕陶瓷顶片的外周放置并平行于基底时,平坦部分布置成水平的。
    • 3. 发明授权
    • Low profile thick film heaters in multi-slot bake chamber
    • 低槽厚膜加热器在多槽烘烤室
    • US06506994B2
    • 2003-01-14
    • US09882769
    • 2001-06-15
    • Yen-Kun Victor WangMark FodorChen-An ChenHimanshu PokharnaSon T. NguyenKelly FongInna Shmurun
    • Yen-Kun Victor WangMark FodorChen-An ChenHimanshu PokharnaSon T. NguyenKelly FongInna Shmurun
    • F27B514
    • H01L21/67748C23C16/0209C23C16/54C30B25/10C30B31/14H01L21/68
    • A heating chamber assembly for heating or maintaining the temperature of at least one wafer, employs thick film heater plates stacked at an appropriate distance to form a slot between each pair of adjacent heater plate surfaces. The heating chamber assembly may be employed adjacent one or more processing chambers to form a preheat station separate from the processing chambers, or may be incorporated in the load lock of one or more such processing chambers. The thick film heater plates are more efficient and have a better response time than conventional heat plates. A chamber surrounding the stack of heater plates is pressure sealable and nay include a purge gas inlet for supply purge gas thereto under pressure. A door to the chamber opens to allow wafers to be inserted or removed and forms a pressure seal upon closing. The slots in the stack are alignable with the door for loading and unloading of wafers. The stack is mounted on a drive shaft that extends through the chamber where it interfaces with a drive that traverses the drive shaft in and out of the chamber to align various slots as desired.
    • 用于加热或保持至少一个晶片的温度的加热室组件使用以适当距离堆叠的厚膜加热器板,以在每对相邻的加热器板表面之间形成狭槽。 加热室组件可以在一个或多个处理室附近使用以形成与处理室分离的预热站,或者可以结合在一个或多个这样的处理室的装载锁中。 厚膜加热器板比传统加热板更有效,响应时间更长。 围绕堆叠的加热器板的室是可压力密封的,并且不包括用于在压力下向其供应吹扫气体的吹扫气体入口。 通向室的门打开以允许晶片被插入或移除,并且在关闭时形成压力密封。 堆叠中的槽可与门对准,用于装载和卸载晶片。 该堆叠安装在驱动轴上,该驱动轴延伸穿过该室,在该驱动轴处与驱动轴相接合,该驱动器穿过驱动轴进出腔室,以根据需要对准各种槽。
    • 4. 发明申请
    • EDGE RINGS FOR ELECTROSTATIC CHUCKS
    • 用于静电切割机的边缘环
    • US20100044974A1
    • 2010-02-25
    • US12540186
    • 2009-08-12
    • Ian Jared KenworthyKelly FongMichael C. Kellogg
    • Ian Jared KenworthyKelly FongMichael C. Kellogg
    • B23B31/28
    • H01L21/6831H01L21/68735Y10T279/23
    • A disclosed device for use with an electrostatic chuck configured to hold a substrate in a plasma environment comprises an edge ring configured to be placed either in contact with portions of only a ceramic top piece, a base plate, or coupled to the base plate through a plurality of pins and pin slots. The edge ring is further configured to be concentric with the ceramic top piece. In one embodiment, the edge ring includes an inner edge having an edge step arranged to provide mechanical coupling between the edge ring and the outer periphery of the ceramic top piece. The edge ring further includes an outer edge and a flat portion located between the inner edge and the outer edge. The flat portion is arranged to be both horizontal when the edge ring is placed around the outer periphery of the ceramic top piece and parallel to the substrate.
    • 用于静电卡盘的公开的装置被配置为将基板保持在等离子体环境中包括边缘环,该边缘环被配置成与陶瓷顶部件,基板的部分接触,或者通过一个 多个引脚和引脚插槽。 边缘环还被构造成与陶瓷顶部件同心。 在一个实施例中,边缘环包括具有边缘台阶的内边缘,其边缘台阶布置成在边缘环和陶瓷顶部件的外周边之间提供机械联接。 边缘环还包括外边缘和位于内边缘和外边缘之间的平坦部分。 当边缘环绕陶瓷顶片的外周放置并平行于基底时,平坦部分布置成水平的。