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1. 发明申请

US20070266453A1 Generation of Plants with Improved Drought Tolerance 有权
标题翻译：具有改善耐旱性的植物的生成
公开(公告)号：US20070266453A1
公开(公告)日：2007-11-15
申请号：US10562106
申请日：2004-06-23
申请人： Catherine Anderson , Stephen Lee , Kerrie Powell , Pilar Puente , Jennifer Almond , Philip Timmons , Vincent Paul Mary Wingate
发明人： Catherine Anderson , Stephen Lee , Kerrie Powell , Pilar Puente , Jennifer Almond , Philip Timmons , Vincent Paul Mary Wingate
IPC分类号： C12N15/82 , A01H5/00
CPC分类号： C07K14/415 , C12N15/8273
摘要： The present invention is directed to plants that display a drought tolerance phenotype due to altered expression of a DR03 nucleic acid. The invention is further directed to methods of generating plants with a drought tolerance phenotype.
摘要翻译：本发明涉及由于改变DR03核酸表达而显示耐旱表型的植物。本发明进一步涉及产生具有耐旱表型的植物的方法。

2. 发明申请

US20070266454A1 Generation of Plants with Improved Drought Tolerance 有权
标题翻译：具有改善耐旱性的植物的生成
公开(公告)号：US20070266454A1
公开(公告)日：2007-11-15
申请号：US10562309
申请日：2004-06-23
申请人： Catherine Anderson , Stephen Lee , Kerrie Powell , Pilar Puente , Jennifer Almond , Philip Timmons , Vincent Wingate
发明人： Catherine Anderson , Stephen Lee , Kerrie Powell , Pilar Puente , Jennifer Almond , Philip Timmons , Vincent Wingate
IPC分类号： A01H5/00
CPC分类号： C12N15/8273
摘要： The present invention is directed to plants that display a drought tolerance phenotype due to altered expression of a DR05 nucleic acid. The invention is further directed to methods of generating plants with a drought tolerance phenotype.
摘要翻译：本发明涉及由于DR05核酸表达改变而显示耐旱表型的植物。本发明进一步涉及产生具有耐旱表型的植物的方法。

3. 发明授权

US09397357B2 Membrane electrode assembly comprising a catalyst migration barrier layer 有权
标题翻译：膜电极组件包括催化剂迁移阻挡层
公开(公告)号：US09397357B2
公开(公告)日：2016-07-19
申请号：US13087476
申请日：2011-04-15
申请人： Dmitri Bessarabov , Sumit Kundu , Stephen Lee , Scott McDermid
发明人： Dmitri Bessarabov , Sumit Kundu , Stephen Lee , Scott McDermid
IPC分类号： H01M8/1004 , H01M8/10 , H01M4/86
CPC分类号： H01M8/1004 , H01M4/8657 , H01M2300/0082 , H01M2300/0094 , Y02E60/521
摘要： A membrane electrode assembly for a fuel cell is disclosed, which comprises at least one porous ionomer containing layer disposed at the interface between the cathode electrocatalyst material and the ion exchange membrane of the fuel cell. The porous ionomer containing layer comprises a catalyst migration impeding compound. The membrane electrode assembly exhibits improved stability against Pt dissolution and Pt-band formation within the ion exchange membrane, hence having improved durability and lifetime performance.
摘要翻译：公开了一种用于燃料电池的膜电极组件，其包括设置在阴极电催化剂材料和燃料电池的离子交换膜之间的界面处的至少一种多孔离子交联聚合物含量层。含多孔离子交联聚合物层包含阻止催化剂迁移的化合物。膜电极组件在离子交换膜内表现出对Pt溶解和Pt带形成的稳定性的改善，因此具有改善的耐久性和寿命性能。

4. 发明授权

US08146018B2 Gesture-based control of multiple game characters and other animated objects 有权
标题翻译：多种游戏角色和其他动画对象的手势控制
公开(公告)号：US08146018B2
公开(公告)日：2012-03-27
申请号：US11464227
申请日：2006-08-14
申请人： Yukimi Shimura , Yoonjoon Lee , Stephen Lee
发明人： Yukimi Shimura , Yoonjoon Lee , Stephen Lee
IPC分类号： G06F3/14
CPC分类号： A63F13/42 , A63F13/10 , A63F13/2145 , A63F13/56 , A63F13/577 , A63F13/92 , A63F2300/1075 , A63F2300/301 , A63F2300/6045 , A63F2300/6623
摘要： Methods and apparatus for controlling movement of multiple independent animated objects such as characters displayed on a display use zone detection and touch stroke direction. A player wishing to move the digital objects can use a stylus or other touch to draw strokes or gestures on the screen. Different strokes can correspond to different types of control inputs. For example, based on where a stroke begins and ends on the screen relative to character position, different animated characters can be selected and controlled. Some strokes control only one animated character to move in a particular direction, whereas other strokes can control multiple objects to move in a coordinated manner.
摘要翻译：用于控制多个独立动画对象的移动的方法和装置，例如显示在显示器上的字符使用区域检测和触摸笔划方向。希望移动数字对象的玩家可以使用触控笔或其他触摸来在屏幕上绘制笔触或手势。不同的笔画可以对应于不同类型的控制输入。例如，根据笔画相对于字符位置开始和结束笔画的位置，可以选择和控制不同的动画角色。一些笔画只控制一个动画角色在特定方向上移动，而其他笔画可以控制多个对象以协调的方式移动。

