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    • 4. 发明专利
    • Method of feeding gas to excimer laser oscillation device
    • 将气体送入激光振荡器的方法
    • JP2006108717A
    • 2006-04-20
    • JP2006006937
    • 2006-01-16
    • Canon IncJapan Air Gases LtdTadahiro Omiキヤノン株式会社ジャパン・エア・ガシズ株式会社忠弘 大見
    • OMI TADAHIROSHIRAI YASUYUKIMIZOGAMI SATOSHISANO NAOTO
    • H01S3/225
    • PROBLEM TO BE SOLVED: To provide a gas feeding system for a plurality of excimer laser oscillation devices, in which the deviation in gas pressure does not exist by each line of a plurality of main lines. SOLUTION: In a method of feeding gas to a plurality of excimer laser oscillation devices, the gas feed system comprises a plurality of main lines, each having a supply end that is connected to a gas source and a tail end that is connected to an evacuation means; and a plurality of branch lines that are branched from respective main lines and are respectively connected to the excimer laser oscillation devices, where purging is carried out at all times at a flowrate of 1 cc/min or higher, at each tail end of the main lines. In a gas feeding system for feeding fluorine gas to the oscillation devices 31, a fluorinated passivation film is provided to fluorine-gas contacting surfaces. A chromium-oxide passivation film is provided on inert-gas contacting surfaces. The supply ends and the tail ends of the plurality of main lines 111a are respectively connected to common lines 111b, 111c, wherein each of the main lines has a plurality of branch lines 21, that are respectively connected to the plurality of the oscillation devices 31. Purging is carried out at all times at a flow rate of 1 cc/min or higher at the tail ends. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种用于多个准线激光振荡装置的气体供给系统,其中多个主线的每条线不存在气压的偏差。 解决方案:在将气体供给到多个受激准分子激光振荡装置的方法中,气体供给系统包括多条主线,每条主线具有连接到气源的供给端和连接的尾端 撤离方式; 以及从各主线分支并分别连接到准分子激光振荡装置的多条分支线,其中在主体的每个尾端始终以1cc / min以上的流量一直进行清洗 线。 在向振荡装置31供给氟气的供气系统中,在氟气接触面上设置氟化钝化膜。 在惰性气体接触表面上提供氧化铬钝化膜。 供给端和多条主线111a的尾端分别连接到公共线路111b,111c,其中每条主线路具有分别连接到多个振荡装置31的多个分支线路21 在尾端以1cc / min或更高的流速始终进行清洗。 版权所有(C)2006,JPO&NCIPI
    • 5. 发明专利
    • Welding method and welding system
    • 焊接方法和焊接系统
    • JP2005152955A
    • 2005-06-16
    • JP2003395982
    • 2003-11-26
    • Japan Air Gases LtdTadahiro Omiジャパン・エア・ガシズ株式会社忠弘 大見
    • OMI TADAHIROSHIRAI YASUYUKIKISHIDA YOSHIHARUNAKANO YUSUKEMIYOSHI SHINJINAKAMURA MASAKAZU
    • B23K9/23B23K9/00B23K9/028B23K31/00B23K37/06B23K101/06B23K103/04
    • PROBLEM TO BE SOLVED: To provide a welding method and welding system by which film qualities of a weld zone and heat affected zone where the corrosion is most likely to occur can be improved, the deterioration due to the corrosion of supply piping and the metal contamination of supply gas can be reduced, and a Cr
      2 O
      3 passivation film is excellent in non-catalyst property, so that a highly decomposable gas such as hydride can stably be supplied without being decomposed.
