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    • 1. 发明专利
    • Method of feeding gas to excimer laser oscillation device
    • 将气体送入激光振荡器的方法
    • JP2006108717A
    • 2006-04-20
    • JP2006006937
    • 2006-01-16
    • Canon IncJapan Air Gases LtdTadahiro Omiキヤノン株式会社ジャパン・エア・ガシズ株式会社忠弘 大見
    • OMI TADAHIROSHIRAI YASUYUKIMIZOGAMI SATOSHISANO NAOTO
    • H01S3/225
    • PROBLEM TO BE SOLVED: To provide a gas feeding system for a plurality of excimer laser oscillation devices, in which the deviation in gas pressure does not exist by each line of a plurality of main lines. SOLUTION: In a method of feeding gas to a plurality of excimer laser oscillation devices, the gas feed system comprises a plurality of main lines, each having a supply end that is connected to a gas source and a tail end that is connected to an evacuation means; and a plurality of branch lines that are branched from respective main lines and are respectively connected to the excimer laser oscillation devices, where purging is carried out at all times at a flowrate of 1 cc/min or higher, at each tail end of the main lines. In a gas feeding system for feeding fluorine gas to the oscillation devices 31, a fluorinated passivation film is provided to fluorine-gas contacting surfaces. A chromium-oxide passivation film is provided on inert-gas contacting surfaces. The supply ends and the tail ends of the plurality of main lines 111a are respectively connected to common lines 111b, 111c, wherein each of the main lines has a plurality of branch lines 21, that are respectively connected to the plurality of the oscillation devices 31. Purging is carried out at all times at a flow rate of 1 cc/min or higher at the tail ends. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种用于多个准线激光振荡装置的气体供给系统,其中多个主线的每条线不存在气压的偏差。 解决方案:在将气体供给到多个受激准分子激光振荡装置的方法中,气体供给系统包括多条主线,每条主线具有连接到气源的供给端和连接的尾端 撤离方式; 以及从各主线分支并分别连接到准分子激光振荡装置的多条分支线,其中在主体的每个尾端始终以1cc / min以上的流量一直进行清洗 线。 在向振荡装置31供给氟气的供气系统中,在氟气接触面上设置氟化钝化膜。 在惰性气体接触表面上提供氧化铬钝化膜。 供给端和多条主线111a的尾端分别连接到公共线路111b,111c,其中每条主线路具有分别连接到多个振荡装置31的多个分支线路21 在尾端以1cc / min或更高的流速始终进行清洗。 版权所有(C)2006,JPO&NCIPI
    • 5. 发明专利
    • Welding method and welding system
    • 焊接方法和焊接系统
    • JP2005152955A
    • 2005-06-16
    • JP2003395982
    • 2003-11-26
    • Japan Air Gases LtdTadahiro Omiジャパン・エア・ガシズ株式会社忠弘 大見
    • OMI TADAHIROSHIRAI YASUYUKIKISHIDA YOSHIHARUNAKANO YUSUKEMIYOSHI SHINJINAKAMURA MASAKAZU
    • B23K9/23B23K9/00B23K9/028B23K31/00B23K37/06B23K101/06B23K103/04
    • PROBLEM TO BE SOLVED: To provide a welding method and welding system by which film qualities of a weld zone and heat affected zone where the corrosion is most likely to occur can be improved, the deterioration due to the corrosion of supply piping and the metal contamination of supply gas can be reduced, and a Cr
      2 O
      3 passivation film is excellent in non-catalyst property, so that a highly decomposable gas such as hydride can stably be supplied without being decomposed.
