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1. 发明授权

US09966296B2 Method of laser separation of the epitaxial film or the epitaxial film layer from the growth substrate of the epitaxial semiconductor structure (variations) 有权
公开(公告)号：US09966296B2
公开(公告)日：2018-05-08
申请号：US14907189
申请日：2016-01-22
申请人： Yury Georgievich Shreter , Yury Toomasovich Rebane , Aleksey Vladimirovich Mironov
发明人： Yury Georgievich Shreter , Yury Toomasovich Rebane , Aleksey Vladimirovich Mironov
IPC分类号： H01L21/268 , H01L21/683 , H01L21/02 , H01L21/762 , H01L33/00
CPC分类号： H01L21/6835 , H01L21/02518 , H01L21/02527 , H01L21/02529 , H01L21/02532 , H01L21/0254 , H01L21/02546 , H01L21/02551 , H01L21/0257 , H01L21/02634 , H01L21/268 , H01L21/76254 , H01L33/0079 , H01L2221/68381
摘要： The present invention proposes variations of the laser separation method allowing separating homoepitaxial films from the substrates made from the same crystalline material as the epitaxial film. This new method of laser separation is based on using the selective doping of the substrate and epitaxial film with fine donor and acceptor impurities. In selective doping, concentration of free carries in the epitaxial film and substrate may essentially differ and this can lead to strong difference between the light absorption factors in the infrared region near the residual beams region where free carriers and phonon-plasmon interaction of the optical phonons with free carriers make an essential contribution to infrared absorption of the optical phonons. With the appropriate selection of the doping levels and frequency of infrared laser radiation, it is possible to achieve that laser radiation is absorbed in general in the region of strong doping near the interface substrate-homoepitaxial film. When scanning the interface substrate-homoepitaxial film with the focused laser beam of sufficient power, thermal decomposition of the semiconductor crystal takes place with subsequent separation of the homoepitaxial film. The advantage of the proposed variations of the method for laser separation of epitaxial films in comparison with the known ones is in that it allows the separation of homoepitaxial films from the substrates, i.e., homoepitaxial films having the same width of the forbidden gap as the initial semiconductor substrate has. The proposed variations of the method can be used for separation of the epitaxial films.

2. 发明申请

US20160172228A1 Method of laser separation of the epitaxial film or the epitaxial film layer from the growth substrate of the epitaxial semiconductor structure (variations) 审中-公开
标题翻译：从外延半导体结构的生长衬底激光分离外延膜或外延膜层的方法（变化）
公开(公告)号：US20160172228A1
公开(公告)日：2016-06-16
申请号：US14907189
申请日：2016-01-22
申请人： Yury Georgievich Shreter , Yury Toomasovich Rebane , Aleksey Vladimirovich Mironov
发明人： Yury Georgievich Shreter , Yury Toomasovich Rebane , Aleksey Vladimirovich Mironov
IPC分类号： H01L21/683 , H01L21/268 , H01L21/02
CPC分类号： H01L21/6835 , H01L21/02518 , H01L21/02527 , H01L21/02529 , H01L21/02532 , H01L21/0254 , H01L21/02546 , H01L21/02551 , H01L21/0257 , H01L21/02634 , H01L21/268 , H01L21/76254 , H01L33/0079 , H01L2221/68381
摘要： The present invention proposes variations of the laser separation method allowing separating homoepitaxial films from the substrates made from the same crystalline material as the epitaxial film. This new method of laser separation is based on using the selective doping of the substrate and epitaxial film with fine donor and acceptor impurities. In selective doping, concentration of free carries in the epitaxial film and substrate may essentially differ and this can lead to strong difference between the light absorption factors in the infrared region near the residual beams region where free carriers and phonon-plasmon interaction of the optical phonons with free carriers make an essential contribution to infrared absorption of the optical phonons. With the appropriate selection of the doping levels and frequency of infrared laser radiation, it is possible to achieve that laser radiation is absorbed in general in the region of strong doping near the interface substrate-homoepitaxial film. When scanning the interface substrate-homoepitaxial film with the focused laser beam of sufficient power, thermal decomposition of the semiconductor crystal takes place with subsequent separation of the homoepitaxial film. The advantage of the proposed variations of the method for laser separation of epitaxial films in comparison with the known ones is in that it allows the separation of homoepitaxial films from the substrates, i.e., homoepitaxial films having the same width of the forbidden gap as the initial semiconductor substrate has. The proposed variations of the method can be used for separation of the epitaxial films.
摘要翻译：本发明提出了激光分离方法的变化，其允许从与外延膜相同的结晶材料制成的基板上分离同质外延膜。这种新的激光分离方法是基于使用具有精细施主和受主杂质的衬底和外延膜的选择性掺杂。在选择性掺杂中，外延膜和衬底中的自由载流子的浓度可能基本上不同，并且这可能导致残余光束区域附近的红外区域中的光吸收因子之间的强烈差异，其中自由载流子和光子声子的声子等离子体相互作用自由载体对光学声子的红外吸收作出重要贡献。通过适当选择红外激光辐射的掺杂水平和频率，可以实现激光辐射通常在界面衬底 - 同质外延膜附近的强掺杂区域被吸收。当用具有足够功率的聚焦激光束扫描界面基底 - 同轴外延膜时，半导体晶体的热分解随后进行同质外延膜的分离。与已知的相比，所提出的用于激光分离外延膜的方法的变化的优点在于它允许从基板分离同质外延膜，即具有与初始的相同宽度的禁止间隙的同质外延膜半导体衬底具有。所提出的方法的变型可用于分离外延膜。