5. 发明申请

US20100216791A1 PYRIDINYLQUINAZOLINAMINE DERIVATIVES AND THEIR USE AS B-RAF INHIBITORS 审中-公开
标题翻译：吡啶并噻唑啉衍生物及其作为B-RAF抑制剂的用途
公开(公告)号：US20100216791A1
公开(公告)日：2010-08-26
申请号：US12377285
申请日：2007-08-15
申请人： Brian Aquila , Donald J. Cook , Craig Johnstone , Stephen Lee , Paul Lyne , David Alan Rudge , Melissa Vasbinder , Haixia Wang
发明人： Brian Aquila , Donald J. Cook , Craig Johnstone , Stephen Lee , Paul Lyne , David Alan Rudge , Melissa Vasbinder , Haixia Wang
IPC分类号： A61K31/5377 , C07D401/04 , A61K31/517 , A61P35/00 , A61P35/02 , C07D413/14
CPC分类号： C07D401/04 , C07D401/12 , C07D405/12
摘要： The invention relates to chemical compounds of the formula (I) or pharmaceutically acceptable salts thereof, which possess B-Raf inhibitory activity and are accordingly useful for their anti cancer activity and thus in methods of treatment of the human or animal body. The invention also relates to processes for the manufacture of said chemical compounds, to pharmaceutical compositions containing them and to their use in the manufacture of medicaments of use in the production of an anti-cancer effect in a warm blooded animal such as man.
摘要翻译：本发明涉及具有B-Raf抑制活性的式（I）化合物或其药学上可接受的盐，因此可用于其抗癌活性，因此可用于治疗人或动物体的方法。本发明还涉及制备所述化合物的方法，含有它们的药物组合物及其在制备用于在温血动物如人中产生抗癌作用的药物中的用途。

6. 发明申请

US20090173757A1 POURING NOZZLE 审中-公开
标题翻译：呼吸喷嘴
公开(公告)号：US20090173757A1
公开(公告)日：2009-07-09
申请号：US12305366
申请日：2007-06-15
申请人： Stephen Lee , Ian Proudfoot
发明人： Stephen Lee , Ian Proudfoot
IPC分类号： B22D41/50
CPC分类号： B22D41/50
摘要： The invention relates to a pouring nozzle. Such pouring nozzle may be used for the transfer of a metal melt from one (upper) metallurgical vessel to a second (lower) metallurgical vessel, for example for the transfer of a steel melt from a ladle to a tundish.
摘要翻译：本发明涉及一种倾倒嘴。这种倾倒喷嘴可以用于将金属熔体从一个（上）冶金容器转移到第二（下）冶金容器，例如用于将钢熔体从钢包转移到中间包。

7. 发明申请

US20080207616A1 Quinoxalines as B Baf Inhhibitors 审中-公开
标题翻译：喹喔啉作为B Baf抑制剂
公开(公告)号：US20080207616A1
公开(公告)日：2008-08-28
申请号：US11577132
申请日：2005-10-13
申请人： Brian Aquila , Les Dakin , Tracy Deegan , Stephanos Ioannidis , Stephen Lee , Paul Lyne , Timothy Pontz , Mei Su
发明人： Brian Aquila , Les Dakin , Tracy Deegan , Stephanos Ioannidis , Stephen Lee , Paul Lyne , Timothy Pontz , Mei Su
IPC分类号： A61K31/498 , C07D413/12 , C07D403/12 , C07D401/12 , A61K31/5377 , A61P35/00 , C07D407/12 , C07D409/12
CPC分类号： C07D409/14 , C07D241/42 , C07D401/12 , C07D403/12 , C07D405/12 , C07D409/12
摘要： The invention relates to chemical compounds of the formula (I) or pharmaceutically acceptable salts thereof, which possess B Raf inhibitory activity and are accordingly useful for their anti cancer activity and thus in methods of treatment of the human or animal body. The invention also relates to processes for the manufacture of said chemical compounds, to pharmaceutical compositions containing them and to their use in the manufacture of medicaments of use in the production of an anti-cancer effect in a warm blooded animal such as man.
摘要翻译：本发明涉及具有B Raf抑制活性的式（I）化合物或其药学上可接受的盐，因此可用于其抗癌活性，因此可用于治疗人或动物体的方法。本发明还涉及制备所述化合物的方法，含有它们的药物组合物及其在制备用于在温血动物如人中产生抗癌作用的药物中的用途。