      SOLUTION: In the method, welding is performed by using gaseous argon as a back shielding gas in a welding process and the 100% Cr
      2 O
      3 passivation film is formed again by switching the gaseous argon to gaseous argon containing about several 10 ppm oxygen in a heat treatment process, following which the back shielding gas is switched to the gaseous argon and the annealing treatment is performed.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种焊接方法和焊接系统,通过该焊接方法和焊接系统,可以改善最可能发生腐蚀的焊接区域和热影响区域的膜质量,由于供应管道和 可以减少供给气体的金属污染,并且Cr 2 SB 3 O 3 SB 3钝化膜的非催化剂性能优异,因此高分解性气体如氢化物可以 稳定地供给而不分解。 解决方案:在该方法中,通过在焊接工艺中使用气态氩作为背部保护气体进行焊接,并且100%Cr O 3 SB 3钝化膜是 通过在热处理过程中将气态氩转换成含有约10ppm氧气的气态氩再次形成,随后将后保护气体切换到气态氩并进行退火处理。 版权所有(C)2005,JPO&NCIPI
    • 8. 发明专利
    • Apparatus and method for oscillating excimer laser, aligner, and laser tube
    • 振动激光器,对准器和激光管的装置和方法
    • JP2007295003A
    • 2007-11-08
    • JP2007191428
    • 2007-07-23
    • Canon IncTadahiro Omiキヤノン株式会社忠弘 大見
    • OMI TADAHIROTANAKA NOBUYOSHIHIRAYAMA MASAKI
    • H01S3/0971H01S3/03
    • PROBLEM TO BE SOLVED: To provide an apparatus for oscillating excimer laser which can reduce the load on the lens material and its surface, can simplify the mirror or laser scanning control system, and is satisfactorily used in mass production since the service life of an excimer laser can be sufficiently prolonged, to provide an method for oscillating the excimer laser, and to provide an aligner. SOLUTION: The apparatus for oscillating excimer laser has a laser chamber 20 composed of laser pipe 2 that stores a laser gas containing a gas mixture of at least one inert gas selected from Kr, Ar, and Ne, and F 2 gas, and an optical resonator including a pair of reflection mirrors 5 and 6 that are arranged to sandwich the laser chamber 20 therebetween, wherein: an inner surface of the laser chamber 20 for storing the laser gas has a reflection-free surface with respect to light of a desired wavelength of 248 nm, 193 nm, or 157 nm; the uppermost surface of the inner surface consists of a fluoride; and a microwave introduction means (waveguide 1) is arranged for exciting the laser gas in the laser chamber 20. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:为了提供一种可以减小透镜材料及其表面上的负载的振荡准分子激光器的装置,可以简化镜面或激光扫描控制系统,并且在使用寿命之后的批量生产中令人满意地使用 可以充分延长准分子激光器,以提供振荡准分子激光器的方法,并提供对准器。 解决方案:用于振荡准分子激光器的装置具有由激光管2构成的激光室20,激光管20存储含有选自Kr,Ar和Ne的至少一种惰性气体的气体混合物的激光气体,F 以及包括一对反射镜5和6的光学谐振器,它们被布置成将激光室20夹在其间,其中:用于存储激光气体的激光室20的内表面具有反射 - 相对于248nm,193nm或157nm的所需波长的光的自由表面; 内表面的最上表面由氟化物组成; 微波引入装置(波导1)被布置用于激发激光室20中的激光气体。(C)版权所有(C)2008,JPO&INPIT
    • 9. 发明专利
    • METHOD OF CONTROLLING pH VALUE OF SOLUTION AND OXIDATION-REDUCTION POTENTIAL, AND APPARATUS
    • 控制溶液pH值和氧化还原电位的方法及装置
    • JP2010135810A
    • 2010-06-17
    • JP2010002909
    • 2010-01-08
    • Tadahiro OmiPre-Tech At:Kk忠弘 大見株式会社プレテックAt
    • YOKOI IKUNORIII TOSHIHIROOMI TADAHIRONITTA TAKEHISA
    • H01L21/304B01F3/04B08B3/08C02F1/66C02F1/68
    • PROBLEM TO BE SOLVED: To provide a method of controlling a pH value and an oxidation-reduction potential of cleaning water and an apparatus, which are easily and accurately capable of controlling the pH value and oxidation-reduction potential (ORP) of the cleaning water by adding an adequate amount of gas component to the cleaning water via a gas pervious film for adding gas, in order to obtain a high cleaning effect of the cleaning water used for wet cleaning in the process of manufacturing a semiconductor base, a liquid crystal base, a magnetic base, or a superconductor base.