3. 发明申请

US20170110853A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH AN AXIS OF SYMMETRY 审中-公开
公开(公告)号：US20170110853A1
公开(公告)日：2017-04-20
申请号：US15123381
申请日：2015-03-05
申请人： Yury Georgievich Shreter , Yury Toomasovich Rebane , Aleksey Vladimirovich Mironov
发明人： Yury Georgievich Shreter , Yury Toomasovich Rebane , Aleksey Vladimirovich Mironov
IPC分类号： H01S5/40 , H01S5/343 , F21V9/16 , H01S5/20
CPC分类号： H01S5/4043 , F21V9/30 , F21Y2115/30 , H01S5/005 , H01S5/1071 , H01S5/1075 , H01S5/2031 , H01S5/34333 , H01S5/4018 , H01S5/4056
摘要： The present invention proposes a semiconductor light-emitting device having an axis of symmetry, the device including two or more laser diodes, each of the laser diodes has an axis of symmetry, wherein the laser diodes are arranged in series on the axis of symmetry of the light-emitting device in such a way that their axes of symmetry coincide, wherein faces of the laser diodes are connected so that they are in electric and mechanic contact and form a bar of the laser diodes, a directional pattern of radiation thereof has an axis of symmetry coinciding with the axis of symmetry of the light-emitting device. The proposed light-emitting device can be used in laser lamps of white light for exciting phosphors since it provides a high degree of flare of cylindrical surfaces.

4. 发明授权

US07023892B2 Semiconductor laser based on matrix, array or single triangle optical cavity with spatially distributed current injection 失效
公开(公告)号：US07023892B2
公开(公告)日：2006-04-04
申请号：US10038488
申请日：2002-01-03
申请人： Wang Nang Wang , Yury Georgievich Shreter , Yury Toomasovich Rebane
发明人： Wang Nang Wang , Yury Georgievich Shreter , Yury Toomasovich Rebane
IPC分类号： A01S5/00
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/1071 , H01S5/2027 , H01S2301/166
摘要： The invention provides a method and device for light generation wherein the device comprises a lower electrode, a substrate formed on the lower electrode, a triangle mesa structure formed on the substrate for lateral confinement of light, a triangle optical cavity formed in the mesa structure, an upper electrode formed on the mesa structure, and a plurality of contact spots formed on the upper electrode corresponding to the maxima of optical field intensity for at least one optical mode on a lateral plane in the triangle optical cavity. Another embodiment of the device according to the invention further comprises a plurality of triangle mesa structures, along with a light output structure for directing and controlling light output from the device, which are formed on the substrate in various topologies such as a matrix or an array.

5. 发明授权

US07011711B2 Chemical vapor deposition reactor 失效
标题翻译：化学气相沉积反应器
公开(公告)号：US07011711B2
公开(公告)日：2006-03-14
申请号：US10445233
申请日：2003-05-23
申请人： Yury Georgievich Shreter , Yury Toomasovich Rebane , Ruslan Ivanovich Gorbunov , Sergey Igorevich Stepanov , Vladislav Evgenievich Bougrov , Vladimir Nikolaev , Maxim Nikolaevich Blashenkov , Alexander Nikolaevich Andreev , Stephen Sen-Tien Lee
发明人： Yury Georgievich Shreter , Yury Toomasovich Rebane , Ruslan Ivanovich Gorbunov , Sergey Igorevich Stepanov , Vladislav Evgenievich Bougrov , Vladimir Nikolaev , Maxim Nikolaevich Blashenkov , Alexander Nikolaevich Andreev , Stephen Sen-Tien Lee
IPC分类号： C23C16/00 , C23C16/455 , C23C16/452 , C23C16/34
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45559 , C23C16/45568 , C23C16/45591 , C23C16/46 , C30B25/02 , C30B25/14 , C30B29/406
摘要： A chemical vapor deposition reactor for depositing a thin film on at least a substrate through a reaction between a vertical input reagent gas flow and the at least a substrate is provided, in which a vertical output reagent gas flow is produced after the reaction. The reactor includes a vertical tube, at least a reaction chamber located inside the vertical tube, an input flow baffle located on the at least a reaction chamber, and at least a gas exit installed on the at least a reaction chamber for exhausting the vertical input reagent gas flow and the vertical output reagent gas flow. In addition, the substrate is located at the bottom of the at least a reaction chamber. The provided reactors allow the achievement of more efficient heating process, lower gas consumption and higher growth uniformity than the conventional reactors.
摘要翻译：提供一种化学气相沉积反应器，用于通过垂直输入反应气流与至少一基板之间的反应在至少一基板上沉积薄膜，其中在反应之后产生垂直输出反应气流。反应器包括垂直管，位于垂直管内部的至少一个反应室，位于至少一个反应室上的输入流动挡板，以及至少一个安装在至少一个反应室上用于排出垂直输入的气体出口反应气流和垂直输出反应气流。另外，衬底位于至少一个反应室的底部。所提供的反应器允许实现比常规反应器更有效的加热过程，更低的气体消耗和更高的生长均匀性。