8. 发明申请

US20080031069A1 SYSTEM AND METHOD FOR REFRESHING A DRAM DEVICE 有权
标题翻译：用于刷新DRAM器件的系统和方法
公开(公告)号：US20080031069A1
公开(公告)日：2008-02-07
申请号：US11872675
申请日：2007-10-15
申请人： Lee-Lean SHU , Stephen Lee
发明人： Lee-Lean SHU , Stephen Lee
IPC分类号： G11C7/00
CPC分类号： G11C11/406 , G11C11/40603 , G11C11/40611
摘要： The present invention provides a system and method for refreshing a DRAM device without interrupting or inhibiting read and write operations of the DRAM device. The system may includes refresh control circuitry that selectively generates requests to perform refresh operations and a refresh address counter that is coupled to the refresh control circuitry and that generates a refresh address in response to receiving a refresh request. The refresh address corresponds to a word line of the DRAM array to be refreshed. Address control and switching circuitry may be coupled to the refresh control circuitry. The address control and switching circuitry selectively transmits read/write addresses and refresh addresses to the DRAM array, in order to perform refresh operations on the DRAM array without inhibiting read and write operations.
摘要翻译：本发明提供了一种用于刷新DRAM器件而不中断或禁止DRAM器件的读和写操作的系统和方法。系统可以包括选择性地产生执行刷新操作的请求的刷新控制电路和耦合到刷新控制电路的刷新地址计数器，并且响应于接收到刷新请求而产生刷新地址。刷新地址对应于要刷新的DRAM阵列的字线。地址控制和切换电路可以耦合到刷新控制电路。地址控制和切换电路选择性地将读/写地址和刷新地址发送到DRAM阵列，以便对DRAM阵列执行刷新操作，而不会妨碍读和写操作。

9. 发明授权

US07265374B2 Light emitting semiconductor device 失效
标题翻译：发光半导体器件
公开(公告)号：US07265374B2
公开(公告)日：2007-09-04
申请号：US11150370
申请日：2005-06-10
申请人： Stephen Lee , Yury Georgievich Shreter , Yury Toomasovich Rebane , Ruslan Ivanovich Gorbunov
发明人： Stephen Lee , Yury Georgievich Shreter , Yury Toomasovich Rebane , Ruslan Ivanovich Gorbunov
IPC分类号： H01L29/06
CPC分类号： H01L33/22 , Y10S977/759 , Y10S977/76 , Y10S977/761 , Y10S977/773
摘要： A novel NPBL and ANPL light emitting semiconductor device and a method for fabricating the same are provided. In the present invention, plural nano-particles are applied in the active layer of the light emitting semiconductor device, so that the leakage current thereof is reduced. In addition, the provided light emitting semiconductor device fabricated via a planar technology process is microscopically planar, but not planar at micro- and nano-scale. Hence the parasitic wave guiding effect, which suppresses the light extraction efficiency of the light emitting semiconductor device, is destroyed thereby.
摘要翻译：提供了一种新型的NPBL和ANPL发光半导体器件及其制造方法。在本发明中，在发光半导体器件的有源层中施加多个纳米粒子，使其漏电流减少。此外，通过平面技术工艺制造的所提供的发光半导体器件在微观和纳米尺度上是微观平面的，但不是平面的。因此，抑制发光半导体器件的光提取效率的寄生波引导效应被破坏。

10. 发明申请

US20060278880A1 Light emitting semiconductor device 失效
标题翻译：发光半导体器件
公开(公告)号：US20060278880A1
公开(公告)日：2006-12-14
申请号：US11150370
申请日：2005-06-10
申请人： Stephen Lee , Yury Shreter , Yury Rebane , Ruslan Gorbunov
发明人： Stephen Lee , Yury Shreter , Yury Rebane , Ruslan Gorbunov
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , Y10S977/759 , Y10S977/76 , Y10S977/761 , Y10S977/773
摘要： A novel NPBL and ANPL light emitting semiconductor device and a method for fabricating the same are provided. In the present invention, plural nano-particles are applied in the active layer of the light emitting semiconductor device, so that the leakage current thereof is reduced. In addition, the provided light emitting semiconductor device fabricated via a planar technology process is microscopically planar, but not planar at micro- and nano-scale. Hence the parasitic wave guiding effect, which suppresses the light extraction efficiency of the light emitting semiconductor device, is destroyed thereby.
摘要翻译：提供了一种新型的NPBL和ANPL发光半导体器件及其制造方法。在本发明中，在发光半导体器件的有源层中施加多个纳米粒子，使其漏电流减少。此外，通过平面技术工艺制造的所提供的发光半导体器件在微观和纳米尺度上是微观平面的，但不是平面的。因此，抑制发光半导体器件的光提取效率的寄生波引导效应被破坏。

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