      SOLUTION: In the method, welding is performed by using gaseous argon as a back shielding gas in a welding process and the 100% Cr
      2 O
      3 passivation film is formed again by switching the gaseous argon to gaseous argon containing about several 10 ppm oxygen in a heat treatment process, following which the back shielding gas is switched to the gaseous argon and the annealing treatment is performed.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种焊接方法和焊接系统,通过该焊接方法和焊接系统,可以改善最可能发生腐蚀的焊接区域和热影响区域的膜质量,由于供应管道和 可以减少供给气体的金属污染,并且Cr 2 SB 3 O 3 SB 3钝化膜的非催化剂性能优异,因此高分解性气体如氢化物可以 稳定地供给而不分解。 解决方案:在该方法中,通过在焊接工艺中使用气态氩作为背部保护气体进行焊接,并且100%Cr O 3 SB 3钝化膜是 通过在热处理过程中将气态氩转换成含有约10ppm氧气的气态氩再次形成,随后将后保护气体切换到气态氩并进行退火处理。 版权所有(C)2005,JPO&NCIPI
    • 9. 发明专利
    • Power feeding method for production facility
    • 电力供电方法
    • JP2005039897A
    • 2005-02-10
    • JP2003197729
    • 2003-07-16
    • Hitachi Plant Eng & Constr Co LtdTadahiro Omi忠弘 大見日立プラント建設株式会社
    • OMI TADAHIROSHIRAI YASUYUKIFUKUDA MUNEHARUOSAWA TAKAONAMIKAWA TOMONOBUYUKITA KOJISAITO KENJI
    • H02J3/00
    • Y02P80/11
    • PROBLEM TO BE SOLVED: To reduce a facility cost, the footprint for installation, a load loss/non-load loss at a transformer, and electromagnetic waves that leak from a feeder cable. SOLUTION: The method comprises a special high transformer 36 which steps down a special high voltage power received from a power grid to an intermediate voltage of 500-1,000V, a first feeding system 42 which directly feeds power of the intermediate voltage to a first-group electric equipments 50A, 50B, and 50C, and a second feeding system 44 which steps down the power of the intermediate voltage to a wanted voltage and then supplies it to a second group electric equipment 54. The first-group electric equipments 50A, 50B, and 50C are equipped with power converters 52A, 52B, and 52C which convert the supplied power of intermediate voltage to a power used by the electric equipments. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:降低设备成本,安装占地面积,变压器的负载损耗/非负载损耗以及从馈线电缆泄漏的电磁波。 解决方案:该方法包括一个特殊的高压变压器36,其将从电网接收的特殊高压电力降低到500-1,000V的中间电压;第一馈电系统42,其将中间电压的功率直接馈送到 第一组电气设备50A,50B和50C,以及第二馈电系统44,其将中间电压的功率降低到所需电压,然后将其提供给第二组电气设备54.第一组电气设备 50A,50B和50C配备有电力转换器52A,52B和52C,其将所提供的中间电压的电力转换为由电气设备使用的电力。 版权所有(C)2005,JPO&NCIPI
    • 10. 发明专利
    • METHOD OF CONTROLLING pH VALUE OF SOLUTION AND OXIDATION-REDUCTION POTENTIAL, AND APPARATUS
    • 控制溶液pH值和氧化还原电位的方法及装置
    • JP2010135810A
    • 2010-06-17
    • JP2010002909
    • 2010-01-08
    • Tadahiro OmiPre-Tech At:Kk忠弘 大見株式会社プレテックAt
    • YOKOI IKUNORIII TOSHIHIROOMI TADAHIRONITTA TAKEHISA
    • H01L21/304B01F3/04B08B3/08C02F1/66C02F1/68
    • PROBLEM TO BE SOLVED: To provide a method of controlling a pH value and an oxidation-reduction potential of cleaning water and an apparatus, which are easily and accurately capable of controlling the pH value and oxidation-reduction potential (ORP) of the cleaning water by adding an adequate amount of gas component to the cleaning water via a gas pervious film for adding gas, in order to obtain a high cleaning effect of the cleaning water used for wet cleaning in the process of manufacturing a semiconductor base, a liquid crystal base, a magnetic base, or a superconductor base.
      SOLUTION: The pH value and oxidation-reduction potential of the cleaning water are controlled by adding the gas component to the cleaning water via the gas pervious film for adding gas. Hydrogenation water is used as cleaning water for wet cleaning in the process of manufacturing the semiconductor base, liquid crystal base, magnetic base, or superconductor base, and ammonia gas is used as a gas component to be added to the hydrogenation water.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种控制清洗水的pH值和氧化还原电位的方法以及容易且准确地控制pH值和氧化还原电位(ORP)的装置, 通过经由用于添加气体的气体透过膜向清洗水中添加适量的气体成分,以在半导体基体的制造工序中获得清洗水的清洗效果高的清洗水, 液晶基座,磁性基座或超导体基座。 解决方案:通过将气体成分加入清洁水中,通过气体透过膜加入气体来控制清洗水的pH值和氧化还原电位。 在制造半导体基底,液晶基底,磁性基底或超导体基底的过程中,使用氢化水作为清洗水,氨气用作加入氢气中的气体成分。 版权所有(C)2010,JPO&INPIT