6. 发明授权

US06924511B2 Vertical cavity surface emitting semiconductor laser with triangle prism optical cavity resonator 有权
标题翻译：垂直腔表面发射半导体激光器与三角棱镜光腔谐振器
公开(公告)号：US06924511B2
公开(公告)日：2005-08-02
申请号：US10038510
申请日：2002-01-03
申请人： Wang Nang Wang , Yury Georgievich Shreter , Yury Toomasovich Rebane
发明人： Wang Nang Wang , Yury Georgievich Shreter , Yury Toomasovich Rebane
IPC分类号： H01L33/10 , H01L33/20 , H01S5/02 , H01S5/10 , H01S5/18 , H01S5/183 , H01S5/187 , H01S5/22 , H01S5/343 , H01L27/15
CPC分类号： H01S5/1835 , B82Y20/00 , H01L33/105 , H01L33/20 , H01S5/0071 , H01S5/0213 , H01S5/1028 , H01S5/1071 , H01S5/22 , H01S5/34326 , H01S5/34333
摘要： The invention provides a method and device for light generation wherein an embodiment of the device comprises a lower electrode, a conducting substrate formed on the lower electrode, and a triangle mesa structure having an optical cavity formed on the substrate. The triangle mesa structure (which can also be truncated) further comprises an active layer, a lower conducting mirror and an upper conducting mirror for vertical confinement of light in the optical cavity, a contact layer formed on the upper mirror, a metallic contact formed on the contact layer. An electrical current is applied to the device according to the invention through the metallic contact linked to the contact layer, and subsequently to the lower electrode through the lower mirror and the conducting substrate. The applied current results in light generation in the active layer with vertical light output through the metallic contact. A corresponding light generation method is also disclosed herein.
摘要翻译：本发明提供了一种用于发光的方法和装置，其中器件的一个实施例包括下电极，形成在下电极上的导电衬底，以及在衬底上形成有光腔的三角形台面结构。三角形台面结构（其也可以截短）还包括有源层，下导电反射镜和用于在光学腔中垂直限制光的上导电镜，形成在上反射镜上的接触层，形成在接触层。根据本发明的器件通过与接触层连接的金属接触，随后通过下反射镜和导电衬底向下电极施加电流。施加的电流导致有源层中的光产生，通过金属触点具有垂直的光输出。本文还公开了相应的光生成方法。

7. 发明授权

US11103960B2 Method of separating surface layer of semiconductor crystal using a laser beam perpendicular to the separating plane 有权
公开(公告)号：US11103960B2
公开(公告)日：2021-08-31
申请号：US16262453
申请日：2019-01-30
申请人： Yury Georgievich Shreter , Yury Toomasovich Rebane , Aleksey Vladimirovich Mironov
发明人： Yury Georgievich Shreter , Yury Toomasovich Rebane , Aleksey Vladimirovich Mironov
IPC分类号： B23K26/57 , B23K26/00 , B23K26/364 , B23K26/0622 , B23K26/40 , B28D5/00 , C30B29/40 , C30B33/06 , B23K26/53 , B23K26/38 , B23K101/40 , B23K103/00 , H01L33/00
摘要： This invention provides two variations of methods of separating a surface layer of the semiconductor crystal. In the second variation of the method, pulse laser emission is generated; a focused laser beam is directed onto the crystal in such a way that focus is placed in the layer separation plane perpendicular the axis of the beam, a laser beam is moved in such a way that focus is moved in the layer separation plane with forming the non-overlapping local regions with a disturbed topology of the crystal structure and with reduced interatomic bonds, wherein the local regions is distributed over the whole plane, an external action disturbing the reduced interatomic bonds is applied to the separable layer. The invention allows separating flat lateral surface layers from semiconductor crystals, and thin semiconductor washes from cylindrical semiconductor boules.