      SOLUTION: The pH value and oxidation-reduction potential of the cleaning water are controlled by adding the gas component to the cleaning water via the gas pervious film for adding gas. Hydrogenation water is used as cleaning water for wet cleaning in the process of manufacturing the semiconductor base, liquid crystal base, magnetic base, or superconductor base, and ammonia gas is used as a gas component to be added to the hydrogenation water.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种控制清洗水的pH值和氧化还原电位的方法以及容易且准确地控制pH值和氧化还原电位(ORP)的装置, 通过经由用于添加气体的气体透过膜向清洗水中添加适量的气体成分,以在半导体基体的制造工序中获得清洗水的清洗效果高的清洗水, 液晶基座,磁性基座或超导体基座。 解决方案:通过将气体成分加入清洁水中,通过气体透过膜加入气体来控制清洗水的pH值和氧化还原电位。 在制造半导体基底,液晶基底,磁性基底或超导体基底的过程中,使用氢化水作为清洗水,氨气用作加入氢气中的气体成分。 版权所有(C)2010,JPO&INPIT
    • 10. 发明专利
    • Pressure type flow control device
    • 压力式流量控制装置
    • JP2009116904A
    • 2009-05-28
    • JP2009025342
    • 2009-02-05
    • Fujikin IncTadahiro OmiTokyo Electron Ltd忠弘 大見東京エレクトロン株式会社株式会社フジキン
    • OMI TADAHIRONISHINO KOJIMATSUMOTO ATSUSHIDOI RYOSUKEIKEDA SHINICHISUGIYAMA KAZUHIKO
    • G05D7/06G01F1/00G01F1/50G05D16/20
    • PROBLEM TO BE SOLVED: To provide a pressure type flow control device capable of controlling the amount of flow that passes through an orifice with a high degree of precision, by simultaneously measuring fluid pressure and fluid temperature at the same point in a fluid under noncritical expansion conditions.
      SOLUTION: The pressure type flow control device includes: an orifice 4 for controlling the amount of flow; a control valve 22 disposed at the pipework on the upstream side of the orifice 4; an upstream-side pressure sensor 10 disposed between the orifice 4 and the control valve 22 for detecting an upstream side pressure P
      1; and a downstream-side pressure sensor 12 disposed at the pipework on the downstream side of the orifice 4 for detecting a downstream-side pressure P
      2 . The amount of flow that passes through the orifice is controlled by the opening and closing of the control valve, while the amount of flow that passes through the orifice is calculated from the upstream-side pressure P
      1 and the downstream-side pressure P
      2 by the flow expression Qc=KP
      2
      m (P
      1 -P
      2 )
      n . The upstream-side pressure sensor 10 or the downstream-side pressure sensor 12 is constituted of a resistance element of which electrical resistance changes, when pressure is applied; and this resistance element as a pressure sensor is used simultaneously as a temperature sensor.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种压力式流量控制装置,其能够通过同时测量流体中的相同点处的流体压力和流体温度来以高精度控制流过孔的流量 在非临界膨胀条件下。 解决方案:压力式流量控制装置包括:用于控制流量的孔口4; 设置在孔口4的上游侧的管路处的控制阀22; 设置在孔4和控制阀22之间的上游侧压力传感器10,用于检测设置在下游侧的管道上的上游侧压力P 1; 和下游侧压力传感器12 用于检测下游侧压力P 2 的孔口4。 通过控制阀的打开和关闭来控制通过孔口的流量,而从上游侧压力P 1 计算通过孔口的流量, 下游侧压力P 2 通过流动表达式Qc = KP 2 P 2 n 。 上游侧压力传感器10或下游侧压力传感器12由施加压力时电阻变化的电阻元件构成; 并且作为压力传感器的该电阻元件同时用作温度传感器。 版权所有(C)2009,JPO&INPIT