8. 发明申请

US20190160598A1 Method of Separating Surface Layer of Semiconductor Crystal Using a Laser Beam Perpendicular to the Separating Plane 审中-公开
公开(公告)号：US20190160598A1
公开(公告)日：2019-05-30
申请号：US16262453
申请日：2019-01-30
申请人： Yury Georgievich Shreter , Yury Toomasovich Rebane , Aleksey Vladimirovich Mironov
发明人： Yury Georgievich Shreter , Yury Toomasovich Rebane , Aleksey Vladimirovich Mironov
IPC分类号： B23K26/57 , B23K26/00 , C30B29/40 , C30B33/06 , B23K26/38 , B23K26/53 , B23K26/0622 , B23K26/364 , B28D5/00 , B23K26/40
摘要： This invention provides two variations of methods of separating a surface layer of the semiconductor crystal. In the second variation of the method, pulse laser emission is generated; a focused laser beam is directed onto the crystal in such a way that focus is placed in the layer separation plane perpendicular the axis of the beam, a laser beam is moved in such a way that focus is moved in the layer separation plane with forming the non-overlapping local regions with a disturbed topology of the crystal structure and with reduced interatomic bonds, wherein the local regions is distributed over the whole plane, an external action disturbing the reduced interatomic bonds is applied to the separable layer. The invention allows separating flat lateral surface layers from semiconductor crystals, and thin semiconductor washes from cylindrical semiconductor boules.

9. 发明授权

US09948065B2 Semiconductor light-emitting device with an axis of symmetry 有权
公开(公告)号：US09948065B2
公开(公告)日：2018-04-17
申请号：US15123381
申请日：2015-03-05
申请人： Yury Georgievich Shreter , Yury Toomasovich Rebane , Aleksey Vladimirovich Mironov
发明人： Yury Georgievich Shreter , Yury Toomasovich Rebane , Aleksey Vladimirovich Mironov
IPC分类号： F21V9/16 , H01S5/40 , H01S5/20 , H01S5/343 , F21Y115/30
CPC分类号： H01S5/4043 , F21V9/30 , F21Y2115/30 , H01S5/005 , H01S5/1071 , H01S5/1075 , H01S5/2031 , H01S5/34333 , H01S5/4018 , H01S5/4056
摘要： The present invention proposes a semiconductor light-emitting device having an axis of symmetry, the device including two or more laser diodes, each of the laser diodes has an axis of symmetry, wherein the laser diodes are arranged in series on the axis of symmetry of the light-emitting device in such a way that their axes of symmetry coincide, wherein faces of the laser diodes are connected so that they are in electric and mechanic contact and form a bar of the laser diodes, a directional pattern of radiation thereof has an axis of symmetry coinciding with the axis of symmetry of the light-emitting device. The proposed light-emitting device can be used in laser lamps of white light for exciting phosphors since it provides a high degree of flare of cylindrical surfaces.

10. 发明授权

US10828727B2 Method of separating surface layer of semiconductor crystal using a laser beam perpendicular to the separating plane 有权
公开(公告)号：US10828727B2
公开(公告)日：2020-11-10
申请号：US13990359
申请日：2011-11-29
申请人： Yury Georgievich Shreter , Yury Toomasovich Rebane , Aleksey Vladimirovich Mironov
发明人： Yury Georgievich Shreter , Yury Toomasovich Rebane , Aleksey Vladimirovich Mironov
IPC分类号： B23K26/57 , B23K26/00 , B23K26/364 , B23K26/0622 , B23K26/40 , B28D5/00 , C30B29/40 , C30B33/06 , B23K26/53 , B23K26/38 , B23K101/40 , B23K103/00 , H01L33/00
摘要： This invention provides two variations of methods of separating a surface layer of the semiconductor crystal. In the first variation of the method, a focused laser beam is directed onto the crystal in such a way that focus is placed in the layer separation plane perpendicular to the axis of the beam, the laser beam is moved with scanning the layer separation plane with focus in the direction from the open side surface of the crystal deep into the crystal with forming a continuous slit width of which is increased with every pass of the laser beam, the previous operation is performed up to separation of the surface layer. In the second variation of the method, pulse laser emission is generated; a focused laser beam is directed onto the crystal in such a way that focus is placed in the layer separation plane perpendicular the axis of the beam, a laser beam is moved in such a way that focus is moved in the layer separation plane with forming the non-overlapping local regions with a disturbed topology of the crystal structure and with reduced interatomic bonds, wherein the local regions is distributed over the whole the plane, an external action disturbing the reduced interatomic bonds is applied to the separable layer.

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